• Proceedings of the KIEE Conference
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• 1996.07c
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• pp.1980-1981
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• 1996

Laser direct dry etching is a new technique in semiconductor processing which has a lot of advantage, including decrease of etching-induced damage, maskless, photoresistiess, and high selectivity. This study presents characteristics of a laser direct dry etching for $Al_{0.3}Ga_{0.7}As/GaAs$ multi-layer structures for the first time. In this study, we were able to obtain the unusual aching profiles. The cross sectional analysis of etched groove was peformed for reaction characteristics and their applications.

• The Proceeding of the Korean Institute of Electromagnetic Engineering and Science
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• v.12 no.1
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• pp.34-41
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• 2001

Semiconductors performing digital clocking are a main source of radiated emission noise. Therefore, the most secure method of reducing emission noise is to reduce emission radiated from semiconductors; an application of an absorber to the surface of semiconductors is one of these methods, too. However, in reality, it is difficult to achieve as much effect of noise reduction as expected by using only absorber. It is confirmed by experiment in this paper that a loop area within chip has no correlation with radiated emission noise and it is clarified why the existing absorber fails to achieve a satisfactory effect of emission noise reduction. Besides, a new type of chip coating absorber has been developed which can cover up to semiconductor out lead by using ferrite coating material of ferrite/epoxy acrylate substance using only permeability loss out of electromagnetic wave reduction characteristics of materials. As a result of evaluating radiated emission noise by applying this coating absorber to semiconductor device, it could be confirmed that emission noise decreased from about 3 ㏈ up to 20㏈ depending on frequency.

• Vacuum Magazine
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• v.1 no.3
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• pp.21-27
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• 2014

Advanced process and integration for future semiconductor devices is approaching the physical limit. The new materials with low dimensional structure have recently attracted great attention due to its expandability for the future electronic devices. In order to apply the materials to future semiconductor devices, the control of carrier scattering is critical issue. That is, the carrier scattering with physical quantity in low dimensional structure significantly modulates the device characteristics. We introduce the role of defect in several future semiconductor materials and devices. The analysis of defect in the structure becomes the most important techniques. In particular, surface defect in nano structures totally controls the device characteristics. The changes imply that the metrology field is leading the future industry for semiconductor.

• Proceedings of the Korean Magnestics Society Conference
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• 2016.05a
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• pp.98-98
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• 2016

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.35 no.6
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• pp.547-555
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• 2022

Color conversion layer refers to a layer that converts the blue light emitted from the backlight into the red and green light. Heavy metal-free quantum dots and perovskite nanocrystals have attracted great attention as base materials for color conversion layers due to their outstanding optical characteristics. Here, we review recent advances in the development of color conversion layers based on quantum dots. First, we overview the representative optical characteristics of quantum dots and perovskite nanocrystals, and then introduce printing techniques for color converting layers including photolithography, inkjet printing, and nanoimprinting. Finally, we conclude this review with a brief perspective.

• Korean Journal of Hazardous Materials
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• v.3 no.1
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• pp.59-64
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• 2015

Semiconductor industry has large number of chemical inventory and is easily exposed to chemical release incidents. Toxic release is one of the most interested area in evaluating consequence to the vicinity of industry facilities handling hazardous materials. Hydrofluoric acid is one of the typical chemical used in semiconductor facility and is selected and toxic release is evaluated to assess the risk impacted to its off-site. Accident scenarios were listed using process safety information. The scenarios having effect to the off-site were selected and assessed further according to guideline provided by Korea government. Worst case and alternative scenarios including other interested scenarios were evaluated using ALOHA. Each evaluated scenario was assessed further considering countermeasures. The results showed that the facility handling hydroflooric acid is safe enough and needed no further protections at the moment.

• Proceedings of the Korean Magnestics Society Conference
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• 2007.05a
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• pp.136.2-136.2
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• 2007

• Korean Journal of Materials Research
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• v.3 no.6
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• pp.645-651
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• 1993

The growth of semi-insulating(SI) high resistant undoped GaAs epilayer has been studied to solve the problems ocurring when GaAs IC is fabricated by the widely used ion implantation directly into the SI GaAs substrate. The EPD ditribution of the SI substrates has been examined, and the suitability of the buffer layers grown by MOCVD and MBE, respectively, has been tested for IC fabrication through leakage current measurement. IJngated FET has been fabricated on the SI epilayer and leakage current through the buffer layer has been measured. In the case of MOCVD grown 1$\mu\textrm{m}$-thick buffer layer, the leakage current is as small as about 270nA/mm, and this value does not affect the pinch-off of FET. In this case, the epilayer quality is affected by the substrate defects because the leakage current distribution is coincided with the EPD distribution of the SI substrate. The 2$\mu\textrm{m}$-thick buffer layer grown by MBE, however, has the better quality, and shows the lower leakage current(40nA/mrn) and higher uniformity.

• Proceedings of the Korean Vacuum Society Conference
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• 2004.08a
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• pp.129-129
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• 2004

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2002.11a
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• pp.120-122
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• 2002