• 전기의세계
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• 제22권2호
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• pp.11-18
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• 1973

This paper reports some results of Si and SiO$_{2}$ films obtained from the expitaxial growth by hydrogen reduction of SiCI$_{4}$ with a hydrogen and carbon dioxide mixture in an epitaxial-deposition chamber. The deposited Si and SiO$_{2}$ are studied by observing the process parameters affecting the rate of deposition, and the quantitative properties at the interface of Si and SiO$_{2}$ are also considered briefly according to the results of the optical absorption and the voltage-current characteristic of MOS etc. using step etching procedure for oxide films.

• Bulletin of the Korean Chemical Society
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• 제18권8호
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• pp.886-889
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• 1997

The crystal structure and optical properties of copper nanoparticles, prepared in fused silica by ion-implantation and subsequent heat-treatment, were characterized by X-ray, TEM, linear absorption, and degenerate four-wave mixing (DFWM) technique. The X-ray data show fcc lattice structure of the nanocrystals and their size was measured as 8-20 nanometer by high resolution TEM. Using DFWM, the third-order nonlinear optical coefficient of the Cu-SiO2 thin films was measured as 0.4-1.1×10-8 esu in the surface plasmon resonance absorption region (540-570 nm).

• 한국전기전자재료학회논문지
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• 제22권12호
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• pp.1058-1062
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• 2009

For the investigation of the mechanism of photoelectric characteristics of a hydrogenated amorphous silicon thin film transistor(a-Si:H TFT), spectral characteristics of various backlights were analyzed in terms of the photon energy at each wavelength. Photon energy spectral characteristics were obtained through the multiplication of each photon energy and spectral intensities of backlights at each wavelength and the total photon energies were obtained by the integration of the photon energy spectrums. From the comparison of the experimental photo leakage current and the calculated photon energy, it was possible to conclude that the absorption of illuminated backlight to a-Si:H layer and the generation of electrons and holes are mainly carried out at the wavelength less than 500 nm as described in previous reports.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제55권5호
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• pp.272-277
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• 2006

The present study is devoted to investigate numerically the optical characteristics of multi-layer thin film structures such as $Si/SiO_2\;and\;Ge/Si/SiO_2$ by using the characteristics transmission matrix method. The reflectivity and the absorptivity rate for thin film structures are estimated for different incident angles of rays and various film thicknesses. In addition, the influence of wavelength on optical characteristics related to complex refractive index is examined. It is found that such wave-like characteristics are observed in predicting reflectivities and depends mainly on film thickness. Moreover, the present study predicts the film thickness for ignoring wave interference effects, and it also discusses the fundamental physics behind optical and energy absorption characteristics appearing in multi-layer thin film structures.

• 대한전기학회논문지
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• 제41권5호
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• pp.483-491
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• 1992

Plasma silicon oxynitride film has been applied as a final passivation layer for semiconductor devices, because it has high resistance to humidity and prevents from alkali ion's penetration, and has low film stress. Structure properties of plasma silicon oxynitride film have been studied experimentally by the use of FT-IR, AES, stress gauge and ellipsometry. In this experiment,Si-N bonds increase as NS12TO/(NS12TO+NHS13T) gas ratio increases. Peaks of Si-N bond, Si-H bond and N-H bond were shifted to high wavenumber according to NS12TO/(NS12TO+NHS13T) gas ratio increase. Absorption peaks of Si-H bond were decreased by furnace anneal at 90$0^{\circ}C$. The atomic composition of film represents that oxygen atoms increase as NS12TO/(NS12TO+NHS13T) gas ratio increases, to the contrary, nitrogen atoms decrease.

• E2M - 전기 전자와 첨단 소재
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• 제10권6호
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• pp.570-575
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• 1997

In this days, the thinner film of dielectric materials is required while its capacitance is required to be still large at the VLSI process. Most of such VLSI have MOS structures. For the research on this requirement, MOS capacitors were fabricated on the silicon wafer in four different thickness groups by RF sputtering method. SiO of the SiO/TiN film is used as the insulating layer and TiN is chosen as the barrier against the diffusion of Al which is the terminal connected by ohmic contact because TiN has the advantageous properties such as good thermal stability and very low diffusion rate in spite of its relatively low specific resistance. In this study their electrical and optical characteristics are investigated to find refractive index, absorption coefficient and Permittivity.

• Journal of the Optical Society of Korea
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• 제3권1호
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• pp.27-31
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• 1999

The two-photon absorption of a SiC photodiode was utilized to obtain autocorrelation signals of the pulses from a mode-locked Rh6G dye laser. The autocorrelation signals were in good agreement with those obtained by a conventional autocorrelator using a second harmonic crystal and photomultiplier tube. The sensitivity of the autocorrelator with the SiC photodiode was about $4{\times}10^3 {(mW)}^2$ . From these results it was demonstrated that the SiC photodiode is suitable as a nonlinear device for an autocorrelation measurement in the visible range.

• 한국재료학회:학술대회논문집
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• 한국재료학회 1996년도 재료학회 춘계학술발표회
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• pp.15-15
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• 1996

• 한국분말재료학회지
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• 제16권4호
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• pp.291-295
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• 2009

The electromagnetic wave absorption sheets were fabricated by mixing of $Fe_{73}Si_{16}B_7Nb_3Cu_1$ nanocrystalline soft magnetic powder, charcoal powder and polymer based binder. The complex permittivity, complex permeability, and scattering parameter have been measured using a network analyzer in the frequency range of 10 MHz$\sim$10 GHz. The results showed that complex permittivity of sheets was largely dependent on the frequency and the amount of charcoal powder : The permittivity was improved up to 100 MHz, however the value was decreased above 1 GHz. The power loss of electromagnetic wave absorption data showed almost the same tendency as the results of complex permittivity. However, the complex permeability was not largely affected by the frequency, and the values were decreased with the addition of charcoal powder. Based on the results, it can be summarized that the addition of charcoal powder was very effective to improve the EM wave absorption in the frequency range of 10 MHz$\sim$1 GHz.

• 한국광학회지
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• 제10권1호
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• pp.80-86
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• 1999

비등상성 반도체 양자우물에서의 자유전자 흡수에 의한 광자의 흡수계수를 모델링하였다. Intravalley scattering과 interalley scattering에 의한 자유전자 흡수가 모두 고려되었고 양자우물내의 각각의 부밴드가 광자의 흡수에 기여하는 정도도 따로 계산되었다. 또한 이 모델의 타당성을 검증하기 위해, Si에 $\delta$-도핑을 이용하여 형성한 얀자우물에 대하여 시물레이션을 수행하고 문헌의 실현결과와 비교하여 그 적절성을 보였다.