• Korean Journal of Optics and Photonics
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• v.13 no.5
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• pp.396-399
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• 2002

Using a bi-layer anti-reflection coating of $TiO_2$and $SiO_2,$ we have achieved a minimum facet reflectivity of $~10^{-5}$ and a band width of 27 nm for a reflectivity of $~10^{-4}$ or less for 1.3 $\mu\textrm{m}$ spot size converter integrated semiconductor lasers. This coating is applicable to external-cavity-tuned laser sources and semiconductor optical amplifiers.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.280-280
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• 2010

Semiconductor quantum dots are of great interest for both fundamental research and industrial applications due to their unique size dependant properties. The most promising application of colloidal semiconductor nanocrystals (quantum dots or QDs) is probably as emitters in biomedical labeling, LEDs, lasers etc. As compared to II-VI quantum dots, III-V have attracted greater interest owing to their less ionic lattice, larger exciton diameters and reduced toxicity. Among the III-V semiconductor quantum dots, Indium Phosphide (InP) is a popular material due to its bulk band gap of 1.35 (eV) which is responsible for the photoluminescence emission wavelength ranging from blue to near infrared with change in size of QDs. Nevertheless, in recent years, the exact type of collective properties that arise when semiconductor quantum dots (QDs) are assembled into two- or three-dimensional arrays has drawn much interest. The term "uantum dot solids" is used to indicate three-dimensional assemblies of semiconductor QDs. The optoelectronic properties of the quantum dot solids are known to depend on the electronic structure of the individual quantum dot building blocks and on their electronic interactions. This paper reports an efficient and rapid method to produce highly luminescent and monodisperse quantum dots solution and solid through fabrication of InP thin films. By varying the molar concentration of Indium to Ligand, QDs of different size were prepared. The absorption and emission behaviors were also studied. Similar measurements were also performed on InP quantum dot solid by fabricating InP thin films. The optical properties of the thin films are measured at different curing temperatures which show a blue shift with increase in temperature. The dielectric properties of the thin films were also investigated by Capacitance-voltage(C-V) measurements in a metal-insulator-semiconductor (MIS) device.

• Proceedings of the Optical Society of Korea Conference
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• 2000.02a
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• pp.276.2-278
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• 2000

In a recent years, a number of approaches have been studied, including passive, active, and hybrid mode-locking of semi-conductor lasers for short pulse generation and research has been devoted to achieve low timing-jitter operation since the timing jitter is unfavorable for system applications. Among the methods of mode locking, passive mode locking does not need external rf drives, and therefore the operation and fabrication procedures are simplified. In spite of these attractive advantages of passive mode-locked laser, it has critical drawbacks such as large timing jitter and the difficulty in synchronization with external circuits. Their inherent large timing jitter value was shown to be suppressed to certain levels by means of hybrid mode-locking technique$^{(1)}$ , where the saturable absorber section was modulated by an external signal with the cavity round trip frequency. Furthermore, the subharmonic mode-locking (SHML) technique alleviates the restrictions of high speed driving electronics. It has been demonstrated experimentally$^{(1)}$ that the hybrid subharmonic mode-locking technique has lead to significant reduction of the timing jitter. (omitted)

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.40 no.8
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• pp.572-579
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• 2003

By comparing the measured optical reflection spectra with calculated one by the transfer-matrix method (TMM) in epitaxial wafers for vertical-cavity surface-emitting lasers (VCSELs), we have estimated the systematic thickness errors in a simple and nondestructive way. The experimentally confirmed technique is based on the finding that the shape of the reflection spectra depends mainly on a newly defined single parameter, the effective error in the n-mirror layers, and the thickness error in the active cavity simply shifts the Fabry-Perot resonance wavelength. Also shown is that the proposed method is reliable when the relative standard deviation of the random thickness errors is less than 0.005. Because reflection spectra are routinely measured, we can easily estimate the thickness errors nondestructively with high spatial resolution.

• Korean Journal of Optics and Photonics
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• v.13 no.1
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• pp.15-20
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• 2002

We demonstrate a widely-tunable wavelength converter based on four-wave mixing in a semiconductor-fiber ring laser with no external pump light. Applying 10 GHz short pulses at -8 dBm as a probe signal, we achieve continuous wavelength tuning over the semiconductor optical amplifier gain-bandwidth reaching 30 nm down- and 17 m up-wavelength conversion. In addition to the wide tuning capability, the converter shows high-speed conversion and low saturation power capabilities.

• Korean Journal of Optics and Photonics
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• v.7 no.4
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• pp.370-374
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• 1996

A Superstructure Grating(SSG) Distributed-Bragg-Reflector(DBR) laser has a broad tuning range with a good mode suppression ratio. However, gaps of channel are observed in the wavelength-tuning characteristics of an SSGDBR laser which employs linearly-chirped DBR mirrors. We found by numerical simulation that the gaps may be attributed to the nonuniform reflection-peak heights of a linearly-chirped DBR mirrors. We propose a nonlinearly chirped grating DBR mirror structure that makes reflection-peak heights almost uniform. Therefore a nonlinearly chirped grating structure can be employed in an extended tuning range semiconductor laser to achieve gap-free tuning and low threshold current operation simultaneously.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.97-98
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• 2005

To investigate the ZnO thin films which is interested in the next generation of short wavelength LEDs and Lasers, our ZnO thin films were deposited by RF sputtering system. Phosphorus (P) and arsenic (As) were diffused into about 2.1${\mu}m$ ZnO thin films sputtered by RF magnetron sputtering system mn ampoule tube which was below $5\times10^{-7}$ Torr. The dopant sources of phosphorus and arsenic were $Zn_3P_2$ and $ZnAs_2$. Those diffusion was perform at 500, 600, and 700$^{\circ}C$ during 3hr. We find the condition of p-type ZnO whose diffusion condition is 700$^{\circ}C$, 3hr Our p-type ZnO thin film has not only very high carrier concentration of above $10^{19}/cm^3$ but also low resistivity of $5\times10^{-3}{\Omega}cm$.

• Journal of the Semiconductor & Display Technology
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• v.7 no.4
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• pp.19-22
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• 2008

Thin film has been an increasing important subject of intensive research, owing to the fact that these films possess desirable optical, electrical and electrochemical properties for uses in many semi-conducting nano-crystal applications, such as light-emitting diodes, lasers and solar cell applications. Here, ZnSe thin films were deposited by electrochemical method for the applications of light emitting diode. Electrochemical deposition of ZnSe thin film is not easy, because of the high difference of reduction potential between zinc ion and selenium acid. In order to handle the band gap of ZnSe crystal thin films easily, electrochemical methods are promising to manufacture these films economically. Therefore we have investigated the present study to characterize zinc selenide thin films deposited on ITO glass plates electrochemically. The luminescent properties of ZnSe films have been evaluated by UV-Vis spectrometer and luminescence spectrometer. And the morphology of the film surface has been discussed qualitatively from SEM images.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.11
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• pp.29-34
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• 1995

Mirror coating is applied to laser facets to improve properties of edge emitting laser diodes. In this experiment, InGaAsP/GaAs high power laser diodes were studied with respect to different degrees of anti-reflective coating. Sputterred $Al_{2}$O$_{3}$ was used as the coating material and the HR coating was kept constant at 90%. Threshold current density, differential quantum efficiency, emission wavelength and the operating current at 500mW were measured for a range of AR coating and compared with theoretically calculated values; that showed good agreements. Precise wavelength control is important for laser diodes for solid state pumping because of small absorption bandwidth. In addition, since these lasers operate under CW condition, a lowest possible operating current for a given power is desired in order to minimize the heat produced. From the results of this experiment, we were able to obtain a optimum range of AR coatings for minimum operating current. The wavelength can be varied up to 4nm within this range.

• Journal of the Korean Professional Engineers Association
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• v.30 no.4
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• pp.18-29
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• 1997

The telecommunications industry pro-grossed as old media, but new media is going into a new era of multi-media in the 21st century. In the latter half of 1970s we saw a boom of new media as a post-telephone era began. As the machines grew to the world level(standard), facsimiles, minitels of France and word processors of Japan were developed. Today some 15 years since the advent of new media era, the progress of technology is astonishing. Advancement of technology is seen in V and U letters attached to semiconductor chips, astonishing capability advancement of light emitting lasers and photo-diodes, etc and additionally technology advancement in large capacitized light disks. Thus these technologies have made possible transmitting a broad band network and a mobile communication and digitalized broadcasting. Increased capacity of every terminal, e.g, "letters $.$ voice $.$ still and mov-ing pictures" are essential for new media simultaneous and two -way transmission.