• Korean Journal of Crystallography
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• v.12 no.4
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• pp.233-238
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• 2001

X-ray microdiffraction which uses x-ray beam focused down to a micron size from synchrotron radiation sources allow precision measurements of local orientation and strain variations in polycrystalline materials. Using x-ray microdiffraction setup at Pohang Light Source, we investigated the tex-ture of Cu interconnects with various widths on Si wafer by collecting Laue images and focused to about 2×3㎛ ² in size. Our results show that 1㎛ wide Cu interconnect had grains in rather ran- dom orientation. On the other hand the 20㎛ wide interconnects showed a 〈111〉fiber texture near the center. The grains were 2∼5㎛ long at the 1㎛ wide interconnect and 6∼8㎛ in size at the 20㎛ wide interconnect.

• Journal of the Microelectronics and Packaging Society
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• v.21 no.3
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• pp.63-66
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• 2014

In this study, we investigated the effects of Cu TSV on the thermal management of 3D stacked IC. Combination of backside point-heating and IR microscopic measurement of the front-side temperature showed evolution of hot spots in thin Si wafers, implying 3D stacked IC is vulnerable to thermal interference between stacked layers. Cu TSV was found to be an effective heat path, resulting in larger high temperature area in TSV wafer than bare Si wafer, and could be used as an efficient thermal via in the thermal management of 3D stacked IC.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.56 no.2
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• pp.349-354
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• 2007

In this work, we investigated etching characteristics of $HfO_2$ thin film and Si using inductive coupled plasma(ICP) system. The ion energy distribution functions in an ICP system was analyzed by quadrupole mass spectrometer(QMS) with an electrostatic ion energy analyzer. The maximum etch rate of $HfO_2$ thin film is 85.5 nm/min at a $BCl_3/(BCl_3+Ar)$ of 20 % and decreased with further addition of $BCl_3$ gas. From the QMS measurements, the most dominant positive ion energy distributions(IEDS) showed a maximum at 20 % of $BCl_3$. These tendency was very similar to the etch characteristics. This result agreed with the universal energy dependency of ion enhanced chemical etching yields. And the maximum selectivity of $HfO_2$ over Si is 3.05 at a $O_2$ addition of 2 sccm into the $BCl_3/(BCl_3+Ar)$ of 20 % plasma.

• Journal of Korea Foundry Society
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• v.28 no.5
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• pp.226-230
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• 2008

본 논문에서는 공정조성 부근의 Al-Si 합금의 미세구조에 미치는 전자기교반(EMS)의 영향에 대하여 연구하였다. 초정 a 상의 형상에 미치는 전자기교반의 세기의 영향을 조사하기 위하여 각각 교반장치에 60, 80,및 120V의 전압을 가하여 미세조직을 관찰하였다. 60V 이하의 전압이 인가되었을 때 전자기교반의 효과가 나타나지 않은 반면에, 80V 이상의 전압으로 5초 이상 인가되었을 때 구상화된 초정 a 상을 얻을 수 있었다. 인가된 전압이 120V일 때 초정 a 상은 보다 균일한 분포를 가지며 구상화 되었다. 전자기교반의 세기와 함께 교반시간의 영향을 확인하기 위하여 교반시간을 증가시키면서 미세조직을 관찰하였다. 또한 초정 a 상의 형상에 미치는 주조변수의 영향에 대해서도 실험하였다.

• Analytical Science and Technology
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• v.13 no.2
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• pp.215-221
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• 2000

Analysis of fly ashes from the MSW incinerators was carried out using XRF, ICP-MS and ICP-AES. It was found that the major elements of fly ash were Ca, K, Na, Si, Al, S, Cl and O by the XRF analysis. The XRD spectra showed that the fly ashes were mainly consisted with the chlorides, hydroxides, carbonates and also oxides of former elements. For the determination of minor elements such as Zn, Pb, Cu, Cr, and Cd, we used ICP-AES and ICP-MS after microwave digestion and the results were compared with the result of XRF.

• Journal of the Korean Vacuum Society
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• v.22 no.2
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• pp.105-110
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• 2013

Single crystalline $In_xGa_{1-x}As$ nanowires are grown on Si (111) substrate via Vapor-Liquid-Solid growth mode using metal-organic chemical vapor deposition. The ternary nanowires have been grown with various growth conditions and examined by electron microscopy. The alloy compositions of the nanowires has been investigated using Energy-dispersive X-ray spectroscopy. We have found that the composition gradient of the nanowire becomes larger with growth temperature and V/III ratio.

• Korean Journal of Materials Research
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• v.8 no.6
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• pp.551-559
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• 1998

장경비가 큰 탄화규소를 탄소와 규소간의 고온연소반응으로 제조하기 위하여 공정변수에 따른 연소거동과 미세조직의 변화를 조사하였다. 연소합성된 생성물은 주로 $\beta$-SiC이며 연소반응이 충분히 진행되지 못하였을 경우에는 미량의 잔류 반응물과 $\alpha$-SiC가 관찰되었다. 생성된 탄화규소의 평균입도는 약 5$\mu\textrm{m}$로 작았으며, $1300^{\circ}C$ 이상의 예열 조건에서 장경비가 30이상인 탄화규소를 합성할 수 있었다. 압분 강도가 69MPa인 분말의 성형체에서 평균 연소 온도와 평균 전파 속도는 각각 약 $1425^{\circ}C$와 2.1mm/sec 범위이며, 연소 온도는 흑연 분말을 사용하였을 경우가 탄소 섬유를 사용한 경우보다 약 $10^{\circ}C$ 높았다. 연소 반응을 임의로 중단시킨 시편의 계면을 EDX와 Auger 전자 현미경으로 분석한 결과 상호 확산층이 관찰되지 않았다. 이는 탄화규조의 연소합성이 용해-석출 모델에 의하여 진행됨을 시사한다. 예열 온도에 따른 연소 반응 중의 온도 분포를 유한 요소법으로 해석함으로써 $2500^{\circ}C$의 초기 연소 개시 온도에 대하여 예열 온도 $300^{\circ}C$에서는 연소파가 거의 전파할 수 없으며 예열 온도가 $1300^{\circ}C$에서는 시료 내부에 자체 전파가 가능한 $2000^{\circ}C$이상의 온도 구역이 존재함을 알았다.

• Korean Journal of Plant Taxonomy
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• v.38 no.1
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• pp.63-68
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• 2008

We report a taxon of the unrecorded genus Knorringia (Polygonaceae) from Baengryeongdo, Ongin-gun, Incheon-si in the Korean peninsula. This taxon is K. sibirica (Laxm.) Tzvelev subsp. sibirica., has been known from Siberia, Mongolia and China. The new Korean name, 'Si-be-ri-a-yeo-kkwi', was given considering the species epithet and the type locality, Siberia. Description, illustration and photograph showing habitat were given.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.10
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• pp.822-827
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• 2000

The Si-SiO$_2$interface trap and nitride bulk trap distribution of SONOSFET(polysilicon-oxide-nitride-oxide-semiconductor field effect transistor) NVSM (nonvolatile semiconductor memory) cell is investigated by single junction charge pumping method. The device was fabricated by 0.35㎛ standard logic fabrication process including the ONO stack dielectrics. The thickness of ONO dielectricis are 24$\AA$ for tunnel oxide, 74 $\AA$ for nitride and 25 $\AA$ for blocking oxide, respectively. By the use of single junction charge pumping method, the lateral profiles of both interface and memory traps can be calculated directly from experimental charge pumping results without complex numerical simulation. The interface traps were almost uniformly distributed over the whole channel region and its maximum value was 7.97$\times$10$\^$10/㎠. The memory traps were uniformly distributed in the nitride layer and its maximum value was 1.04$\times$10$\^$19/㎤. The degradation characteristics of SONOSFET with write/erase cycling also were investigated.

• Proceedings of the KIEE Conference
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• 2006.10a
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• pp.117-118
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• 2006

In this work, we investigated etching characteristics of $HfO_2$ thin film and Si using inductive coupled plasma (ICP) system. The ion energy distribution functions in an inductively coupled plasma was analyzed by quadrupole mass spectrometer with an electrostatic ion energy analyzer. The maximum etch rate of $HfO_2$ is 85.5 nm/min at a $BCl_3/(BCl_3+Ar)$ of 20% and decreased with further addition of $BCl_3$ gas. From the QMS measurements, the most dominant positive ion energy distributions (IEDs) showed a maximum at 20 % of $BCl_3$. These tendency was very similar to the etch characteristics. This result agreed with the universal energy dependency of ion enhanced chemical etching yields. And the maximum selectivity of $HfO_2$ over Si is 3.05 at a O2 addition of 2 sccm into the $BCl_3/(BCl_3+ Ar)$ of 20% plasma.