• 농촌계획
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• 제3권2호
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• pp.102-111
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• 1997

For rational agricultural land use planning, it is quite necessary to get hold of land suitability precisely and to make decision on land use patterns accordingly. In the methodological viewpoint, objective and scientific evaluation techniques for land suitability classification should be supported for the systematic land use planning. As one of technical development approaches to rational land use planning, this study tried to frame a land suitability evaluation system for agricultural purposes. Evaluation unit is defined as a tract of land bounded by road, other land units and topographical features. And quantification theory was applied in the determination works of evaluation criteria. The administrative area of Namsa-myon(district), Yongin-si(city), Kyunggi-do(province) was selected for the case study. In order to check the feasibility of the evaluation system developed in the study, field check team, consisting of 2 government officers and 2 representative farmers, carried out evaluation works by observation on 148 sample land units, 10% of total 1,480 ones. Between estimated and observed results, there showed very good relationship of its multiple correlation coefficient, R=0.9467.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1992년도 제2회 학술발표회 논문개요집
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• pp.3-10
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• 1992

pphotostimulated desorpption of NO chemisorbed on ppt(001) at 80K has been studied by the (1+1)-resonance-enhanced multipphoton ionization((1+1)-REMppI) technique. A linearly ppolarized ArF excimer laser ( =193 nm, 6.41eV) is used as the ppumpp laser. A high adsorpption rate selectivity was found in the expposure deppendence of the NO desorpption yield. The NO desorpption yield increases drastically when the amount of NO expposure exceeds ~1.8 L. This result shows that the amount of NO sppecies with a large cross section for pphotostimulated desorpption increases drastically at higher NO coverages. Using scanning tunneling microscoppy, we have observed structural modifications of the chlorinated Si(111)-7$\times$7 surface induced by 266nm laser irradiation. At very low laser fluence of 0.7mJ/$\textrm{cm}^2$, at which thermal desorpption can be ignored, a pperiodic stripped ppattern of a single domain is imaged. This ppattern consists of flat terraces and narrow grooves of ~60 and ~10A in width, resppectively.

• Journal of Magnetics
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• 제11권3호
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• pp.147-150
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• 2006

We have fabricated three-dimensional magnetophotonic crystals based on $\alpha$-$SiO_2$ opal films. Opal thin films grown on glass substrates were filled with bismuth substituted iron garnet (Bi:YIG). Scanning electron microscopy data, optical and magnetic properties of the synthesized samples confirm the presence of the Bi:YIG contentin the opal lattice. It is shown that the samples exhibit the (111) stop band, and transmissivity of the threedimensional magnetophotonic crystals is defined by both the film lattice and the Bi:YIG content.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.267-267
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• 2013

Band engineering of a nanowire is related to the question what is the minimum size of a nanowire-based device. At the subnanometer scale, there has been a long standing problem whether it is possible to both control an energy band of an isolated nanowire by a dopant and measure it using angle-resolved photoemission spectroscopy (ARPES). This is because an extra atom in the subnanometer wire plays as a defect rather than a dopant and it is challenging to assemble isolated subnanometer wires into an array for an ARPES measurement. We demonstrate that only one of multiple metallic subnanometer wires canbe controlled electronically by a dopant maintaining the whole metallic bands of other wires, which was observed directly by ARPES. Here,the multiple metallic subnanometer wires were produced on a stepped Si(111) surface by a self-assembly method. The selective band engineering proves that the selectively-controlled metallic wire is nearly isolated electronically from other metallic wires and an electronic structure controlcan be realized down to subnanometer scale.

• 전자공학회논문지A
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• 제33A권4호
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• pp.106-111
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• 1996

Schottky diodes are fabricated on laser annealed and unannealed polysilicon substrate and their electrical characteristics are studied and analyzed. Current of laser annealed devices are larger than that of unannealed devices because of grain growth, decrease of grain boundary and trap density, lowering of grain boundary barrier height, decrease of dopant segregation. At low forward bias (<0.7V), currents of unanealed devices are larger. Soft breakdown voltages of laser annealed devices are larger than that of unannealed devices.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2006년도 하계종합학술대회
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• pp.473-474
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• 2006

Boron Phosphide films were deposited on (111) Si substrate at $650^{\circ}C$, by the reaction of B2H6 with PH3 using APCVD. N2 was carried out as carrier gas. The optimal gas rates were $20\;m{\ell}/min$ for B2H6, $60\;m{\ell}/min$ for PH3 and $1\;{\ell}/min$ for N2. After as grown the films were insitu annealed for 1hour in N2 ambient at $550^{\circ}C$ and measured. The measurement of AFM shows that the RMS is $29.626{\AA}$ for the reaction temperature at $650^{\circ}C$. The measurement of XRD shows that the films have the orientation of (101). Also, the measurement of AES is shown that the films have B13P2 stoichiometry.

• 한국진공학회지
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• 제7권s1호
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• pp.7-14
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• 1998

Details are given of an study of the characteristics of field-induced electron emission from hydrogen-free high $sp^3$ content(>90%) amorphous diamond (a-D) film deposited on heavily doped ($\rho$<0.01 $\Omega\cdot\textrm{cm}$) n-type monocrystalline Si(111) substrate. It is demonstrated that a-D film has excellent electron field emission properties. Emission current can reach 0.9 $\mu$A at applied field as low as 1 V/$\mu\textrm{m}$, and emission current density can be obtained about several mA/$\textrm{cm}^2$. The emission current is stable when the beginning current is at 50 $\mu$A within 72 hours. Uniform fluorescence display of electron emission from whole face of the a-D film under the electric field of 10~20 V/$\mu\textrm{m}$ was also observed. It can be considered that the contribution of excellent electron emission property results from its smooth, uniform, amorphous surface and high $sp^3$ content of the a-D films.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2005년도 제29회 학술발표회 초록집
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• pp.192-192
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• 2005

• 한국세라믹학회지
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• 제48권5호
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• pp.342-347
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• 2011

Nanocrystalline TiN films were deposited on Si(100) substrate using asymmetric pulsed DC reactive magnetron sputtering. We investigated the growing behavior and the structural properties of TiN films with change of duty cycle and pulsed frequency. Grain size of TiN films were decreased from 87.2 nm to 9.8 nm with decrease of duty cycle. The $2{\theta}$ values for (111) and (200) crystallographic planes of the TiN films were also decreased with decrease of duty cycle. This shift in $2{\theta}$ could be attributed to compressive stress in the TiN coatings. Thus, the change of plasma parameter has a strong influence not only on the microstructure but also on the residual stresses of TiN films.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.47-47
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• 2007

Indium oxide conducting films were dep9sited on Si(100) substrates at various temperatures by liquid delivery metal organic chemical vapor deposition using Indium (III) tris (2,2,6,6-tetramethyl-3.5-heptanedionato) $(dpm)_3$ precursors. The films deposited at $200{\sim}400^{\circ}C$ were grown with a (111) preferred orientation and exhibit an increase of grain size from 21 to 33nm with increasing deposition temperature. In the range of deposition temperature, there is no metallic indium phase in deposited films.