• 한국전기전자재료학회논문지
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• 제24권2호
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• pp.89-94
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• 2011

The cause of the thickness non-uniformity in the large area deposition of $SiO_2$ films by PECVD(Plasma Enhanced Chemical Vapor Deposition) was investigated by the plasma diagnostics. The spatial distribution of the plasma species in the chamber was obtained with DLP(Double Langmuir Probe) and the new-designed probe-type QMS(Quadrupole Mass Spectrometer). From the relationship between the spatial distribution of the plasma species and the depositing rate of the $SiO_2$ films, it was conformed that the non-uniform deposition of $SiO_2$ films was related with the spatial distribution of the oxygen radical density and electron temperature.

• 한국재료학회지
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• 제10권7호
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• pp.489-492
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• 2000

0.5%C-25.0%Cr-1.0%Si(합금1), 0.5%C-5.0%Cr-1.0%Si(합금2) 및 2.0%C-5.0%Cr-1.0%Si(합금3)의 3종류 크롬백주철에 있어서 기지조직 및 탄화물에 분푀도는 Cr 및 Si의 거동을 연구하였다. 15kg 용량의 고주파 유도용해로에 선철, 고철, Fe-Cr, Fe-Si 등을 장입시켜 용해시킨후 슬래그를 제거시키고 $1550^{\circ}C$에서 펩 주형에 주입시킨후 실온까지 냉각시켜 SEM으로 응고조직을 관찰하였으며 EPMA분석을 통하여 Cr 및 Si 의 분포거동을 관찰하였다. 합금1의 경우 초정으로 $\delta$페라이트가 정출후 $\delta$페라이트와 용액의 입계에서 $\delta$페라이트와 $M_7C_3$탄화물이 공정으로 정출하였으며 합금2의 경우 용액에서 초정으로 거의 $\delta$페라이트가 정출된 수 극히 일부분만이 $\delta$페라이트와 $M_7C_3$탄화물의 공정으로 정출하였다. 반면 합금 3의 경우 오스테나이트가 초정으로 정출된 후 오스테나이트와 $M_3C$탄화물이 공정으로 정출하였다. Cr은 주로 $M_7C_3$ 및 $M_3C$탄화물에 , 그리고 Si는 기지조직에 선택적으로 분배되었으며 Cr의 기지조직에 대한 분배계수는 0.56-0.68, 그리고 Si는 1.12-1.28의 범위에 걸쳐있었다. 또한 Cr의 기지조직에 대한 분배계수는 C 함량이 2.0%일때가 0.5%의 경우보다 낮았으며 $M_7C_3$탄화물내의 Cr 함량은 Cr함량이 25.0% 일때가 5.0%의 경우보다 높은값을 나타내었다. 나타내었다.

• 한국환경보건학회지
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• 제39권3호
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• pp.223-229
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• 2013

Objectives: In an effort to examine the distribution of THMs (Trihalomethane) generated from chlorine disinfection by the drinking water treatment plants located on the east coast region of Gangwon-do, this study surveyed the distribution and concentrations of each component of THMs twice per month for 5 years from 2008 to 2012. Fluctuation pattern in the seasonal generation amount was identified. In addition, the correlation between the concentration of organic substances in water and THMs was assessed, along with stability of purified water quality supplied by the water treatment plants on the east coast by analyzing the composition ratio of each component that constitutes THMs and the detection frequency. Method: The research was done on purified water supplied by 29 water treatment plants in 7 cities and counties (Goseong-gun, Sokcho-si, Yangyang-gun, Gangneung-si, Donghae-si, Samcheok-si, Taebaek-si) located in Gangwon-do on the east coast. Water samples were collected twice a month from 2008 to 2012 and were investigate for chloroform, bromodichloromethane (BDCM), dibromochloromethane (DBCM), and bromoform, based on analysis through Purge-Trap (Tekmar 3000) devices using FID-attached GC (HP 6890, Hewlett Packard). Result: THMs concentration detected at Gangneung-si was 0.0086mg/L, Goseong-gun 0.0019mg/L, Donghae-si 0.0099 mg/L, Samcheok-si 0.0016 mg/L, Sokcho-si 0.0057 mg/L, Yangyang-gun 0.0027 mg/L and Taebaek-si 0.0038 mg/L. As the THMs composition rate, chloroform constitutes 51.4% followed bybromodichloromethane 22.3%, bromoform 15.2% and dibromochloromethane 11.1% respectively. Conclusion: Throughout the entire THMs survey areas and period, the maximum concentration was 0.072mg/L, which did not exceed the water quality standards (0.1 mg/L), and the overall average concentration was very low at 0.0044 mg/L.

• 자원리싸이클링
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• 제21권5호
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• pp.65-71
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• 2012

용융 PbO-$SiO_2$계 슬래그와 Bi를 $775{\sim}850^{\circ}C$의 마그네시아 도가니 중에서 평형시켜 Pb와 Bi의 평형분배에 대하여 조사하였다. 분위기 중의 산소분압은 $P_{CO2}/P_{CO}$의 비율을 조정하여 제어하였다. Pb의 분배비인 (%PbO)/[%Pb]는 슬래그 중의 $SiO_2$ 농도가 증가함에 따라 증가하였으며, Bi의 분배비인 ($%Bi_2O_3$)/[%Bi]는 슬래그 중의 $SiO_2$ 농도가 증가함에 따라 감소하였다. 그리고 반응 온도가 높을수록 금속 상중의 Pb 농도는 증가하였다. 이러한 결과는 열역학적으로 예측한 결과와 잘 일치하였다.

• 전자공학회논문지A
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• 제32A권12호
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• pp.122-129
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• 1995

The most important feature of a-Si TFT is dense localized states such as dangling bonds which exist in tis bandgap. Electrons trapped by localized states dominate the potential distribution in the active a-Si region ,and influence the performance of a-Si TFT. In this paper, we describe the electrical characteristics of a-Si TFT with respect to trap distribution within bandgap, electron mobility and interface states using 2-Dimensional device simulator and compare the result of simulation with measurements. Using the mixed-mode simulator, we can predict the potential variation of pixel which causes residual image problem during the turn-off of a-Si TFT driving circuit. Therefore it is possible to consider trade-off between potential variation of pixel and turn-on current of a-Si TFT for the optimized driving circuit.

• 한국세라믹학회지
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• 제46권5호
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• pp.472-477
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• 2009

Monodisperse spherical $SiO_2$ particles of various sizes ($\sim$350 nm and $\sim$800 nm) and size distributions were synthesized from TEOS and MTMS. The particle size and size distribution were controlled by changing the volume ratio of water to ethanol and the reaction temperature. Narrow-sized $SiO_2$ particles with $\sim$3% size distribution were obtained. Self-assembly of the $SiO_2$ particles for photonic crystals were performed by the solvent evaporation method. The number of ordered $SiO_2$ layers can be controlled by changing the amount of the dispersed $SiO_2$ volume fraction in the solvent.

• 환경위생공학
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• 제24권3호
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• pp.55-61
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• 2009

Fe-V is used as raw material of vanadium in the steel making process. The purpose of this study, Fe-V is to replace the $VO_{4}$. So the distribution behavior of vanadium in $VO_{4}$ of the steel investigated. The distribution ratio of the vanadium where potential of the free oxygen ion will increase in slag decreased. When CaO and MgO content which is a basic oxide from CaO-$SiO_2$-FetO-MgOsatd. slag increases, S distribution ratio increases. CaO-$SiO_2$-FetO-MgOsatd. slag better than CaO-$SiO_2$-$Al_2O_3$-MgO slag is the recovery of vanadum and desulfurization.

• 대한기계학회논문집
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• 제18권1호
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• pp.101-112
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• 1994

The measurement of residual stress distribution of $Si_3N_4/SUS304$ joint was performed on 23 specimens with the same joint condition using PSPC type X-ray stress measurement system and the two-dimensional elastoplastic analysis using finite element method was also attempted. As results, residual stress distribution near the interface on the ceramic side of the joint was revealed quantitatively. Residual stress on the ceramic side of the joint was turned out to be tensional near the interface, maximum along the edge, varying in accordance with the condition of the joint and variance to be most conspicuous for the residual stress normal to the interface characterized by the stress singularities. In the vicinity of the interface, the high stress concentration occurs and residual stress distributes three-dimensionally. Therefore, the measured stress distribution differed remarkably from the result of the two-dimensional finite-element analysis. Especially at the center of the specimen near the interface, the residual stress, $\sigma_{x}$ obtained from the finite element analysis was compressive, whereas measurement using X-ray yielded tensile $\sigma_{x}$. Here we discuss two dimensional superposition model the discrepancy between the results from the two dimensional finite element analysis and X-ray measurement.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2004년도 하계종합학술대회 논문집(2)
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• pp.485-488
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• 2004

As scaling down the cell channel length, the increment of B concentration in channel region is inevitable to overcome the punch-through, especially in flash memory cell with 90nm technology. This paper shows that the high dose ion implantation in channel cause the Si defect. which has been proved to be the major cause of the tailed Vth in distribution. And also mechanical stress due to SiN-anneal process can induce the Si dislocation. and get worse it. With decreasing the channel implantation dose, skipping the anneal and reducing the mechanical stress, Si defect problem is solved completely. We are verify first that the optimization of B concentration in channel must be certainly considered in order to improve Si defect. It is also certainly necessary to stabilize the distribution of cell Vth in the next generation of flash memory.

• Journal of Welding and Joining
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• 제27권6호
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• pp.62-67
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• 2009

Friction stir welding (FSW) was carried out for Al-Mg-Si series aluminum alloys which are being used for automotive body structure. Consequently, Post weld heat treatment (PWHT) was applied to the friction stir welds to evaluate the effect of the paint baking process which is one of the automotive fabrication process on friction stir welded zone (FSWZ) in 443K for 1.2Ks. Grain structure and its crystal orientation distribution was measured about both the as welded specimens and the post weld heat treated specimens. An optical microscope (OM) and an field emission scanning electron microscope (FE-SEM) was used for observing the grain structure and measuring its crystal orientation distribution, respectively. Changes on the grain structure and its crystal orientation distribution were not detected. From the present results, it was confirmed that the paint baking process after FSW do not affect on the grain structure and its crystal orientation distribution of FSWZ. The comprehensive investigations will be performed for various automotive aluminum alloys manufactured by different processes, in the future.