• Journal of the Korean Crystal Growth and Crystal Technology
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• v.29 no.2
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• pp.45-49
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• 2019

Relatively fine silicon carbide (SiC) crystalline aggregates have been synthesized with the carbonized rice husks, paper sludge, coffee grounds as the carbon sources and the silica powder. The main reaction source to obtain silicon carbide (SiC) aggregates from the mixture of carbon sources and silica was inferred as the gaseous silicon monoxide (SiO) phase, being created from this mixture through the carbothermal reduction reaction. The silicon carbide (SiC) crystalline aggregates, fabricated from the carbonized rice husks and paper sludge, coffee grounds and silica ($SiO_2$) powder, were investigated by XRD patterns, FE-SEM and FE-TEM images. In these specimens, obtained from the carbonized rice husks, paper sludge and silica, XRD patterns showed rather high strong peak of (111) plane near $35^{\circ}$. The FE-TEM images and patterns of specimens, synthesized from carbonized rice husks, paper sludge, coffee grounds and silica under Ar atmosphere, showed relatively fine particles under $1{\mu}m$ and crystalline peak (110) of silicon carbide (SiC) diffraction pattern.

• Journal of the Korean Ceramic Society
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• v.50 no.2
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• pp.122-126
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• 2013

The surface roughness of the inner and outer surfaces of a tube is an important requirement for nuclear fuel cladding. When an inner SiC clad tube, which is considered as an advanced Pressurized Water Cooled Reactor (PWR) clad with a three-layered structure, is fabricated by Chemical Vapor Deposition (CVD), the surface roughness of the substrate, graphite, is an important process parameter. The surface character of the graphite substrate could directly affect the roughness of the inner surface of SiC deposits, which is in contact with a substrate. To evaluate the effects of the surface roughness changes of a substrate, SiC deposits were fabricated using different types of graphite substrates prepared by the following four polishing paths and heat-treatment for purification: (1) polishing with #220 abrasive paper (PP) without heat treatment (HT), (2) polishing with #220 PP with HT, (3) #2400 PP without HT, (4) polishing with #2400 PP with HT. The average surface roughnesses (Ra) of each deposited SiC layer are 4.273, 6.599, 3.069, and $6.401{\mu}m$, respectively. In the low pressure SiC CVD process with a graphite substrate, the removal of graphite particles on the graphite surface during the purification and the temperature increasing process for CVD seemed to affect the surface roughness of SiC deposits. For the lower surface roughness of the as-deposited interlayer of SiC on the graphite substrate, the fine controlled processing with the completed removal of rough scratches and cleaning at each polishing and heat treating step was important.

• Composites Research
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• v.35 no.3
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• pp.161-174
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• 2022

SiC fiber-reinforced SiC matrix composite is a promising accident-tolerant fuel cladding material to improve the safety of light water nuclear reactors. Compared to the current zirconium alloy fuel cladding as well as metallic accident-tolerant fuel cladding, SiC composite fuel cladding has exceptional accident-tolerance such as excellent structural integrity and extremely low corrosion rate during severe accident of light water nuclear reactors, which reduces reactor core temperature and delays core degradation processes. In this paper, we introduce the concept, technical issues, and properties of SiC composite accident-tolerant fuel cladding during operation and accident scenarios of light water nuclear reactors.

• Journal of the Korean Vacuum Society
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• v.12 no.2
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• pp.130-135
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• 2003

Polycrystalline silicon thin films have been used for low cost thin film device application. However, it was very difficult to fabricate high performance poly-Si at a temperature lower than $600^{\circ}C$ for glass substrate because the crystallization process technologies like conventional solid phase crystallization (SPC) require the number of high temperature (600-$1000^{\circ}C$) process. The objective of this paper is to grow poly-Si on flexible substrate using a rapid thermal crystallization (RTC) of amorphous silicon (a-Si) layer and make the high temperature process possible on molybdenum substrate. For the high temperature poly-Si growth, we deposited the a-Si film on the molybdenum sheet having a thickness of 150 $\mu\textrm{m}$ as flexible and low cost substrate. For crystallization, the heat treatment was performed in a RTA system. The experimental results show the grain size larger than 0.5 $\mu\textrm{m}$ and conductivity of $10^{-5}$ S/cm. The a-Si was crystallized at $1050^{\circ}C$ within 3min and improved crystal volume fraction of 92 % by RTA. We have successfully achieved a field effect mobility over 67 $\textrm{cm}^2$/Vs.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.352-352
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• 2010

Silicon Carbide (SiC) power device possesses attractive features, such as high breakdown voltage, high-speed switching capability, and high temperature operation. In general, device design has a significant effect on the switching characteristics. In this paper, we report the effect of the P-base doping concentration ($N_{PBASE}$) on the transient characteristics of 4H-SiC DMOSFETs. By reducing $N_{PBASE}$, switching time also decreases, primarily due to the lowered channel resistance. It is found that improvement of switching speed in 4H-SiC DMOSFETs is essential to reduce the and channel resistance. Therefore, accurate modeling of the operating conditions are essential for the optimization of superior switching performance.

• Proceedings of the IEEK Conference
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• 2001.06b
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• pp.5-8
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• 2001

This paper describes the development of SiC MOSFET model for high temperature applications. The temperature dependence of the threshold voltage and mobility of SiC MOSFET is quite different from that of silicon MOSFET. We developed the empirical temperature model of threshold voltage and mobility of SiC MOSFET and implemented into HSPICE. Using this model the MOSFET Id-Vds characteristics as a function of temperature are simillated. Also the SiC CMOS operational amplifieris designed using this model and the temperature dependence of the frequency response, transfer characteristics and slew rate as a function of temperature are analyzed.

• Journal of Ocean Engineering and Technology
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• v.10 no.4
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• pp.84-91
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• 1996

A fractal analysis on fracture surface of aluminium-particulate SiC composites was attempted. As the volume fraction of SiC in composites increases, the fractal dimension tends to increase. However, no correlation between the fractal dimension and the fracture toughness in terms of critical energy release rate was observed. Since the fractal dimension represents the roughness of fracture surface, the fracture toughness would be a function of not only fracture surface roughness but also additional parameters. Thus the applicability of fractal analysis to the estimation of fracture toughness must depend on the proper choice and interpretation of additioal paramerters. In this paper, the size of characteristic strctural unit for fracture was considered as an additional parameter. As a result, the size appeared to be a function of only volume fraction of SiC. Finally, a master curve for fracture toughness of aluminium-particulate SiC composites was proposed as a function of fractal dimension and volume fraction of SiC.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.238-242
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• 2001

In this paper, the current-voltage characteristics of a 4H-SiC MESFET is simulated by using the Atlas Simulation tool. we are able to use the simulator to extract more information about the new material 4H-SiC, including the mobility, velocity-field Curve and the Schottky barrier height. We have enabled and used the new simulator to investigate breakdown Voltage and thus predict operation limitiations of 4H-SiC device. Modeling results indicate that the Breakdown Voltage is 197 V and Current is 100 mA

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.238-242
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• 2001

In this paper, the current-voltage characteristics of a 4H-SiC MESFET is simulated by using the Atlas Simulation tool. we are able to use the simulator to extract more information about the new material 4H-SiC, including the mobility, velocity-field Curve and the Schottky barrier height. We have enabled and used the new simulator to investigate breakdown Voltage and thus predict operation limitations of 4H-SiC device. Modeling results indicate that the Breakdown Voltage is 197 V and Current is 100 mA

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.285-285
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• 2007

Friction material in a piezoelectric system is a important part to affect to moving performance. In this paper, alumina ceramics $(AlO_2)$, silicon carbide (SiC), high speed steel and super-hard alloy (WC, Tungsten Carbide) having a hardness knoop of 1000 to 2000 $kg/mm^2$ were tested as a friction material of AF module. Even though $AlO_2$, SiC and high speed steel were a high-hardness material, $AlO_2$ and SiC were worn by a rough surface, and SiC is rusted in humidity condition. AF module using super-hard alloy has showed a stable moving performance in life time test.