• 한국재료학회:학술대회논문집
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• 한국재료학회 1992년도 춘계학술발표회
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• pp.66-66
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• 1992

• 한국세라믹학회지
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• 제34권4호
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• pp.373-379
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• 1997

A study on the deposition and characterization of BaTiO3 thin films on MgO-buffered Si(100) substrates by sputtering was conducted. The MgO buffer layers were investigated as a function of deposition temperature. At lower substrate temperature, the MgO layers were not fully crystalline, but a crystallized MgO layer with (001) preferred orientation was obtained at the substrate temperature of $700^{\circ}C$. Partially (00ι) or (h00) textured BaTiO3 films were obtained on Si(100) with the MgO buffer layer grown at 700ι. While, randomly oriented BaTiO3 films with large-scale cracks on the surface were made without the MgO layer. The crystallographic orientation, morphology and electrical properties between the BaTiO3 films on Si with and without the MgO layer were compared using the BaTiO3 film on MgO(100) single crystal substrate as a reference system. Also the favorable role of the MgO layer as a buffer for growing of oriented BaTiO3 films on Si substrates was confirmed.

• 센서학회지
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• 제27권1호
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• pp.40-46
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• 2018

In this paper, we focus on optimization of a boron ($^{11}B$)-implanted n type Si epi substrate for obtaining near-zero temperature coefficient of resistance (TCR) at temperature range from 25 to $125^{\circ}C$. The $^{11}B$-implantation on the N type-Si epi substrate formed isolation from the rest of the N-type Si by the depletion region of a PN junction. The TCR increased as the temperature of rapid thermal anneal (RTA) was increased at the temperature range from $900^{\circ}C$ to $1000^{\circ}C$ for the $p^+$ contact with implantation at dose of $1E16/cm^2$, but sheet resistance of this film was decreased. After the optimization of anneal process condition, the TCR of $1126.7{\pm}30.3$ (ppm/K) was obtained for the $p^-$ resistor-COB package chips contained $p^+$ contact with the implantation of $5E14/cm^2$. This shows the potential of the $^{11}B$-implanted n type Si epi substrate as a resistor for pressure sensor in thermal stable environment applications..

• 마이크로전자및패키징학회지
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• 제7권3호
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• pp.27-29
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• 2000

Lift-off를 이용한 DLC-coated Si-tip FEA 제조에 있어서 gate 절연막의 측면에 DLC가 coating되는 것을 방지하기 위해 기판 상에 Al 희생층을 경사-회전 증착한 뒤 DLC를 coating하고, 다음으로 희생층을 식각하여 tip 이외의 DLC를 제거하는 방법을 제안하였다. 이러한 Al희생층을 이용한 lift-off공정에 의해 제조된 DLC-coated Si-tip FEA의 전류전압 특성과 전류 표동 특성을 조사하였으며, gate 누설 전류의 감소와 방출 전류의 안정성을 확인하였다.

• 한국결정성장학회지
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• 제10권1호
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• pp.1-4
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• 2000

Thin films of hydrogenated amorphous silicon carbide compounds ($a-Si_{x}C_{1-x}:H$) of different compositions were deposited on Si substrate by RF plasma-enhanced chemical vapor deposition (PECVD). Experiments were carried out using silane (SiH$_4$) and methane ($CH_4$) as the gas precursors at 1 Torr and at a low substrate temperature ($250^{\circ}C$). The gas flow rate was changed with the other parameters (pressure, temperature, RF power) fixed. The substrate was Si(100) wafer and all of the films obtained were amorphous. The bonding structure of $a-Si_{x}C_{1-x}:H$films deposited was investigated by X-ray photoelectron spectroscopy (XPS) for the film compositions. In addition, the surface morphology of films was investigated by atomic force microscopy (AFM).

• 한국정보통신학회:학술대회논문집
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• 한국해양정보통신학회 2004년도 춘계종합학술대회
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• pp.658-660
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• 2004

본 논문에서는 DG MOSFET의 main gate와 side gate사이의 산화층 두께, 그리고 main gate와 Si 기판 사이의 산화층 두께를 변화시킴으로써 전기적 특성을 조사하였다. Main gate와 side gate사이의 간화층 두께가 4nm이고 main gate와 Si 기판사이의 산화층 두께가 3nm일 때 최적의 전기적 특성을 보였다. 이때, side gate 전압은 3V, 그리고 drain 전압은 1.5V를 인가하였다. 결과적으로 DG MOSFET의 전기적 특성은 main gate와 side gate 사이의 산화층 두께보다 main gate와 Si기판사이의 산화층 두께가 중요함을 알았다.

• 한국응용과학기술학회지
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• 제32권2호
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• pp.232-239
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• 2015

화학기상증착법(CVD)을 이용하여 Cu-foil 위에 합성된 대면적의 단층 그래핀(Graphene)을 폴리머 탄성융합체 PDMS(Polydimethylsiloxane)를 이용하여 건식으로 전사하는 기술을 연구하였다. 이때, $UV/O_3$처리를 통해 목표 기판(target substrate)의 표면 개질을 변화시켜 그래핀의 손상이 최소화되로록 그래핀을 전사하였다. 이 과정을 반복 실행하여 그래핀을 다층(1~4 layers)으로 $SiO_2/Si$기판 위에 적층하였으며, 전사된 다층 그래핀의 품질평가를 위하여 광투과율과 면저항의 변화를 측정하였다.

• Journal of Advanced Marine Engineering and Technology
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• 제32권3호
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• pp.461-467
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• 2008

It was studied the effect of a pre-deposited ultrathin Al layer as part of a buffer layer for the growth of GaN. AlN buffer layers were deposited on a Si(111) substrate using an RF sputtering technique, followed by GaN using hydride vapor phase epitaxy (HVPE). Several atomic layers of Al were deposited prior to AlN sputtering and the samples were compared with the others grown without pre-deposition of Al. And it was also studied the influence of AlN buffer layer thickness on the growth of GaN. The peak wavelength of the photoluminescence (PL) was varied with increasing the thickness of the GaN and AlN layers. The optimum thickness of AlN on a Si(111) substrate with an ultrathin Al layer was about $260{\AA}$. Scanning electron microscope (SEM) images showed coalescent surface morphology and X-ray diffraction (XRD) showed a strongly oriented GaN(0002) peak.

• 비파괴검사학회지
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• 제16권4호
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• pp.241-250
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• 1997

액체/고체 경계면에서 후방 복사된 초음파의 주파수 분석에 의해 Si layer/mesh Au/Si substrate 시편에 존재하는 표면 탄성파의 주파수 의존성이 측정되었다. 사용된 광역 탐촉자(2, 5, 10MHz)의 주파수에 따라 다르게 나타난 후방 복사의 입사각 의존성은 이 현상이 표면 지역에 발생된 표면파로부터의 에너지 복사에 의한 것임을 보여주었다. 후방 산란된 초음파의 입사각 의존성을 연속적으로 측정하기 위한 초음파 각도계가 제작되었고 다른 비율의 구리 분말이 섞인 에폭시에 의해 접착된 Ni layer/Al substrate 시편에 대해 후방복사 세기의 입사각 의존성이 측정되었다. (5MHz) 후방 복사의 폭과 패턴은 표면파 속도의 주파수 의존성, layer 접합의 질 그리고 표면 지역의 구조 등 여러 정보를 가지고 있음이 밝혀졌다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2000년도 하계학술대회 논문집 C
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• pp.1720-1723
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• 2000

Boron doped conducting diamond thin film were grown on Si substrate by microwave plasma chemical vapor deposition from a gaseous feed of hydrogen, acetone/methanol and solid boron. The doping level of boron was controlled from 0ppm to $10^4$ppm (B/C). The Si substrate was tilted ca. 10$^{\circ}$ to make Si substrate have different height and temperature. Experimental results show that same condition but different temperature of Si substrate by height made different crystalline of diamond thin film. There were appeared 3$\sim$4 step of different crystalline morphology of diamond. To characterize the boron-doped diamond thin film, Raman spectroscopy was used for identification of crystallinity. To survey surface morphology, microscope was used. Grain size was changed gradually by different temperature due to different height. The Raman spectrum of film exhibited a sharp peak at 1334$cm^{-1}$, which is characteristic of crystalline diamond. The lower position of diamond film position, the more non-diamond component peak appeared near 1550$cm^{-1}$.