• Title/Summary/Keyword: Shift constant

Search Result 354, Processing Time 0.234 seconds

Excited State Proton Transfers and Subsequent Electron Rearrangement of Aqueous 6-Hydroxyquinoline

  • 유현웅;권혁진;장두전
    • Bulletin of the Korean Chemical Society
    • /
    • 제18권2호
    • /
    • pp.156-161
    • /
    • 1997
  • Aqueous 6-hydroxyquinoline in the first excited singlet state undergoes protonation to the imine group first in 15 ps, then in the time scale of 40 ps deprotonation from the enol group and finally, however, quickly as in 11 ps electron rearrangement to change into a resonance hybrid structure of quinoid-prevailing forms. Despite the fact that the decay time constant is smaller than the formation time constant, fluorescence from excited protropic zwitterion is observed to assign its maximum at 510 nm. The electron rearrangement is basically an intramolecular charge transfer from the deprotonated oxygen atom to the positively charged iminium ring without any notable change in nuclear geometry, producing a zwitterionic quinoid structure with much a smaller electric dipole moment than the zwitterionic protropic species. This photoproduct formed by consecutive excited state proton and electron transfers shows a smaller dipole moment in S1 than in S0 and a hypsochromic shift although its S1 state has (π, π*) character.

Convolutional Code/Binary CPFSK 복합 전송시스템의 성능개선에 관한 연구 (Performance Improvement on the Combined Convolutional Coding and Binary CPFSK Modulation)

  • 최양호;백제인;김재균
    • 대한전자공학회논문지
    • /
    • 제23권5호
    • /
    • pp.591-596
    • /
    • 1986
  • A binary continuous phase frequency shift keying (CPFSK), whose phase is a continuous function of time and instantaneous frequency is constant, is a bandwidth efficient constant envelope signalling scheme. A transmitting signal is formed by combined coding of a convolutional encoder and a binary CPFSK modulator. The signal is transmitted throuth additive white Gaussian noise(AWGN) channel. If the received signal is detected by a coherent maximum likelihood(ML) receiver, error probability can be expressed approximately in terms of minimum Euclidean distance. We propose rate 2/4 codes for the improvement of error performance without increating the data rate per bandwidth and the receiver complexity. Its minimum Euclidean distances are compared with those of rate \ulcornercodes as a function of modulation index and observation interval.

  • PDF

An experimental study on the cooling performance and the phase shift between piston and displacer in the Stirling cryocooler

  • Park, S. J.;Y. J. Hong;Kim, H. B.;D. Y. Koh;B. K. Yu;Lee, K. B.
    • 한국초전도ㆍ저온공학회논문지
    • /
    • 제5권1호
    • /
    • pp.111-117
    • /
    • 2003
  • In the design of the split type free displacer Stilting cryocooler the motion of the displacer is very important to decide the cooling capacity, which depends upon the working gas pressure, the swept volume in the compression space and the expansion space, operating frequency, the phase shift between piston and displacer, etc. In this study, Stirling cryocooler actuated by the electric farce of the dual linear motor is designed and manufactured. Cool down characteristics of the cold end with laser displacement sensor in the expander of the Stilting cryocooler is evaluated. The charging pressure was 15kg$_{f}$/$\textrm{cm}^2$ and operating frequency was 50Hz. Input power and the lowest temperature were about 32W and 67K, respectively. And, displacement of the piston is measured by LVDTs (Linear Variable Differential Transformers), displacement of thedisplacer is measured by laser optic method, and phase shift between piston and displacer is discussed. As the peak-to-peak pressure of the compressor was increased, peak-to-peak displacement of the displacer was increased. The peak-to-peak displacement of the displacer increases in the range of 0 - 64.5Hz(resonant frequency of the displacer), but decreases steeply when the operating frequency is bigger than the resonant frequency. Finally when the phase shift between displacements of the Piston and displacer is 45。, operating frequency is optimum and is decided by resonant frequency of the expander, mass and cross section area of the displacer and constant by friction and flow resistance.e.

기계적 합금화한 Fe계 분말 특성에 관한 뫼스바우어 분광학적 연구 (Mössbauer Study on Crystallographic and Magnetic Properties of Mechanical Alloying Fe-M(M=Cr, Mn, Cu, Zn) Powders)

  • 박재윤;최재주
    • 한국자기학회지
    • /
    • 제17권1호
    • /
    • pp.26-29
    • /
    • 2007
  • 비 평형 시료제조법으로 잘 알려진 기계적 합금법을 이용하여 Fe(Fe-Cr, Fe-Mn, Fe-Cu, Fe-Zn)계 분말을 제조하였다. 일정한 당량비를 갖는 Fe와 전이금속원소 M(Cr, Mn, Cu, Zn)분말을 Ar 분위기에서 볼밀을 사용하여 수주에 걸친 기계적 합금을 시행하였다. 분쇄시간에 대한 Fe계 분말들의 결정 구조적 및 초미세 자기적 특성 변화를 X선 회절기와 $M\"{o}ssbauer$ 분광계를 이용하여 관찰하였다. X-선 회절실험 결과 밀링시간의 진행에 따라 합금이 발생되고 격자 상수값은 전이금속원자 M의 Fe원자 치환에 따라 증가하였다. Fe원자 주위의 국소적 원자분포의 영향을 조사하기 위한 $M\"{o}ssbauer$ 분광실험에서 밀링시간의 경과와 더불어 강자성 상에 대한 공명 흡수선들의 평균선폭은 증가되었고 상자성 상 역시 관측 되었다. 치환에 의한 Fe 원자간 거리증가는 초미세 자기장값은 분산된 값을 가져왔으며, quadrupole shift와 isomer shift의 결과는 M 치환으로 Fe의 결정구조와 국부적 전하분포의 변화가 크게 일어나지 않음을 보여준다.

A MEIS Study on Ge Eppitaxial Growth on Si(001) with dynamically supplied Atomic Hydrogen

  • Ha, Yong-Ho;Kahng, Se-Jong;Kim, Se-Hun;Kuk, Young;Kim, Hyung-Kyung;Moon, Dae-Won
    • 한국진공학회:학술대회논문집
    • /
    • 한국진공학회 1998년도 제14회 학술발표회 논문개요집
    • /
    • pp.156-157
    • /
    • 1998
  • It is a diffcult and challenging pproblem to control the growth of eppitaxial films. Heteroeppitaxy is esppecially idfficult because of the lattice mismatch between sub-strate and depposited layers. This mismatch leads usually to a three dimensional(3D) island growth. But the use of surfactants such as As, Sb, and Bi can be beneficial in obtaining high quality heteroeppitaxial films. In this study medium energy ion scattering sppectroscoppy(MEIS) was used in order to reveal the growth mode of Ge on Si(001) and the strain of depposited film without and with dynamically supplied atomic hydrogen at the growth thempperature of 35$0^{\circ}C$. It was ppossible to control the growth mode from layer-by-layer followed by 3D island to layer-by-layer by controlling the hydrogen flux. In the absent of hydro-gen the film grows in the layer-by-layer mode within the critical thickness(about 3ML) and the 3D island formation is followed(Fig1). The 3D island formation is suppressed by introducing hydrogen resulting in layer-by-layer growth beyond the critical thickness(Fig2) We measured angular shift of blocking dipp in order to obtain the structural information on the thin films. In the ppressence of atomic hydrogen the blocking 야 is shifted toward higher scattering angle about 1。. That means the film is distorted tetragonally and strained therefore(Fig4) In other case the shift of blocking dipp at 3ML is almost same as pprevious case. But above the critical thickness the pposition of blocking dipp is similar to that of Si bulk(Fig3). It means the films is relaxed from the first layer. There is 4.2% lattice mismatch between Ge and Si. That mismatch results in about 2。 shift of blocking dipp. We measured about 1。 shift. This fact could be due to the intermixing of Ge and Si. This expperimental results are consistent with Vegard's law which says that the lattice constant of alloys is linear combination of the lattic constants of the ppure materials.

  • PDF

위상이동 방법에 의한 Pd/LiOH 전해질 계면의 전극속도론적 패러미터 해설 (Analysis on the Electrode Kinetic Parameters at the Pd/LiOH Electrolyte Interface using the Phase-shift Method)

  • 천장호;문경현;조성칠;손광철
    • 전기화학회지
    • /
    • 제2권2호
    • /
    • pp.70-74
    • /
    • 1999
  • 위상이동 방법을 이용하여 Pd/0.5 M LiOH전해질 계면의 전극속도론적 패러미터를 정성적으로 해석하였다. 위상이동$(\phi)$은 음전위(E<0) 주파수(f)에 따르며, Pd음극에 흡착된 수소원자$(H_{ads})$의 표면피복율$(\theta)$ 반비례한다. 중간주파수 (10 Hz)에서 위상이동 변화$(\phi\;vs.\;E)$는 Frumkin흡착등온식$(\theta\;vs.\;E)$의 계산 및 도시에 사용할 수 있는 실험적인 방법이다. Pd/0.5 M LiOH전해질 계면에서 $1>{\theta}>0$에 따른 흡착자유에너지변화율(r),흡착평형상수(K),표준자유에너지$({\Delta}G_{\theta})$는 각각 22.3kJ/mol, $3.7\times10^{-3}{\Delta}G_{\theta}>-8.4kJ/mol$이다. 1$0.38>\theta>0$ 범위에서 수소원자 흡수에 기인한 에너지 방출 즉 발열반응이 Pd음극에서 있다. 전극속도론적 패러미터$(r,\;K,\;{\Delta}G_{\theta}$는 표면피복율$({\theta})$ 또는 위상이동$(\phi)$에 따른다.

배양액의 pH가 Aureobasidium pullulans의 풀루란 생성과 형태에 미치는 영향 (Effects of pH on the Elaboration of Pullulan and the Morphology of Aureobasidium pullulans)

  • 신용철;변시명
    • 한국미생물·생명공학회지
    • /
    • 제19권2호
    • /
    • pp.193-199
    • /
    • 1991
  • The effects of pH on the cell growth, the elaboration of pullulan, and the morphology of Aureobasidium pullulans IFO 4464 were examined. A. pulluans grew in yeast-like form at constant pH7.5 and in mycelial form at constant pH2.5. At the both pH conditions, the elaboration of pullulan was very low, about 6.0~6.5g/l. The mixture of yeast-like form and mycelial form of cells was found at the constant pH4.5, at which condition, the elaboration of pullulan was high, about 24.5g/l. The pH shift experimemts showed that the specific production rates of pullulan were 0.048($hr^{-1}$)for the mycelial form and 0.058($hr^{-1}$)for the yeast like form, which indicated that the yeast-like form has the similar, only slightly higher, biosynthetic activity of pullulan to the mycelial form at pH4.5 and the pH of culture broth is more important factor for the elaboration of pullulan than the morphology of A. pullulans.

  • PDF

점구분 분광술 여기 방식과 나선형 판독경사를 이용한 삼차원 화학적 변위 영상법의 개발 (Three-dimensional Chemical Shift Imaging with PRESS Excitation and Spiral Readouts)

  • 김동현
    • Investigative Magnetic Resonance Imaging
    • /
    • 제12권1호
    • /
    • pp.27-32
    • /
    • 2008
  • 목적: 점구분-분광술을 이용한 여기법과 나선형 판독경사를 이용하여 삼차원 화학적변위영상을 개발하고자 하였다. 대상 및 방법: 상수 밀도를 갖는 나선형 판독경사를 디자인하는 분석식을 이용하여 스캐너에서 실시간으로 각종 지표들을 바꿀수 있도록 개발하였다 ($32{\times}32$ 행렬, $24{\times}24\;cm$ FOV). 생체내 뇌 데이터를 수집하였고 그리딩 알고리즘을 이용하여 분광학 영상을 재구성하였다. 결과: 본 연구에서 개발한 영상 기법을 이용하면, 점구분 분광술의 이점인 뇌 표면의 지방의 신호를 제거하면서 나선형 패턴이 갖는 장점들을 이용할 수 있다. 나선형 샘플링은 영상을 얻는데 걸리는 시간과 영상의 해상도를 자유로이 조절할 수 있는 유연성을 가지고 있다. 삼차원 고해상도 점구분-분광술 영상을 $5760\;cm^3$의 공간에서 얻는데 걸리는 총 시간이 12.5 분이었다. 결론: 점구분 분광술과 나선형 샘플링을 결합하여 삼차원 화학적 변위 영상을 얻는 새로운 방법을 개발하였다. 이를 통해 넓은 공간을 확보하며 동시에 지방 신호를 제거하는 기법을 사용할수 있게 되었다.

  • PDF

나노결정 InGaZnO 산화물 박막트랜지스터와 비결정 InGaZnO 산화물 박막트랜지스터의 소자 신뢰성에 관한 비교 연구 (Comparison of Stability on the Nano-crystalline Embedded InGaZnO and Amorphous InGaZnO Oxide Thin-film Transistors)

  • 신현수;안병두;임유승;김현재
    • 한국전기전자재료학회논문지
    • /
    • 제24권6호
    • /
    • pp.473-479
    • /
    • 2011
  • In this paper, we have compared amorphous InGaZnO (a-IGZO) thin-film transistor (TFT) with the nano-crystalline embedded-IGZO ($N_c$-embedded-IGZO) TFT fabricated by solid-phase crystallization (SPC) technique. The field effect mobility (${\mu}_{FE}$) of $N_c$-embedded-IGZO TFT was 2.37 $cm^2/Vs$ and the subthreshold slope (S-factor) was 0.83 V/decade, which showed lower performance than those of a-IGZO TFT (${\mu}_{FE}$ of a-IGZO was 9.67 $cm^2/Vs$ and S-factor was 0.19 V/decade). This results originated from generation of oxygen vacancies in oxide semiconductor and interface between gate insulator and semiconductor due to high temperature annealing process. However, the threshold voltage shift (${\Delta}V_{TH}$) of $N_c$-embedded-IGZO TFT was 0.5 V, which showed 1 V less shift than that of a-IGZO TFT under constant current stress during $10^5$ s. This was because there were additionally less increase of interface trap charges in Nc-embedded-IGZO TFT than a-IGZO TFT.

위상이동 방법에 의한 다결정 $Ir/H_2SO_4$ 수성 전해질 계면에서 과전위 수소흡착에 관한 해석 (An Analysis on the Over-Potentially Deposited Hydrogen at the Polycrystalline $Ir/H_2SO_4$ Aqueous Electrolyte Interface Using the Phase-Shift Method)

  • 천장호;문경현
    • 전기화학회지
    • /
    • 제3권2호
    • /
    • pp.109-114
    • /
    • 2000
  • 다결정 $Ir/H_2SO_4$수성 전해질 계면에서 중간주파수 구간의 위상이동 변화와 Langmuir흡착등온식 사이의 관계를 교류임피던스 방법 즉 위상이동 방법을 이용하여 연구 조사하였다. 간소화된 계면 등가회로는 전해질저항(Rs), Faraday저항$(R_F)$, 흡착유사용량$(C_\phi)$ 등가회로 요소$(C_P)$의 직렬접속으로 구성된다. 음전위(E)에 대한 위상이동$(-\phi)$과 표면피복율$(\theta)$ 변화율$[\Delta(-\phi)/{\Delta}E,\;{\Delta}{\theta}/{\Delta}E]$을 비교 및 제시하였다. 지연되는 위상이동$(-\phi)$은 음전위(E) 및 주파수(f)에 따르며, $\phi=tan^{-1}[1/2{\pi}f(R_s+R_F)C_P]$이다. 중간주파수(1 Hz)에서 위상이동 변화$(-\phi\;vs.\;E)$는 Langmuir흡착등온식 $(\theta\;vs.\;E)$의 결정에 적용할 수 있는 실험적인 방법이다. 다결정 Ir/0.1 M $H_2SO_4$ 전해질 계면에서 수소의 흡착평형상수(K)와 흡착표준자유에너지 $({\Delta}G_{ads})$는 각각 $2.0\times10^{-4}$와 21.1kJ/mol이며 과전위 수소흡착(OPD H)에 기인한다.