• JSTS:Journal of Semiconductor Technology and Science
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• v.13 no.2
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• pp.127-138
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• 2013

The impact of Empty Space layer in the channel region of a Double Gate (i.e. ESDG) MOSFET has been studied, by monitoring the DC, RF as well as the digital performance of the device using ATLAS 3D device simulator. The influence of temperature variation on different devices, i.e. Double Gate incorporating Empty Space (ESDG), Empty Space in Silicon (ESS), Double Gate (DG) and Bulk MOSFET has also been studied. The electrical performance of scaled ESDG MOSFET shows high immunity against Short Channel Effects (SCEs) and temperature variations. The present work also includes the linearity performance study in terms of $VIP_2$ and $VIP_3$. The proper bias point to get the higher linearity along with the higher transconductance and device gain has also been discussed.

• The Journal of the Convergence on Culture Technology
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• v.7 no.4
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• pp.659-665
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• 2021

Short video applications (e.g., TikTok, YouTube shorts) are growing quickly in terms of active users and usage time. Of course, advertising industry is utilizing the app as AD channel. The current study, however, argues that the effectiveness of ADs in short video apps are not articulated well and that precise research for measuring the effect is required. In this context, this study measured the effects of storytelling ad types(reality, parody, creative) and message sensation value(high vs. low level) on story transportation. The notable finding is that when creative storytelling ad type which requires more cognitive resources than other two types meets high level of message sensation value, ad viewers could reach cognitive overload state which induced low effectiveness of ad. As its result, the effectiveness of AD reduced. More specific theoretical discussion and suggestions for advertising producers are described.

• The Korean Journal of Physiology and Pharmacology
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• v.8 no.5
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• pp.289-293
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• 2004

To investigate whether VacA (vacuolating toxin) produced by Helicobacter pylori Korean stain 99 induces intestinal secretion, purified VacA was added to T84 cell monolayers mounted in Ussing chambers, and electrical parameters were monitored. Mucosal addition of low pH-pretreated VacA increased short circuit current (Isc). The effect was time- and dose-dependent and saturable. The time-to-peak Isc was concentration-dependent. Chloride channel inhibitors, niflumic acid or 5-nitro-2-(3-phenylpropylamino)-benzoate (NPPB), inhibited VacA-stimulated Isc. Carbachol (CCh)-induced increase of Isc was prolonged by the addition of VacA to the mucosal side only. The effect was unaltered by the addition of niflumic acid. VacA did not show cytopathic effects. These studies indicate that VacA is a nonlethal toxin that acts in a polar manner on T84 monolayers to potentiate $Cl^-$ secretion and the response to CCh secretion without decrease in monolayer resistance. VacA may contribute to diarrhea diseases in human intestinal epithelial cells.

• Journal of Medicine and Life Science
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• v.15 no.2
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• pp.62-66
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• 2018

A-type $K^+$ ($I_A$) channels are transiently activated in the suprathreshold membrane potential and then rapidly inactivated. These channels play roles to control the neuronal excitability in pyramidal neurons in hippocampi. We here electrophysiologically tested if regulatory functions of $I_A$ channels might be targeted by acute activation of glutamatergic synaptic transmission in cultured hippocampal neurons(DIV 6~8). The application of high KCl in recording solutions(10 mM, 2 min) to increase presynaptic glutamate release, significantly reduced the peak of somatic $I_A$ without changes of gating kinetics. This indicates that neuronal excitation induced by the enhancement of synaptic transmission may process with distinctive signaling cascades to affect voltage-dependent ion channels in hippocampal neurons. Therefore, it is possible that short-lasting enhancement of synaptic transmission is functionally restricted in local synapses without effects on intracellular signaling cascades affecting a whole neuron, efficiently and rapidly enhancing synaptic functions in hippocampal network.

• Journal of Korean Society of Environmental Engineers
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• v.27 no.9
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• pp.952-957
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• 2005

A sensitivity analysis study was performed to examine the effects of cell size on a distributed non-point source pollution model. The model, AnnAGNPS, whiff is a modified version of USDA's AGNPS, was applied to Eung stream watershed, a tributary of Cheongmi stream located in the South Branch of Han River System. The model components and results, such as channel length, slope, land use, and delivery ratio, were analyzed according to the various cell sizes from 10 to 200 ha. As cell sire increases, channel length decreases due to short-circuiting of meandering creek. The decreased channel length has more significant effects on the model results than any other geomorphological change. When the effects of land use and soil distribution are excluded, sediment delivery loads increase due to shorter time to reach the outlet of the watershed in larger tell size. When those effects are included, however, sediment delivery loads decrease in larger fell size because the variety of land use types can not be inputted. The predominant land use in the applied watershed is forest with very low soil erosion such that the predicted sediment delivery might be much lower than real system. The cell size of 30 ha was determined to produce the most appropriate resolution. Surface runoff and non-point source loads of TN, TP and BOD were predicted and the results agree well with the field measurements. From this study, it was shown that the model results would be very dependent on variations of topography, land use, and soil distribution, as a function of cell size, and the optimum cell size is very important for successful application of distributed non-point source pollution model.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.8
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• pp.31-37
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• 1998

A new self-consistent hole mobility model that includes lattice and hole temeprature has been proposed. By including the lattice and hole temperatures as well as the effective transverse field and the interface fixed charge, the model predicted the saturation of hole drift velocity and showed the effects of coulomb scattering, surface phonon scattering, and surface roughness scattering. The calculated data by the model were compared with the reported experimental data and they were shown to agree quite well. The new model is expected to estimate the characteristics of very short channel devices in the in the hydrodynamic model simulation.

• Journal of Electrical Engineering and Technology
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• v.8 no.6
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• pp.1481-1486
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• 2013

In this paper, a new two dimensional (2D) analytical model of a Dual Material Gate tunnel field effect transistor (DMG TFET) is presented. The parabolic approximation technique is used to solve the 2-D Poisson equation with suitable boundary conditions. The simple and accurate analytical expressions for surface potential and electric field are derived. The electric field distribution can be used to calculate the tunneling generation rate and numerically extract tunneling current. The results show a significant improvement of on-current and reduction in short channel effects. Effectiveness of the proposed method has been confirmed by comparing the analytical results with the TCAD simulation results.

• Vacuum Magazine
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• v.3 no.1
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• pp.16-21
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• 2016

FinFETs are able to be scaled down to 22 nm and beyond while suppressing effectively short channel effect, and have superior performance compared to 2-dimensional (2-D) MOSFETs. Bulk FinFETs are built on bulk Si wafers which have less defect density and lower cost than SOI(Silicon-On-Insulator) wafers. In contrast to SOI FinFETs, bulk FinFETs have no floating body effect and better heat transfer rate to the substrate while keeping nearly the same scalability. The bulk FinFET has been developed at 14 nm technology node, and applied in mass production of AP and CPU since 2015. In the development of the bulk FinFETs at 10 nm and beyond, self-heating effects (SHE) is becoming important. Accurate control of device geometry and threshold voltage between devices is also important. The random telegraph noise (RTN) would be problematic in scaled FinFET which has narrow fin width and small fin height.

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.149-152
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• 2003

Soruce/drain (or, LDD) formation technology is critical to device reliability especially in the case of short channel LTPS-TFT devices. Ion shower doping with a main ion source of $P_2H_x$ was conducted on ELA Poly-Si. We report the effects of annealing methods on dopant activation and damage recovery in ion-shower doped poly-Si.

• JSTS:Journal of Semiconductor Technology and Science
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• v.5 no.2
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• pp.136-147
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• 2005

A theoretical design evaluation based on a hydrodynamic transport simulation of strained Si-SiGe on insulator (SSOI) type nMOSFETs is reported. Although, the net performance improvement is quite limited by the short channel effects, simulation results clearly show that the strained Si-SiGe type nMOSFETs are well-suited for gate lengths down to 20 nm. Simulation results show that the improvement in the transconductance with decreasing gate length is limited by the long-range Coulomb scattering. An influence of lateral and vertical diffusion of shallow dopants in the source/drain extension regions on the device performance (i.e., threshold voltage shift, subthreshold slope, current drivability and transconductance) is quantitatively assessed. An optimum layer thickness ($t_{si}$ of 5 and $t_{sg}$ of 10 nm) with shallow Junction depth (5-10 nm) and controlled lateral diffusion with steep doping gradient is needed to realize the sub-50 nm gate strained Si-SiGe type nMOSFETs.