Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Optical properties of Phosphorus- and Arsenic-doped p-type ZnO Thin Films with Ampoule-tube Method

Ampoule-tube 법을 이용한 P와 As 도핑 p형 ZnO 박막의 광학적 특성

  • So, Soon-Jin (Knowledge*On Semiconductor Inc.) ;
  • Lee, Eun-Cheal (Knowledge*On Semiconductor Inc.) ;
  • Yoo, In-Sung (Wonkwang Univ. School of Electrical Electronic and Information Engineering) ;
  • Park, Choon-Bae (Wonkwang Univ. School of Electrical Electronic and Information Engineering)
  • 소순진 ((주) 나리지*온 반도체) ;
  • 이은철 ((주) 나리지*온 반도체) ;
  • 유인성 (원광대학교 전기전자 및 정보공학부) ;
  • 박춘배 (원광대학교 전기전자 및 정보공학부)
  • Published : 2005.11.10
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Abstract

To investigate the ZnO thin films which is interested in the next generation of short wavelength LEDs and Lasers, our ZnO thin films were deposited by RF sputtering system. Phosphorus (P) and arsenic (As) were diffused into about 2.1${\mu}m$ ZnO thin films sputtered by RF magnetron sputtering system mn ampoule tube which was below $5\times10^{-7}$ Torr. The dopant sources of phosphorus and arsenic were $Zn_3P_2$ and $ZnAs_2$. Those diffusion was perform at 500, 600, and 700$^{\circ}C$ during 3hr. We find the condition of p-type ZnO whose diffusion condition is 700$^{\circ}C$, 3hr Our p-type ZnO thin film has not only very high carrier concentration of above $10^{19}/cm^3$ but also low resistivity of $5\times10^{-3}{\Omega}cm$.

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