• Journal of the Korean earth science society
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• v.34 no.6
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• pp.588-601
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• 2013

In geophysics and geophysical exploration fields, we can use information about inclination and azimuth in various ways. These include borehole deviation logging for inversion process, real-time data acquisition system, geophysical monitoring system, and so on. This type of information is also necessarily used in the directional drilling of shale gas fields. We thus need to develop a subminiature, low-powered, multi-functional inclination and azimuth measurement system for geophysical exploration fields. In this paper, to develop real-time measurement system, we adopt the high performance low power Micro Control Unit (made with state-of-the-art Complementary Metal Oxide Semiconductor technology) and newly released Micro Electro Mechanical Systems Attitude Heading Reference System sensors. We present test results on the development of a multifunctional real-time inclination and azimuth measurement system. The developed system has an ultra-slim body so as to be installed in 42mm sonde. Also, this system allows us to acquire data in real-time and to easily expand its application by synchronizing with a depth encoder or Differential Global Positioning System.

• Applied Chemistry for Engineering
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• v.3 no.1
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• pp.88-99
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• 1992

For the development of semiconducting photoelectrode to be more stable and efficient in the process of photoelectrolysis of the water, pure titanium rods were oxidized by anodic oxidation, furance oxidation and flame oxidation and used as electrodes. The Indium islands were formed by electrodeposition of "In" thin film on $TiO_2$ and Ti by electrodeposition. Also $A1_2O_3$ and NiO islands were coated on Ti by the electron-beam evaporation technique. The maximum photoelectrochemical conversion efficiency(${\eta}$) was 0.98% for flame oxidized electrode($1200^{\circ}C$ for 2min in air). Anodically oxidized electrodes have photoelectrochemical conversion efficiency of 0.14%. Furnace oxidized electrode($800^{\circ}C$ for 10min in air) has 0.57% of photoelectrochemical efficiency and shows a band-gap energy of about 2.9eV. The $In_2O_3$ coated $TiO_2$ exhibits 0.8% of photoelectrochemical efficiency but much higher value of ${\eta}$ was obtained with the Increase of applied blas voltage. However, $Al_2O_3$ or NiO coated $TiO_2$ shows much low value of ${\eta}$. The efficiency was dependent on the presence of the metallic interstitial compound $TiO_{0+x}$(x<0.33) at the metal-semiconductor interface and the thickness of the suboxide layer and the external rutile scale.

• The Journal of Engineering Geology
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• v.30 no.1
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• pp.17-30
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• 2020

An optical televiewer is a geophysical logging device that produces continuous high-resolution full-azimuth images of a borehole wall using a light-emitting-diode and a complementary metal-oxide semiconductor image sensor to provide valuable information on subsurface discontinuities. Recently, borehole imaging logging has been applied in many fields, including ground subsidence monitoring, rock mass integrity evaluation, stress-induced fracture detection, and glacial annual-layer measurements in polar regions. Widely used commercial borehole imaging logging systems typically have limitations depending on equipment specifications, meaning that it is necessary to clearly verify the scope of applications while maintaining appropriate quality control for various borehole conditions. However, it is difficult to directly check the accuracy, implementation, and reliability for outcomes, as images derived from an optical televiewer constitute in situ data. In this study, we designed and constructed a modular fractured borehole model having similar conditions to a borehole environment to report unprecedented results regarding reliable data acquisition and processing. We investigate sonde magnetometer accuracy, color realization, and fracture resolution, and suggest data processing methods to obtain accurate aperture measurements. The experiment involving the fractured borehole model should enhance not only measurement quality but also interpretations of high-resolution and reliable optical imaging logs.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.42 no.9 s.339
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• pp.9-18
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• 2005

To make high-performance, low-power transistors beyond the technology node of 60 nm complementary metal-oxide-semiconductor field-effect transistors(C-MOSFETs) possible, the effect of electron mobility of the thickness of strained Si grown on a relaxed SiGe/SiO2/Si was investigated from the viewpoint of mobility enhancement via two approaches. First the parameters for the inter-valley phonon scattering model were optimized. Second, theoretical calculation of the electronic states of the two-fold and four-fold valleys in the strained Si inversion layer were performed, including such characteristics as the energy band diagrams, electron populations, electron concentrations, phonon scattering rate, and phonon-limited electron mobility. The electron mobility in an silicon germanium on insulator(SGOI) n-MOSFET was observed to be about 1.5 to 1.7 times higher than that of a conventional silicon on insulator(SOI) n-MOSFET over the whole range of Si thickness in the SOI structure. This trend was good consistent with our experimental results. In Particular, it was observed that when the strained Si thickness was decreased below 10 nm, the phonon-limited electron mobility in an SGOI n-MOSFT with a Si channel thickness of less than 6 nm differed significantly from that of the conventional SOI n-MOSFET. It can be attributed this difference that some electrons in the strained SGOI n-MOSFET inversion layer tunnelled into the SiGe layer, whereas carrier confinement occurred in the conventional SOI n-MOSFET. In addition, we confirmed that in the Si thickness range of from 10 nm to 3 nm the Phonon-limited electron mobility in an SGOI n-MOSFET was governed by the inter-valley Phonon scattering rate. This result indicates that a fully depleted C-MOSFET with a channel length of less than 15 m should be fabricated on an strained Si SGOI structure in order to obtain a higher drain current.

• Journal of the Institute of Electronics and Information Engineers
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• v.53 no.5
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• pp.143-151
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• 2016

The aim of this study is to investigate the optimal algorithm to extract medical radiation induced pixel signal from complementary metal-oxide semiconductor (CMOS) sensors of smartphones camera. The pixel intensity and pixel number of smartphone camera were measured as the X-ray dose was increased. The front camera of the smartphone camera has low noise property and excellent dose response as compared to the back camera of the smartphone. The indirect method which uses scintillation crystal in front of the smartphone camera, couldn't improve the X-ray detection efficiency as compared to the direct method which does not use any scintillator in front of the smartphone camera. When we used the algorithm which employing threshold level on the pixel intensity and pixel number, the dose linearity was more higher for the pixel intensity rather for the pixel number. The use of pixel intensity of Y color component which represents the grey scale, would be efficient in terms of the radiation detection efficiency and reducing the complexity of the image processing. We expect that the radiation dose monitoring can be managed effectively and systematically by using the proposed radiation detection algorithm, thus eventually will contribute to the public healthcare.

• Proceedings of the Korean Vacuum Society Conference
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• 1998.02a
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• pp.77-77
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• 1998

Present silicon dioxide (SiOz) 떠m as intennetal dielectridIMD) layers will result in high parasitic c capacitance and crosstalk interference in 비gh density devices. Low dielectric materials such as f f1uorina뼈 silicon oxide(SiOF) and f1uoropolymer IMD layers have been tried to s이ve this problem. I In the SiOF ftlm, as fluorine concentration increases the dielectric constant of t뼈 film decreases but i it becomes unstable and wa않r absorptivity increases. The dielectric constant above 3.0 is obtain어 i in these ftlms. Fluoropolymers such as polyte$\sigma$따luoroethylene(PTFE) are known as low dielectric c constant (>2.0) materials. However, their $\alpha$)Or thermal stability and low adhesive fa$\pi$e have h hindered 야1리ru뚱 as IMD ma따"ials. 1 The concept of a plasma processing a찌Jaratus with 비gh density plasma at low pressure has r received much attention for deposition because films made in these plasma reactors have many a advantages such as go여 film quality and gap filling profile. High ion flux with low ion energy in m the high density plasma make the low contamination and go어 $\sigma$'Oss피lked ftlm. Especially the h helicon plasma reactor have attractive features for ftlm deposition 야~au똥 of i앙 high density plasma p production compared with other conventional type plasma soun:es. I In this pa야Jr, we present the results on the low dielectric constant fluorocarbonated-SiOF film d밑JOsited on p-Si(loo) 5 inch silicon substrates with 00% of 0dFTES gas mixture and 20% of Ar g gas in a helicon plasma reactor. High density 띠asma is generated in the conventional helicon p plasma soun:e with Nagoya type ill antenna, 5-15 MHz and 1 kW RF power, 700 Gauss of m magnetic field, and 1.5 mTorr of pressure. The electron density and temperature of the 0dFTES d discharge are measUI벼 by Langmuir probe. The relative density of radicals are measured by optic허 e emission spe따'Oscopy(OES). Chemical bonding structure 3I피 atomic concentration 따'C characterized u using fourier transform infrared(FTIR) s야3띠"Oscopy and X -ray photonelectron spl:’따'Oscopy (XPS). D Dielectric constant is measured using a metal insulator semiconductor (MIS;AVO.4 $\mu$ m thick f fIlmlp-SD s$\sigma$ucture. A chemical stoichiome$\sigma$y of 야Ie fluorocarbina$textsc{k}$영-SiOF film 따~si야영 at room temperature, which t the flow rate of Oz and FTES gas is Isccm and 6sccm, res야~tvely, is form려 야Ie SiouFo.36Co.14. A d dielec$\sigma$ic constant of this fIlm is 2.8, but the s$\alpha$'!Cimen at annealed 5OOt: is obtain려 3.24, and the s stepcoverage in the 0.4 $\mu$ m and 0.5 $\mu$ m pattern 킹'C above 92% and 91% without void, res야~tively. res야~tively.

• Journal of Sensor Science and Technology
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• v.11 no.2
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• pp.77-83
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• 2002

In order to get low cost and portability, semiconductor gas sensor need to have low operating temperature and high sensitivity. $Fe_2O_3$ based sensors which were doped with metal oxide catalysts($MoO_3$, $V_2O_5$, $TiO_2$, and CdO) were fabricated by screen printing method. To improve electrical stability of sensors, the $Fe_2O_3$ sensors were annealed in $N_2$ at $700^{\circ}C$ for 2 hours. The $V_2O_5$ doped $Fe_2O_3$ sensor showed about $80{\sim}90%$ sensitivity at alcohol 1,000 ppm and have good selectivity to hydrocarbon gas and tobacco odors. The fabricated sensor and PIC-chip were employed for portable alarm system.

• Journal of the Korea Society for Simulation
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• v.17 no.4
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• pp.199-208
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• 2008

Lately, since Complementary Metal Oxide Semiconductor(CMOS) image sensor system has low power, low cost and been miniaturized, hardware and applied software studies using these strengths are being carrying on actively. However, the products equipped with CMOS image sensor based polling method yet has several problems in degree of completeness of applied software and firmware, compared with hardware’s. CMOS image sensor system has an ineffective synchronous problem due to superfluous message exchange. Also when a sending of data is delayed continually, overhead of re-sending is large. So because of these, it has a problem in structural stability according to Polling Method. In this study, polling cycle was subdivided in high-speed synchronization method of firmware -based through MCU and synchronization method of Stepwise was proposed. Also, re-connection and data sending were advanced more efficiently by using interrupt way. In conclusion, the proposed method showed more than 20 times better performance in synchronization time and error connection. Also, a board was created by using C328R board of CMOS image sensor-based and ATmega128L which has low power, MCU and camera modules of proposed firmware were compared with provided software and analyzed in synchronization time and error connection.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.1
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• pp.7-13
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• 2008

This paper proposes a newly structured circuit that can compensate current deviation of a data driver circuit for OLED. A conventional data drivel circuit for OLED cannot compensate the current deviation at the data drivel circuit output terminal generated by MOS process change, but the proposed data drivel circuit can authorize uniform value of current to an OLED panel by calibrating the current deviation at the output terminal. The proposed circuit can minimize current deviation of the output current via process change by connecting the circuit for data output current with a common interconnect line through addition of a switching transistor to the existing data output circuit. The circuit proposed in this paper has been designed based on an OLED panel supporting $128{\times}128$ resolution, and the process used for driver circuit development is 0.35um. As a result of the experiment in this study, the output current of the data driver circuit proposed here has 1% range of error, while 9% range of severe changes was demonstrated in the case of the previous data driver circuit. When using the data driver circuit for OLED proposed in this paper, high definition OLED display can be actualized and the circuit can be applied to mobile display devices requiring high quality display features.

• Imaging Science in Dentistry
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• v.48 no.2
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• pp.97-101
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• 2018

Purpose: This study evaluated the radiopacity of contemporary luting cements using conventional and digital radiography. Materials and Methods: Disc specimens (N=24, n=6 per group, ø$7mm{\times}1mm$) were prepared using 4 resin-based luting cements (Duolink, Multilink N, Panavia F 2.0, and U-cem). The specimens were radiographed using films, a complementary metal oxide semiconductor (CMOS) sensor, and a photostimulable phosphor plate (PSP) with a 10-step aluminum step wedge (1 mm incremental steps) and a 1-mm-thick tooth cut. The settings were 70 kVp, 4 mA, and 30 cm, with an exposure time of 0.2 s for the films and 0.1 s for the CMOS sensor and PSP. The films were scanned using a scanner. The radiopacity of the luting cements and tooth was measured using a densitometer for the film and NIH ImageJ software for the images obtained from the CMOS sensor, PSP, and scanned films. The data were analyzed using the Kruskal-Wallis and Mann-Whitney U tests. Results: Multilink (3.44-4.33) showed the highest radiopacity, followed by U-cem (1.81-2.88), Panavia F 2.0 (1.51-2.69), and Duolink (1.48-2.59). The $R^2$ values of the optical density of the aluminum step wedge were 0.9923 for the films, 0.9989 for the PSP, 0.9986 for the scanned films, and 0.9266 for the CMOS sensor in the linear regression models. Conclusion: The radiopacities of the luting materials were greater than those of aluminum or dentin at the same thickness. PSP is recommended as a detector for radiopacity measurements because of its accuracy and convenience.