• Journal of the Korean Vacuum Society
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• v.15 no.1
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• pp.37-44
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• 2006

The homoepitaxy of Si(5 5 12) at $495^{\circ}C$ has been studied by Scanning Tunneling Microscopy under ultrahigh vacuum. A Si-dimer is the basic building-block and preferentially adsorbs on a unique site, that is, the Si-dimer/adatom site at the (337) and the (225) subsections within the Si(5 5 12) unit cell. The Si(5 5 12) unit cell is faceted to $3\times(337)$ subsections filled with Si-addimers and $1\times(113)$ subsection. In this step the tetramer at the other (337) section within the unit cell is transformed to a dimer/adatom site which can accept Si-dimers. Each (337) section is faceted to $1\times(112)\;and\;1\times(113)$, and then finally the unit cell of Si(5 5 12) is faceted to $3\tiems(112)\;and\;4\times(113)$ and forms the facet of effective height, $2.34{\AA}$. In this step, mutual transformation between the honeycomb chain and the dimer/adatom occurs. Finally, the valley between (112) and (113) facets is filled. If once the last step is completed, the uniform and planar Si(5 5 12) terrace is recovered. From the present study, therefore, it can be concluded that the homoepitaxy on Si(5 5 12) is periodically achieved and such growth mode is quite unique since faceting of the substrate-unit-cell plays a critical role for controlling uniformity of the overlayer.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.148-148
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• 2000

지금까지 반도체 표면에 대한 연구는 주로 (1000, (111) 표면 등 낮은 밀러 지표를 가진 표면에 대해 이루어져 왔다. 이에 반해 밀러 지표가 높은 Si 면은 불안정하고, 가열하면 다른 표면, 즉 지표가 낮은 면으로 재배열하는 경향이 있는 것으로 알려져 있는데 아직 이들 높은 밀러 지표를 가진 표면에 대한 연구는 미미한 상태이다. 그러나, Si(113)면은 밀러 지표가 높으면서도 안정하기 때문에 Si(113)의 구조를 정확하게 알 수 있다면 밀러 지표가 낮은 Si 표면이 안정한 이유를 이해할 수 있을 것이다. 따라서 본 연구에서는 TOF-CAICISS 장치(Time of Flight - CoAxial Impact Collision Ion Scattering Spectroscopy) 장비와 RHEED(Reflection High Energy Electron Diffrction)를 이용하여 Si(113) 표면의 구조와 Si(113) 표면의 온도에 따른 구조 변화를 관찰하였다. TOF-CAICISS 실험결과를 보면 (3$\times$2)에서 (3$\times$1)으로 상변환하면서 Si(113) 표면에 오각형을 이루는 dimer 원자들과 adatom 원자들간의 높이차가 작아짐을 알 수 있다. RHEED 실험결과와 전산 모사 결과로부터 상온에서 Si(113)(3$\times$2) 구조를 가지다가 45$0^{\circ}C$~50$0^{\circ}C$에서 Si(113) (3$\times$1) 구조로 상변환한다는 것을 알 수 있다. 그러나, 아직 상전이 메카니즘은 명확하게 밝혀지지 않았다. 실험결과를 전산 모사와 비교함으로써 Si(113) 표면에 [33]방향으로 이온빔을 입사시켰을 경우 dabrowski 모델과 Ranke AI 모델이 적합하지 않다는 것을 알 수 있다./TEX>, shower head의 온도는 $65^{\circ}C$로 설정하였다. 증착된 Cu 박막은 SEM, XRD, AFM를 통해 제작된 박막의 특성을 비교.분석하였다. 초기 plasma 처리를 한 경우에는 그림 1에서와 같이 현저히 증가한 초기 구리 입자들이 관측되었으며, 이는 도상 표면에 활성화된 catalytic site의 증가에 기인한다고 보여진다. 이러한 특성은 Cu films의 성장률을 향상시키고, 또한 voids를 줄여 전기적 성질 및 surface morphology를 향상시키는 것으로 나타났다. 결과 필름의 잔류 응력과 biaxial elastic modulus는 필름의 두께가 감소함에 따라 감소하는 경향을 나타냈으며, 같은 두께의 필름인 경우, 식각 깊이에 따른 biaxial elastic modulus 의 변화를 통해 최적의 식각 깊이를 알 수 있었다.도의 값을 나타내었으며 X-선 회절 data로부터 분석한 박막의 변형은 증온도에 따라 7.2%에서 0.04%로 감소하였고 이 이경향은 유전손실은 감소경향과 일치하였다.는 현저하게 향상되었다. 그 원인은 SB power의 인가에 의해 활성화된 precursor 분자들이 큰 에너지를 가지고 기판에 유입되어 치밀한 박막이 형성되었기 때문으로 사료된다.을수 있었다.보았다.다.다양한 기능을 가진 신소재 제조에 있다. 또한 경제적인 측면에서도 고부가 가치의 제품 개발에 따른 새로운 수요 창출과 수익률 향상, 기존의 기능성 안료를 나노(nano)화하여 나노 입자를 제조, 기존의 기능성 안료에 대한 비용 절감 효과등을 유도 할 수 있다. 역시 기술적인 측면에서도 특수소재 개발에 있어 최적의 나노 입자 제어기술 개발 및 나노입자를 기능성 소재로 사용하여 새로운 제품의 제조와 고압 기상 분사기술의 최적화에 의한 기능성 나노 입자 제조 기술을 확립하고 2차 오염 발생원인 유기계 항균제를 무기계 항균제로 대체할 수 있다.

• Journal of the Korean Vacuum Society
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• v.16 no.2
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• pp.145-152
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• 2007

The evolution dynamics of nanoscale Ge islands on both Si (001) and (113) surfaces is explored using ultraviolet photoelectron emission microscopy (UV-PEEM). Real-time monitoring of the in-situ growth of the Ge island structures can allow us to study the variation of the size, the shape and the density of the nanostructures. For Ge depositions greater than ${\sim}4$ monolayer (ML) with a growth rate of ${\sim}0.4\;ML/min$ at temperatures of $450-550^{\circ}C$, we observed island nucleation on both surfaces indicating the transition from strained layer to island structure. During continuous deposition the circular islands grew larger via ripening processes. AFM measurements showed that the islands grown on Si (001) were dome-shaped while the islands on Si (113) were multiple-side faceted with flat tops of (113)-orientation. In contrast, for Ge deposition with a lower growth rate of ${\sim}0.15\;ML/min$ on Si(113), we observed the shape transition from circular into elongated island structures. The elongated islands grew longer along the [$33\bar{2}$] during continuous Ge deposition. The shape evolution of the islands is discussed in terms of strain relaxation and kinetic effects.

• Proceedings of the Materials Research Society of Korea Conference
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• 2001.05a
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• pp.113-113
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• 2001

• Proceedings of the Materials Research Society of Korea Conference
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• 1996.11a
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• pp.113-113
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• 1996

• Proceedings of the Materials Research Society of Korea Conference
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• 1992.05a
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• pp.113-113
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• 1992

• Proceedings of the Materials Research Society of Korea Conference
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• 2001.11a
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• pp.113-113
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• 2001

• Applied Chemistry for Engineering
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• v.10 no.7
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• pp.963-968
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• 1999

The global environmental problems have been caused by the release of CFCs. Therefore, methods for safe destruction of recoverd CFCs will be eventually needed. The objective of this study was to develop and test a catalyst operating at a mild condition for the decomposition of CFC-113. In this work, catalytic oxidative decomposition of CFC-113 was carried out over aerosol $TiO_2/SiO_2(ATS)$ catalysts prepared by the sol-gel method. All ATS catalysts(Ti/Si mol ratio=1, 2, 2.33, 4) showed high initial activity. However, the deactivation of ATS catalysts was found that more remarkable due to an attack of fluorine and the destruction of ATS structure(Si-F reaction) from analyses of SEM-EDX, XRD than $TiO_2/SiO_2(ATS)$ catalyst prepared by the precipitation method. ATS catalysts prepared by more acidic prehydrolysis condition were found to have still more activity and longer life-time by increasing of acidity. The activity of ATS catalyst also depend on the content of $TiO_2$. There was reason that the acidity of the ATS catalyst was increased with the increased content of $TiO_2$ from 50 to 80 mol %. Solid superacid catalyst ($ATX/SO_4{^{2-}}$) modified with $H_2SO_4$ solution was prepared for high activity and lower deactivation. The reaction of $ATS/SO_4{^{2-}}$ catalyst also exhibited even higher activity and lower deactivation than the original ATS catalyst. It is suggested that the addition of the sulphate species clearly inhibit the deactivation.

• Korean Journal of Materials Research
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• v.18 no.3
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• pp.113-116
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• 2008

A 532 nm Nd-YAG laser was applied to crystallize amorphous Si thin films in order to evaluate the applicability of a Nd-YAG laser to low-temperature polycrystalline Si technology. The irradiation of a green laser was controlled during the crystallization of amorphous Si thin films deposited onto glass substrates in a sophisticated process. Raman spectroscopy and UV-Visible spectrophotometry were employed to quantify the degree of crystallization in the Si thin films in terms of its optical transmission and vibrational characteristics. The effectiveness of the Nd-YAG laser is suggested as a feasible alternative that is capable of crystallizing the amorphous Si thin films.

• Journal of the Korean Vacuum Society
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• v.8 no.3B
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• pp.269-275
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• 1999

The phase transition on the surface which several adsorbates (K, Mg, etc.) are deposited was observed by Low Energy Electron Diffraction (LEED) and Reflection High Energy Electron Diffraction (RGEED). We took the photoelectron spectra from the valence and core level at several oxygen exposure. For oxygen adsorption, the surface state in valence spectra diminished concurrently with S1, S2 peaks in core level spectra and surface periodicity turned to 3$\times$2 by post-annealing. These results suggest that the phase transition from 3$\times$2 to 3$\times$ on the Si(113) at initial stage is induced by a rearrangement of atoms on the substrate, not by the formation of overlayer.