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http://dx.doi.org/10.4191/KCERS.2003.40.2.167

Effects of Synthetic Temperature and Suspension Stability of CeO2 Abrasive on CMP Characteristics  

임건자 (한국과학기술연구원 나노재료연구센터)
김태은 (한국과학기술연구원 나노재료연구센터)
이종호 (한국과학기술연구원 나노재료연구센터)
김주선 (한국과학기술연구원 나노재료연구센터)
이해원 (한국과학기술연구원 나노재료연구센터)
현상훈 (연세대학교 세리믹공학과)
Publication Information
Abstract
CMP(Chemical Mechanical Planarization) slurry for STI process is made by mechanically synthesized$CeO_2$as abrasive. The abrasive can be stabilized by electrostatic or steric stabilization in aqueous slurry and steric stabilization is more effective for long-term stability. Blanket-type$SiO_2$and $Si_3N_4$ wafers are polished with CMP slurry containing$CeO_2$synthesized in 50$0^{\circ}C$ or $700^{\circ}C$. Removal rate and surface uniformity of$SiO_2$and$Si_3N_4$wafer and selectivity are influenced by synthetic condition of abrasive, suspension stability and pH of slurries.
Keywords
$CeO_2$Chemical mechanical planariration; Synthetic temperature; Suspension stability; pH;
Citations & Related Records
Times Cited By KSCI : 2  (Citation Analysis)
연도 인용수 순위
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