• Journal of Animal Science and Technology
• /
• v.53 no.3
• /
• pp.269-274
• /
• 2011

DNA methyltransferases (DNMTs) are closely associated with the epigenetic change and the gene silencing through the regulation of methylation status in animal genome. But, the role of DNMTs in transgene silencing has remained unclear. So, we examined whether the knockdown of DNMT influences the reactivation of transgene expression in the transgenic quails. In this study, we investigated the expression of DNMT3a, and DNMT3b in blastoderm, quail embryonic fibroblasts (QEFs) and limited embryonic tissues such as gonad, kidney, heart and liver of E6 transgenic quails (TQ2) by RT-PCR. We further analyzed the expression of DNMT3a at different stages of whole embryos during early embryonic development by qRT-PCR. DNMT3a expression was detected in all test samples; however, it showed the highest expression in E6 whole embryo. Embryonic fibroblasts collected from TQ2 quails were treated with two DNMT3a-targeted siRNAs (siDNMT3a-51 and siDNMT3a-88) for RNA interference assay, and changes in expression were then analyzed by qRT-PCR. The siDNMT3a-51 and siDNMT3a-88 reduced 53.34% and 64.64% of DNMT3a expression in TQ2 QEFs, respectively. Subsequently the treatment of each siRNA reactivated enhanced green fluorescent protein (EGFP) expression in TQ2 (224% and 114%). Our results might provide a clue for understanding the DNA methylation mechanism responsible for transgenic animal production and stable transgene expression.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2004.08a
• /
• pp.305-308
• /
• 2004

We present a novel process for the ultra low temperature (<150$^{\circ}C$) polycrystalline silicon (ULTPS) TFT for the flexible display applications on the plastic substrate. The sequential lateral solidification (SLS) was used for the crystallization of the amorphous silicon film deposited by rf magnetron sputtering, resulting in high mobility polycrystalline silicon (poly-Si) film. The gate dielectric was composed of thin $SiO_2$ formed by plasma oxidation and $Al_2O_3$ deposited by plasma enhanced atomic layer deposition. The breakdown field of gate dielectric on poly-Si film showed above 6.3 MV/cm. Laser activation reduced the source/drain resistance below 200 ${\Omega}$/ㅁ for n layer and 400 ${\Omega}$/ㅁ for p layer. The fabricated ULTPS TFT shows excellent performance with mobilities of 114 $cm^2$/Vs (nMOS) and 42 $cm^2$/Vs (pMOS), on/off current ratios of 4.20${\times}10^6$ (nMOS) and 5.7${\times}10^5$ (PMOS).

• Journal of the Korean Institute of Telematics and Electronics A
• /
• v.33A no.2
• /
• pp.114-121
• /
• 1996

Thin film Ba$^{0.7}Sr^{0.3}TiO^{3}$ (BST) capacitors were fabricated on SiO$_{2}$/Si substrates by RF magnetron sputtering method and characterized at microwave frequencies ranging from 40 MHz to 1GHz to examine the dielectric dispersion of the capacitors. The BST thin films were electrode material of BST thin films capacitor which is known as one of the best electrode materials for BST films. 50$\AA$-thick titanium (Ti) layers were introduced to increase adhesion between bottom Pt and SiO$_{2}$. The leakage current density of the capacitors was about 1.7${\times}10^{7}A/cm^{2}$ at 1.5V and the dielectric constant was about 140 at 1MHz. Microwave measurement patterns having a coplanar waveguide type were fabricated and their S parameters were measured using network analyzer. After de-embedding parasitic components in microwave measurement patterns nearly frequency-invariant dielectric constant of about 120 was extracted in the measurement range of 40 MHz to 1 GHz.

• Journal of the Korean Society for Precision Engineering
• /
• v.34 no.2
• /
• pp.107-114
• /
• 2017

In this investigation, we describe a metrological technique for surface and thickness profiles of a silicon (Si) wafer by using a 6 degree of freedom (DOF) stitching method. Low coherence scanning interferometry employing near infrared light, partially transparent to a Si wafer, is adopted to simultaneously measure the surface and thickness profiles of the wafer. For the large field of view, a stitching method of the sub-aperture measurement is added to the measurement system; also, 6 DOF parameters, including the lateral positioning errors and the rotational error, are considered. In the experiment, surface profiles of a double-sided polished wafer with a 100 mm diameter were measured with the sub-aperture of an 18 mm diameter at $10\times10$ locations and the surface profiles of both sides were stitched with the sub-aperture maps. As a result, the nominal thickness of the wafer was $483.2{\mu}m$ and the calculated PV values of both surfaces were $16.57{\mu}m$ and $17.12{\mu}m$, respectively.

• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.6 no.1
• /
• pp.109-114
• /
• 2002

In this paper, we have presented the simulation results ah)ut threshold voltage for Si-based MOSFETs with channel length of nano scale. We simulated the Si-based n channel MOSFETs with gate lengths from 180 to 30 nm in accordance to the constant voltage scaling theory and the lateral scaling. These MOSFETs had the lightly doped drain(LDD) structure, which is used for the reduction of electric field magnitude and short channel effects at the drain region. The stronger electric field at this region is due to scaling down. We investigated and analyzed the threshold voltage of these devices. This analysis will provide insight into some applicable limitations at the ICs and used for basis data at VLSI.

• The Journal of Korean Medicine Ophthalmology and Otolaryngology and Dermatology
• /
• v.18 no.3
• /
• pp.114-120
• /
• 2005

Objective: This study was performed to evaluate the effect of Dong-Si acupuncture therapy, on the stroke patients with dysphagia. Method: We studied three selected stroke patients with dysphagia who could follow instructions. The patients were treated with Dong-Si acupuncture (Jokch'eonkeum, Jokokeum) with Dong-Qi therapy for two weeks. We evaluated the effects by AHSA scale, VAS and MBI. Results & conclusion: Dysphagia was improved in all of three cases after treatment. But more clinical & scientific trials are expected to follow this study.

• Journal of the Korean Magnetics Society
• /
• v.20 no.3
• /
• pp.114-119
• /
• 2010

Fe compounds of volcanic rock samples distributed in the seaside area of Ulleung island were investigated by means of X-ray diffractometry (XRD), X-ray fluorescence spectroscopy (XRF) and M$\ddot{o}$ssbauer spectroscopy. We found that samples were typical basic rock which had the total amount of iron compounds including hematite ($\alpha-Fe_2O_3$) varies from 10.6 w% to 14.5 w% depending on the different regions by XRF. The M$\ddot{o}$ssbauer spectra of the samples were consisted of one sextet due to hemitite and doublets due to $Fe^{3+}$ in various clay mineral and $Fe^{2+}$ in pyroxene $(Ca,Fe,Mg)_2(SiO_4)_2$, ilmenite ($FeTiO_3$) and olivine $(Mg,Fe)_2SiO_4$. The balance state of Fe ions of all samples was chiefly $Fe^{3+}$, so we could find that the volcanic rocks distributed in the seaside area of Ulleung island were made in inland.

• Proceedings of the Korean Vacuum Society Conference
• /
• 1999.07a
• /
• pp.114-114
• /
• 1999

Boron nitride (BN)는 매우 뛰어난 물리적, 화학적 성질을 가지고 있는 재료로 많은 연구가 진행되고 있다. hexagonal 형태의 hBN의 경우 큰 전기 저항과 열 전도도를 가지고 있고 열적 안정성을 가지고 있어 반도체 소자에서 절연층으로 쓰일 수 있다. 또한 X-ray와 가시광선을 투과시키기 때문에 X-ray와 가시광선을 투과시키기 때문에 X-ray lithography이 mask 기판으로 사용될 수 있다. Boron-carbon-nitrogen (BCN) 역시 뛰어난 기계적 성질과 투명성을 가지고 있어 보호 코팅이나 X-ray lithography에 이용될 수 있다. 또한 원자 조성이나 구성을 변화시켜 band gap을 조절할 수 있는 가능성을 가지고 있기 때문에 전기, 광소자의 재료로 이용될 수 있다. 본 연구에서는 여러 합성 조건 변화에 따른 hBN 막의 합성 거동을 관찰하고, 카본 농도변화에 따른 BCN 막의 기계적 성질과 구조의 변화, 그리고 실리콘 첨가에 의한 물성 변화를 관찰하였다. BN박막은 실리콘 (100) 기판 위에 r.f. plasma assisted CVD를 이용하여 합성하였다. 합성 압력 0.015 torr, 원료 가스로 BCl3 1.5 sccm, NH3 6sccm을 Ar 15 sccm을 사용하여 기판 bias (-300~-700V)와 합성온도 (상온~50$0^{\circ}C$)를 변화시켜 BN막을 합성하였다. BCN 박막은 상온에서 기판 bias를 -700V로 고정시킨 후 CH4 공급량과 Ar 가스의 첨가 유무를 변화시켜 합성하였다. 또한 SiH4 가스를 이용하여 실리콘을 함유하는 Si-BCN 막을 합성하였다. 합성된 BN 막의 경우, 기판 bias와 합성 온도가 증가할수록 증착속도는 감소하는 경향을 보여 주었다. 기판 bias와 합성온도에 따른 구조 변화를 SEM과 Xray로 분석하였다. 상온에서 합성한 경우는 표면형상이 비정질 형태를 나타내었고, X-ray peak이 거의 관찰되지 않았다. 합성온도가 증가하게 되면 hBN (100) peak이 나타나게 되고 이것은 합성된 막이 turbostratic BN (tBN) 형태를 가지고 있다는 것을 나타낸다. 50$0^{\circ}C$의 합성 온도에서 기판 bias가 -300V에서 hBN (002) peak이 관찰되었고, -500, -700 V에서는 hBN (100) peak만이 관찰되었다. 따라서 고온에서의 큰 ion bombardment는 합성되는 막의 결정성을 저해하는 요소로 작용한다는 것을 확인 할 수 있었다. 합성된 BN 막은 ball on disk type의 tribometer를 이용하여 마모 거동을 관찰한 결과 대부분 1이상의 매우 큰 friction coefficient를 나타내었고, nano-indenter로 측정한 BN막의 hardness는 매우 soft한 막에서부터 10 GPa 정도 까지의 값을 나타내었고, nano-indenter로 측정한 BN 막의 hardness는 매우 soft한 막에서부터 10GPa 정도 까지의 값을 가지며 변하였다. 합성된 BCN, Si-BCN 막은 FT-IR, Raman, S-ray, TEM 분석을 통하여 그 구조와 합성된 상에 관하여 분석하였다. FT-IR 분석을 통해 B-N 결합과 C-N 결합을 확인할 수 있었고, Raman 분석을 통하여 DLC의 특성을 분석하였다. 마모 거동에서는 BCN 막의 경우 0.6~0.8 정도의 friction coefficient를 나타내었고 Si-BCN 막은 0.3이하의 낮은 friction coefficient를 나타내었다. Hardness는 carbon의 함유량과 Ar 가스의 첨가 유무에 따라 각각을 측정하였고 이것은 BN 막 보다 향상된 값을 나타내었다.

• Transactions of the Korean Society of Automotive Engineers
• /
• v.19 no.4
• /
• pp.114-120
• /
• 2011

Fuel reforming technology for the fuel cell vehicles has been frequently applied to internal combustion engine for the reduction of engine out emissions. Since syngas which is reformed from fossil fuel has hydrogen as a major component, it has abilities to enhance the combustion characteristics with wide flammability and high speed flame propagation. In this paper, syngas was feed to a 2.0 liter SI engine with MPI to improve exhaust emissions under cold start and early state of idle condition. Syngas fraction is varied to 0%, 10%, 25%, with various ignition timings. Exhaust emission characteristics and the exhaust system temperature were measured to investigate the effects of syngas addition on cold start. Result showed that HC emission could be dramatically reduced due to the fact that syngas has $H_2$ and no HC as components. The amount of $NO_x$ emission was decreased with the increase of syngas fraction. Because the dilution effect of $N_2$ and the retard of ignition timing reduces the peak combustion temperature inside the cylinder. Exhaust gas temperature was lower than that of gasoline feeding condition. Retarded ignition timing, however, resulted in increased exhaust gas temperature approximated to gasoline condition. It is supposed that the usage of syngas in an SI engine is an effective solution to meet the future strict emission regulations.

• The Transactions of the Korean Institute of Electrical Engineers P
• /
• v.65 no.2
• /
• pp.114-121
• /
• 2016

This paper is Instant space vector PWM(Pulse Width Modulation)power conversion devices in switching power semiconductors from my generation to losses and switching when the voltage surge and current surge of electronic noise(EMI: Electro Magnetic Interference / RFI: Radio Frequency Interference)to effectively minimize the power soft-switching power conversion circuit topologies of auxiliary resonant DC tank for the purpose of high performance realization of the electric power conversion system by the high-speed switching of a semiconductor device(AQRDCT simultaneously : an active auxiliary resonance using auxiliary Quasi-resonant DC tank)DC link snubber switch has adopted a three-phase voltage inverter. AQRDCL proposed in this paper can reduce the effective and current peak stress of the power semiconductors of the auxiliary resonant snubber circuit compared to the conventional active-resonant DC link snubber, it is not necessary to install the clamp switch of the auxiliary resonant DC link, DC the peak current and power loss of the bus line can be reduced.