• Title/Summary/Keyword: Si distribution

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The Study on the Non-Uniformity of PECVD SiO2 Deposition by the Plasma Diagnostics (플라즈마 진단에 의한 PECVD SiO2 증착의 불균일성 원인 연구)

  • Ham, Yong-Hyun;Kwon, Kwang-Ho;Lee, Hyun-Woo
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.24 no.2
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    • pp.89-94
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    • 2011
  • The cause of the thickness non-uniformity in the large area deposition of $SiO_2$ films by PECVD(Plasma Enhanced Chemical Vapor Deposition) was investigated by the plasma diagnostics. The spatial distribution of the plasma species in the chamber was obtained with DLP(Double Langmuir Probe) and the new-designed probe-type QMS(Quadrupole Mass Spectrometer). From the relationship between the spatial distribution of the plasma species and the depositing rate of the $SiO_2$ films, it was conformed that the non-uniform deposition of $SiO_2$ films was related with the spatial distribution of the oxygen radical density and electron temperature.

The Distribution Behavior of Alloying Elements in Matrices and Carbides of Chromium White Cast Iron (크롬백주철의 기지조직 및 탄화물에 있어서 합금원소의 거동)

  • Ryu, Seong-Gon
    • Korean Journal of Materials Research
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    • v.10 no.7
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    • pp.489-492
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    • 2000
  • Three different white cast irons alloyed with Cr and Si were prepared in order to study their distribution be-havior in matrices and carbides. The specimens were produced using a 15kg-capacity high frequency induction fur-nace. Melts were super-heated to $1600^{\circ}C$, and poured at $1550^{\circ}C$ into a pepset mold. Three combinations of the alloys were selected so as to observe the distribution behavior of Cr and Si : 0.5%C-25.0%Cr-1.0%Si(alloy No. 1), 0.5%C-5.0%Cr-1.0%Si(alloy No. 2) and 2.0%C-5.0%Cr-1.0%Si(alloy No. 3). Cellular $M_7C_3$ carbides-$\delta$ferrite eutectic were developed at $\delta$ferrite liquid interfaces in the alloy No. 1 while only traces of $M_7C_3$ carbides-$\delta$ferrite eutectic were precipitated in the alloy No. 2. With the addition of 2.0% C and 5.0% Cr, ledeburitic $M_3C$ carbides instead of cellular $M_7C_3$ carbides were precipitated in the alloy No. 3. Cr was distributed preferentially to the $M_7C_3$ carbides rather than to the matrix structure while more Si was partitioned in the matrix structure rather than the $M_7C_3$ carbides. $K^m$ for Cr was ranged from 0.56 to 0.68 while that for Si was from 1.12 to 1.28. $K^m$ for Cr had a lower value with increased carbon contents. The mass percent of Cr was higher in the $M_7C_3$ carbides with increased Cr contents.

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Distribution of THMs at Drinking Water Purification Plants in the East Coast Region of Gangwon-do (강원도 동해안 지역 정수장의 THMs 분포)

  • Huh, In-Ryang;Shin, Yong-Keon;Park, Sung-Bin;Lee, Teak-Soo;Shim, Tae-Heum
    • Journal of Environmental Health Sciences
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    • v.39 no.3
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    • pp.223-229
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    • 2013
  • Objectives: In an effort to examine the distribution of THMs (Trihalomethane) generated from chlorine disinfection by the drinking water treatment plants located on the east coast region of Gangwon-do, this study surveyed the distribution and concentrations of each component of THMs twice per month for 5 years from 2008 to 2012. Fluctuation pattern in the seasonal generation amount was identified. In addition, the correlation between the concentration of organic substances in water and THMs was assessed, along with stability of purified water quality supplied by the water treatment plants on the east coast by analyzing the composition ratio of each component that constitutes THMs and the detection frequency. Method: The research was done on purified water supplied by 29 water treatment plants in 7 cities and counties (Goseong-gun, Sokcho-si, Yangyang-gun, Gangneung-si, Donghae-si, Samcheok-si, Taebaek-si) located in Gangwon-do on the east coast. Water samples were collected twice a month from 2008 to 2012 and were investigate for chloroform, bromodichloromethane (BDCM), dibromochloromethane (DBCM), and bromoform, based on analysis through Purge-Trap (Tekmar 3000) devices using FID-attached GC (HP 6890, Hewlett Packard). Result: THMs concentration detected at Gangneung-si was 0.0086mg/L, Goseong-gun 0.0019mg/L, Donghae-si 0.0099 mg/L, Samcheok-si 0.0016 mg/L, Sokcho-si 0.0057 mg/L, Yangyang-gun 0.0027 mg/L and Taebaek-si 0.0038 mg/L. As the THMs composition rate, chloroform constitutes 51.4% followed bybromodichloromethane 22.3%, bromoform 15.2% and dibromochloromethane 11.1% respectively. Conclusion: Throughout the entire THMs survey areas and period, the maximum concentration was 0.072mg/L, which did not exceed the water quality standards (0.1 mg/L), and the overall average concentration was very low at 0.0044 mg/L.

Distribution Behavior of Bi and Pb Between Molten PbO-SiO2 Slag and Bi (용융(熔融) PbO-SiO2계(系) 슬래그와 Bi 사이의 Bi와 Pb의 분배거동(分配擧動))

  • Kim, Se-Jong;Kim, Eung-Jin;Sohn, Ho-Sang
    • Resources Recycling
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    • v.21 no.5
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    • pp.65-71
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    • 2012
  • The equilibrium distribution of bismuth and lead between molten PbO-$SiO_2$ slag and bismuth phase was studied in the temperature range of $775^{\circ}C$ to $850^{\circ}C$ in a MgO crucible. The oxygen partial pressure of atmosphere was controlled by $P_{CO2}/P_{CO}$ ratio. The value of $(%PbO)_{slag}/[%Pb]_{metal}$ increased with increasing $SiO_2$ content of slag, and the value of $(%Bi_2O_3)_{slag}/[%Bi]_{metal}$ decreased with increasing $SiO_2$ content of slag. The concentration of Pb in metal increased with increasing temperature. These experimental results agreed well with the thermodynamic prediction.

Simulation of Characteristics of Amorphous-Silicon Thin Film Transistor for Liquid Crystal Display Using the Mixed Simulator (혼합시뮬레이터를 사용한 액정 표시기용 비정질 실리콘 박막 트랜지스터의 특성 시뮬레이션)

  • 이상훈;김경호
    • Journal of the Korean Institute of Telematics and Electronics A
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    • v.32A no.12
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    • pp.122-129
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    • 1995
  • The most important feature of a-Si TFT is dense localized states such as dangling bonds which exist in tis bandgap. Electrons trapped by localized states dominate the potential distribution in the active a-Si region ,and influence the performance of a-Si TFT. In this paper, we describe the electrical characteristics of a-Si TFT with respect to trap distribution within bandgap, electron mobility and interface states using 2-Dimensional device simulator and compare the result of simulation with measurements. Using the mixed-mode simulator, we can predict the potential variation of pixel which causes residual image problem during the turn-off of a-Si TFT driving circuit. Therefore it is possible to consider trade-off between potential variation of pixel and turn-on current of a-Si TFT for the optimized driving circuit.

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Synthesis of Monodisperse Spherical SiO2 and Self-Assembly for Photonic Crystals

  • Lee, Byung-Kee;Jung, Young-Hwa;Kim, Do-Kyung
    • Journal of the Korean Ceramic Society
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    • v.46 no.5
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    • pp.472-477
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    • 2009
  • Monodisperse spherical $SiO_2$ particles of various sizes ($\sim$350 nm and $\sim$800 nm) and size distributions were synthesized from TEOS and MTMS. The particle size and size distribution were controlled by changing the volume ratio of water to ethanol and the reaction temperature. Narrow-sized $SiO_2$ particles with $\sim$3% size distribution were obtained. Self-assembly of the $SiO_2$ particles for photonic crystals were performed by the solvent evaporation method. The number of ordered $SiO_2$ layers can be controlled by changing the amount of the dispersed $SiO_2$ volume fraction in the solvent.

A study for use a vanadium oxide in steel manufacture (제강 공정중 산화바나듐활용 연구)

  • Choi, Young-Key
    • Journal of environmental and Sanitary engineering
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    • v.24 no.3
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    • pp.55-61
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    • 2009
  • Fe-V is used as raw material of vanadium in the steel making process. The purpose of this study, Fe-V is to replace the $VO_{4}$. So the distribution behavior of vanadium in $VO_{4}$ of the steel investigated. The distribution ratio of the vanadium where potential of the free oxygen ion will increase in slag decreased. When CaO and MgO content which is a basic oxide from CaO-$SiO_2$-FetO-MgOsatd. slag increases, S distribution ratio increases. CaO-$SiO_2$-FetO-MgOsatd. slag better than CaO-$SiO_2$-$Al_2O_3$-MgO slag is the recovery of vanadum and desulfurization.

Evaluation of Strength and Residual Stress in $Si_3N_4/SUS304$ Joint ($Si_3N_4/SUS304$ 접합재의 잔류응력 및 강도평가)

  • 박영철;오세욱;조용배
    • Transactions of the Korean Society of Mechanical Engineers
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    • v.18 no.1
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    • pp.101-112
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    • 1994
  • The measurement of residual stress distribution of $Si_3N_4/SUS304$ joint was performed on 23 specimens with the same joint condition using PSPC type X-ray stress measurement system and the two-dimensional elastoplastic analysis using finite element method was also attempted. As results, residual stress distribution near the interface on the ceramic side of the joint was revealed quantitatively. Residual stress on the ceramic side of the joint was turned out to be tensional near the interface, maximum along the edge, varying in accordance with the condition of the joint and variance to be most conspicuous for the residual stress normal to the interface characterized by the stress singularities. In the vicinity of the interface, the high stress concentration occurs and residual stress distributes three-dimensionally. Therefore, the measured stress distribution differed remarkably from the result of the two-dimensional finite-element analysis. Especially at the center of the specimen near the interface, the residual stress, $\sigma_{x}$ obtained from the finite element analysis was compressive, whereas measurement using X-ray yielded tensile $\sigma_{x}$. Here we discuss two dimensional superposition model the discrepancy between the results from the two dimensional finite element analysis and X-ray measurement.

The study on cell Vth distibution induced by heavily doped channel ionn and Si-SiN stress in flash memory cell (과도한 채널 이온 주입 농도 및 Si-SiN 스트레스가 플래쉬 메모리셀 산포에 미치는 영향)

  • Lee Chi-Kyoung;Park Jung-Ho;Kim Han-Su;Park Kyu-Charn
    • Proceedings of the IEEK Conference
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    • 2004.06b
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    • pp.485-488
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    • 2004
  • As scaling down the cell channel length, the increment of B concentration in channel region is inevitable to overcome the punch-through, especially in flash memory cell with 90nm technology. This paper shows that the high dose ion implantation in channel cause the Si defect. which has been proved to be the major cause of the tailed Vth in distribution. And also mechanical stress due to SiN-anneal process can induce the Si dislocation. and get worse it. With decreasing the channel implantation dose, skipping the anneal and reducing the mechanical stress, Si defect problem is solved completely. We are verify first that the optimization of B concentration in channel must be certainly considered in order to improve Si defect. It is also certainly necessary to stabilize the distribution of cell Vth in the next generation of flash memory.

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Effect of Post Weld Heat Treatment for Crystal Orientation Distribution on Friction Stir Welds of Al-Mg-Si Series Aluminum Alloy Sheets (Al-Mg-Si계 알루미늄 합금 판재 마찰교반접합부의 결정 방위 분포에 대한 용접후열처리의 영향)

  • Lee, Kwang-Jin
    • Journal of Welding and Joining
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    • v.27 no.6
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    • pp.62-67
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    • 2009
  • Friction stir welding (FSW) was carried out for Al-Mg-Si series aluminum alloys which are being used for automotive body structure. Consequently, Post weld heat treatment (PWHT) was applied to the friction stir welds to evaluate the effect of the paint baking process which is one of the automotive fabrication process on friction stir welded zone (FSWZ) in 443K for 1.2Ks. Grain structure and its crystal orientation distribution was measured about both the as welded specimens and the post weld heat treated specimens. An optical microscope (OM) and an field emission scanning electron microscope (FE-SEM) was used for observing the grain structure and measuring its crystal orientation distribution, respectively. Changes on the grain structure and its crystal orientation distribution were not detected. From the present results, it was confirmed that the paint baking process after FSW do not affect on the grain structure and its crystal orientation distribution of FSWZ. The comprehensive investigations will be performed for various automotive aluminum alloys manufactured by different processes, in the future.