• 한국주조공학회지
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• 제12권4호
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• pp.335-345
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• 1992

Aluminum alloy matrix composites reinforced with various amounts of SiC particles have been produced by rheo-compocasting followed by hot extrusion. A relatively uniform distribution of SiC particles in the composites was obtained. The amounts of pore and SiC particles cluster were relatively small in the composites. Particle free zones were observed in the hot extruded composites when the amount of SiC particles was less than 20 vol%. However, the width of particle free zone decreases with the increase of SiC particle content. Eutectic Si phase play an important role for improving bonding between SiC particle and matrix. Tensile and yield strength increased with the increase of SiC particle content. the strenthening effect of SiC particle addition was effective even at relatively high temperature of 573 K.

• Journal of Power Electronics
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• 제19권4호
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• pp.1054-1067
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• 2019

This paper systematically investigates the influence of device parameters spread on the current distribution of paralleled silicon carbide (SiC) MOSFETs. First, a variation coefficient is introduced and used as the evaluating norm for the parameters spread. Then a sample of 30 SiC MOSFET devices from the same batch of a well-known company is selected and tested under the same conditions as those on datasheet. It is found that there is big difference among parameters spread. Furthermore, comprehensive theoretical and simulation analyses are carried out to study the sensitivity of the current imbalance to variations of the device parameters. Based on the concept of the control variable method, the influence of each device parameter on the steady-state and transient current distributions of paralleled SiC MOSFETs are verified separately by experiments. Finally, some screening suggestions of devices or chips before parallel-connection are provided in terms of different applications and different driver configurations.

• 전자공학회논문지A
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• 제28A권5호
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• pp.375-379
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• 1991

Formation of TiAs precipitate through the reaction between TiSi2 with C54 structure and heavily doped arsenic ion in poly-silicon, and influence of TiSAs and silicon distribution resulted from the reaction TiSi2+As ->2Si on the morphology degradation have been studied.

• 소성∙가공
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• 제12권2호
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• pp.102-109
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• 2003

In the manufacturing process of metal matrix composites parts, thixoforging is one of the most effective forming processes. The major purpose of the current study is to provide the proper conditions such as the die shape, the forging velocity, the forging time, the forging pressure and reinforcement injection velocity and pressure on various defects in thixoforged cylinder liner, filling tests were performed by MAGMA S/W. In order to evaluate the effectiveness of the calculated conditions which is given by computer aided engineering, A357, A380 and SiC$_{p}$/A380 cylind~5$mu extrm{m}$r liner were fabricated under the calculated conditions. SiC$_{p}$/A380 composite billets were fabricated by both the mechanical stirring and electrical magnetic stirring process. Incase fo SiC$_{p}$/A380 composite cylinder liner, reinforcement distribution and effect of reinforcement(SiC$_{p}$) content(10~20 vol. %)and size(5.5~14${\mu}{\textrm}{m}$) on the mechanical properties were investigatedstigated.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1998년도 추계학술대회 논문집 학회본부 C
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• pp.925-928
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• 1998

In this paper, the electron transport characteristics in $SiH_4$ has been analysed over the E/N range $0.5{\sim}300[Td]$ and Pressure value 0.5, 1, 2.5 [Torr] by a two-term approximation Boltzmann equation method and by a Monte Carlo simulation. The motion has been calculated to give swarm parameters for the electron drift velocity. diffusion coefficient, electron ionization, mean energy and the electron energy distribution function. The electron energy distribution function has been analysed in $SiH_4$ at E/N=30, 50[Td] for a case of the equilibrium region in the mean electron energy and respective set of electron collision cross sections. The results of Boltzmann equation and Monte carlo simulation have been compared with experimental data by Pollock, Ohmori, cottrell and Walker.

• 마이크로전자및패키징학회지
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• 제12권1호
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• pp.77-85
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• 2005

Impedance spectroscopy was applied to low temperature polycrystalline Si in order to investigate the electrical/dielectric information in polycrystalline Si. By combined microstructure and impedance spectroscopy works, it was shown that the electrical information is sensitive to the corresponding microstructure, i.e., the grain size and distribution, judged from the capacitance vs. grain size relationship. At $360 mJ/cm^2$, the maximum in capacitance and the minimum in resistance correspond to the largest grain sizes of unimodal distribution in polycrystalline Si. The electrical/dielectric characterization is compared with Raman spectroscopic characterizations in terms of microstructure.

• 대한기계학회논문집B
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• 제26권5호
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• pp.710-715
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• 2002

The spherical nonagglomerated and uniform nanometer-size SiO$_2$particles are synthesized by the injection of TEOS vapor, irons and reaction gas in a furnace. Ions are generated by corona discharge and these ions charge SiO$_2$particles. As a result, spherical, nonagglomerated and ultrafine particles are generated in various conditions. Their morphology, charging portion and size distribution are examined by using TEM, ESP and SMPS. As the applied voltage of electrode changes from 0 to 5.0 kV, it is observed that the melon diameter of SiO$_2$particle decreases from 94 nm to 42 nm.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2005년도 학술대회 논문집 전문대학교육위원
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• pp.97-100
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• 2005

This paper describes the electron transport characteristics in SiH4 has been analysed over the E/N range 0.5${\sim}$300[Td] and Pressure value 0.5, 1, 2.5 [Torr] by a two-term approximation Boltzmann equation method and by a Monte Carlo simulation. The motion has been calculated to give swarm parameters for the electron drift velocity, diffusion coefficient, electron ionization, mean energy and the electron energy distribution function. The electron energy distribution function has been analysed in $SiH_4$ at E/N=30, 50[Td] for a case of the equilibrium region in the mean electron energy and respective set of electron collision cross sections. The results of Boltzmann equation and Monte carlo simulation have been compared with experimental data by Pollock, Ohmori, cottrell and Walker.

• Bulletin of the Korean Chemical Society
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• 제11권1호
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• pp.1-7
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• 1990

We present a theoretical investigation on the etching of an Al solid by $SiCl_4$ molecules at a collision energy of 600 eV. The classical trajectory method is employed to calculate Al etching yields, degree of anisotropy, kinetic energy distribution and angular distribution. The calculated results are compared with the reaction of a Cu solid by $SiCl_4$. The major products of the reaction are aluminum monomers and dimers together with considerable quantities of multimers. The Al solid shows better etching yield and better anisotropy than the Cu solid. This is consistent with the problem in the CMOS micro-fabrication of the CuAl and CuAlSi alloys. The relevance of these calculations for the dry etching of CuAl alloy is discussed.

• 전자공학회논문지A
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• 제33A권6호
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• pp.151-157
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• 1996

We propose a mechanism for the formation of pinholes in the Si-buffer layer, through the observations with varying the process- and structure variables in the SEPOX (selective poly-oxidation) process, an isolation method for sub-u DRAMs. Pinholes are formed through the accumulation of Si vacancies generated by the oxidation of Si, in which Si atoms leave the sites (vacancies) at the Si/SiO$_{2}$ interfaces and diffuse into the oxide to be oxidized near interface. In the course of the accumulation of Si-vacancies, the stress induced in the Si-buffer layer affects the migration of vacancies to result in the final size and distribution of pinholes. This paper may be, to our knowledge, the first report about the oxidation-induced pinhole in the Si/SiO$_{2}$ system.