• Korean Journal of Materials Research
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• v.4 no.2
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• pp.136-142
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• 1994

Epitaxial TiSiz films have been grown by UHV deposition of Ti on atomically clean Si(ll1)- orientated substrates. The Ti film of 50$\AA$ was deposited on the reconstructed Si(ll1) surface at room temperature. The sample was annealed up to $800^{\circ}C$ in $100^{\circ}C$ increments. The structure of the TiSiL films have been identified as the C49 metastable phase by electron diffraction patterns. Scanning electron microscopy( SEM) shows three different types of Tiksilicide island morphologies. The individual island structures are single crystal and are considered to be epitaxy with different crystallographic orientations. The orientational relationships of the $TiSi_{2}$ islands is given by [ 172 1 C49 $TiSi_{2}$//[110] Si and (021) C49 $TiSi_{2}$// (111)Si.

• Journal of the Korean Ceramic Society
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• v.54 no.4
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• pp.340-348
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• 2017

$SiC_f/SiC$ composites were joined using a $60{\mu}m-thick$ $Ti_3AlC_2$ or $Ti_3SiC_2$ MAX phase tape. The filler tape was inserted between the $SiC_f/SiC$ composites containing a 12 wt.% $Al_2O_3-Y_2O_3$ sintering additive. The joining was performed to a butt-joint configuration at $1600^{\circ}C$ or $1750^{\circ}C$ in an Ar atmosphere by applying 3.5 MPa using a hot press. Microstructural and phase analyses at the joining interface confirmed the decomposition of $Ti_3AlC_2$ and $Ti_3SiC_2$, indicating the joining by solid-state diffusion. The results showed sound joining interface without the presence of cracks. Joining strengths higher than 150 MPa could be obtained for the joints using $Ti_3AlC_2$ or $Ti_3SiC_2$ at $1750^{\circ}C$, while those for joined at $1600^{\circ}C$ decreased to 100 MPa approximately without the deformation of the joining bodies. The thickness of initial filler tape was reduced significantly after joining because of the decomposition and migration of MAX phase owing to the plasticity at high temperatures.

• Journal of Korea Foundry Society
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• v.17 no.2
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• pp.180-187
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• 1997

The influence of solidification condition on the segregation of SiC particles in the $Al-xSi/6wt%SiC_p$(x: 6, 10, 14, 18${\cdot}$wt%) composites was investigated in the study. The results are as follows: 1) During the counter-gravity unidirectional solidification of $Al-Si/SiC_p$ composites melt, most of the SiC particles are pushed to the top of the casting. 2) The SiC particles pushing in the $Al-Si/SiC_p$ composite melts are not observed, when the interface velocity of melts increases more than 1.41 ${\mu}m/sec$. 3) The SiC particles are entrapped in the interdendrite regions, when the sizes of SiC particles in the $Al-Si/SiC_p$ composites are large than ${\varphi}22{\mu}m$.

• Korean Journal of Materials Research
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• v.7 no.11
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• pp.964-968
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• 1997

Si(001)기판 위에 형성시킨 Zr-silicide의 전기적, 물리적 특성에 관한 연구를 하였다. Zr 박막은 전자빔 증착기를 사용하여 증착하였으며, 50$0^{\circ}C$ 열처리하여 Zr-silicide를 형성시켰다. 각 온도에서 열처리된 Zr-silicide시편의 상형성, 전기적 특성, 화학적 조성, 표면 및 계면 형상을 XRD, four-point probe, AES, TEM과 HRTEM으로 분석하였다. 분석 결과 $600^{\circ}C$부터 Zr과 Si기판의 계면에서 C49 ZrSi$_{2}$의 생성이 관찰되었다. Zr-Silicide박막의 비저항은 C49 ZrSi$_{2}$의 형성에 영향을 받는 것으로 관찰되었으며, 50$0^{\circ}C$ 열처리 후에는 184.3 $\mu$Ω-cm로 낮아졌으며, C49 ZrSi$_{2}$가 박막에 완전히 형성된 80$0^{\circ}C$ 열처리 후에는 32$\mu$Ω-cm의 낮은 저항을 나타내었다. 형성된 C49 ZrSi$_{2}$박막은 균질한 화학적 조성을 하고 있음을 AES 분석으로 확인하였다. Zr-silicide의 표면 및 계면의 형상을 TEM과 HRTEM으로 관찰하였으며, $600^{\circ}C$ 열처리 후에 계면에서 ZrSi$_{2}$의 상형성이 시작되는 것을 관찰하였다. 80$0^{\circ}C$ 열처리 후에도 계면과 표면형상은 비교적 균질한 형상이 유지되었음이 관찰되었으며, 이는 C49 ZrSi$_{2}$가 높은 온도에서도 잘 응집되지 않으며 고온 안정성을 가지는 재료임이 관찰되었다.

• Journal of the Korean Ceramic Society
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• v.29 no.9
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• pp.750-756
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• 1992

Reaction bonded si-SiC composites were prepared by silicon infiltration technique at temperature of 1$600^{\circ}C$ for 30 minutes in vaccum atmosphere. The microstructure and mechanical properties of Si-SiC composites were investigated and characterized. UF-15 and SE-10 as SiC powders, phenolic resin and carbon black as carbon source, and metallic silicon powder as molten Si source were used as starting materials. New SiC crystallines nucleatd and grown by reaction of Si and C were detected by TEM and SEM-EDS. The bonding between new and original SiC was found to be strong. But the wetting of SiC by unreacted metallic Si and the rapid grain growth of new SiC decreased density and fracture toughness. Fracture toughness and modulus of rupture of Si-SiC composite were about 3.2 MPa.m1/2 and 480 MPa, respectively.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.5 no.2
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• pp.109-121
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• 1995

Reaction coulples of SiC with cobalt were annealed in an Ar/4 vol% $H_2$ atmosphere at temperatures between $950^{\circ}C$ and $1250^{\circ}C$for various times between 4 and 100 h. At temperatures above $950^{\circ}C$, solid state reactions lead to the formation of various silicides with carbon precipitates. The typical reaction layer sequence was $SiC/CoSi + C/CozSi + C/CozSi/CozSi + C/{\cdot\cdot\}/CO_2Si/CO$ in the reaction zone. The mechanism of the periodic band structure formation with the carbon precipitation behaviour was examined and discussed in terms of reaction kinetics and thermodynamic considerations. The growth of the reaction zone has a square root of time dependence. The reaction kinetics is proposed to estimate the effective reaction constant from the parabolic gowth of the reaction zone. The mechanical properties of the reaction zones were determined by the microhardness test.

• Journal of the Korean Ceramic Society
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• v.48 no.5
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• pp.335-341
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• 2011

Continuous SiC fiber-reinforced SiC-matrix composites ($SiC_f$/SiC) had been fabricated by electrophoretic infiltration combined with ultrasonication. Nano-sized ${\beta}$-SiC added with 12 wt% of $Al_2O_3-Y_2O_3$ additive and Tyranno$^{TM}$-SA3 fabric were used as a matrix phase and fiber reinforcement, respectively. After hot pressing at 5 different conditions, the density, microstructure and mechanical properties of $SiC_f$/SiC were characterized. Hot pressing at relatively severe conditions, such as $1750^{\circ}C$ for 1 and 2 h, resulted in a brittle fracture behavior due to the strong fiber-matrix interface in spite of their high flexural strength. On the other hand, toughened $SiC_f$/SiC composite could be achieved by hot pressing at milder condition because of the formation of weak interface in spite of the decreased flexural strength. These results proposed the importance of weak fiber-matrix interface in the fabrication of ductile $SiC_f$/SiC composite.

• Korean Journal of Materials Research
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• v.15 no.3
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• pp.177-182
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• 2005

Large amounts of the waste SiC sludge containing small amounts of Si and organic lubricant were produced during the wire cutting process of the single silicon crystal ingots. The waste SiC sludge was purified by the washing process and the purified SiC powders were used to fabricate continuously porous $SiC-Si_3N_4$ composites using a fibrous monolithic process, in which carbon, $6wt\%\;Y_2O_3-2\;wt\%\;A1_2O_3$ and ethylene vinyl acetate were added as a pore-forming agent, sintering additives, and binder, respectively. In the burning-out process, carbon was fully removed and continuously porous $SiC-Si_3N_4$ composites were successfully fabricated. The green bodies containing SiC, Si particles and sintering additives were nitrided at $1410^{\circ}C$ in a flowing $N_2+10\%\;H_2$ gas mixture. Continuously porous composites were combined with SiC, ${\alpha}Si_3N_4,\;\beta-Si_3N_4$ and a few $\%$ of Fe phases. The pore size of the 2nd and the 3rd passed $SiC-Si_3N_4$ composites was $260\;{\mu}m$ and $35\;{\mu}m$ in diameter, respectively.

• Korean Journal of Materials Research
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• v.6 no.4
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• pp.428-435
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• 1996

초미립 SiC분말과 SiC platelet을 2차성으로 Si3N4에 첨가하여 SiC/Si3N4 하이브리드 복합체를 가압소결로 제조한 후 2차상의 영향을 조사한 결과핫프레스법을 이용한 경우 SiC platelet은 Si3N4 기지 복합채의 치밀화를 저해하지 않고 초미립의 SiC 첨가는 Si3N4의 입성장을 효과적으로 억제하여 미세한 $\beta$-Si3N4의 grain을 형성함을 관찰하였다. 초미립 SiC첨가를 통한 복합체의 강도 증진은 상대적으로 $\beta$-Si3N4입자의 미세화에 의한 인성의 저하를 유도하나 SiC platelet을 첨가하여 급격한 강도 저하 없이 높은 인성을 갖는 하이브리드 복합체를 제조할 수 있었으며 SiC/Si3N4 하이브리드 복합체의 인성증진은 elongated $\beta$-Si3N4와 platelet SiC의 debonding에 의한 grain pull-out 영향임을 알 수 있었다.

• The Korean Journal of Ceramics
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• v.5 no.3
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• pp.224-229
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• 1999

The preparation and toughening of SiC-AIN solid solution from powder mixtures of $\beta$-SiC, AIN and $\alpha$-SiC by hot-pressing were studied in the 1870 to $2030^{\circ}C$ temperature range. The reaction of AIN and $\beta$-SiC(3C) powders causing transformation to the 2H(wurtzite) structure appeared to depend on hot-pressing temperatures and an additive of $\alpha$-SiC. For the composition of 49wt% SiC with 2 wt% $\alpha$-SiC and 47.5 wt% AIN47.5wt% SiC with 5 wt % $\alpha$-SiC at 203$0^{\circ}C$ for 1 h, th complete solid solutions with a single phase of 2H could be obtained. The appreciable amount of $\alpha$-SiC could develop the columnar inter-grains of 4H phase and the stable 2H phase with the relatively uniform composition and grain size distributions. The effect of $\alpha$-SiC on the phases present and compositional microstructures with columnar inter-grains was invetigated using X-ray diffraction, scanning electron microscopy and transmission electron microscopy. The fracture toughness and Vickers hardness of the hot-pressed solid solutions wre examined by the indentation-fracture-test method.