• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2012.05a
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• pp.141-142
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• 2012

Recently, surface texturing by atmospheric laser processing has been received lots of attention to improve the tribological performance of various surfaces and this laser texturing of surfaces could be considered in a large extent to improve tribological performance of PVD coated surface. Surface texturing could be performed by various manufacturing techniques such as indentation with hard materials, ion etching, abrasive jet machining, lithography, and Laser Surface Texturing (LST). Out of all these techniques, however it is generally accepted that laser surface texturing (LST) by atmospheric laser processing offers the most promising process as LST is very fast, environmentally-friendly, easy to control the shape and size of the microdimples. In this work various preliminary experimental results from the laser texturing on the PVD-coated steel substrate will be presented. Our results indicated that laser texturing definitely affect the tribological performance of the surfaces and the size as well as pattern type of laser texturing are one of the key factors. From the wear tests against an alumina counterpart ball at room temperature under oil-lubricated condition, laser surface texturing on the CrZrSiN films reduced the friction coefficients by approximately more than 5 times in the case of narrow patterned surfaces.

• Journal of the Korean institute of surface engineering
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• v.40 no.3
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• pp.138-143
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• 2007

The effects of texturing and anti-reflection coating on the reflection properties of multi-crystalline silicon solar cell have been investigated. The chemical solutions of alkaline and acidic etching solutions were used for texturing at the surface of multi-crystalline Si wafer. Experiments were performed with various temperature and time conditions in order to determine the optimized etching condition. Alkaline etching solution was found inadequate to the texturing of multi-crystalline Si due to its high reflectance of about 25%. The reflectance of Si wafer texturing with acidic etching solution showed a very low reflectance about 10%, which was attributed to the formation of homogeneous. Also, deposition of ITO anti-reflection coating reduced the reflectance of multi-crystalline si etched with acidic solution($HF+HNO_3$) to 2.6%.

• 한국신재생에너지학회:학술대회논문집
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• 2009.06a
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• pp.156-158
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• 2009

우리 연구팀은 $SiO_2$ nanospheres를 이용한 natural lithography를 통해 2가지 방법으로 GaAs 기판의 반사율을 감소시켰다. 먼저 GaAs 기판 위에 benzocyclobutene(BCB) 고분자를 코팅한 후, 그 위에 $SiO_2$ nanospheres를 코팅한다. 그리고 고분자의 유리전이 온도이상으로 가열하면 $SiO_2$ nanospheres가 고분자 속으로 가라앉게 되어 렌즈 형태의 표면이 형성된다. 또한, 이 상태에서 BOE 용액을 통해 $SiO_2$ nanospheres를 제거하여 오목한 형태의 표면을 형성할 수 있다. 이러한 2가지 방법의 surface texturing을 통해 우리는 GaAs 표면의 반사도를 각각 400~800nm의 파장에서 평균 13.6%~16.52%의 반사율을 얻을 수 있었다.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.15 no.11
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• pp.2439-2443
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• 2011

To obtain the effect of texturing process in Solar cells, the Si-wafers were textured by using the IPA+DI water mixed etching solution with KOH alkaline. All samples were analyzed by the scanning electron microscopy for the surface images, and it was researched the correlation between the efficiency of optical properties and the effect of texturing. From the results of the surface images obtained by SEM, mc-Si wafer shows a isotropic surface but sc-Si wafers displays the unisotropic surface. The reflectance was improved at the sc-Si wafer textured uniformly, and the reflectance of over etched-samples increased.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.23 no.2
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• pp.86-92
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• 2013

$SF_6/O_2$ inductively coupled plasmas were employed to texture Si surface as a pretreatment for nanocrystalline diamond film growth. It was found that the $SF_6/O_2$ plasma texturing provided a very wide process window where normalized roughness values in the range of 2~16 could be obtained. Significantly improved nucleation densities of ${\sim}6.5{\times}10^{10}cm^{-2}$ compared to conventional mechanical abrasion were achieved after seeding for the textured Si substrate.

• Journal of the Korean Electrochemical Society
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• v.14 no.4
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• pp.191-195
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• 2011

Wet chemical etching methods were utilized to conduct Si surface texturing, which could enhance photoelectrochemical hydrogen generation rate. Two different etching methods tested, which were anisotropic metal-catalyzed electroless etching and isotropic etching. The Si nano-texture that was fabricated by the anisotropic etching showed ~25% increase in photocurrent for H2 generation. The photocurrent enhancement was attributed to the reduced reflection loss at the nano-textured Si surface, which provided a layer of intermediate density between water and the Si substrate.

• Journal of the Korean Ceramic Society
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• v.46 no.6
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• pp.685-688
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• 2009

Surface Texturing is very important process for high cell efficiency in crystalline silicon solar cell. Anisotropic texturing with an alkali etchant was known not to be able to produce uniform surface morphology in multi-crystalline silicon (mc-Si), because of its different etching rate with random crystal orientation. In order to reduce surface reflectance of mc-Si wafer, the general etching tendency was studied with HF/HN$O_3$/De-ionized Water acidic solution. And the surface structures of textured mc-Si in various HF/HN$O_3$ ratios were compared. The surface morphology and reflectance of textured silicon wafers were measured by FE-SEM and UVvisible spectrophotometer, respectively. We obtained average reflectance of $16{\sim}19$% for wavelength between 400 nm and 900 nm depending on different etching conditions.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.12 no.6
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• pp.2735-2738
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• 2011

To obtain the Si solar cells, the Si-wafers were textured by using the IPA+DI water mixed solution with KOH acids during the various 1~40 minutes at the temperature with $80^{\circ}C$, respectively. The samples were analyzed by the scanning electron microscopy for the surface images and the solar simulation for I-V measurement system. It was researched the correlation between the efficiency of solar cells and the effect of texturing. From the results of the surface images obtained by SEM, the efficiency was increased at the sample textured uniformly, and the efficiency of over etched-samples decreased.

• Journal of the Korean Vacuum Society
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• v.20 no.3
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• pp.189-194
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• 2011

Si-cell was prepared with various types owing to the etching times textured by the KOH etching solution. The pn junction for solar cell was prepared on p-type Si wafer by the furnace using the $POCl_3$ and oxygen mixed precursor, and the metalization was done using by the Al back electrode and Ag front electrode. Textured Si surface was etched by the pyramid formation. The efficiency and the fill factor was increased in the Si-cell with a large size of pyramids, because of the series resistances decrease depending on the increasing of the photon absorbance. Increasing of the absorbance occurred the induction of the short current and open voltage, and then the efficiency was increased.

• Journal of the Korean Vacuum Society
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• v.20 no.3
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• pp.225-232
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• 2011

Reactive ion etching (RIE) technique for maskless surface texturing of mc-silicon solar wafers has been applied and succeed in fabricating a grass-like black-silicon with an average reflectance of $4{\pm}1%$ in a wavelength range of 300~1,200 nm. In order to investigate the optimized texturing conditions for mass production of high quantum efficiency solar cell Surface characteristics such as the spatial distribution of average reflectance, micrscopic surface morphology and minority carrier lifetime were monitored for samples from saw-damaged $15.6{\times}15.6\;cm^2$ bare wafer to key-processed wafers as well as the mc-Si solar cells. We observed that RIE textured wafers reveal lower average reflectance along from center to edges by 1% and referred the origin to the non-uniform surface structures with a depth of 2 times deeper and half-maximum width of 3 times. Samples with anti-reflection coating after forming emitter layer also revealed longer minority carrier lifetime by 40% for the edge compared to wafer center due to size effects. As results, mc-Si solar cells with RIE-textured surface also revealed higher efficiency by 2% and better external quantum efficiency by 15% for edge positions with higher height.