• Korean Journal of Materials Research
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• v.29 no.7
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• pp.456-462
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• 2019

ZnO thin-films are grown on a p-Si(111) substrate by RF sputtering. The effects of growth temperature and $O_2$ mixture ratio on the ZnO films are investigated by scanning electron microscopy (SEM), X-ray diffraction (XRD), and room-temperature photoluminescence (PL) measurements. All the grown ZnO thin films show a strong preferred orientation along the c-axis, with an intense ultraviolet emission centered at 377 nm. However, when $O_2$ is mixed with the sputtering gas, the half width at half maximum (FWHM) of the XRD peak increases and the deep-level defect-related emission PL band becomes pronounced. In addition, an n-ZnO/p-Si heterojunction diode is fabricated by photolithographic processes and characterized using its current-voltage (I-V) characteristic curve and photoresponsivity. The fabricated n-ZnO/p-Si heterojunction diode exhibits typical rectifying I-V characteristics, with turn-on voltage of about 1.1 V and ideality factor of 1.7. The ratio of current density at ${\pm}3V$ of the reverse and forward bias voltage is about $5.8{\times}10^3$, which demonstrates the switching performance of the fabricated diode. The photoresponse of the diode under illumination of chopped with 40 Hz white light source shows fast response time and recovery time of 0.5 msec and 0.4 msec, respectively.

• Korean Journal of Materials Research
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• v.29 no.6
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• pp.356-362
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• 2019

$BaSiO_3:RE^{3+}$ (RE = Sm or Eu) phosphor powders with different concentrations of activator ions are synthesized using the solid-state reaction method. The effects of the concentration of activator ions on the structural, photoluminescent, and morphological properties of the barium silicate phosphors are investigated. X-ray diffraction data reveals that the crystal structure of all the phosphors, regardless of the type and the concentration of the activator ions, is an orthorhombic system with a main (111) diffraction peak. The grain particles agglomerate together to form larger clusters with increasing concentrations of activator ions. The emission spectra of the $Sm^{3+}$-doped $BaSiO_3$ phosphors under excitation at 406 nm consist of an intense orange band at 604 nm and three weak bands centered at 567, 651, and 711 nm, respectively. As the concentration of $Sm^{3+}$ increases from 1 to 5 mol%, the intensities of all the emission bands gradually increase, reach maxima at 5 mol% of $Sm^{3+}$ ions, and then decrease significantly with further increases in the $Sm^{3+}$ concentration due to the concentration quenching phenomenon. For the $Eu^{3+}$-doped $BaSiO_3$ phosphors, a strong red emission band at 621 nm and several weak bands are observed. The optimal orange and red light emissions of the $BaSiO_3$ phosphors are obtained when the concentrations of $Sm^{3+}$ and $Eu^{3+}$ ions are 5 mol% and 15 mol%, respectively.

• Advances in nano research
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• v.12 no.3
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• pp.291-300
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• 2022

The behavior of hydrogen species on the surface of the catalyst during the Lewis acid transformation to form Brønsted acid sites over the spherical silica-supported WO_x catalyst was investigated. To understand the structure-activity relationship of Lewis acid transformation and hydrogen bonding interactions, we explore the potential of using the in situ diffuse reflection infrared Fourier transform spectroscopy (DRIFTS) with adsorbed ammonia and hydrogen exposure. From the results of in situ DRIFTS measurements, Lewis acid sites on surface catalysts were transformed into new Brønsted acid sites upon hydrogen exposure. The adsorbed NH₃ on Lewis acid sites migrated to Brønsted acid sites forming NH⁴⁺. The results show that the dissociated H atoms present on the catalyst surface formed new Si-OH hydroxyl species - the new Brønsted acid site. Besides, the isolated Si-O-W species is the key towards H-bond and Si-OH formation. Additionally, the H atoms adsorbed surrounding the Si-O-W species of mono-oxo O=WO₄ and di-oxo (O=)₂WO₂ species, where the Si-O-W species are the main species presented on the Inc-SSP catalysts than that of the IWI-SSP catalysts.

• Journal of the Korean Magnetics Society
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• v.9 no.4
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• pp.196-202
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• 1999

The magnetic properties and the microstructures of the Mn-Ir/Ni-Fe multilayers with various stacking structures and buffer layer materials have been investigated. The (111) texture of Mn-Ir/Ni-Fe was observed in the top structures with Ta, Zr, or Ti buffer materials. However, all Mn-Ir/Ni-Fe multilayers with top structures exhibit high $H_{ex}$, regardless of the (111) preferred orientation of Mn-Ir film. The samples whose high $H_{ex}$ observed grain-to-grain epitaxial tendency and the large grain of Mn-Ir film at the interface. It can be explained that the $H_{ex}$ does not depend on the (111) texture of the Mn-Ir film and the interface roughness, but depends on the grain size of the Mn-Ir film and the morphology of the interface between the Mn-Ir and the Ni-Fe grains, and the $H_c$ depends on the interface roughness between the Mn-Ir and the Ni-Fe films.

• Bulletin of the Korean Chemical Society
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• v.35 no.7
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• pp.2013-2018
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• 2014

The adsorption and decomposition of trimethylene oxide ($C_3H_6O$) molecule on the Al(111) surface were investigated by the generalized gradient approximation (GGA) of density functional theory (DFT). The calculations employed a supercell ($6{\times}6{\times}3$) slab model and three-dimensional periodic boundary conditions. The strong attractive forces between $C_3H_6O$ molecule and Al atoms induce the C-O bond breaking of the ring $C_3H_6O$ molecule. Subsequently, the dissociated radical fragments of $C_3H_6O$ molecule oxidize the Al surface. The largest adsorption energy is about -260.0 kJ/mol in V3, V4 and P2, resulting a ring break at the C-O bond. We also investigated the decomposition mechanism of $C_3H_6O$ molecules on the Al(111) surface. The activation energies ($E_a$) for the dissociations V3, V4 and P2 are 133.3, 166.8 and 174.0 kJ/mol, respectively. The hcp site is the most reactive position for $C_3H_6O$ decomposing.

• 한국신재생에너지학회:학술대회논문집
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• 2010.06a
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• pp.75.2-75.2
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• 2010

We studied the fabrication of polycrystalline silicon (pc-Si) films as seed layers for application of pc-Si thin film solar cells, in which amorphous silicon (a-Si) films in a structure of glass/Al/$Al_2O_3$/a-Si are crystallized by the aluminum-induced layer exchange (ALILE) process. The properties of pc-Si films formed by the ALILE process are strongly determined by the oxide layer as well as the various process parameters like annealing temperature, time, etc. In this study, the effects of the oxide film thickness on the crystallization of a-Si in the ALILE process, where the thickness of $Al_2O_3$ layer was varied from 4 to 50 nm. For preparation of the experimental film structure, aluminum (~300 nm thickness) and a-Si (~300 nm thickness) layers were deposited using DC sputtering and PECVD method, respectively, and $Al_2O_3$ layer with the various thicknesses by RF sputtering. The crystallization of a-Si was then carried out by the thermal annealing process using a furnace with the in-situ microscope. The characteristics of the produced pc-Si films were analyzed by optical microscope (OM), scanning electron microscope (SEM), Raman spectrometer, and X-ray diffractometer (XRD). As results, the crystallinity was exponentially decayed with the increase of $Al_2O_3$ thickness and the grain size showed the similar tendency. The maximum pc-Si grain size fabricated by ALILE process was about $45{\mu}m$ at the $Al_2O_3$ layer thickness of 4 nm. The preferential crystal orientation was <111> and more dominant with the thinner $Al_2O_3$ layer. In summary, we obtained a pc-Si film not only with ${\sim}45{\mu}m$ grain size but also with the crystallinity of about 75% at 4 nm $Al_2O_3$ layer thickness by ALILE process with the structure of a glass/Al/$Al_2O_3$/a-Si.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.52 no.10
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• pp.447-450
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• 2003

This paper presents a process optimization of antireflection (AR) coating on crystalline Si solar cells. Theoretical and experimental investigations were performed on a double-layer AR (DLAR) coating of MgF$_2$/CeO$_2$. We investigated CeO$_2$ films as an AR layer because they have a proper refractive index of 2.46 and demonstrate the same lattice constant as Si substrate. RF sputter grown CeO$_2$ film showed strong dependence on a deposition temperature. The CeO$_2$ deposited at 40$0^{\circ}C$ exhibited a strong (111) preferred orientation and the lowest surface roughness of 6.87 $\AA$. Refractive index of MgF$_2$ film was measured as 1.386 for the most of growth temperature. An optimized DLAR coating showed a reflectance as low as 2.04% in the wavelengths ranged from 0.4${\mu}{\textrm}{m}$ to 1.1${\mu}{\textrm}{m}$. We achieved the efficiencies of solar cells greater than 15% with 3.12% improvement with DLAR coatings. Further details on MgF$_2$, CeO$_2$ films, and cell fabrication parameters are presented in this paper.

• Journal of the Mineralogical Society of Korea
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• v.7 no.2
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• pp.111-127
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• 1994

양남 지역의 제 3 기층인 하서리 응회암층의 중.상부에 부존되는 벤토나이트들은 원암의 암상과 화학조성에 의존되는 광호 양상과 광물상을 나타낸다. 벤톤나이트들은 대부분 안산암질 원암의 기원을 시사하는 희유 및 희토류 원소들의 함유 양상을 보이고, 현무암질 원암의 벤토나이트는 최상부의 일부 층준에만 그 산출이 국한된다. 이 지역의 벤토나이트는 주로 유리질 내지 라필리 응회암이 속성 변질된 것으로 이 과정에서 SiO2와 알칼리 (Na, K) 성분들이 고갈되는 화학 성분상의 유동 양상이 인지된다. 벤토나이트는 주된 광물 성분인 스멕타이트 이외에 흔히 단백석 및 석영같은 규산 광물과 휼란다이트, 모데나이트 및 클리높틸로라이트간은 불석광물들을 수반한다. 스멕타이트는 대부분 몰노릴로나이트 유형이지만 최상부 층준의 현무암질원 벤토나이트와 비교하여 논트로나이트의 광물 화학, X-선회절 양상, 층간 화학 및 염화학적 특성 등이 논의되었다. 이 지역 벤토나이트의 형성과정은 (1) 화산쇄설물의 급속한 퇴적, (2) 비이상적으로 높은 매몰 온도(<8$0^{\circ}C$) 조건, (3) 규산 광물의침전에 의한 공극수 내외 H4SiO4의 제거, (4) 원암의 낮은 Si/al 함유비와 높은 Fe 함유도 등에 의해서 조장된 것으로 해석된다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.593-596
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• 1999

This paper presents a process optimization of antireflectiun (AR) coating on crystalline Si solar cells. Theoretical and experimental investigations were performed on a doble-layer AR(DLAR) coating of MgF$_2$/CeO$_2$, We investigated CeO$_2$ films as an All layer because they hale a proper refractive index of 2.46 and demonstrate the same lattice constant as Si substrate. RF sputter grown CeO$_2$ film showed strong dependence on a deposition temperature. The CeO$_2$ film deposited at 400 $^{\circ}C$ exhibited a strong (111) preferred orientation and the lowest surface roughness of 6.87 $\AA$. Refractive index of MgF$_2$ film was measured as 1.386 for the most of growth temperature. An optimized DLAR coating showed a reflectance as low as 2.04 % in the wavelengths ranged from 0.4 7m to 1.1 7m. We achieved the efficiencies of solar cells greater than 15% with 3.12 % improvement with DLAR coatings . Further details on MgF$_2$, CeO$_2$ films, and cell fabrication Parameters are presented in this paper.

• YAKHAK HOEJI
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• v.33 no.2
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• pp.111-117
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• 1989

The optimum reaction conditions for the acid consuming capacity of aluminum silicate synthesized from the reaction of sodium silicate solution and potassium aluminum sulfate solution were investigated by Box-Wilson experimental design, and the micromeritic properties were examined by the means of BET $N_2$ adsorption, Hg penetrometer and methylen blue adsorption. The chemical composition of the samples were analyzed by gravitic method. The results were found to be as follows: optimum reaction temperature $54.7^{\circ}C$, both concentrations of reactant soln 15.7%, reactants molar ratio (Al/Si) 0.5 and drying temperature $65.0^{\circ}C$. The acid consuming capacity of the sample prepared by above optimum conditions was 68 ml and the chemical composition was $Al_2O_3{\cdot}3.6SiO_2{\cdot}3H_2O$. The relationship between acid consuming capacity and micromeritic properties could not found in the range of experiments. Therefore, it is assumed that the acid consuming mechanism of aluminum silicate depends on the neutralization of $Al_2O_3$ and buffer action of $SiO_2$ in sample.