• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.113-114
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• 2009

Silicon carbide is one of the most attractive and promising wide band-gap semiconductor material with excellent physical properties and huge potential for electronic applications. Up to now, the most successful method for growth of large SiC crystals with high quality is the physical vapor transport (PVT) method [1, 2]. Since further reduction of defect densities in larger crystal are needed for the true implementation of SiC devices, many researchers are focusing to improve the quality of SiC single crystal through the process modifications for SiC bulk growth or new material implementations [3, 4]. It is well known that for getting high quality SiC crystal, source materials with high purity must be used in PVT method. Among various source materials in PVT method, a SiC powder is considered to take an important role because it would influence on crystal quality of SiC crystal as well as optimum temperature of single crystal growth, the growth rate and doping characteristics. In reality, the effect of powder on SiC crystal could definitely exhibit the complicated correlation. Therefore, the present research was focused to investigate the quality difference of SiC crystal grown by conventional PVT method with using various SiC powders. As shown in Fig. 1, we used three SiC powders with different particles size. The 6H-SiC crystals were grown by conventional PVT process and the SiC seeds and the high purity SiC source materials are placed on opposite side in a sealed graphite crucible which is surrounded by graphite insulation[5, 6]. The bulk SiC crystal was grown at $2300^{\circ}C$ of the growth temperature and 50mbar of an argon pressure. The axial thermal gradient across the SiC crystal during the growth is estimated in the range of $15\sim20^{\circ}C/cm$. The chemical etch in molten KOH maintained at $450^{\circ}C$ for 10 min was used for defect observation with a polarizing microscope in Nomarski mode. Electrical properties of bulk SiC materials were measured by Hall effect using van der Pauw geometry and a UV/VIS spectrophotometer. Fig. 2 shows optical photographs of SiC crystal ingot grown by PVT method and Table 1 shows electrical properties of SiC crystals. The electrical properties as well as crystal quality of SiC crystals were systematically investigated.

• Elastomers and Composites
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• v.52 no.2
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• pp.114-130
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• 2017

Enhancing the properties of rubber, such as the tensile strength, modulus, and wear abrasion, by the addition of carbon black and silica as fillers is very important for improving the performance of rubber products. In this review, we summarize the general features of 'the reinforcement of rubber by fillers' and the equations for representing the reinforcement phenomena. The rubber reinforcement was attributed to enhancement of the following: the rubber, bound rubber, formation of networks, and combination between rubber chains and silica followed by entanglement. The reinforcement capability of silica species with different surface and networked states demonstrated the importance of the connection between the silica particles and the rubber chains in achieving high reinforcement. The model involving combination followed by entanglement can provide a plausible explanation of the reinforcement of rubber by carbon black and silica because the combination facilitates the concentration of rubber chains near the filler particles, and entanglement of the rubber chains around the filler particles enforces the resistance against deformation and breakage of rubber compounds, resulting in high reinforcement.

• Archives of Plastic Surgery
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• v.43 no.1
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• pp.112-114
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• 2016

• Proceedings of the Korean Vacuum Society Conference
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• 2009.08a
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• pp.328-328
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• 2009

• Proceedings of the Korean Vacuum Society Conference
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• 2009.02a
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• pp.222-222
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• 2009

• Electrical & Electronic Materials
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• v.19 no.9
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• pp.28-32
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• 2006

A 7.0-inch transmissive type plastic TFT-LCD was developed at the resolution of 640 $\times$ 3 $\times$ 480 lines (114ppi). All of the processed of TFT, color filter and LC were carried out below $130^{\circ}C$ on PES plastic films. The process conditions of TFT, color filter and LC were optimized for large area TFT-LCD on plastic substrate. The backplane and the color filter was strongly adhered while the panel was bending by using holding spacers.

• Proceedings of the Korean Radioactive Waste Society Conference
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• 2012.10a
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• pp.113-114
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• 2012

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2001.07a
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• pp.114-118
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• 2001

졸-겔법으로 Pt/Ti/$SiO_2$/Si 기판위에 $Bi_{3.7}$/$La_{0.75}$$Ti_3O_{12}$(BLT) 강유전체 박막을 형성하였다. As-coated BLT 박막은 $600^{\circ}C$의 후속 열처리온도에서 결정화 되었으며 전형적인 Bi 층상 페롭스카이트 결정구조를 나타내었다. 또한 후속 열처리온도를 증가함에 따라 결정성이 향상되었다. $700^{\circ}C$의 온도에서 후속 열처리된 BLT 박막의 비 유전상수($\varepsilon_{r}$)와 유전손실($\textrm{tan}\delta$)은 5KHz 주파수에서 약 402와 0.04를 각각 나타내었다 $800^{\circ}C$에서 후속 열처리된 BLT박막의 경우 5V의 인가 전압에서 잔류분극 2Pr($Pr^{+}$-$Pr^{-}$)값은 약 32.5$\mu$C/$Cm^2$을 나타내었다.

• JSTS:Journal of Semiconductor Technology and Science
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• v.3 no.3
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• pp.114-121
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• 2003

Through comparing stress state of TEOS and SiLK-embedded structures, the effect of low-k materials on stress and stress distribution in via-line structures were investigated using three-dimensional finite element analyses. In the case of TEOS-embedded via-line structures, hydrostatic stress was concentrated at the via and the top of the lines, where the void was suspected to nucleate. On the other hand, in the via-line structures integrated with SiLK, large von-Mises stress is maintained at the via, thus deformation of via is expected as the main failure mode. A good correlation between the calculated results and experimentally observed failure modes according to dielectric materials was obtained.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2007.11a
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• pp.114-115
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• 2007

플라즈마 응용화학기상법을 이용하여 Silicon Nitride (SiN) 박막을 증착하였다. PECVD 공정은 Box Wilson 실험계획표를 이용하여 수행하였다. SiN박막의 전하밀도를 신경망과 유전자 알고리즘을 이용하여 모델링하였다. 개발된 모델을 이용하여 전하밀도에의 $N_2$와 $NH_3$의 영향을 다양한 온도에서 고찰하였다. $N_2$ (or $NH_3$)의 증가에 따라 전하밀도는 증가하였으며, 이는 전하밀도의 [N-H]에의 강하게 의존하고 있음을 보인다. 전하밀도는 고온에서의 $NH_3$의 증가, 또는 높은 $NH_3$ 유량에서의 온도의 증가에 따라 급격히 증가하였다. 굴절률 모델과 비교할 때, 이 같은 현상이 [N-H]의 증가에 기인하는 것으로 해석되었다.