• Title/Summary/Keyword: Sharp-Edge

Search Result 189, Processing Time 0.023 seconds

FINITE ELEMENT ANALYSIS OF STRESS DISTRIBUTION ACCORDING TO CAVITY DESIGN OF CLASS V COMPOSITE RESIN FILLING (5급와동의 복합레진 충전에 관한 유한요소법적 응력분석)

  • Um, Chung-Moon;Kwon, Hyuk-Choon;Son, Ho-Hyun;Cho, Byeong-Hoon;Rim, Young-Il
    • Restorative Dentistry and Endodontics
    • /
    • v.24 no.1
    • /
    • pp.67-75
    • /
    • 1999
  • The use of composite restorative materials is established due to continuing improvements in the materials and restorative techniques. Composite resins are widely used for the restoration of cervical lesions because of esthetics, good physical properties and working time. There are several types of cavity design for class V composite resin filling, but inappropriate cavity form may affect bonding failure, microleakage and fracture during mastication. Cavity preparations for composite materials should be as conservative as possible. The extent of the preparation is usually determined by the size, shape, and location of the defect. The design of the cavity preparation to receive a composite restoration may vary depending on several factors. In this study, 5 types of class V cavity were prepared on each maxillary central incisor. The types are; 1) V-shape, 2) round(U) shape, 3) box form, 4) box form with incisal bevel and 5) box form with incisal bevel and grooves for axial line angles. After restoration, in order to observe the concentration of stress at bonding surfaces of teeth and restorations, developing a 2-dimensional finite element model of labiopalatal section in tooth, surrounding bone, periodontal ligament and gingiva, based on the measurements by Wheeler, loading force from direction of 45 degrees from lingual side near the incisal edge was applied. This study analysed Von Mises stress with SuperSap finite element analysis program(Algor Interactive System, Inc.). The results were as follows : 1. Stress concentration was prevalent at tooth-resin bonding surface of cervical side on each model. 2. In model 2 without line angle, stress was distributed evenly. 3. Preparing bevel eliminated stress concentration much or less at line angle. 4. Model with round-shape distributed stress concentration more evenly than box-type model with sharp line angle, therefore decreased possibility of fracture. 5. Adding grooves to line angles had no effect of decreasing stress concentration to the area.

  • PDF

Peripheral Dose Distributions of Clinical Photon Beams (광자선에 의한 민조사면 경계영역의 선량분포)

  • 김진기;김정수;권형철
    • Progress in Medical Physics
    • /
    • v.12 no.1
    • /
    • pp.71-77
    • /
    • 2001
  • The region, near the edge of a radiation beam, where the dose changes rapidly according to the distance from the beam axis is known as the penumbra. There is a sharp dose gradient zone even in megavoltage photon beams due to source size, collimator, lead alloy block, other accessories, and internal scatter ray. We investigate dosimetric characteristics on penumbra regions of a standard collimator and compare to those of theoritical model for the optimal use of the system in radiotherapy. Peripheral dose distribution of 6 W Photon beams represents penumbral forming function as the depth. Also we have discussed that the peripheral dose distribution of clinical photon beams, differences between calculation dose use of emperical penumbral forming function and measurements in penumbral region. Predictions by emperical penumbral forming functions are compared with measurements in 3-dimensional water phantom and it is shown that the method is capable of reproduceing the measured peripheral dose values usually to within the statistical uncertainties of the data. The semiconductor detector and ion chamber were positioned at a dmax depth, 5cm depth, 10cm depth, and its specific ratio was determined using a scanning data. The effective penumbra, the distance from 80% to 20% isodose lines were analyzed as a function of the distance. The extent of penumbra will also expand with depth increase. Difference of measurement value and model functions value according to character of the detector show small error in dose distribution of the peripheral dose.

  • PDF

A study of the photoluminescence of undoped ZnO and Al doped ZnO single crystal films on sapphire substrate grown by RF magnetron sputtering (RF 스퍼터링법으로 사파이어 기판 위에 성장한 ZnO와 ZnO : A1 박막의 질소 및 수소 후열처리에 따른 Photoluminescence 특성)

  • Cho, Jung;Yoon, Ki-Hyun;Jung, Hyung-Jin;Choi, Won-Kook
    • Korean Journal of Materials Research
    • /
    • v.11 no.10
    • /
    • pp.889-894
    • /
    • 2001
  • 2wt% $Al_2O_3-doped$ ZnO (AZO) thin films were deposited on sapphire (0001) single crystal substrate by parellel type rf magnetron sputtering at 55$0^{\circ}C$. The as-grown AZO thin films was polycrystalline and showed only broad deep defect-level photoluminescence (PL). In order to examine the change of PL property, AZO thin films were annealed in $N_2$ (N-AZO) and $H_2$ (H-AZO) at the temperature of $600^{\circ}C$~$1000^{\circ}C$ through rapid thermal annealing. After annealed at $800^{\circ}C$, N-AZO shows near band edge emission (NBE) with very small deep-level emission, and then N-AZO annealed at $900^{\circ}C$ shows only sharp NBE with 219 meV FWHM. In Comparison with N-AZO, H-AZO exhibits very interesting PL features. After $600^{\circ}C$ annealing, deep defect-level emission was quire quenched and NBE around 382 nm (3.2 eV) was observed, which can be explained by the $H_2$passivation effect. At elevated temperature, two interesting peaks corresponding to violet (406 nm, 3.05 eV) and blue (436 nm, 2.84 eV) emission was firstly observed in AZO thin films. Moreover, peculiar PL peak around 694 nm (1.78 eV) is also firstly observed in all the H-AZO thin films and this is believed good evidence of hydrogenation of AZO. Based on defect-level scheme calculated by using the full potential linear muffin-tin orbital (FP-LMTO), the emission 3.2 eV, 3.05 eV, 3.84 eV and 1.78 eV of H-AZO are substantially deginated as exciton emission, transition from conduction band maximum to $V_{ Zn},$ from $Zn_i$, to valence band maximum $(V_{BM})$ and from $V_{o} to V_BM}$, respectively.

  • PDF

High Frequency Noise Reduction in ECG using a Time-Varying Variable Cutoff Frequency Lowpass Filter (시변 가변차단주파수 저역통과필터를 이용한 심전도 고주파 잡음의 제거)

  • 최안식;우응제;박승훈;윤영로
    • Journal of Biomedical Engineering Research
    • /
    • v.25 no.2
    • /
    • pp.137-144
    • /
    • 2004
  • ECG signals are often contaminated with high-frequency noise such as muscle artifact, power line interference, and others. In the ECG signal processing, especially during a pre-processing stage, numerous noise removal techniques have been used to reduce these high-frequency noise without much distorting the original signal. This paper proposes a new type of digital filter with a continuously variable cutoff frequency to improve the signal quality This filter consists of a cutoff frequency controller (CFC) and variable cutoff frequency lowpass filter (VCF-LPF). From the noisy input ECG signal, CFC produces a cutoff frequency control signal using the signal slew rate. We implemented VCF-LPF based on two new filter design methods called convex combination filter (CCF) and weight interpolation fille. (WIF). These two methods allow us to change the cutoff frequency of a lowpass filter In an arbitrary fine step. VCF-LPF shows an excellent noise reduction capability for the entire time segment of ECG excluding the rising and falling edge of a very sharp QRS complex. We found VCF-LPF very useful and practical for better signal visualization and probably for better ECG interpretation. We expect this new digital filter will find its applications especially in a home health management system where the measured ECG signals are easily contaminated with high-frequency noises .

Property of Silica and Fine Structure of Cosmetic White Powders (화장품에 사용되는 백색분체의 미세구조와 실리카의 특성)

  • Jeon, Myung-Ok;Chang, Byung-Soo
    • Applied Microscopy
    • /
    • v.42 no.2
    • /
    • pp.87-93
    • /
    • 2012
  • In this study, fine structures of silica, titanium dioxide, talc and kaolin used in decorative cosmetics and the mixture extracted from BB cream cosmetics were observed by scanning electron microscopy. Kaolin had plate like shape structures of polygon with smooth surface and edge of kaolin had a relatively smooth appearance in comparison with talc. Also, thickness of each layer was estimated to about $0.1{\mu}M$ in the lump formed in stratum of several layers. Talc was observed by lumps shape phase of layering very thin flake. Boundary of thin flake was sharp or angular phase and thickness of flake was approximately 600 nm in diameter. When comparing the thickness of kaolin and talc, we was confirmed that kaolin was thicker than talc. Diameter of titanium dioxide was estimated to 0.2~0.3 ${\mu}M$ and surface of particle was a soft cubic form. Silica was confirmed that variety of size from 200 nm to $15{\mu}M$ of globular shape was measured. From the observation of inorganic pigments, silica was homogeneous dispersed in the BB cream cosmetics and among each other was filled with relatively small size like talc, kaolin, titanium dioxide and iron oxide. In conclusion, we suggest that silica at decorative cosmetics were formed in cosmetic coat at the skin as the minimum thickness.

Growth and electrical properties of $MgTiO_3$ thin films ($MgTiO_3$산화물 박막의 성장 및 전기적 특성 연구)

  • 강신충;임왕규;안순홍;노용한;이재찬
    • Journal of the Korean Vacuum Society
    • /
    • v.9 no.3
    • /
    • pp.227-232
    • /
    • 2000
  • $MgTiO_3$thin films have been grown on various substrates by pulsed laser deposition (PLD) to investigate the application for microwave dielectrics and optical devices. Epitaxial $MgTiO_3$thin films were obtained on sapphire (c-plane$A1_2O_3$$MgTiO_3$thin films deposited on $SiO_2/Si$ and platinized silicon ($Pt/Ti/SiO_2/Si$) substrates were highly oriented. $MgTiO_3$thin films grown on sapphire were transparent in the visible and had a sharp absorption edge about 290 nm. These $MgTiO_3$thin films had extremely fine feature of surface morphology, i.e., rms roughness of 0.87 nm, which was examined by AFM. We have investigated the dielectric properties of the $MgTiO_3$thin films in $MIM(Pt/MgTiO_3/Pt)$ capacitors. Dielectric constant and loss of $MgTiO_3$thin films deposited by PLD were about 24 and 1.5% at 1 MHz, respectively. These $MgTiO_3$thin films also exhibited little dielectric dispersion.

  • PDF

Annealing Effects on Properties of ZnO Nanorods Grown by Hydrothermal Method (수열합성법으로 성장된 산화아연 나노막대의 특성 및 열처리 효과)

  • Jeon, Su-Min;Kim, Min-Su;Kim, Ghun-Sik;Cho, Min-Young;Choi, Hyun-Young;Yim, Kwang-Gug;Kim, Hyeoung-Geun;Lee, Dong-Yul;Kim, Jin-Soo;Kim, Jong-Su;Lee, Joo-In;Leem, Jae-Young
    • Journal of the Korean Vacuum Society
    • /
    • v.19 no.4
    • /
    • pp.293-299
    • /
    • 2010
  • Vertically aligned ZnO nanorods on Si (111) substrate were prepared by hydrothermal method. The ZnO nanorods on spin-coated seed layer were synthesized at $140^{\circ}C$ for 6 hours in autoclave and were thermally annealed in argon atmosphere for 20 minutes at temperature of 300, 500, $700^{\circ}C$. The effects of the thermal annealing on the structural and optical properties of the grown on ZnO nanorods were investigated by X-ray diffraction (XRD), field-emission scanning electron microscopy (FE-SEM), photoluminescence (PL). All the ZnO nanorods show a strong ZnO (002) and weak (004) diffraction peak, indicating c-axis preferred orientation. The residual stress of the ZnO nanorods is changed from compressive to tensile by increasing annealing temperature. The hexagonal shaped ZnO nanorods are observed. The PL spectra of the ZnO nanorods show a sharp near-band-edge emission (NBE) at 3.2 eV, which is generated by the free-exciton recombination and a broad deep-level emission (DLE) at about 2.12~1.96 eV, which is caused by the defects in the ZnO nanorods. The intensity of the NBE peak is decreased and the DLE peak is red-shifted due to oxygen-related defects by thermal annealing.

The study on the formation and influence about the epigraph form the Bal-Hae Dynasty (발해 묘지(墓誌) 양식의 형성배경과 영향)

  • Park, Jae bok
    • (The)Study of the Eastern Classic
    • /
    • no.34
    • /
    • pp.225-255
    • /
    • 2009
  • Few data on the epigraph from the Bal-Hae Dynasty have been reported so far. The present paper, based on an examination of the style of the epitaphic tombstones of Princess Jeong-Hye and Princess Jeong-Hyo, investigates the historical formation and characteristics of Balhae's epitaphic style and its influences on the posterior periods. The epitaphs from the Bal-Hae Dynasty have the following epigraphic characteristics and historical significances. First, Bal-Hae's epitaphs are similar to those from the Goguryeo Dynasty in the sense that they are angular in their form. Tombstones with angular head first appeared during the East Han period. During the Wi-Jin period, however, as tombstones were not allowed to be erected in front of the tomb, small-sized epitaphic tombstones were set up inside tombs. Typical tombstones from the Dang Dynasty had stone pole and square cover. Unlike those from the Dang and the Tong-Il Silla Dynasties, however, the epitaphs from Bal-Hae had angular head in their tombstone body. The Bal-Hae's angular headed tombstones are very likely to testify that Goguryeo's epitaphs, which features an influence from the Wi-Jin Nambuk-Jo period, in turn exerted an effect on those from the Bal-Hae Dynasty. Second, Bal-Hae's epitaphic tombstones are characterized by their hexagonal head,which were modified from the then typical pentagonal head by cutting out the sharp point. The hexagonal head, which has not been found in its neighboring countries during the same historical period, is peculiar to the epitaphic tombstones from the Bal-Hae Dynasty. Third, the edge lines and ornamental figures first appeared in Bal-Hae's epitaphic tombstones, as seen in those of Princess Jeong-Hye. In the fa?ade of the epitaphic tombstone, a carved line demarcates its rectangular body and trapezoidal head. Four faces of the body stonehave two parallel lines in their edges within which vignette was inscribed, and the trapezoidal head part was ornamented with flower figures. Fourth, Bal-Hae's epitaphic tombstone had an extensive influence on the posterior countries in its neighborhood. The epitaphic tombstones in the Bal-Hae style are very often found in those of the Goryeo Dynasty and the Yo Dynasty which were greatly influenced from Bal-Hae. The vestiges of Bal-Hae's epitaphic style are also found in those from the Song, the Geum, and the Won Dynasties.

Evaluation of the Usefulness of MapPHAN for the Verification of Volumetric Modulated Arc Therapy Planning (용적세기조절회전치료 치료계획 확인에 사용되는 MapPHAN의 유용성 평가)

  • Woo, Heon;Park, Jang Pil;Min, Jae Soon;Lee, Jae Hee;Yoo, Suk Hyun
    • The Journal of Korean Society for Radiation Therapy
    • /
    • v.25 no.2
    • /
    • pp.115-121
    • /
    • 2013
  • Purpose: Latest linear accelerator and the introduction of new measurement equipment to the agency that the introduction of this equipment in the future, by analyzing the process of confirming the usefulness of the preparation process for applying it in the clinical causes some problems, should be helpful. Materials and Methods: All measurements TrueBEAM STX (Varian, USA) was used, and a file specific to each energy, irradiation conditions, the dose distribution was calculated using a computerized treatment planning equipment (Eclipse ver 10.0.39, Varian, USA). Measuring performance and cause errors in MapCHECK 2 were analyzed and measured against. In order to verify the performance of the MapCHECK 2, 6X, 6X-FFF, 10X, 10X-FFF, 15X field size $10{\times}10$ cm, gantry $0^{\circ}$, $180^{\circ}$ direction was measured by the energy. IGRT couch of the CT values affect the measurements in order to confirm, CT number values : -800 (Carbon) & -950 (COUCH in the air), -100 & 6X-950 in the state for FFF, 15X of the energy field sizes $10{\times}10$, gantry $180^{\circ}$, $135^{\circ}$, $275^{\circ}$ directionwas measured at, MapPHAN allocated to confirm the value of HU were compared, using the treatment planning computer for, Measurement error problem by the sharp edges MapPHAN Learn gantry direction MapPHAN of dependence was measured in three ways. GANTRY $90^{\circ}$, $270^{\circ}$ in the direction of the vertically erected settings 6X-FFF, 15X respectively, and Setting the state established as a horizontal field sizes $10{\times}10$, $90^{\circ}$, $45^{\circ}$, $315^{\circ}$, $270^{\circ}$ of in the direction of the energy-6X-FFF, 15X, respectively, were measured. Without intensity modulated beam of the third open arc were investigated. Results: Of basic performance MapCHECK confirm the attenuation measured by Couch, measured from the measured HU values that are assigned to the MAP-PHAN, check for calculation accuracy for the angled edge of the MapPHAN all come in a range of valid measurement errors do not affect the could see. three ways for the Gantry direction dependence, the first of the meter built into the value of the Gantry $270^{\circ}$ (relative $0^{\circ}$), $90^{\circ}$ (relative $180^{\circ}$), 6X-FFF, 15X from each -1.51, 0.83% and -0.63, -0.22% was not affected by the AP/PA direction represented. Setting the meter horizontally Gantry $90^{\circ}$, $270^{\circ}$ from the couch, Energy 6X-FFF 4.37, 2.84%, 15X, -9.63, -13.32% the difference. By-side direction measurements MapPHAN in value is not within the valid range can not, because that could be confirmed as gamma pass rate 3% of the value is greater than the value shown. You can check the Open Arc 6X-FFF, 15X energy, field size $10{\times}10$ cm $360^{\circ}$ rotation of the dose distribution in the state to look at nearly 90% pass rate to emerge. Conclusion: Based on the above results, the MapPHAN gantry direction dependence by side in the direction of the beam relative dose distribution suitable for measuring the gamma value, but accurate measurement of the absolute dose can not be considered is. this paper, a more accurate treatment plan in order to confirm, Reduce the tolerance for VMAT, such as lateral rotation investigation in order to measure accurate absolute isodose using a combination of IMF (Isocentric Mounting Fixture) MapCHEK 2, will be able to minimize the impact due to the angular dependence.

  • PDF