• Transactions of Materials Processing
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• v.24 no.1
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• pp.44-51
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• 2015

The current study seeks to examine the effects of V and C additions on the mechanical and low thermal expansion properties of a high strength invar base alloy. The base alloy (Fe-36%Ni-0.9%Co-2.75%Mo-0.7Cr-0.23Mn-0.17Si-0.3%C, wt.%) contains $Mo_2C$ carbides, which form as the main precipitate. In contrast, alloys with additions of 0.4%V+0.3%C (alloy A) or 0.4%V+0.45%C (alloy B) contain $Mo_2C$+[V, Mo]C carbides. The average thermal expansion coefficients of these high strength invar based alloys were measured in the range of $5.16{\sim}5.43{\mu}m/m{\cdot}^{\circ}C$ for temperatures of $15{\sim}230^{\circ}C$. Moreover, alloy B showed lower thermal expansion coefficient than the other alloys in this temperature range. For the mechanical properties, the [V, Mo]C improved hardness and strengths(Y.S. and T.S.) of the high strength invar base alloy. T.S.(tensile strength) and Y.S.(yield strength) of hot forged alloy B specimen were measured at 844.6MPa and 518.0MPa, respectively. The tensile fractography of alloy B exhibited a ductile transgranular fracture mode and voids were initiated between the [V, Mo]C particles and the matrix. Superior properties of high strength and low thermal expansion coefficient can be obtained by [V, Mo]C precipitation in alloy B with the addition of 0.4%V and 0.45%C.

• Journal of the Korean Ceramic Society
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• v.52 no.6
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• pp.462-466
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• 2015

This paper reports the microstructure of hot-pressed $ZrB_2$-SiC ceramics with added $B_4C$ as characterized by transmission electron microscopy. $ZrB_2$ has a melting point of $3245^{\circ}C$, a relatively low density of $6.1g/cm^3$, and specific mechanical properties at an elevated temperature, making it a candidate for application to environments with ultra-high temperatures which exceed $2000^{\circ}C$. Due to the non-sinterability of $ZrB_2$-based ceramics, research on sintering aids such as $B_4C$ or $MoSi_2$ has become prominent recently. From TEM investigations, an amorphous layer with contaminant oxide is observed in the vicinity of $B_4C$ grains remaining in hot-pressed $ZrB_2$-SiC ceramics with $B_4C$ as an additive. The effect of a $B_4C$ addition on the microstructure of this system is also discussed.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.1024-1026
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• 2004

We have developed the five mask $PMOS^1$ and the six mask CMOS process architecture for poly-Si TFT. In order to have a competitive process with that for a-Si TFT, the simple co-planar electrode structure whose data line electrode and pixel electrode are on the same plane was adopted. In addition, RGB + White four color $technology^2$ were applied to achieve high aperture ratio and transmittance. Using the aforementioned process architecture and four color technology, 2.0 inch qCIF transmissive micro-reflectance (TMR) device was successfully fabricated.

• Publications of The Korean Astronomical Society
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• v.30 no.2
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• pp.687-690
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• 2015

For research and development of Silicon Carbide (SiC) mirrors, the Korea Astronomy and Space Science Institute (KASI) and National Optical Astronomy Observatory (NOAO) have agreed to cooperate and share on polishing and measuring facilities, experience and human resources for two years (2014-2015). The main goals of the SiC mirror polishing are to achieve optical surface figures of less than 20 nm rms and optical surface roughness of less than 2 nm rms. In addition, Green Optics Co., Ltd (GO) has been interested in the SiC polishing and joined the partnership with KASI. KASI will be involved in the development of the SiC polishing and the optical surface measurement using three different kinds of SiC materials and manufacturing processes (POCO$^{TM}$, CoorsTek$^{TM}$ and SSG$^{TM}$ corporations) provided by NOAO. GO will polish the SiC substrate within requirements. Additionally, the requirements of the optical surface imperfections are given as: less than 40 um scratch and 500 um dig. In this paper, we introduce the international collaboration and interim results for SiC mirror polishing and development.

• Applied Microscopy
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• v.36 no.spc1
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• pp.47-56
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• 2006

Improvements are made to existing primitive cell volume measurement method to provide a real-time analysis capability for the phase analysis of nanocrystalline materials. Simplification is introduced in the primitive cell volume calculation leading to fast and reliable method for nano-phase identification and is applied to the phase analysis of Mo-Si-N nanocoating layer. In addition, comparison is made between real-time and film measurements for their accuracy of calculated primitive cell volume values and factors governing the accuracy of the method are determined. About 5% accuracy in primitive cell determination is obtained from camera length calibration and this technique is used to investigate the cell volume variation in WC-TiC core-shell microstructure. In addition to chemical compositional variation in core-shell type structure, primitive cell volume variation reveals additional information on lattice coherency strain across the interface.

• Korean Journal of Materials Research
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• v.24 no.9
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• pp.443-450
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• 2014

Amorphous (a-Si) films were epitaxially crystallized on a very thin large-grained poly-Si seed layer by a silicide-enhanced rapid thermal annealing (SERTA) process. The poly-Si seed layer contained a small amount of nickel silicide which can enhance crystallization of the upper layer of the a-Si film at lower temperature. A 5-nm thick poly-Si seed layer was then prepared by the crystallization of an a-Si film using the vapor-induced crystallization process in a $NiCl_2$ environment. After removing surface oxide on the seed layer, a 45-nm thick a-Si film was deposited on the poly-Si seed layer by hot-wire chemical vapor deposition at $200^{\circ}C$. The epitaxial crystallization of the top a-Si layer was performed by the rapid thermal annealing (RTA) process at $730^{\circ}C$ for 5 min in Ar as an ambient atmosphere. Considering the needle-like grains as well as the crystallization temperature of the top layer as produced by the SERTA process, it was thought that the top a-Si layer was epitaxially crystallized with the help of $NiSi_2$ precipitates that originated from the poly-Si seed layer. The crystallinity of the SERTA processed poly-Si thin films was better than the other crystallization process, due to the high-temperature RTA process. The Ni concentration in the poly-Si film fabricated by the SERTA process was reduced to $1{\times}10^{18}cm^{-3}$. The maximum field-effect mobility and substrate swing of the p-channel poly-Si thin-film transistors (TFTs) using the poly-Si film prepared by the SERTA process were $85cm^2/V{\cdot}s$ and 1.23 V/decade at $V_{ds}=-3V$, respectively. The off current was little increased under reverse bias from $1.0{\times}10^{-11}$ A. Our results showed that the SERTA process is a promising technology for high quality poly-Si film, which enables the fabrication of high mobility TFTs. In addition, it is expected that poly-Si TFTs with low leakage current can be fabricated with more precise experiments.

• Korean Journal of Materials Research
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• v.8 no.10
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• pp.969-974
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• 1998

The effect of vanadium, which is known to decrease the stacking fault energy of Fe-base alloys, on the microstructure and elevated temperature sliding wear resistance of Fe-20Cr- 1.7C- 1Si alloy was investigated. The maximum amount of vanadium maintaining the austenitic matrix seems to be about 3wt.% in Fe-20Cr- 1.7C-1Si-xV (x = 0, 1, 3, 6. lOwt.%) alloys and the austenitic alloys showed better wear resistance than ferritic alloys. It was considered to be due to the low stacking fault energy and $\gamma->\alpha$ strain-induced phase transformation at rmm temperature. It was shown from elevated temperature sliding tests up to .$225^{\circ}C$ that the addition of vanadium increases the temperature, at which the transition from oxidative wear to adhesive wear occur, and the amount of d formed at $225^{\circ}C$. Thus, it was considered that the addition of vanadium improves the elevated temperature sliding wear resistance of Fe-20Cr- 1.7C - 1Si by reducing the increasing rate of stacking fault energy with temperature and by increasing Ma temperature.

• Clean Technology
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• v.16 no.3
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• pp.220-228
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• 2010

Four Keggin-type heteropolyacids, $H_nXM_{12}O_{40}$(X = P and Si, M = W and Mo) that were substituted with heteroatom and polyatom were applied to the dehydration reaction of fructose to 5-hydroxymethylfurfural (HMF). The results showed that the acid became stronger when the heteroatom and polyatom were substituted with P and W than the cases of Si and Mo, respectively. However, the amount of acidic sites increased with the decrease in the acid strength, resulting in the change of the catalytic activity of heteropolyacids in the dehydration reaction. The experimental results revealed that four different heteropolyacids produced similar amounts of HMF via the dehydration reaction of fructose due to the counterbalancing effect between the amount of active sites, which is related to the catalytic activity of heteropolyacids, and the softness of polyanion. In addition, it was observed that the prepared heteropolyacids showed good structural stability after heat treatment at $200^{\circ}C$.

• Korean Journal of Materials Research
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• v.11 no.7
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• pp.569-574
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• 2001

The crystal structure, surface morphology and preferred orientation of the copper electrodeposit were investigated by the using sulfate bath with $SiO_2$suspensions and the cathode substrate Au sputtered. As by the addition of colloidal silica in copper electrolytic bath and Au pre-coating on substrate, the crystal particles of deposits was fined-down, made uniform and the account of particles were increased. Hardness of copper electrodeposits with colloidal silica increased about 15% in comparison with that of pure copper deposit film and (111), (200) and (311) plane of X-ray diffraction patterns were almost swept away, so preferred orientation of the copper deposits changed from (111) to (110) plane by codeposit $SiO_2$ and precoating the substrate.

• Journal of the Korean Electrochemical Society
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• v.27 no.3
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• pp.97-104
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• 2024

The electrodes of commercialized lithium secondary batteries are manufactured through a wet coating process, and the drying process (DC) is a very important factor as to electrode production speed and process cost. In this study, silicon anodes were manufactured under high-temperature (180 ℃) and low-temperature (50 ℃) DC to investigate the quality and the electrochemical performance of Si-electrodes according to DC. High-temperature DC can quickly evaporate the solvent in the Si-electrode slurry, improving the electrode production rate. However, this also causes the electrode composite to peel off from the current collector. As a result, the Si-electrode's adhesion weakened, and the electrode coating's quality deteriorated. In addition, the Si-electrode manufactured under high-temperature was found to have a thicker composite material than the Si-electrode manufactured under low-temperature. Si-electrodes manufactured under high-temperature had higher sheet resistance and lower electrical conductivity than those manufactured under low-temperature. Consequently, the Si-electrode manufactured under low-temperature showed 152.5% superior cycle performance compared to the Si-electrode manufactured under high-temperature. (Discharge capacities of Si-electrodes manufactured under high-temperature and low-temperature DC were 844 and 1287 mAh g^-1, respectively, after 300 cycles). Establishing the DC of Si-electrodes can easily provide new perspectives to improve the quality and stability of Si-electrodes.