• Proceedings of the Korean Radioactive Waste Society Conference
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• 2018.05a
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• pp.51-52
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• 2018

Selective oxidation of RE elements from the U/RE metal ingot was studied in this paper using electrochemical process. Constant potential of -1.7V was applied between anode and cathode, where the potential value corresponds to standard potentials between actinide and rare earth materials. When the current values approached to nearly 0 mA, the reaction was finished. It is confirmed from the EPMA analysis that only U part of the U/RE ingot was remained. The metal recovered to the zinc cathode was obtained through the distillation process and it is being chemically analyzed in the KAERI analytical laboratory.

• Journal of the Semiconductor & Display Technology
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• v.2 no.1
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• pp.21-24
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• 2003

Sludged silicon powders that are generated during silicon ingot slicing process have potential usage as silicon source in fabricating silicon carbide powders by adding carbon. A thermodynamic calculation is performed to consider a plausible formation condition for the silicon carbide powders. A thin silicon oxide layer around silicon powder is sufficient to supply equilibrium oxygen partial pressure at the formation temperature($1400^{\circ}C$) of the silicon carbide in the Si-C-O ternary system. Formation of silicon carbide by using the sludged silicon powders is more efficient than by using silicon oxide powders.

• Resources Recycling
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• v.11 no.6
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• pp.31-37
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• 2002

Microstructure of aluminum alloys produced by the different mixing ratio of secondary ingot made by aluminum UBC (used beverage can) and virgin aluminum was investigated. The phase transitions of casted ingot by heat treatment were also studied. The alloys were melted at the electric resistance furnace, then casted using ceramic filter. Homogenization heat treatment was conducted at $615^{\circ}C$ for 10hrs to control cast microstructure. There were several kinds of phases, in as-cast condition, such as $\alpha$($Al_{12}$ $((Fe,Mn)_3$Si), $\beta$($Al_{6}$ (Fe,Mn)), and fine $Mg_2$Si phases. Especially, the amount of $\beta$-phase which was harmful in forming process was large. The $\beta$-Phase formed was transformed to u-phase by heat treatment. The fine $Mg_2$Si in the aluminum matix was also transformed to $\alpha$-phase by this heat treatment. Impurities filtered during casting process were identified as intermetallic compounds of Fe, Cu, Si.

• Korean Journal of Materials Research
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• v.22 no.9
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• pp.450-453
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• 2012

In crystalline solar cells, the substrate itself constitutes a large portion of the fabrication cost as it is derived from semiconductor ingots grown in costly high temperature processes. Thinner wafer substrates allow some cost saving as more wafers can be sliced from a given ingot, although technological limitations in slicing or sawing of wafers off an ingot, as well as the physical strength of the sliced wafers, put a lower limit on the substrate thickness. Complementary to these economical and techno-physical points of view, a device operation point of view of the substrate thickness would be useful. With this in mind, BC-BJ Si and GaAs solar cells are compared one to one by means of the Medici device simulation, with a particular emphasis on the substrate thickness. Under ideal conditions of 0.6 ${\mu}m$ photons entering the 10 ${\mu}m$-wide BC-BJ solar cells at the normal incident angle (${\theta}=90^{\circ}$), GaAs is about 2.3 times more efficient than Si in terms of peak cell power output: 42.3 $mW{\cdot}cm^{-2}$ vs. 18.2 $mW{\cdot}cm^{-2}$. This strong performance of GaAs, though only under ideal conditions, gives a strong indication that this material could stand competitively against Si, despite its known high material and process costs. Within the limitation of the minority carrier recombination lifetime value of $5{\times}10^{-5}$ sec used in the device simulation, the solar cell power is known to be only weakly dependent on the substrate thickness, particularly under about 100 ${\mu}m$, for both Si and GaAs. Though the optimum substrate thickness is about 100 ${\mu}m$ or less, the reduction in the power output is less than 10% from the peak values even when the substrate thickness is increased to 190 ${\mu}m$. Thus, for crystalline Si and GaAs with a relatively long recombination lifetime, extra efforts to be spent on thinning the substrate should be weighed against the expected actual gain in the solar cell output power.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.32 no.3
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• pp.115-120
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• 2022

A brown ring (hereinafter referred to as BR) on the inner surface of a quartz glass crucible used in the manufacturing process of a silicon ingot for semiconductor wafers was studied. BR is 20~30 ㎛ in size and has an asymmetric brown ring shape. The size and distribution of BR were different depending on the crucible location, and the size and distribution of BR were the largest and most abundant in the round part with the highest crucible temperature during Si ingot growth. BR contains cristobalite, which has a higher coefficient of thermal expansion than quartz glass, so it is considered that surface cracks appear. The color development of BR and pin holes are presumed to be due to oxygen vacancies.

• Journal of the Korean Vacuum Society
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• v.1 no.2
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• pp.244-253
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• 1992

BiSI, BiSI : Co, BiSeI 및 BiSeI : Co 단결정을 고순도의 성분원소와 8.6mole% 과잉의 Iodine를 투명석영관내에 넣고 진공봉입하여 합성한 ingot를 사용하여 수직 Bridgman 방법으로 성장시켰다. 성장된 단결정은 orthorhombic 구조였고, energy band 구 조는 간접전이형으로 293K에서 광학적 energy gap은 각각 1.590eV, 1.412eV, 1.282eV 및 1.249eV로 주어지며, energy gap의 온도의존성은 Varshni 방정식으로 잘 표현된다. Cobalt 를 첨가할 때 나타나는 불순물 광흡수 peak는 Td symmetry점에 위치한 Co2+, Co3+ ion의 energy 준위들 사이의 전자전이에 의해서 나타난다.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.3 no.2
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• pp.149-156
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• 1993

Polycrystalline silicon was produced from metallurgical-grade Si by unidirectional solidification. Variations of impurity concentration and resistivity in the ingots have been investigated. X-ray diffraction analysis has also been performed to examine the crystal orientation. According to the X-ray diffraction analysis on the polycrystalline silicon, preferential orientation was changed from ( 220) into ( III ) with decreasing growth rate. Also, with increasing growth rate and fraction solidified, the resistivity tends to decrease.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2005.05a
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• pp.176-179
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• 2005

Spray casting of hypereutectic Al-Si based alloy has been reported to provide distinct advantages over ingot metallurgy (IM) or rapid solidification/powder metallurgy (RS/PM) process in terms of microstructure refinement. Hypereutectic Al-Si based alloys have been regarded attractive for automotive and aerospace application, due to high specific strength, good wear resistance, low coefficient of thermal expansion, high thermal stability, and good creep resistance. In this study, hypereutectic Al-25Si-2.0Cu-1.0Mg alloy was prepared by OSPREY spray casting process. High temperature deformation behavior of the hypereutectic Al-Si based alloy has been investigated by applying the internal variable theory proposed by Chang et al. The change of strain rate sensitivity and Creep transition were analyzed by using the load relaxation test and constant creep test.

• Journal of Korea Foundry Society
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• v.21 no.2
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• pp.119-126
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• 2001

Al/15%Gr. composite have been manufactured by mixing, compacting, and extruding aluminium powder and graphite powder. Then, Al-6%Si/x%Gr., Al-12%Si/x%Gr., and Al-18%Si/x%Gr.(x: 0, 2, 4, 6, 8) composites have been manufactured by remelting the extruded materials(Al/15%Gr.), Al-33.3%Si alloy, and Al ingot, etc. We conducted experiments to chracterize the microstructure, and damping properties and hardness. The result of microstructure experiment on Al-x%Si/y%Gr. composites reveals the good dispersion of graphite. As to Al-Si/y%Gr. composites, the more the graphite contents, the less the tensile strength. And the tensile strength varied according to contents of Si: with its highest value in Al-18%Si/y%Gr. composites and lowest in Al-6%Si/y%Gr. composites. As to Al-x%Si/y%Gr. composites, the more the contents of graphite, the more the vibration damping properties. And we can get the highest vibration damping rate in Al-12%Si/y%Gr. composites which matrix structure is an eutectic component.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.10 no.1
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• pp.42-47
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• 2000

The surface structure and the crystalline features in the near surface region have been investigated for CZ(Czochralski) grown Si wafers. Si wafers were annealed by RTA (Rapid Thermal Annealing) method in H$_2$ambient after mirror polished process. The densities of COPs (Crystal Originated Particles) after RTA process were remarkably decreased at the surface and in the region of 5um depth from the surface as well. terrace type surface structure which was formed by etching and re-arrangement of Si atoms during $H_2$annealing process also has been observed.