• 한국전기전자재료학회논문지
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• 제23권9호
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• pp.667-670
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• 2010

In this paper, a high voltage current sensing circuit for boost converter is designed and verified by Cadence SPECTRE simulations. The current mirror pair, power and sensing metal-oxide semiconductor field effect transistors (MOSFETs) with size ratio of K, is used in our on-chip current sensing circuit. Very low drain voltages of the current mirror pair should be matched to give accurate current sensing, so a folded-cascode opamp with a PMOS input pair is used in our design. A high voltage high side lateral-diffused MOS transistor (LDMOST) switch is used between the current sensing circuit and power MOSFET to protect the current sensing circuit from the high output voltage. Simulation results using 0.35 ${\mu}m$ BCD process show that current sensing is accurate and the pulse frequency modulation (PFM) boost converter using the proposed current sensing circuit satisfies with the specifications.

• 전기학회논문지P
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• 제58권4호
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• pp.377-384
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• 2009

In this paper, leakage current sensing module of SoC(System on Chip)type and real time monitoring system under consideration of electromagnetic interface in power trunk line are developed. The first, leakage current sensing module of SoC type under consideration of electromagnetic interface is developed, and the developed sensing module of SoC type is composed of leakage sensing part, power supply part, interface part, communication part, AD(Alternating current to Direct current)convert part and amplification part. And also the electromagnetic compatibility is evaluated by conduction and radiation of EMI(Electromagnetic Interference) for developed sensing module. The developed system can have confidence, stability and do energy saving under mixed electric circumstance of the low voltage communication device and high voltage equipment. The second, the real time remote monitoring system is developed using designed wire and wireless communication module with leakage current sensing module of SoC type. The developed real time remote monitoring system can monitor sensing state, occurrence state of leakage current and alarm for each step etc.. And the device configuration, PCB layout for leakage current sensing module of system on chip type and the experiment configuration in consideration of EMI are presented. Also the measurement results of conduction and radiation for EMI are presented.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.14-14
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• 2010

A high voltage current sensing circuit for LED driver IC is designed and verfied by Cadence SPECTRE simulations. The current mirror pair, power and sensing MOSFETs with size ratio of K, is used in our on-chip current sensing circuit. Very low drain voltages of the current mirror pair should be matched to give accurate current sensing, so a folded-cascode opamp with a PMOS input pair is used in our design. A high voltage high side LDMOST switch is used between the current sensing circuit and power MOSFET to protect the current sensing circuit from the high output voltage. Simulation results using 0.35um BCD process show that current sensing is accurate with properly frequency compensated opamp.

• Transactions on Electrical and Electronic Materials
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• 제14권5호
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• pp.235-241
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• 2013

A low power CMOS control circuit is applied in an integrated DC-DC buck converter. The integrated converter is composed of a feedback control circuit and power block with 0.35 ${\mu}m$ CMOS process. A current-sensing circuit is integrated with the sense-FET method in the control circuit. In the current-sensing circuit, a current-mirror is used for a voltage follower in order to reduce power consumption with a smaller chip-size. The N-channel MOS acts as a switching device in the current-sensing circuit where the sensing FET is in parallel with the power MOSFET. The amplifier and comparator are designed to obtain a high gain and a fast transient time. The converter offers well-controlled output and accurately sensed inductor current. Simulation work shows that the current-sensing circuit is operated with an accuracy of higher than 90% and the transient time of the error amplifier is controlled within $75{\mu}sec$. The sensing current is in the range of a few hundred ${\mu}A$ at a frequency of 0.6~2 MHz and an input voltage of 3~5 V. The output voltage is obtained as expected with the ripple ratio within 1%.

• Journal of Power Electronics
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• 제17권5호
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• pp.1372-1381
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• 2017

This paper presents a high-side switch driver IC capable of improving the current sensing accuracy and providing reverse battery protection. Power semiconductor switches used to replace relay switches are encumbered by two disadvantages: they are prone to current sensing errors and they require additional external protection circuits for reverse battery protection. The proposed IC integrates a gate driver and current sensing blocks, thus compensating for these two disadvantages with a single IC. A p-sub-based 90-V $0.13-{\mu}m$ bipolar-CMOS-DMOS (BCD) process is used for the design and fabrication of the proposed IC. The current sensing accuracy (error ${\leq}{\pm}5%$ in the range of 0.1 A-6.5 A) and the reverse battery protection features of the proposed IC were experimentally tested and verified.

• Journal of Power Electronics
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• 제9권6호
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• pp.903-910
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• 2009

In this paper, a digital average current mode control using diode current sensing technique is proposed. Although the conventional inductor current sensing technique is widely used, the sensed signal of the current is negative. As a result, it requires an additional circuit to be applied to general digital controller ICs. The proposed diode current sensing method not only minimizes the peripheral circuit around the digital IC but also consumes less power to sense current information than the inductor current sensing method. The feasibility of the proposed technique is verified by experiments using a 500W power factor correction (PFC) boost rectifier.

• 전력전자학회논문지
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• 제17권5호
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• pp.416-422
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• 2012

This paper proposes a low power-loss current measurement using a resistor and bypass switch. Conventional current sensing method using a resistor has a disadvantage of power loss which degrades the efficiency of the entire systems. On the other hand, proposed measurement technique operating with bypass-switch connected in parallel with sensing resistor can reduce power loss significantly the current sensor. The propose measurement works for discrete-time sampling of current sensing. Even while the analog-digital conversion does not occur at the controller, the sensing voltage across the sensor still causes ohmic conduction loss without information delivery. Hence, the bypass switch bypasses the sensing current with a small amount of power loss. In this paper, a 90[W] prototype hardware has been implemented for photovoltaic MPPT experimental verification of the proposed low power-loss current measurement technique. From the results, it can be seen that PV power observation is successfully done with the proposed method.

• 전력전자학회:학술대회논문집
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• 전력전자학회 2016년도 전력전자학술대회 논문집
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• pp.99-100
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• 2016

In a AC motor used by three phase inverter, the phase current must be measured to control instantaneous torque. It is expensive to use current sensor for measuring current in low cost motor. So, shunt resistor is used to measure current. But, the method sensing the phase current using shunt resistor cannot perform the vector control in high speed because of the area that impossible to restore three phase current. In this paper, predictive current is proposed for reconstructing the current in the impossible current sensing area that reduce the current ripple in TSSI(Three shunt sensing inverter) for PMSM.

• 전력전자학회:학술대회논문집
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• 전력전자학회 2013년도 전력전자학술대회 논문집
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• pp.36-37
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• 2013

This paper presents high voltage operation sensing boost converter with high side current. Proposed topology has three functions which are high voltage driving, high side current sensing and low voltage boost controller. High voltage gate driving block provides LED dimming function and switch function such as a load switch of LED driver. To protect abnormal fault and burn out of LED bar, it is applied high side current sensing method with high voltage driver. This proposed configuration of boost converter shows the effectiveness capability to LED driver through measurement results.

• Transactions on Electrical and Electronic Materials
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• 제17권5호
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• pp.302-305
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• 2016

In this paper, a low on-resistance and high current driving capability trench gate power metal-oxide-semiconductor field-effect transistor (MOSFET) incorporating a current sensing feature is proposed and evaluated. In order to realize higher cell density, higher current driving capability, cost-effective production, and higher reliability, self-aligned trench etching and hydrogen annealing techniques are developed. While maintaining low threshold voltage and simultaneously improving gate oxide integrity, the double-layer gate oxide technology was adapted. The trench gate power MOSFET was designed with a 0.6 μm trench width and 3.0 μm cell pitch. The evaluated on-resistance and breakdown voltage of the device were less than 24 mΩ and 105 V, respectively. The measured sensing ratio was approximately 70:1. Sensing ratio variations depending on the gate applied voltage of 4 V ~ 10 V were less than 5.6%.