Current Photovoltaic Research

  • 제3권1호
  • /
  • Pages.32-38
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  • 2015
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  • 2288-3274(pISSN)
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  • 2508-125X(eISSN)
한국태양광발전학회 (Korea Photovoltaic Society)
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Al 그리드와 ZnO 투명전도막 의 공정변화에 따른 Cu(In,Ga)Se2 박막태양전지의 특성 연구

Effect of Process Variation of Al Grid and ZnO Transparent Electrode on the Performance of Cu(In,Ga)Se2 Solar Cells

  • 조보환 (한국과학기술원 신소재공학과) ;
  • 김선철 (한국과학기술원 신소재공학과) ;
  • 문선홍 (한국과학기술원 신소재공학과) ;
  • 김승태 (한국과학기술원 신소재공학과) ;
  • 안병태 (한국과학기술원 신소재공학과)
  • Cho, Bo Hwan (Department of Materials Science and Engineering, KAIST) ;
  • Kim, Seon Cheol (Department of Materials Science and Engineering, KAIST) ;
  • Mun, Sun Hong (Department of Materials Science and Engineering, KAIST) ;
  • Kim, Seung Tae (Department of Materials Science and Engineering, KAIST) ;
  • Ahn, Byung Tae (Department of Materials Science and Engineering, KAIST)
  • 투고 : 2015.02.15
  • 심사 : 2015.02.23
  • 발행 : 2015.03.31
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초록

CIGS solar cell consisted of various films. In this research, we investigated electrode materials in $Cu(In,Ga)Se_2$ (CIGS) cells, including Al-doped ZnO (ZnO:Al), intrinsic ZnO (i-ZnO), and Al films. The sputtered ZnO:Al film with a sputtering power at 200W showed the lowest series resistance and highest cell efficiency. The electrical resistivity of the 200-W sputtered ZnO:Al film was $5.2{\times}10^{-4}{\Omega}{\cdot}cm$ by the rapid thermal annealing at $200^{\circ}C$ for 1 min. The electrical resistivity of i-ZnO was not measurable due to its high resistance. But the optical transmittance was highest with less oxygen supply and high efficiency cell was achieved with $O_2/(Ar+O_2)$ ratio was 1% due to the increase of short-circuit current. No significant change in the cell performance by inserting a Ni layer between Al and ZnO:Al films was observed.

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