• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.33 no.5
• /
• pp.350-354
• /
• 2020

In this study, a pressure sensor for each displacement was fabricated based on the silicon-based pressure sensor obtained through simulation results. Wires were bonded to the pressure sensor, and a piezoresistive pressure sensor was inserted into the printed circuit board (PCB) base by directly connecting a micro-electro-mechanical system (MEMS) sensor and a readout integrated circuit (ROIC) for signal processing. In addition, to prevent exposure, a non-conductive liquid silicone was injected into the sensor and the entire ROIC using a pipette. The packaging proceeded to block from the outside. Performing such packaging, comparing simple contact with strong contact, and confirming that the measured pulse wavelength appears accurately.

• Journal of the Semiconductor & Display Technology
• /
• v.17 no.4
• /
• pp.76-79
• /
• 2018

In this paper, we developed a pressure monitoring system using silicon pressure sensor. The pressure monitoring system was developed on the basis of a microcontroller, and a self-developed silicon pressure sensor was applied. The pressure monitoring system outputs the current pressure value via UART communication. In addition, it includes a function of displaying by LED when the preset three-step pressure (low, medium, high pressure) is reached. The silicon pressure sensor used in the pressure monitoring system was set to 0 kPa, 10 kPa, 26 kPa, and the pressure monitoring system was evaluated because the measured maximum pressure was in the range of 100 kPa.

• Journal of the Semiconductor & Display Technology
• /
• v.7 no.3
• /
• pp.29-34
• /
• 2008

This paper describes the fabrication and characterization of a differential pressure type integrated mass-flow controller made of stainless steel for reactive and corrosive gases. The fabricated mass-flow controller is composed of a normally closed valve and differential pressure sensor. A stacked solenoid actuator mounted on a base-block is utilized for precise and rapid control of gas flow. The differential pressure flow sensor consisting of four diaphragms can detect a flow rate by deflection of diaphragm. By a feedback control from the flow sensor to the valve actuator, it is possible to keep the flow rate constant. This device shows a fast response less than 0.3 sec. Also, this device shows accuracy less than 0.1% of full scale. It is confirmed that this device is not attacked by toxic gas, so the integrated mass-flow controller can be applied to advanced semiconductor processes which need fine mass-flow control corrosive gases with fast response.

• Journal of the Semiconductor & Display Technology
• /
• v.11 no.2
• /
• pp.17-21
• /
• 2012

This study developed a high-temperature, high-pressure dynamic pressure sensor using LGT(lanthanum gallium tantalate). The sensitivity of the fabricated dynamic pressure sensor was 2.1 mV/kPa and its nonlinearity was 2.5%FS. We confirmed that the high-temperature dynamic pressure sensor operated stably in high-temperature environment at $500^{\circ}C$. The developed dynamic pressure sensor using LGT is expected to be applicable not only to gas turbines but also in various industrial areas in duding airplanes and power stations.

• Journal of the Semiconductor & Display Technology
• /
• v.16 no.4
• /
• pp.63-67
• /
• 2017

In this study, We developed a simple and low cost capacitive pressure mapping sensor and microcontroller-base lock-in amplifier array. We developed capacitive type pressure mapping sensor by forming the electrode and adhesives on plastic films using only the printing process, and the finishing the process by bonding the two films. Lock-in amplifier array was based on a general purpose microcontroller and had only a charge amplifier as analog circuits. In this study, a $10{\times}10$ capacitive type pressure mapping sensor and lock-in amplifier array was fabricated and its characteristics were analyzed.

• Journal of the Semiconductor & Display Technology
• /
• v.18 no.4
• /
• pp.87-91
• /
• 2019

The diagnosis of the failure for the existing electrical facilities was based on regular preventive maintenance, but this preventive maintenance was limited in preventing a lot of cost loss and sudden system failure. To overcome these shortcomings, fault prediction and diagnostic techniques are critical to increasing system reliability by monitoring electrical installations in real time and detecting abnormal conditions in the facility early. As the performance and quality deterioration problem occurs frequently due to the increase in the number of users of the motor pump, the purpose is to build an intelligent control system that can control the motor pump to maximize the performance and to improve the quality and reliability. To this end, a vibration sensor, temperature sensor, pressure sensor, and low water level sensor are used to detect vibrations, temperatures, pressures, and low water levels that can occur in the motor pump, and to build a system that can identify and diagnose information to users in real time.

• Journal of Sensor Science and Technology
• /
• v.11 no.3
• /
• pp.138-144
• /
• 2002

The silicon piezoresistive pressure sensor is made by semiconductor process to obtain stainless steel isolated type pressure sensor. The sensor is loaded on a stainless steel housing with glass molding, $50\;{\mu}m$ stainless steel thin film is welded, and the stainless steel housing encapsulated by silicone oil. The performance of fabricated the pressure sensor has 10 bar pressure range. The XTR105 of exclusive transmitter chip is used the pressure transmitter that output current is 4 - 20 mA. The accuracy is ${\pm}5%$ FS, however, the accuracy is ${\pm}1%$ FS when the sensor is compensated temperature.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
• /
• 2006.10a
• /
• pp.10-13
• /
• 2006

This paper describes on the fabrication and characteristics of a 3C-SiC (Silicon Carbide) micro pressure sensor for harsh environment applications. The implemented micro pressure sensor used 3C-SiC thin-films heteroepitaxially grown on SOI (Si-on-insulator) structures. This sensor takes advantages of the good mechanical properties of Si as diaphragms fabricated by D-RIE technology and temperature properties of 3C-SiC piezoresistors. The fabricated pressure sensors were tasted at temperature up to $250^{\circ}C$ and indicated a sensitivity of 0.46 mV/V*bar at room temperature and 0.28 mV/V*bar at $250^{\circ}C$. The fabricated 3C-Sic/SOI pressure sensor presents a high-sensitivity and excel lent temperature stability.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.17 no.2
• /
• pp.186-191
• /
• 2017

An integrated pressure-sensor system was developed using the sensor-conditioning processes, which resulted in the optimum sensitivity of the pressure-sensor through the signal amplification, noise reduction, and level shift. Due to the specified characteristics among the components, such as operation range, the sensor output was generally limited compared to the full scale of the reading when coupled with other parts. Devices fabricated exhibited comparable characteristics with higher pressure sensitivity to that of the pressure sensor without sensor-conditioning process. In this work, the sensor resolution was at least enhanced at least by 25% using the sensor-conditioning processes.

• Journal of the Semiconductor & Display Technology
• /
• v.14 no.2
• /
• pp.1-7
• /
• 2015

In this paper, a new capacitive pressure sensor has been proposed for a displacement measurement. The new sensor is mainly composed of a gap of $5{\mu}m$ and a notch of $1{\mu}m$. And the sensor has the performance as the high sensitivity and capacitance compared with a commercial capacitive sensor. Therefore, the advantages of the new capacitive pressure sensor are good sensitivity in normal range, mechanically robust and large overload protection. The analytical model is induced for confirming the performance of the proposed sensor. In addition, FEM (finite elements method) simulation has been performed to verify the analytical model. Firstly, the displacement characteristics of diaphragm membrane were simulated by the analytical model and FEM in the case of different structure and materials. At last, through this analysis, these simulation results can be predicted the change of the performance when the device parameters are varied. And it is used as a design tool to achieve at a set of performance we desired.