• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.30 no.3
• /
• pp.185-191
• /
• 2017

Cadmium compounds with one dimension (1D) nanostructures have attracted attention for their excellent electrical and optical properties. In this study, vertically aligned CdTe-Si nanostructures with high density were synthesized by several simple chemical reactions. First, l D Te nanostructures were synthesized by silver assisted chemical Si wafer etching followed by a galvanic displacement reaction of the etched Si nanowires. Nanowire length was controlled from 1 to $25{\mu}m$ by adjusting etching time. The Si nanowire galvanic displacement reaction in $HTeO_2{^+}$ electrolyte created hybrid 1D Te-branched Si nanostructures. The sequential topochemical reaction resulted in $Ag_2Te-Si$ nanostructures, and the cation exchange reaction with the hybrid 1D Te-branched Si nanostructures resulted in CdTe-Si nanostructures. Wet chemical processes including metal assisted etching, galvanic displacement, topochemical and cation exchange reactions are proposed as simple routes to fabricate large scale, vertically aligned CdTe-Si hybrid nanostructures with high density.

• Bulletin of the Korean Chemical Society
• /
• v.33 no.11
• /
• pp.3576-3580
• /
• 2012

Larva-like GaS nanostructures synthesized by the thermal evaporation of Ga metals and S powders were coated with $SiO_2$ by the sputtering technique. Transmission electron microscopy and X-ray diffraction analyses revealed that the cores and shells of the GaS-core/$SiO_2$-shell larva-like nanostructures were single crystal wurtzite-type hexagonal structured-GaS and amorphous $SiO_2$, respectively. Photoluminescence (PL) measurements at room temperature showed that the passivation of the larva-like GaS nanostructures was successfully achieved with $SiO_2$ without nearly harming the major emission from the wires. However, subsequent thermal annealing treatment was found to be undesirable owing to the degradation of their emission in intensity.

• Journal of the Korean Vacuum Society
• /
• v.16 no.6
• /
• pp.474-478
• /
• 2007

Nanostructures of $SiN_x$ were made by bombardment of ionized $N_2$ on Si surface and subsequent annealing. Atomic force micrograph showed the density of $SiN_x$ nanostructures was $3\times10^{10}/cm^2$. Their lateral size and height were 40$\sim$60 nm and 15 nm, respectively. The chemical state of the nanostructure was measured using X-ray photoelectron spectroscopy, which changed from $SiN_x$ to $Si_3N_4\;+\;SiN_x$ as the bombarding ionized gas current increases. Upon annealing, transmission electron micrograph showed a clear evidence for crystalline Si phase formation inside the $SiN_x$ nanostructures. Photoluminescence peak observed at around 400nm was thought to be originated from the interface states between the nanocrystalline Si and surrounding $SiN_x$ nanostructures.

• Journal of the Korean Vacuum Society
• /
• v.20 no.5
• /
• pp.381-386
• /
• 2011

We fabricated the ZnO (zinc oxide)/$SiO_2$ (silicon dioxide) branch hierarchical nanostructures by the e-beam evaporation of $SiO_2$ onto the surface of the electrochemically grown ZnO nanorods on Si substrate, which leads to the self-assembled $SiO_2$ nanorods by oblique angle deposition between vapor flux and vertically aligned ZnO nanorods. In order to investigate the effects of $SiO_2$ deposition on the morphology and optical property of ZnO/$SiO_2$ branch hierarchical nanostructures, the evaporation time of $SiO_2$ was varied under a fixed deposition rate of 0.5 nm/s. The vertically aligned ZnO nanorods on Si substrate exhibited a low reflectance of <10% in the wavelength range of 300~535 nm. For ZnO/$SiO_2$ branch hierarchical nanostructures at 100 s of evaporation time of $SiO_2$, the more improved antireflective property was achieved. From these results, ZnO/$SiO_2$ branch hierarchical nanostructures are very promising for optoelectronic and photovoltaic device applications.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2014.02a
• /
• pp.184.1-184.1
• /
• 2014

Nanostructures on Graphene surface receive highly attraction for many applications ranging from sensing technologies to molecular electronics. Recently J. Jasuja et al. reported the electrical property tailoring and Raman enhancement by the implantation and growth of dendritic gold nanostructures on graphene derivatives [ACSNANO, 3, 2358, 2013] Here, we introduced Si vapor on the graphen to induce the nanostructure. The surface property change of graphene by controlling the amount of Si and the thickness of graphene were investigated using high resolution photoemission spectroscopy (HRPES), and atomic force microscopy (AFM). The Si nanostructures on graphene show the thickness dependency of graphene, and the size of Si nano-structure reached to 7 nm and 15 nm on the mono and the multilayered graphene after $30{\AA}$ Si evaporation.

• Journal of the Korea Academia-Industrial cooperation Society
• /
• v.20 no.5
• /
• pp.81-86
• /
• 2019

Metal oxide/graphene composites have been known as promising functional materials for advanced applications such as high sensitivity gas sensor, and high capacitive secondary battery. In this study, tin dioxide ($SnO_2$) nanostructures were grown on chemically synthesized graphene nanosheets using a two-zone horizontal furnace system. The large area graphene nanosheets were synthesized on Cu foil by thermal chemical vapor deposition system with the methane and hydrogen gas. Chemically synthesized graphene nanosheets were transferred on cleaned $SiO_2$(300 nm)/Si substrate using the PMMA. The $SnO_2$ nanostuctures were grown on graphene nanosheets at $424^{\circ}C$ under 3.1 Torr for 3 hours. Raman spectroscopy was used to estimate the quality of as-synthesized graphene nanosheets and to confirm the phase of as-grown $SnO_2$ nanostructures. The surface morphology of as-grown $SnO_2$ nanostructures on graphene nanosheets was characterized by field-emission scanning electron microscopy (FE-SEM). As the results, the synthesized graphene nanosheets are bi-layers graphene nanosheets, and as-grown tin oxide nanostructures exhibit tin dioxide phase. The morphology of $SnO_2$ nanostructures on graphene nanosheets exhibits complex nanostructures, whereas the surface morphology of $SnO_2$ nanostructures on $SiO_2$(300 nm)/Si substrate exhibits simply nano-dots. The complex nanostructures of $SnO_2$ on graphene nanosheets are attributed to functional groups on graphene surface.

• Journal of the Korea Academia-Industrial cooperation Society
• /
• v.20 no.4
• /
• pp.497-502
• /
• 2019

Metal oxide nanostructures are promising materials for advanced applications, such as high sensitive gas sensors, and high capacitance lithium-ion batteries. In this study, tin oxide (SnO) nanostructures were grown on a Si wafer substrate using a two-zone horizontal furnace system for a various substrate temperatures. The raw material of tin dioxide ($SnO_2$) powder was vaporized at $1070^{\circ}C$ in an alumina crucible. High purity Ar gas, as a carrier gas, was flown with a flow rate of 1000 standard cubic centimeters per minute. The SnO nanostructures were grown on a Si substrate at $350{\sim}450^{\circ}C$ under 545 Pa for 30 minutes. The surface morphology of the as-grown SnO nanostructures on Si substrate was characterized by field-emission scanning electron microscopy (FE-SEM) and atomic force microscopy (AFM). Raman spectroscopy was used to confirm the phase of the as-grown SnO nanostructures. As the results, the as-grown tin oxide nanostructures exhibited a pure tin monoxide phase. As the substrate temperature was increased from $350^{\circ}C$ to $424^{\circ}C$, the thickness and grain size of the SnO nanostructures were increased. The SnO nanostructures grown at $450^{\circ}C$ exhibited complex polycrystalline structures, whereas the SnO nanostructures grown at $350^{\circ}C$ to $424^{\circ}C$ exhibited simple grain structures parallel to the substrate.

• Bulletin of the Korean Chemical Society
• /
• v.33 no.9
• /
• pp.2830-2844
• /
• 2012

This review covers recent developments in our group regarding the synthesis, characterization and applications of single-crystalline one-dimensional nanostructures based on a wide range of material systems including noble metals, metal silicides and metal germanides. For the single-crystalline one-dimensional nanostructures growth, we have employed chemical vapor transport approach without using any catalysts, capping reagents, and templates because of its simplicity and wide applicability. Au, Pd, and Pt nanowires are epitaxially grown on various substrates, in which the nanowires grow from seed crystals by the correlations of the geometry and orientation of seed crystals with those of as-grown nanowires. We also present the synthesis of numerous metal silicide and germanide 1D nanostructures. By simply varying reaction conditions, furthermore, nanowires of metastable phase, such as $Fe_5Si_3$ and $Co_3Si$, and composition tuned cobalt silicides (CoSi, $Co_2Si$, $Co_3Si$) and iron germanides ($Fe_{1.3}Ge$ and $Fe_3Ge$) nanowires are synthesized. Such developments can be utilized as advanced platforms or building blocks for a wide range of applications such as plasmonics, sensings, nanoelectronics, and spintronics.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.16 no.1
• /
• pp.12-19
• /
• 2006

Metalorganic chemical vapor deposition (MOCYD) techniques have been applied to fabricate semiconducting ZnO thin films and nanostructures, which are promising for novel optoelectronic device applications using their unique multifunctional properties. The growth and characterization of ZnO thin films on Si and $SiO_2$ substrates by MOCYD as fundamental study to realize ZnO nanostructures was carried out. The precise control of initial nucleation processes was found to be a key issue for realizing high quality epitaxial layers on the substrates. In addition, fabrication and characterization of ZnO nanodots with low-dimensional characteristics have been investigated to establish nanostructure blocks for ZnO-based nanoscale device application. Systematic realization of self- and artificially-controlled ZnO nanodots on $SiO_2/Si$ substrates was proposed and successfully demonstrated utilizing MOCYD in addition with a focused ion beam technique.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2005.11a
• /
• pp.9-10
• /
• 2005

We report on the fabrication and characterization of self- and artificially-controlled ZnO nanostructures have been investigated to establish nanostructure blocks for ZnO-based nanoscale device application. Systematic realization of self- and artificially-controlled ZnO nanostructures on $SiO_2/Si$ substrates was proposed and successfully demonstrated utilizing metalorganic chemical vapor deposition (MOCVD) in addition with a focused ion beam (FIB) technique. Widely well-aligned two-dimensional ZnO nanodot arrays ($4{\sim}10^4$ nanodots of 130-nm diameter and 9-nm height over $150{\sim}150{\mu}m^2$ with a period of 750 nm) have been realized by MOCVD on $SiO_2/Si$ substrates patterned by FIB. A low-magnification FIB nanopatterning mode allowed the periodical nanopatterning of the substrates over a large area in a short processing time. Ga atoms incorporated into the surface areas of FIB-patterned nanoholes during FIB engraving were found to play an important role in the artificial control of ZnO, resulting in the production of ZnO nanodot arrays on the FIB-nanopatterned areas. The nanodots evolved into dot clusters and rods with increasing MOCVD growth time.