Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)
- 1992.07b
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- Pages.813-815
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- 1992
A Calculation of C-V characteristics for HgCdTe Semiconductor material
HgCdTe 반도체 재료의 C-V 특성 계산
Abstract
Accurate Capacitance-Voltage characteristics of Metal-Insulator-Semiconductor (MIS) devices in narrow band-gap semiconductors are presented. The unique band structure of narrow band-gap semiconductors is taken into account such as non-parabolicity and degeneracy. Compensated and partially ionized impurities either in the bulk or the space charge region are also considered. HgCdTe is a defect semiconductor, so this approach is very important for characterization and analysis of MIS devices.
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