• 한국전기전자재료학회논문지
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• 제22권5호
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• pp.419-424
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• 2009

ZnO films doped with different contents of indium ($0.1{\sim}10$ at.%) were deposited on Si (111) substrate by Pulsed Laser Deposition (PLD). The structural, electrical and optical properties of the films were investigated using XRD, AFM, Hall and PL measurement. Results showed that un-doped ZnO film had (002) plane as the c-axis orientated growth, whereas indium doped ZnO films exhibited the peak of (002) and the weak (101) plane. In addition, in the indium doped ZnO films, the electron concentration is ten times higher than that of un-doped ZnO film, while the resistivity is ten times lower than that of un-doped ZnO film. The indium doped ZnO films have UV emission about 380 nm and show a red shift with increasing contents of indium. The I-V curve of the fabricated diode show the typical diode characteristics and have the turn on voltage of about 2 V.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.390-390
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• 2010

Superconducting proximity effects of Nb/Si(111) were investigated with scanning tunneling microscopy(STM) and scanning tunneling spectroscopy(STS). A highly-doped($0.002\;{\omega}{\diamondsuit}cm$) Si wafer pieces were used as substrate and Nb source was thermally evaporated onto the atomically clean silicon substrate. The temperature of the silicon sample was held at $600^{\circ}C$ during the niobium deposition. And the sample was annealed at $600^{\circ}C$ for 30 minutes additionally. Volmer-Weber growth mode is preferred in Nb/Si(111) at the sample temperature of $600^{\circ}C$. With proper temperature and annealing time, we can obtain Nb islands of lateral size larger than Nb coherence length(~38nm). And outside of the islands, bare Si($7{\times}7$) reconstructed surface is exposed due to the Volmer-Weber Growth mode. STS measurement at 5.6K showed that Nb island have BCS-like superconducting gap of about 2mV around the Fermi level and the critical temperature is calculated to be as low as 6.1K, which is lower than that of bulk niobium, 9.5K. This reduced value of superconducting energy gap indicates suppression of superconductivity in nanostructures. Moreover, the superconducting state is extended out of the Nb island, over to bare Si surface, due to the superconducting proximity effect. Spatially-resolved scanning tunneling spectroscopy(SR-STS) data taken over the inside and outside of the niobium island shows gradually reduced superconducting gap.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.383-383
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• 2010

Gas-phase hydrogen atoms create a variety of chemical and physical phenomena on Si surfaces: adsorption, abstraction of pre-adsorbed H, Si etching, Si amorphization, and penetration into the bulk lattice. Thermal desorption/evolution analyses exhibited three distinct peaks, including one from the crystalline bulk. It was previously found that thermal-energy gaseous H(g) atoms penetrate into the Si(100) crystalline bulk within a narrow substrate temperature window(centered at ~460K) and remain trapped in the bulk lattice before evolving out at a temperature as high as ~900K. Developing and sustaining atomic-scale surface roughness, by H-induced silicon etching, is a prerequisite for H absorption and determines the $T_s$ windows. Issues on the H(g) absorption to be further clarified are: (1) the role of the detailed atomic surface structure, together with other experimental conditions, (2) the particular physical lattice sites occupied by, and (3) the chemical nature of, absorbed H(g) atoms. This work has investigated and compared the thermal H(g) atom absorptivity of Si(100), Si(111) and Si(110) samples in detail by using the temperature programmed desorption mass spectrometry (TPD-MS). Due to the differences in the atomic structures of, and in the facility of creating atom-scale etch pits on, Si(100), (100) and (110) surfaces, the H-absorption efficiency was found to be larger in the order of Si(100) > Si(111) > Si(110) with a relative ratio of 1 : 0.22 : 0.045. This intriguing result was interpreted in terms of the atomic-scale surface roughening and kinetic competition among H(g) adsorption, H(a)-by-H(g) abstraction, $SiH_3(a)$-by-H(g) etching, and H(g) penetraion into the crystalline silicon bulk.

• 한국전기전자재료학회논문지
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• 제11권4호
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• pp.267-273
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• 1998

The band structures of $Si_{1-x}Ge_x$ layers grown on $Si_{1-y}Ge_y$ substrate are calculated using k$\cdot$p and strain Hamiltonians. The hole drift mobilities in the plane direction are then calculated by taking into account the screening effect and the density-of-states of the impurity band. When $Si_{1-x}Ge_x$ is grown on Si substrate, the mobilities of (110) and (111) $Si_{1-x}Ge_x$ layers are larger than that of (001) $Si_{1-x}Ge_x$. However, due to the large defect and surface scattering, (110) and (111) $Si_{1-x}Ge_x$ layers may not be useful for the development of the fast device. Meanwhile, when Si is grown on $Si_{1-y}Ge_y$ substrate, the mobilities of (001) and (110) Si layers are greatly enhanced. Based on the amount of defect and the surface scattering, it is expected that Si grown on (001) $Si_{1-y}Ge_y$ substrate, where the Ge contents is larger than 10%(y>0.1), has the highest mobility.

• 전기전자학회논문지
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• 제26권1호
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• pp.111-118
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• 2022

본 논문에서는 고전압 SiC Power 소자와 집적이 가능한 4H-SiC CMOS에 대해 연구하였다. SiC CMOS 소자 연구를 통해 고출력 SiC Power 소자와 함께 제작을 가능하게 함으로써 SiC 전력소자를 이용하는 고출력 시스템의 효율 및 비용면에서 우수한 성능을 기대할 수 있다. 따라서 4H-SiC 기판에서 CMOS를 설계한 후 TCAD 시뮬레이션을 통해 전기적 특성 및 고온 동작 신뢰성을 비교하였다. 특히 높은 온도에서 신뢰성 있는 동작을 위해 gate dielectric으로 HfO₂를 변경함으로써 SiO₂보다 열적 특성이 개선됨을 확인하였다.

• ETRI Journal
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• 제19권2호
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• pp.71-81
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• 1997

We report on the room-temperature-growth of highly uniform and ultrathin Ag films on Sb-terminated Si(111) surfaces, as evidenced from a scanning tunneling microscopy (STM) study in an UHV system. With predeposition of one monolayer (ML) of Sb, uniform growth of Ag islands was observed at room temperature. The Sb layer suppresses the surface diffusion of Ag atoms on Si surface and increases the Ag island density, and then the increased island density is believed to cause coalescence of Ag islands before the beginning of multilayer growth in higher coverages, resulting in the growth of atomically flat and uniform islands on the Sb surfactant layer.

• KIEE International Transactions on Electrophysics and Applications
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• 제4C권3호
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• pp.111-116
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• 2004

The Ni/SiC Schottky diode was fabricated with the $\alpha$-SiC thin film grown by the ICP-CVD method on a (111) Si wafer. $\alpha$-SiC film has been grown on a carbonized Si layer in which the Si surface was chemically converted to a very thin SiC layer achieved using an ICP-CVD method at $700^{\circ}C$. To reduce defects between the Si and $\alpha$-SiC, the surface of the Si wafer was slightly carbonized. The film characteristics of $\alpha$-SiC were investigated by employing TEM (Transmission Electron Microscopy) and FT-IR (Fourier Transform Infrared Spectroscopy). Sputterd Ni thin film was used as the anode metal. The boundary status of the Ni/SiC contact was investigated by AES (Auger Electron Spectroscopy) as a function of the annealing temperature. It is shown that the ohmic contact could be acquired beyond a 100$0^{\circ}C$ annealing temperature. The forward voltage drop at 100A/cm was I.0V. The breakdown voltage of the Ni/$\alpha$-SiC Schottky diode was 545 V, which is five times larger than the ideal breakdown voltage of the silicon device. As well, the dependence of barrier height on temperature was observed. The barrier height from C- V characteristics was higher than those from I-V.

• 한국응용곤충학회:학술대회논문집
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• 한국응용곤충학회 2004년도 춘계 학술발표회
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• pp.111-111
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• 2004

• 한국진공학회:학술대회논문집
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• 한국진공학회 1999년도 제17회 학술발표회 논문개요집
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• pp.68-68
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• 1999

• 한국재료학회:학술대회논문집
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• 한국재료학회 1998년도 추계학술발표강연 및 논문개요집
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• pp.27-27
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• 1998