A Study on the Physical Properties of Compound Semiconducts by Photoacoustic Spectroscopy

광음향효과에 의한 화합물 반도체의 물성연구

When chopped light inpinges on some condenced matters such as HgS, HgI2 and GaSe semiconductors, in an enclosed cell, the acoustic signals are produced within the cell. These acoustic signals were detected by using a gas-phase microphone in order to investigate the physical properties of the samples. In order to carry out investigation, PA-cell was first designed and made so as to produce higher sensitivity to acoustic signals. Second, an analysis of the photoacoustic spectrum of the various compounds was carried out to obtain the intensity of the PA-signal in terms of light wavelength and to calculate the energy band gaps occuring according to energy transitions. The agreement between the results obtained by this conventional PAS technique and the results obtained by the optical spectrum method was good. In additional analysis conducted on the basis of the R-G theory and the Sze theory are capable of determining the characteristics of energy transition of semiconductors.