• 한국조명전기설비학회:학술대회논문집
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• 한국조명전기설비학회 2004년도 춘계학술대회 논문집
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• pp.318-320
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• 2004

We investigated the basic properties of a superconductive current limiting fuse (SCLF) based on YBCO/Au films. The SCLF consists of meander type YBCO stripes covered with an Au layer for current shunt. The fault current was first limited to a designed value in less than 0.4 msec by resistance development in YBCO/Au upon quenching. This enables the SCLF to transfer small fault power and the suppressed current was sustained for more than 0.5 msec while Au layer melting and arcing. The arcing time was less than 2.5 msec, that is short enough to do self-interruption.

• 한국전기전자재료학회논문지
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• 제17권6호
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• pp.673-677
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• 2004

We present the basic properties of a superconductive fuse (SF) based on YBCO/Au films. The SF consists of YBCO stripes covered with Au layers for current shunt. The fault current was limited to a designed value in less than 0.4 msec by resistance development in YBCO/Au upon quenching. This enabled the SF to transfer small fault power and the suppressed current was sustained for more than 0.5 msec while Au layer melting and arcing. The arcing time was less than 2.5 msec, that is short enough to do self-interruption. Under the source voltage of 100 $V_{rms}$, the longer the duration time of fault current was, the shorter its discharge time was. The duration time of fault current and its discharge time were reduced by increased voltages in the range of 200 - 300 $V_{rms}$. We thought that this was because the quench propagation was limited by local melting generated with higher voltage.age.

• Journal of Korean Neurosurgical Society
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• 제29권9호
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• pp.1209-1214
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• 2000

Objectives : The measurement of resistance to cerebrospinal fluid outflow($R_o$) can clearly delineate cerebrospinal fluid dynamics in patients with ventricular dilatation and can help in selecting patients to undergo shunt placement. With regards to type of infusion method, bolus injection is known to be more practical and safer than continuous infusion. The purpose of this study was to obtain $R_o$ of normal adults using lumbar bolus injection method. Material and Methods : Twenty adults aged 25 to 52 years were studied using lumbar bolus injection method. Fifteen patients with hemifacial spasm and five with cerebral concussion underwent $R_o$ measurement under propofol general anesthesia and local anesthesia, respectively. Results : The mean values of $R_o$ determined 1 minute and 2 minutes after bolus injection were $4.8{\pm}1.7$ and $4.4{\pm}1.6mmHg/ml/min$, respectively. There was no significant difference of $R_o$ between propofol general anesthesia group and local anesthesia group. Two patients showed $R_o$ greater than 6mmHg/ml/min. One patient revealed unexpectedly high level of $R_o$ due to severe spinal stenosis. Conclusion : Mean Ro in this study was higher than that of Shapiro's study. Borderline Ro near 6mmHg/ml/min should be regarded with caution and compared with clinical symptoms and results of other studies. Patients with severe spinal stenosis should be evaluated with caution.

• 마이크로전자및패키징학회지
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• 제26권3호
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• pp.75-80
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• 2019

친환경 및 고효율의 장점 때문에 신재생 에너지원으로 널리 사용되고 있는 실리콘 태양 전지는 모듈을 직렬 연결하여 발전할 때 500-1,500 V의 전압이 걸리게 된다. 모듈 프레임과 태양 전지 사이에 걸린 이러한 고전압 차에 의해 장시간 가동시 효율 및 최대 출력이 감소하는 현상인 potential-induced degradation(PID)은 실리콘 태양 전지의 수명을 단축시키는 주요 원인 중 하나로 알려져 있다. 특별히 전면 유리의 $Na^+$ 이온이 고전압에 의해 반사방지막을 거쳐 실리콘 내부로 확산하여 실리콘 내부 적층 결함 등에 축적되는 것이 PID의 원인으로 보고되고 있다. 본 연구에서는 p-형 PERC(passivated emitter and rear contact) 구조 실리콘 태양전지를 대상으로 $Na^+$ 이온의 확산 장벽으로 작용할 수 있는 $SiO_x$층이 p-n 접합과 반사방지막 사이에 삽입되었을 때 그 두께가 PID 현상 완화에 미치는 영향을 연구하였다. 96 시간 동안 1,000 V의 전압을 연속적으로 가한 후 병렬 저항, 효율 및 최대 출력을 측정한 결과 삽입된 $SiO_x$ 장벽층의 두께가 7-8 nm 이상일 때 비로소 PID 현상이 효과적으로 완화되는 것으로 나타났다.

• 대한치과보철학회지
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• 제31권3호
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• pp.423-446
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• 1993

Titanium and its alloys are finding increasing use in medical devices and dental implants. The strong selling point of titanium is its resistance to the highly corrosive body fluids in which an implant must survive. This corrosion resistance is due to a tenacious passive oxide or film which exists on the metal's surface and renders it passive. Potentiodynamic polarization measurement is one of the most commonly used electro-chemical methods that have been applied to measure corrosion rates. And the potentiodynamic polarization test supplies detailed information such as open circuit, rupture, and passivation potential. Furthermore, it indicates the passive range and sensitivity to pitting corrosion. This study was designed to compare the corrosion resistance of the commonly used dental implant materials such as CP Ti, Ti-6A1-4V, Co-Cr-Mo alloy, and 316L stainless steel. And the effects of galvanic couples between titanium and the dental alloys were assessed for their useful-ness-as. materials for superstructure. The working electrode is the specimen , the reference electrode is a saturated calomel electrode (SCE), and the counter electrode is made of carbon. In $N_2-saturated$ 0.9% NaCl solutions, the potential scanning was performed starting from -800mV (SCE) and the scan rate was 1 mV/sec. At least three different polarization measurements were carried out for each material on separate specimen. The galvanic corrosion measurements were conducted in the zero-shunt ammeter with an implant supraconstruction surface ratio of 1:1. The contact current density was recorded over a 24-hour period. The results were as follows : 1. In potential-time curve, all specimens became increasingly more noble after immersion in the test solution and reached between -70mV and 50mV (SCE) respectively after 12 hours. 2. The Ti and Ti alloy in the saline solution were most resistant to corrosion. They showed the typical passive behavior which was exhibited over the entire experimental range. Therefore no breakdown potentials were observed. 3. Comparing the rupture potentials, Ti and Ti alloy had the high(:st value (because their break-down potentials were not observed in this study potential range ) followed by Co-Cr-Mo alloy and stainless steel (316L). So , the corrosion resistance of titanium was cecellent, Co-Cr-Mo alloy slightly inferior and stainless steel (316L) much less. 4. The contact current density sinks faster than any other galvanic couple in the case of Ti/gold alloy. 5. Ag-Pd alloy coupled with Ti yielded high current density in the early stage. Furthermore, Ti became anodic. 6. Ti/Ni-Cr alloy showed a relatively high galvanic current and a tendency to increase.

• 한국전기전자재료학회논문지
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• 제29권8호
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• pp.461-465
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• 2016

n-type silicon shows the better tolerance towards metal impurities with a higher minority carrier lifetime compared to p-type silicon substrate. Due to better lifetime stability as compared to p-type during illumination made the photovoltaic community to switch toward n-type wafers for high efficiency silicon solar cells. We fabricated the front electrode of the n-type solar cell with AgAl paste. The electrodes characteristics of the AgAl paste depend on the contact junction depth that is closely related to the firing temperature. Metal contact depth with p+ emitter, with optimized depth is important as it influence the resistance. In this study, we optimize the firing condition for the effective formation of the metal depth by varying the firing condition. The firing was carried out at temperatures below $670^{\circ}C$ with low contact depth and high contact resistance. It was noted that the contact resistance was reduced with the increase of firing temperature. The contact resistance of $5.99m{\Omega}cm^2$ was shown for the optimum firing temperature of $865^{\circ}C$. Over $900^{\circ}C$, contact junction is bonded to the Si through the emitter, resulting the contact resistance to shunt. we obtained photovoltaic parameter such as fill factor of 76.68%, short-circuit current of $40.2mA/cm^2$, open-circuit voltage of 620 mV and convert efficiency of 19.11%.

• 대한전자공학회논문지
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• 제18권4호
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• pp.49-61
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• 1981

N+P, N+PP+ 형 태양전지를 제조하여 얻은 실험자료들을 근거로 실리콘 접합형 태양전지에 일반적으로 적용할 수 있는 컴퓨터 모의 실험 프로그램을 개발하고, 이의 유용성을 확인하였다. 이 모의 실험 프로그램은 N+P, P+N, N+PP+, P+NN+형의 실리콘 태양전지에 적용할 수 있는 것으로, 입사광은 AMI, 등강도 광원, 인공조명으로 많이 사용되는 GE -ELH 광원이고, AR코팅은 Si3N4형과 투과도가 파장에 관계없는 일정형 2종류가 있으며, 프로그램에서 이들 전지의 구조, 광원, AR 코팅 종류에 대한 파장 특성분포도 쉽게 변화시킬 수 있도록 되어 있다. 이 모의실험의 결과들을 토대로 N+와 P 영역에서의 평균도오핑농도와 전지의 두께, AMI 스펙트럼에 대한 집광도, 앞면 접합깊이에 대하여 효율이 최대가 되는 최적치들을 구하였으며, 앞면의 표면 재결합 속도, 접합부에서의 캐리어의 유효 수명, 누설저항에 대하여는 허용 한계치로, 기타 효율변화인자로서 동작온도 직렬저항과 전기장의 세기에 대하여는 효율의 변화율로서 파라미터들이 효율에 미치는 영향들을 분석하였다.

• Journal of Korean Neurosurgical Society
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• 제39권1호
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• pp.20-25
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• 2006

Objective : The authors analyze prospectively the result of transcranial doppler[TCD] in normal pressure hydrocephalus and compared its cerebral blood flow parameters to radionuclide cerebrospinal fluid[CSF] flow study, postoperative brain computed tomography[CT] findings and clinical outcome, and studied the relationship between cerebral hemodynamics and clinical performance. Methods : Twenty five patients with hydrocephalus undertook pre- and post-operative TCD but only preoperative CSF flow study was performed. Mean flow velocity[Vm], pulsatility index[PI] and resistance index[RI] were assessed through TCD and changes in ventricle size and cortical gyral atrophy were checked through brain CT. Results : Postoperative hydrocephalus showed an increase in Vm[ACA P=0.037, MCA P=0.034], decrease in PI[ACA P=0.019, MCA P=0.017] and decrease in RI [ACA P=0.017, MCA P=0.021] compared to preoperative TCD parameters in the postoperative improvement group. In the postoperative improvement group, postoperative TCD parameters correlated with CSF flow study grade [Vm : $R^2=-0.75$, PI : $R^2=0.86$, RI : $R^2=0.78$] and ventriculocranial ratio change correlated with PI change [$R^2=0.73$]. The convexity gyral atrophy and initial TCD parameters showed close relationship to outcome. Conclusion : PI and RI can be used as an indicator of post operative prognosis, and with the addition of CSF flow study values, can also be used as a tool to predict pre-op and post-op patient status and successful shunt surgery.

• Journal of the Optical Society of Korea
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• 제14권4호
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• pp.321-325
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• 2010

We analyze the current density - voltage (J - V) curve of a Cu(In,Ga)$Se_2$ (CIGS) thin-film solar cell measured at different irradiation power densities. For the solar-cell sample investigated in this study, the fill factor and power conversion efficiency decreased as the irradiation power density (IPD) increased in the range of 2 to 5 sun. Characteristic parameters of solar cell including the series resistance ($r_s$), the shunt resistance ($r_{sh}$), the photocurrent density ($J_L$), the saturation current density ($J_s$) of an ideal diode, and the coefficient ($C_s$) of the diode current due to electron-hole recombination via ionized traps at the p-n interface are determined from a theoretical fit to the experimental data of the J - V curve using a two-diode model. As IPD increased, both $r_s$ and $r_{sh}$ decreased, but $C_s$ increased.

• E2M - 전기 전자와 첨단 소재
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• 제7권3호
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• pp.243-251
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• 1994

ITO(Indium Tin Oxide) film with thickness of 1500.angs. was prepared by an e-beam evaporator onto a glass and a p-type InP wafer (100) LEC grown Zn-doped p=2.3*10$\^$16/cm$\^$-3/), in which the components of ITO used for evaporation source were hot pressed pellets 1 mole% ln$\_$2/O$\_$3/+9 mole% SnO$\_$2/, and evaporated in O$\_$2/ ambient. The optimum conditions to preparation of ITO thin film were the substrate temperature of 350.deg. C, the injected oxygen pressure of 2*10$\^$-4/ torr, and the evaporation speed of 0.2-0.3.angs./sec, respectively. In these optimum conditions, the resistivity and the carrier concentration were 5.3*10$\^$-3/ .ohm.-cm, 6.5*10$\^$20/cm$\^$-3/, and the transmittance was over 80%. From the results of J-V measurements in ITO/p-InP structure solar cells, the higher pressure of injected oxygen, the more open circuit voltage. The efficiency of ITO/p-InP solar cell without the grid line contact, prepared by the optimum evaporation conditions, was 7.19%. By using the grid line contact, the efficiency, the open circuit voltage, the short circuit current density, the fill factor, the series resistance, and the shunt resistance were 8.5%, 0.47V, 29.48 mAcm$\^$-2/ , 61.35%, 3.ohm., and 26.6k.ohm., respectively.