• Korean Journal of Materials Research
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• v.4 no.1
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• pp.107-112
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• 1994

The phase transition and the surface and interface morphologies of $TiSi_2$ formed on atomically clean Si substrates are investigated. 200$\AA$ Ti and 400$\AA$ Si films on Si(ll1) have been codeposited at elevated temperatures (400~$800^{\circ}C$) in ultrahigh vacuum. The phase transition of TiSiL is characterized with using XRD. The results distinguish the formation of the C49 and C54 crystalline titanium silicides. The surface and interface morphologies of titanium silicides have been examined with SEM and TEM. A relatively smootb surface is observed for the C49 phase while a rough surface and interface are observed for C54 phase. The islanding of the C54 phase becomes severe at high temperature ($800^{\circ}C$). Islands of TiSiL have been observed at temperatures above $700^{\circ}C$ but no islands are observed at temperatures below $600^{\circ}C$. For films deposited at $400^{\circ}C$ and 500%. weak XRD peaks corresponding to TiSi were observed and TEM micrographs exhibited small crystalline regions of titanium silicide at the interface.

• Korean Journal of Materials Research
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• v.4 no.1
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• pp.9-23
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• 1994

Epitaxial $CoSi_2$ layer has been grown on NaCl(100) substrate at low deposition temperature($200^{\circ}C$) by multitarget bias cosputter deposition(MBCD). The phase sequence and crystallinity of deposited silicide as a function of deposition temperature and substrate bias voltage were studied by X-ray diffraction(XRD) and transmission electron microscopy(TEM) analysis. Crystalline Si was grown at $200^{\circ}C$ by metal induced crystallization(M1C) and self bias effect. In addition to, the MIC was analyzed both theoretically and experimentally. The observed phase sequence was $Co_2Si \to CoSi \to Cosi_2$ and was in good agreement with that predicted by effective heat of formation rule. The phase sequence, the CoSi(l11) preferred orientation, and the crystallinity had stronger dependence on the substrate bias voltage than the deposition temperature due to the collisional cascade mixing, the in-situ cleaning, and the increase in the number of nucleation sites by ion bombardment of growing surface. Grain growth induced by ion bombardment was observed with increasing substrate bias voltage at $200^{\circ}C$ and was interpreted with ion bombardment dissociation model. The parameters of $E_{Ar}\;and \alpha(V_s)$ were chosen to properly quantify the ion bombardment effect on the variation in crystallinty at $200^{\circ}C$ with increasing substrate bias voltage using Langmuir probe.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.7 no.3
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• pp.449-455
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• 1997

The anisotropic etching behavior of single crystal silicon were studied in aqueous KOH solution. N-type (100) oriented single crystal silicon wafers were used for the study, and the $SiO_2$ layer, whose etching rate is known to be much slower than that of silicon in the KOH solution, was used as a mask for the silicon etching. The silicon etching rate and the etching properties are shown to be a function of etchant temperature uniformity, circulation speed, and circulation direction of the etchant as well as the etchant concentration and the temperature. The etching rate is increased as the temperature is increased from $10\mu \textrm{m}/hr$ to $250\mu \textrm{m}/hr$ in the range of $50^{\circ}C~105^{\circ}C$. Hillock density and height is observed to be correlated with the etchant concentration and the etch temperature. The variation of the hillock density was explained by the ratio between the etching rate of (100) orientation and that of (111) orientation.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.3
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• pp.59-65
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• 1999

In this paper, we had studied the possibility of application as Cu thin films from (hfac)Cu(VTMOS) which is very stable. Cu thin films had been studied as a function of deposition temperature. Substrates used in the experiment were PVD TiN on Si wafer. Deposition conditions were as follow : deposition temperature $50^{\circ}C$. Cu thin films were analyzed by AES, four point probe, XRD and SEM. All of deposited films were very pure and some favoring of <111> planes perpendicular to the substrate surface were observed. Cu thin films had two distinct growth rates at various deposition temperature. One is the surface reaction limited region below $200^{\circ}C$, and the other is the mass transport limited region above $200^{\circ}C$. The resistivity of deposited Cu thin films under the optimum deposition condition is $2.5mu\Omega.cm$ Thus, properties of deposited Cu thin films using (hfac)Cu(VTMOS) didn't show difference with Cu thin films from other precursors.

• Journal of the Mineralogical Society of Korea
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• v.30 no.3
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• pp.83-91
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• 2017

In-situ high-pressure and ex-situ high temperature-pressure experiments of natural beryl ($Be_3Al_2Si_6O_{18}$, P6/mcc) from two different localities (beryl-A and beryl-B) were studied using pure water as pressure transmitting medium. Compared to the previous study using a mixture of methanol:ethanol medium in 4 : 1 by volume, pressure- and temperature-induced chemical and structural changes under water medium are expected to be different. The derived bulk moduli are 111(7) GPa, $K{_0}^{\prime}=73(7)$; 110(9) GPa, $K{_0}^{\prime}=65(8)$ for beryl-A and beryl-B, respectively. We observe densifications in volume compression, which appear to be attributed to the phase transitions of water to ICE VI and ICE VII around 1.0 GPa and 2.5 GPa, respectively.

• Journal of the Korean Magnetics Society
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• v.10 no.3
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• pp.118-122
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• 2000

MR characteristics of $Al_2$ $O_3$ based magnetic tunneling juction with various $Al_2$ $O_3$ thicknesses were investigated. Spin-dependent tunneling junctions, in which the tunneling barrier $Al_2$ $O_3$ is formed by depositing a 1-3 nm thick Al layer, followed by thermal oxidation at room temperature in an $O_2$atmosphere, were fabricated on 4$^{\circ}$tilt(111)Si substrate in 3-gun magnetron sputtering system. The top and bottom ferromagnetic electrodes were Ni$_{80}$Fe$_{20}$ and Co. A maximum Tunneling MR ratio of 14% was obtained in the junction of which insulating barrier thickness was 2 nm. By increasing the tunneling voltage across the junction, maximum MR ratio reduced and finally showed no MR characteristics.s.

• Journal of the Korean Magnetics Society
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• v.12 no.2
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• pp.64-67
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• 2002

IrMn pinned spin valve (SV) films with stacks of Ta/NiFe/IrMn/CoFe/Cu/CoFe/NiFe/Ta were prepared by dc sputtering onto thermally oxidized Si (111) substrates at room temperature under a magnetic field of about 100 Oe. The annealing cycle number and temperature dependence of exchange coupling field (H$_{ex}$), magnetoresistance (MR) ratio, and coercivity (H$_{c}$) were investigated. By optimizing the process of deposition and post thermal annealing condition, we obtained the IrMn based SV films with MR ratio of 3.6%, H$_{ex}$ of 1180 Oe for the pinned layer. The H$_{ex}$ is stabilized after the second annealing cycle and it is thought that this SV reveals high thermal stability. The H$_{ex}$ maintained its strength of 600 Oe in operation up to 24$0^{\circ}C$ and decreased monotonically to zero at 27$0^{\circ}C$.

• Journal of the Korean Vacuum Society
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• v.6 no.1
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• pp.28-35
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• 1997

Effects of rapid thermal annealing on the characteristics of Cu films deposited from the (hfac)Cu(VTMS) precursor and on the barrier properties of TiN layers were studied. By the post-annealing, the electrical characteristics of Cu/TiN and the microstructures of Cu films were significantly changed. The properties of Cu films were more sensitive to the annealing temperature than the annealing time. Sheet resistance started to increase above $400^{\circ}C$, and the interreaction between Cu and Ti and the oxidation of Cu layer were observed above $600^{\circ}C$. The grain growth of Cu with the (111) preferred orientation was found to be most pronounced at $500^{\circ}C$. It revealed that the optimum annealing conditions for MOCVD-Cu/PVD-TiN structures to enhance the electrical characteristics without degradation of TiN barriers were in the range of $400^{\circ}C$.

• Journal of the Korean Vacuum Society
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• v.16 no.4
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• pp.298-304
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• 2007

We have studied the effect of $N_2$ flow rate on the structural and optical properties of GaN nanorods grown on (111) Si substrates by radio-frequency plasma-assisted molecular-beam epitaxy. The hexagonal shape nanorods with lateral diameters from 80 to 190 nm with increasing $N_2$ flow rate from 1.1 to 2.0 sccm are obtained. However, the ratio of length (thickness) and compact region increases with increasing $N_2$ flow rate up to 1.7 sccm and then saturate. From the photoluminescence, free exciton transition is clearly observed for GaN nanorods with low $N_2$ flow rate. And the PL peak energies are blue-shifted with decreasing diameter of the GaN nanorods due to size effect. Temperature-dependent photoluminescence spectra for the nanorods with $N_2$ flow rate of 1.7 sccm show an abnormal behavior like "S-shape" with increasing temperature.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.291-291
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• 2011

1차원 반도체인 nanowires (NWs)는 전기적, 광학적으로 일반 bulk구조와 다른 특성을 가지고 있어서 현재 많은 연구가 되고 있다. 일반적으로 NWs는 Au 등의 금속 촉매를 이용하여 성장을 하게 되는데 이때 촉매가 오염물로 작용을 해서 결함을 만들어서 bandgap내에 defect level을 형성하게 된다. 본 연구는 Si(111) 기판 위에 Ga-droplet을 촉매로 사용을 하여 molecular beam epitaxy로 성장을 하였다. 성장온도는 600$^{\circ}C$로 고정을 하였고 growth rate은 GaAs(100) substrate에서 2.5 A/s로 Ga의 양을 고정하고 V/III ratio를 1부터 8까지 변화를 시켰다. As의 양에 따라서 생성되는 NWs의 개수가 증가하고 growth rate이 빨라지는 것을 확인할 수 있었다. Transmission Electron Microscopy 분석 결과 낮은 V/III ratio에서는 zincblende, wurtzite 그리고 stacking faults 가 혼재 되어 있는 것을 확인 할 수 있었다. 이러한 결함은 소자를 만드는데 한계가 있기 때문에 pure zincblende나 pure wurtzite를 가져야 하는데 V/III ratio : 8 에서 pure zincblende구조가 되었다. Gibbs-Thomson effect에 따르면 구조적 변화는 Ga droplet과 NWs의 접면에서 크기가 중요한 역할을 한다[1]. 연구 결과 V/III ratio : 8일 때 Ga droplet의 크기가 zincblende성장에 알맞다는 것을 예상할 수 있었다. laser confocal photoluminescence 결과 상온에서 1.43 eV의 bandgap을 가지는 bulk구조와는 다른 와 1.49eV의 bandgap을 가지는 것을 확인하였다.