• Proceedings of the Korean Vacuum Society Conference
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• 2008.02a
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• pp.77-77
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• 2008

• Proceedings of the Korean Vacuum Society Conference
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• 2004.08a
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• pp.241-242
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• 2004

• Proceedings of the Optical Society of Korea Conference
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• 2005.07a
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• pp.144-145
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• 2005

• Proceedings of the Korean Vacuum Society Conference
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• 2005.08a
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• pp.35-36
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• 2005

• Proceedings of the Materials Research Society of Korea Conference
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• 2004.05a
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• pp.25-25
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• 2004

• Proceedings of the Korean Society of Potoscience Conference
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• 2005.06a
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• pp.59-59
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• 2005

• Asian Journal of Innovation and Policy
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• v.4 no.2
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• pp.263-270
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• 2015

Asian Journal of Innovation and Policy (AJIP) would like to introduce an interview section on innovations, innovators, and entrepreneurs if possible in every issue. The interviews introduced will be selected not based on a journalistic view, but rather by its theoretical or practical implications. This issue will introduce an entrepreneur who was a key engineer, Chief Technology Officer (CTO), and CEO of Samsung Electronics, in addition to being the Minister of ICT in the Korean government. Currently, he is the CEO of an investment company. His success was tied to the success of semiconductors at Samsung Electronics, which became the world leader, leading some to even call him "the god of semiconductors". This interview resurrects the debates on the mode 2 society and the role of education in entrepreneurship.

• ETRI Journal
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• v.36 no.2
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• pp.301-308
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• 2014

Three-dimensional integration technology results in area savings, platform power savings, and an increase in performance. Through-silicon via (TSV) assembly and manufacturing processes can potentially introduce defects. This may result in increases in manufacturing and test costs and will cause a yield problem. To improve the yield, spare TSVs can be included to repair defective TSVs. This paper proposes a new built-in self-test feature to identify defective TSV channels. For defective TSVs, this paper also introduces dynamic self-repair architectures using code-based and hardware-mapping based repair.

• Proceedings of the Acoustical Society of Korea Conference
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• 1984.12a
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• pp.27-32
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• 1984

When chopped light inpinges on some condenced matters such as HgS, HgI2 and GaSe semiconductors, in an enclosed cell, the acoustic signals are produced within the cell. These acoustic signals were detected by using a gas-phase microphone in order to investigate the physical properties of the samples. In order to carry out investigation, PA-cell was first designed and made so as to produce higher sensitivity to acoustic signals. Second, an analysis of the photoacoustic spectrum of the various compounds was carried out to obtain the intensity of the PA-signal in terms of light wavelength and to calculate the energy band gaps occuring according to energy transitions. The agreement between the results obtained by this conventional PAS technique and the results obtained by the optical spectrum method was good. In additional analysis conducted on the basis of the R-G theory and the Sze theory are capable of determining the characteristics of energy transition of semiconductors.

• Proceedings of the KIEE Conference
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• 1992.07b
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• pp.813-815
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• 1992

Accurate Capacitance-Voltage characteristics of Metal-Insulator-Semiconductor (MIS) devices in narrow band-gap semiconductors are presented. The unique band structure of narrow band-gap semiconductors is taken into account such as non-parabolicity and degeneracy. Compensated and partially ionized impurities either in the bulk or the space charge region are also considered. HgCdTe is a defect semiconductor, so this approach is very important for characterization and analysis of MIS devices.