• Proceedings of the KSME Conference
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• 2001.06c
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• pp.111-115
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• 2001

The die design for hot forging was investigated for manufacturing precisely of scroll rotor made with Al-Si alloy. A scroll rotor is a non-symmetric 3-D shape part, having involute wraps. Disk-shaped billet of Al-Si alloy was extruded to wraps and boss simultaneously. Because the involute wraps is not axi-symmetric, the flow velocity and the stress of die is very much different at each portion. Moreover, the die in wraps portion is a cantilever beam and fractured. In this paper, the analysis of forming and die stress is investigated using the FEM tool, DEFORM-3D. The tensile strength of tool material is $250kg/mm^{2}$. From the analysis results, we can find the maximum principal stress of die is over the fracture strength and redesign the die. The prototype forged part is superior in net shaping and microstructure.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.1
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• pp.21-26
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• 2004

Ultra-thin silicon dioxides were grown on p-type(100) oriented silicon employing rapid thermal dry oxidation technique at the temperature range of 850∼1050 $^{\circ}C$. The growth rate of the ultra-thin film was fitted well with tile model which was proposed recently by da Silva ＆ Stosic. The capacitance-voltage, current-voltage, characteristics were used to study the electrical properties of these thin oxides. The minimum interface state density around the midgap of the MOS capacitor having oxide thickness of 111.6 $\AA$ derived from the C-V curve was ranged from 6 to 10${\times}$10$^{10}$ /$\textrm{cm}^2$eV.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.1084-1087
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• 2001

The (Sr$\sub$0.85/Ca$\sub$0.15/)TiO$_3$(SCT) thin films are deposited on Pt-coated electrode(Pt/TiN/SiO$_2$/Si) using RF sputtering method. The crystallinity of SCT thin films is increased with increase of substrate temperature in the temperature range of 100[$^{\circ}C$]∼500[$^{\circ}C$]. Also, the crystallinity of SCT thin films are obtained at the substrate temperature above 400[$^{\circ}C$]. SCT thin films had (111) preferred orientation. The dielectric constant changes almost linearly in temperature ranges of-80∼+90[$^{\circ}C$]. The temperature properties of the dielectric loss have a stable value within 0.1. SCT thin films used in this study show the phenomena of dielectric relaxation with the increase of frequency, and the relaxation frequency is observed above 200[kHz].

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1995.11a
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• pp.71-73
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• 1995

In this work, we synthsized GaN powders by the direct reactions of Ga with NH$_3$at the temperature range of 950∼1150$^{\circ}C$ and we growth the GaN thin films on Si and sapphire substrates using the synthesized GaN powders by the vapor phase epitaxy method. The synthesized powder had hexagonal crystal structures with lattice constants of a$\sub$0/=3.1895${\AA}$, c$\sub$0/=5.18394${\AA}$. The reaction rates of GaN were increased with both reaction time and temperature, however it did not depends on the flow rates of NH$_3$. The island type GaN crystals were grown on (0001) sapphire substrates and fast lateral growth of GaN on (111) Si substrate than sapphire was observed in our experiments.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2006.10a
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• pp.170-173
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• 2006

Ferroelectric $Bi_{3.35}Sm_{0.65}Ti_3O_{12}(BST)$ thin films were deposited on $Pt(111)/Ti/SiO_2/Si(100)$ substrates by a sol-gel spin-coating process. In this experiments, $Bi(TMHD)_3$, $Sm_5(O^iPr)_{13}$, $Ti(O^iPr)_4$ were used as precursors, which were dissolved in 2-methoxyethanol. Thereafter, the thin films with the thickness, of 240nm were annealed from 600 to $720^{\circ}C$ in oxygen atmosphere for 1 hr, and post-annealed in oxygen atmosphere for 1 hr after deposition of Pt electrode to enhance the electrical properties. The remanent polarization and coercive voltage of the BST thin films annealed at $720^{\circ}C$ were $19.48\;{\mu}C/cm^2$ and 3.40 V, respectively, and a fatigue-free characteristics. As a result, Sm-substituted bismuth titanate films with good ferroelectric properties and excellent fatigue resistance are useful candidates for ferroelectric memory applications.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.05a
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• pp.240.1-240.1
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• 2011

본 연구에서는 펄스레이져 박막 증착법(Pulsed Laser Deposition;PLD)을 이용하여 연자성의 CoNiFe (CNF) 물질과 강유전 특성의$BaTiO_3$ (BTO) 물질을 다층박막 구조로 제작하여 약자장(H=200 Oe)에 의해 에너지를 집적 시키거나 유전상수를 조절하여 박막의 구조 변화에 따른 커패시턴스 변화를 연구하였다. 다양한 구조의 다층 박막은 Si/$SiO_2$/Ti/Pt(111) 기판상에 PLD을 이용하여 증착하였으며, Phillp's X-선 회절기 (XRD)를 이용하여 결정구조와 격자 상수를 결정하였다. FE-SEM, TEM, AFM 및 EDS를 이용하여 박막 표면/단면의 미세구조 및 물질에 따른 조성비를 확인하였다. 자기적 특성을 위해Vibrating Sample Magnetometer (VSM)를 측정하였고, 전기적 특성은 LCR meter를 이용하여 측정하였다.

• Proceedings of the Korean Vacuum Society Conference
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• 1996.06a
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• pp.109-110
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• 1996

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.367-367
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• 2010

Electrical characteristics of Large-grain silicon with Ni-induced crystallization which gate insulator is made of 80 nm $SiO_2$ and 20 nm SiNx was fabricated and measured with different channel widths, channel length fixed $10{\mu}m$. Focusing on the changes of channel widths from $4{\mu}m$ to $40{\mu}m$. Field-effect mobility decreased from 111.30 to $94.10\;cm^2/V_s$ when the channel widths increased. Still threshold voltage was almost similar with -1.06V.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.3
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• pp.177-182
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• 2010

The pentacene-based organic thin film transistors(OTFTs) using polyvinylalcohol(PVA) alignment layer were fabricated on the $SiO_2$ evaporated to n-type (111) Si substrates. The pentacene film was deposited by thermally evaporated at $10^{-7}$ torr. X-ray diffraction (XRD) and atomic force microscope(AFM) measurement showed pentacene film which deposited on rubbed PVA layers were partially crystallized at (001) plane. The pentacene OTFTs with PVA layers rubbed perpendicular to the direction of current flow was shown to align better orientation than parallel rubbed case and thus to enhance the mobility and saturation current by a factor of 2.3 respectively. We obtained mobility by 0.026 $cm^2$/Vs and on-off current ratio by ${\sim}10^8$.

• Journal of the Korean Vacuum Society
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• v.3 no.4
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• pp.434-441
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• 1994

메탄과 수소 혼합가스로 직류 플라즈마 화학 증착법을 이용하여 방전전류 반응압력 메탄농도 및 피착체의 온도를 변화시키면서 다이아몬드 유산탄소 박막(DLCF)을 Si(111)-웨이퍼 위에 합성하였다. 주 사전자 현미경(SEM)과 레이져 Raman 스펙트로포토메터로 확인된 양질의 DLCF를 얻은 조건은 방전전 류 반응 압력, 메탄농도 그리고 피착체의 온도가 각각 480mA, 32 Torr, 1.0 vol% 및 85$0^{\circ}C$ 였다. 이 DLCF는 대부분 sp3 탄소결합으로 된 구형의 알갱이들로 구성되어 있고 그굴절률은 2.2로 천연다이아몬 드와 비슷한 값을 가지고 있다. 또한 DLCF 성장에서 수소피복이 매우 중요한 것으로 밝혀졌다.