Proceedings of the Korean Vacuum Society Conference (한국진공학회:학술대회논문집)
- 2014.02a
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- Pages.184.1-184.1
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- 2014
Si Nanostructure on Graphene
- Han, Yong (Pohang Accelerator Laboratory, POSTECH) ;
- Kim, Heeseob (Pohang Accelerator Laboratory, POSTECH) ;
- Hwang, Chan-Cuk (Pohang Accelerator Laboratory, POSTECH) ;
- Lee, Hangil (Department of Chemistry, Sookmyung Women's Univ.) ;
- Kim, Bongsoo (Pohang Accelerator Laboratory, POSTECH) ;
- Kim, Ki-jeong (Pohang Accelerator Laboratory, POSTECH)
- Published : 2014.02.10
Abstract
Nanostructures on Graphene surface receive highly attraction for many applications ranging from sensing technologies to molecular electronics. Recently J. Jasuja et al. reported the electrical property tailoring and Raman enhancement by the implantation and growth of dendritic gold nanostructures on graphene derivatives [ACSNANO, 3, 2358, 2013] Here, we introduced Si vapor on the graphen to induce the nanostructure. The surface property change of graphene by controlling the amount of Si and the thickness of graphene were investigated using high resolution photoemission spectroscopy (HRPES), and atomic force microscopy (AFM). The Si nanostructures on graphene show the thickness dependency of graphene, and the size of Si nano-structure reached to 7 nm and 15 nm on the mono and the multilayered graphene after