• Transactions on Electrical and Electronic Materials
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• 제4권6호
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• pp.17-20
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• 2003

This paper describes the effect of halogenic gettering during oxide passivation of commercial solar cell with the $N^{+}$-P-$N^{+}$ structure. In order to study the effect of halogenic gettering on $N^{+}$-P-$N^{+}$ structure mono-crystalline silicon solar cell, we performed conventional POCl$_3$ diffusion for emitter formation and oxide passivation in the presence of HCl vapors. The $N^{+}$-P-$N^{+}$ structure based silicon solar cells were found to have higher short circuit current and minority carrier lifetime. Their performance was also found to be superior than the conventional $N^{+}$-P-$N^{+}$ structure based mono-crystalline silicon solar cell. The cell parameters of the $n^{+}$-p-$p^{+}$ and $n^{+}$-p-$n^{+}$ structure based cells, passivated by HCl assisted oxidation were measured. The improvement in $I_{sc}$ was attributed to the effect of the increased diffusion length of minority carriers, which came from the halogenic gettering effect during the growth of passivating oxide. The presence of chlorine caused gettering of the cells by removing the heavy metals, if any. The other advantage of the presence of chlorine was the removal of the diffusion induced (in oxygen environment) stacking faults and line defects from the surfaces of the silicon wafers. All these effects caused the improvement of the minority carrier lifetime, which in-turn helped to improve the quality of the solar cells.

• 한국전자통신학회논문지
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• 제13권4호
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• pp.721-728
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• 2018

본 논문은 다양한 구조의 선형 블록 오류정정코드를 소개하고, 이를 회로로 구현하여 비교 분석한 결과를 보여주고 있다. 메모리 시스템에서는 잡음 전력으로 인한 비트 오류를 방지하기 위해 ECC(: Error Correction Code)가 사용되어 왔다. ECC의 종류에는 SEC-DED(: Single Error Correction Double Error Detection)와 SEC-DED-DAEC(: Double Adjacent Error Correction)가 있다. SEC-DED인 Hsiao 코드와 SEC-DED-DAEC인 Dutta, Pedro 코드를 각각 Verilog HDL을 이용해 설계 후 $0.35{\mu}m$ CMOS 공정을 사용해 회로로 합성하였다. 시뮬레이션에 의하면 SEC-DED회로는 인접한 두 개의 비트 오류를 정정하지 못하지만 적은 회로 사용면적과 빠른 지연 시간의 장점이 있으며, SEC-DED-DAEC 회로의 경우 Pedro 코드와 Dutta 코드 간에는 면적, 지연 시간의 차이가 없으므로 오류 정정률이 개선된 Pedro 코드를 사용하는 것이 더 효율적임을 알 수 있다.

• 한국안전학회지
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• 제28권3호
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• pp.69-73
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• 2013

The purpose of this paper is to analyze the carbonization pattern and operation characteristics of an MCCB. The MCCB is consisted of the actuator lever, actuator mechanism, bimetallic strip, contacts, up and down operator, arc divider or extinguisher, metal operation pin, terminal part, etc. When the actuator lever of the MCCB is at the top or the internal metal operation pin is in contact with the front part, the MCCB is turned on or off. It means trip state if the actuator lever or the internal metal operation pin moves to back side. In the UL 94 vertical combustion test, white smoke occurred from the MCCB when an average of 17~24 seconds elapsed after the MCCB was ignited and black smoke occurred when an average of 45~50 seconds elapsed. It took 5~6 minutes for the MCCB surface to be half burnt and took an average of 8~9 minutes for the MCCB surface to be entirely burnt. In the UL 94 test, the MCCB trip device operated when an average 7~8 minutes elapsed. If the MCCB trip has occurred, it may have been caused by an electrical problem such as a short-circuit, overcurrent, etc., as well as fire heat. From the entire part combustion test according to KS C 3004, it was found that the metal operation pin could be moved to the MCCB trip position without any electrical problems.

• 조명전기설비학회논문지
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• 제22권10호
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• pp.8-17
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• 2008

본 논문에서는 선박용 HID조명의 방전 개시전압을 조절함으로써 초기 방전전류를 억제하여, HID조명의 안정적인 점등이 가능한 제어방식을 제안하였다. 제안된 제어 방식은 방전 대기전압까지 출력전압을 상승시킨 후, 충전전압의 저항부하 방전을 통하여 전압을 감소시키면서, 설계된 방전개시전압시점에서 이그니터를 점화하여 방전 개시 전류를 제한한다. 방전 후 정상상태에서는 정전류 제어로 조도를 제어하게 된다. 제안된 방식은 별도의 전압제어기를 포함하지 않으면서도, 방전개시 시점을 조절할 수 있으므로, 초기 방전 전류를 크게 제한할 수 있으므로, 안정적인 점등과 조명의 수명을 확대할 수 있는 장점이 있다. 또한 조명의 이상상태를 간단한 이상검출 회로를 통하여 순시적으로 감시하여 전체 시스템의 보호 성능을 개선하였다. 제안된 제어기는 실제 선박용 2.5[kW]급의 HID 탐사조명에 대한 실험을 통하여 검증하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1992년도 춘계학술대회 논문집
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• pp.91-96
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• 1992

The nonvolatile SNOSFET EEPROM memory devices with the channel width and iength of 15[$\mu\textrm{m}$]${\times}$15[$\mu\textrm{m}$], 15[$\mu\textrm{m}$]${\times}$1.5[$\mu\textrm{m}$] and 1.9[$\mu\textrm{m}$]${\times}$1.7[$\mu\textrm{m}$] were fabricated by using the actual CMOS 1 [Mbit] process technology. The charateristics of I$\_$D/-V$\_$D/, I$\_$D/-V$\_$G/ were investigated and compared with the channel width and length. From the result of measuring the I$\_$D/-V$\_$D/ charges into the nitride layer by applying the gate voltage, these devices ere found to have a low conductance state with little drain current and a high conductance state with much drain current. It was shown that the devices of 15[$\mu\textrm{m}$]${\times}$15[$\mu\textrm{m}$] represented the long channel characteristics and the devices of 15[$\mu\textrm{m}$]${\times}$1.5[$\mu\textrm{m}$] and 1.9[$\mu\textrm{m}$]${\times}$1.7[$\mu\textrm{m}$] represented the short channel characteristics. In the characteristics of I$\_$D/-V$\_$D/, the critical threshold voltages of the devices were V$\_$w/ = +34[V] at t$\_$w/ = 50[sec] in the low conductance state, and the memory window sizes wee 6.3[V], 7.4[V] and 3.4[V] at the channel width and length of 15[$\mu\textrm{m}$]${\times}$15[$\mu\textrm{m}$], 15[$\mu\textrm{m}$]${\times}$1.5[$\mu\textrm{m}$], 1.9[$\mu\textrm{m}$]${\times}$1.7[$\mu\textrm{m}$], respectively. The positive logic conductive characteristics are suitable to the logic circuit designing.

• 한국전기전자재료학회논문지
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• 제28권10호
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• pp.665-669
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• 2015

We investigated and compared two methods of in-situ oxidation and chemical etching treatment (CET) to remove the boron rich layer (BRL). The BRL is generally formed during boron doping process. It has to be controlled in order not to degrade carrier lifetime and reduce electrical properties. A boron emitter is formed using $BBr_3$ liquid source at $930^{\circ}C$. After that, in-situ oxidation was followed by injecting oxygen of 1,000 sccm into the furnace during ramp down step and compared with CET using a mixture of acid solution for a short time. Then, we analyzed passivation effect by depositing $Al_2O_3$. The results gave a carrier lifetime of $110.9{\mu}s$, an open-circuit voltage ($V_{oc}$) of 635 mV at in-situ oxidation and a carrier lifetime of $188.5{\mu}s$, an $V_{oc}$ of 650 mV at CET. As a result, CET shows better properties than in-situ oxidation because of removing BRL uniformly.

• Current Photovoltaic Research
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• 제3권1호
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• pp.32-38
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• 2015

CIGS solar cell consisted of various films. In this research, we investigated electrode materials in $Cu(In,Ga)Se_2$ (CIGS) cells, including Al-doped ZnO (ZnO:Al), intrinsic ZnO (i-ZnO), and Al films. The sputtered ZnO:Al film with a sputtering power at 200W showed the lowest series resistance and highest cell efficiency. The electrical resistivity of the 200-W sputtered ZnO:Al film was $5.2{\times}10^{-4}{\Omega}{\cdot}cm$ by the rapid thermal annealing at $200^{\circ}C$ for 1 min. The electrical resistivity of i-ZnO was not measurable due to its high resistance. But the optical transmittance was highest with less oxygen supply and high efficiency cell was achieved with $O_2/(Ar+O_2)$ ratio was 1% due to the increase of short-circuit current. No significant change in the cell performance by inserting a Ni layer between Al and ZnO:Al films was observed.

• The Korean Journal of Physiology and Pharmacology
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• 제5권3호
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• pp.231-241
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• 2001

The mammalian cortical collecting duct (CCD) plays a major role in regulating renal NaCl reabsorption, which is important in $Na^+$ and $Cl^-$ homeostasis. The M-1 cell line, derived from the mouse cortical collecting duct, has been used as a mammalian model of the study on the electrolytes transport in CCD. M-1 cells were grown on collagen-coated permeable support and short circuit current $(I_{sc})$ was measured. M-1 cells developed amiloride-sensitive current $5{\sim}7$ days after seeding. Apical and basolateral addition of ATP induced increase in $I_{sc}$ in M-1 cells, which was partly retained in $Na^+-free$ or $Cl^--free$ solution, indicating that ATP increased $Na^+$ absorption and $Cl^-$ secretion in M-1 cells. $Cl^-$ secretion was mediated by the activation of apical cystic fibrosis transmembrane regulator (CFTR) chloride channels and $Ca^{2+}-activated$ chloride channels, but $Na^+$ absorption was not mediated by activation of epithelal sodium channel (ENaC). ATP increased cAMP content in M-1 cells. The RT-PCR analysis demonstrated that M-1 cells express $P2Y_2,\;P2X_3\;and\;P2Y_4$ receptors. These results showed that ATP regulates $Na^+$ and $Cl^-$ transports via multiple P2 purinoceptors on the apical and basolateral membranes in M-1 cells.

• Journal of Welding and Joining
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• 제18권2호
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• pp.196-196
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• 2000

Formation of the weld defect, such as a blowhole and a pit in lap-jointed fillet arc welds has been a serious problem in arc welding of Zn-coated steel sheet. In this study, the relationship among welding conditions, welding materials and defect formation was investigated in order to minimize these defects in the CO₂ welds. In addition, the arc stability of the commercial welding wires was evaluated for revealing their effects on defect formation. Main conclusions obtained are as follows:1) There was no difference between shear tensile strength of the sound welds and that of the welds with blowholes whose diameters are less than 0.5mm. However, the welds with blowholes whose diameters are equal or larger than 0.5mm and pits exhibited tensile strength 10~20% and 30~40% lower than that of the sound welds respectively.2) The optimum welding condition to effectively prevent or reduce the weld defects formation are as follows:- The welding variables of 220A-23V-100cm/min and 120A-190V-30cm/min were recommended for minimizing the weld defects.- The gap between the two sheets at the lap-joint should be controlled to more than 0.2mm- Solid wire was less susceptible to the formation of the weld defects than the flux-cored wire.- The low welding current condition produced less weld defects than the hihg welding current condition.3) One of the reason why the amount of the defect was reduced at the low welding current was the gas discharging by the active agitation of the molten pool, due to an increasing in the number of the short circuit. (Received September 27, 1999)

• Journal of Welding and Joining
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• 제18권2호
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• pp.69-76
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• 2000

Formation of the weld defect, such as a blowhole and a pit in lap-jointed fillet arc welds has been a serious problem in arc welding Zn-coated steel sheet. In this study, the relationship among welding conditions, welding materials and defect formation was investigated in order to minimize these defects in the CO₂welds. In addition, the arc stability of the commercial welding wires was evaluated for revealing their effects on defect formation. Main conclusions obtained are as follows: 1) There was no difference between shear tensile strength of the sound welds and that of the welds with blowholes whose diameters are less than 0.5mm. However, the welds with blowholes whose diameters are equal or large than 0.5mm and pits exhibited tensile strength 10∼ 20% and 30∼40% lower than that of the sound welds respectively. 2) The optimum welding condition to effectively prevent or reduce the weld defects formation are as follows: -The welding variables of 220A-23V-100cm/min and 120A-19V-30cm/min were recommended for minimizing the weld defects. -The gap between the two sheets at the lap-joint should be controlled to more than 0.2mm. -Solid wire was less susceptible to the formation of the weld defects than the flux-cored wire. -The low welding current condition produced less weld defects than the high welding current condition. 3) One of the reason why the amount of the defect was reduced at the low welding current was the gas discharging by the active agitation of the molten pool, due to an increasing in the number of the short circuit.