• Bulletin of the Korean Chemical Society
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• 제20권10호
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• pp.1149-1152
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• 1999

1H NMR spectrum of a DMF-d7 solution containing 4-aminopyrimidine and [SiW11CoIIO39]6- (SiW11Co) shows separate peaks from two linkage isomers, a and b, in which N(1) and N(3) of the pyrimidine ring are coordinated to SiW11Co, respectively. The signal from the amine group in the isomer a exhibits temperature dependence that is characteristic of a two-site exchange problem. Rates of internal rotation of the amine group were determined by simulating the NMR spectra at 5-35℃. The amine group of free 4-aminopyrimidine also shows temperature-dependent spectra at lower temperatures; rates of internal rotation at (-25)-25℃ were determined. The internal rotation of the amine group in the complex is much slower than that for free 4-aminopyrimidine, indicating that π-character of the C-N bond increases on coordination to SiW11Co. The amine group in the isomer b does not show such behavior. It is probable that hydrogen bonding between N-H and a bridging oxygen atom of SiW11Co prevents it from rotating at low temperatures.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2000년도 하계학술대회 논문집 C
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• pp.1763-1765
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• 2000

This paper presents deposition and characterizations of microcrystalline silicon ($\mu$ c-Si:H) films prepared by hot wire chemical vapor deposition at substrate temperature at 300$^{\circ}C$. The flow rates of $SiH_4$ gas are critical parameter for the formation of Si films with microcrystalline phase. We could obtain $\mu$ c-Si:H with columnar grain structure and volume fraction of 75% without H2 dilution. The electronic properties, hydrogen bonding configurations, and $H_2$ concentration inside the films are also strongly affected by $SiH_4$ flow rate, which is provided in this paper.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2003년도 하계종합학술대회 논문집 II
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• pp.743-746
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• 2003

We have successfully used hydrophobic direct-wafer bonding, along with H-induced layer splitting of Ge, to transfer 700nm think, single-crystal Ge films to Si substrates. Optical and electrical properties have been also observed on these samples. Triple-junction solar cell structures gown on these Ge/Si heterostructure templates show comparable photoluminescence intensity and minority carrier lifetime to a control structure grown on bulk Ge. When heavily doped p$^{+}$Ge/p$^{+}$Si wafer bonded heterostructures were bonded, ohmic interfacial properties with less than 0.3Ω$\textrm{cm}^2$ specific resistance were observed indicating low loss thermal emission and tunneling processes over and through the potential barrier. Current-voltage (I-V) characteristics in p$^{+}$Ge/pSi structures show rectifying properties for room temperature bonded structures. After annealing at 40$0^{\circ}C$, the potential barrier was reduced and the barrier height no longer blocks current flow under bias. From these observations, interfacial atomic bonding structures of hydrophobically wafer bonded Ge/Si heterostructures are suggested.ested.

• Corrosion Science and Technology
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• 제4권6호
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• pp.226-230
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• 2005

Si incorporated diamond-like carbon (Si-DLC) films ranging from 0 to 2 at.% contents were deposited on STS 316L substrates for orthopedic implants by means of r.f. plasma-assisted chemical vapor deposition (r.f. PACVD) technique, using mixtures of benzene ($C_6H_6$) and silane ($SiH_4$) as the precursor gases. This study provides the reliable and quantitative data for assessment of the effect of Si incorporation on corrosion property in the simulated body fluid environment through the electrochemical test. It was found that corrosion to resistance of Si-DLC coatings with increasing Si content are improved owing to high $sp^3$ bonding.

• 한국세라믹학회지
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• 제33권10호
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• pp.1109-1116
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• 1996

• 한국세라믹학회지
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• 제33권12호
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• pp.1414-1420
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• 1996

평균 입경 8${\mu}{\textrm}{m}$ Si 분말을 사용하여 무가압 분말 충전 성형볍에 의해 Si 성형체를 제조하였다. 이 Si 성형체를 1350,140$0^{\circ}C$의 온도에서 3~35시간동안 N2/H2 분위기에서 반응 소결한 후 미세구조를 관찰하였다. 반응 소결체는 90% 이상의 질화율과 88%의 상대밀도를 보였다. 반응 소결체의 가스압 소결을 위해 소결조제로서 MgO를 Mgnitrate 수용액 형태로 Si 성형체에 5wt% 첨가한 후140$0^{\circ}C$에서 15시간동안 반응 소결하였다. 이후 반응 소결체를 1800, 1900, 200$0^{\circ}C$에서 각각 150, 300분 동안 가스압 소결을 행하여 95%의 상대밀도와 598 MPa의 꺾임강도, 6 MPa.m1/2의 파괴인성을 나타내는 질화규소 소결체를 제조하였다.

• 대한기계학회논문집A
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• 제34권7호
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• pp.929-933
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• 2010

3 차원 패키징을 위해 열가압 공정으로 제조된 Cu-Cu 접합 계면의 접합 특성을 평가하기 위해 4 점 굽힘 실험을 수행하였다. Cu가 코팅된 Si 웨이퍼 2 장을 $350^{\circ}C$에서 1 시간 동안 15kN 의 하중으로 접합시킨 후, 동일한 온도에서 1 시간동안 어닐닝을 수행하였다. 접합된 웨이퍼를 $30\;mm\;{\times}\;3\;mm$ 크기로 잘라 시험편을 준비하였다. 시험편의 중심에 깊이 $400\;{\mu}m$의 노치를 가공하였다. 시험기에 광학계를 부착하여 노치에서의 크랙 발생과 계면에서의 크랙 진전을 관찰하였다. 일정한 테스트 속도로 실험을 수행하여, 이에 상응하는 하중을 측정하였다. Cu-Cu 접합 계면 에너지는 $10.36\;J/m^2$ 으로 측정되었으며, 파괴된 계면을 분석하였다. 표면 분석 결과, $SiO_2$와 Ti의 계면에서 파괴가 일어났음을 확인하였다.

• 한국세라믹학회지
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• 제31권10호
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• pp.1231-1239
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• 1994

In this study, gel powder which had relatively high hydration reactivity in CaO and P2O5 rich composition of CaO-P2O5-SiO2-H2O system was prepared by sol-gel process and its hydrated specimen was manufactured. The it was investigated to appropriate calcination temperature in sol-gel process which hydrated specimen of gel powder have proven to strength and the effect of factors influenced strength in hydration process. The major product of before and after hydration reaction was hydroxyapatite, and crystalline phase of C-S-H was already formed during gelation process. After hydration reaction of pressed specimen, crystalline phase of C-S-P-H was formed. It was hydrated product of silicocarnotite (5CaO.P2O5.SiO2). Gel phases of C-S-H and C-S-P-H occured as a result of partial substitution of amorphous silica by P2O5 was formed. The strength of hydrated hardened body is developed by strong bonding and bridging between the gel phases of C-S-H or C-S-P-H and the crystalline products such as hydroxyapatite, Ca(OH)2 C-S-H and C-S-P-H. In addition, the ultrafine gel powder have an great effect on increase of hydration reaction.

• 한국결정성장학회지
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• 제10권1호
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• pp.1-4
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• 2000

Thin films of hydrogenated amorphous silicon carbide compounds ($a-Si_{x}C_{1-x}:H$) of different compositions were deposited on Si substrate by RF plasma-enhanced chemical vapor deposition (PECVD). Experiments were carried out using silane (SiH$_4$) and methane ($CH_4$) as the gas precursors at 1 Torr and at a low substrate temperature ($250^{\circ}C$). The gas flow rate was changed with the other parameters (pressure, temperature, RF power) fixed. The substrate was Si(100) wafer and all of the films obtained were amorphous. The bonding structure of $a-Si_{x}C_{1-x}:H$films deposited was investigated by X-ray photoelectron spectroscopy (XPS) for the film compositions. In addition, the surface morphology of films was investigated by atomic force microscopy (AFM).

• The Korean Journal of Ceramics
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• 제3권3호
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• pp.163-168
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• 1997

Most of heteroepitaxial $\beta$-SiC thin films have been successfully grown on Si(100) adapting a carburizing process, by which a few atomic layers of substrate surface is chemically converted to very thin SiC layer using hydrocarbon gas sources. Using an organo-silicon precursor, bis-trimethylsilymethane (BTMSM, [$C_7H_{20}Si_2$]), heteropitaxial $\beta$-SiC thin films were successfully grown directy on Si substrate without a carburized buffer layer. The defect density of the $\beta$-SiC thin films deposited without a carburized layer was as low as that of $\beta$-SiC films deposited on carburized buffer layer. In addition, void density was also reduced by the formation of self-buffer layer using BTMSM instead of carburized buffer layer. It seems to be mainly due to the characteristic bonding structure of BTMSM, in which Si-C was bonded alternately and tetrahedrally (SiC$_4$).