• Title/Summary/Keyword: Semiconductor equipment

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Analysis of Surge Current Path of Flyback Converter by Lightning Surge (뇌서지에 의한 플라이백 컨버터의 서지전류 경로 분석)

  • Park, Jun-Woo;Lee, Kang-Hee;Kim, Jin-Ho;Hong, Sung-Soo;Won, Jae-Sun;Kim, Jong-Hae
    • The Transactions of the Korean Institute of Power Electronics
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    • v.18 no.2
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    • pp.178-183
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    • 2013
  • The study of lightning surge have been conducted on information and communications equipment and power system. However, the research on SMPS itself is an inactive field. This paper analyzes surge current path of flyback converter with the combination wave generator by lightning surge. Also, this paper discloses that there exists the surge current with high-frequency component besides the low-frequency component based on the standard surge current. This high-frequency surge current is the major reason to damage the semiconductor devices such as FET and IC. To confirm the validity of the proposed issue, the analysis and experimental results are presented.

FIB Machining Characteristic Analysis according to $Ga^+$ Ion Beam Current (집속이온빔의 전류변화에 따른 미세가공 특성분석)

  • Kang, Eun-Goo;Choi, Byeong-Yeol;Hong, Won-Pyo;Lee, Seok-Woo;Choi, Hon-Zong
    • Transactions of the Korean Society of Machine Tool Engineers
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    • v.15 no.6
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    • pp.58-63
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    • 2006
  • FIB equipment can perform sputtering and chemical vapor deposition simultaneously. It is very advantageously used to fabricate a micro structure part having 3D shape because the minimum beam size of ${\Phi}10nm$ and smaller is available. Since general FIB uses very short wavelength and extremely high energy, it can directly make a micro structure less than $1{\mu}m$. As a result, FIB has been probability in manufacturing high performance micro devices and high precision micro structures. Until now, FIB has been commonly used as a very powerful tool in the semiconductor industry. It is mainly used for mask repair, device correction, failure analysis, IC error correction, etc. In this paper FIB-Sputtering and FIB-CVD characteristic analysis were carried out according to $Ga^+$ ion beam current that is very important parameter for minimizing the pattern size and maximizing the yield. Also, for FIB-Sputtering burr caused by redeposition of the substrate characteristic analysis was carried out.

Optimization of CMP Process parameter using DOE(Design of Experiment) Technique (DOE(Design of Experiment)기법을 통한 CMP 공정 변수의 최적화)

  • Lee, Kyoung-Jin;Park, Sung-Woo;Park, Chang-Jun;Kim, Ki-Wook;Jeong, So-Young;Kim, Chul-Bok;Choi, Woon-Shik;Kim, Sang-Yong;Seo, Yong-Jin
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.05c
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    • pp.228-232
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    • 2002
  • The rise throughput and the stability in the device fabrication can be obtained by applying chemical mechanical polishing(CMP) process in 0.18 ${\mu}m$ semiconductor device. However it does have various problems due to the CMP equipment. Especially, among the CMP components, process variables are very important parameters in determining removal rate and non-uniformity. In this paper, We studied the DOE(design of experiment) method for the optimized CMP process. Various process variations, such as table and head speed, slurry flow rate and down force, have investigated in the viewpoint of removal rate and non-uniformity. Through the above DOE results, we could set-up the optimal process parameters.

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Reliable design and electrical characteristics of vertical MEMS probe tip (수직형 MEMS 프로브 팁의 신뢰성 설계 및 전기적 특성평가)

  • Lee, Seung-Hun;Chu, Sung-Il;Kim, Jin-Hyuk;Han, Dong-Chul;Moon, Sung
    • Journal of Applied Reliability
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    • v.7 no.1
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    • pp.23-29
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    • 2007
  • Probe card is a test component which is to classify the known good die with electrical contact before the packaging in the ATE (automatic testing equipment). Conventional probe tip was mostly needle type, it has been difficult to meet with conventional type, because of decreasing chip size, pad to pad pitch and pads size increasingly. For that reason, probe cards using MEMS (micro electro mechanical system) technology have been developed for various semiconductor chips. In this paper, Area Array type MEMS Probe tip was designed,, fabricated, and characterized its mechanical and electrical properties. The authors found that good electrical characteristics under $1{\Omega}$ were acquired with gold (Au) and aluminium (Al) pad contact test over 0.5gf and 4gf respectively. And, contact resistance variation under $0.1{\Omega}$ were achieved with 100,000 times of repetition test. And, insertion loss (IS) for high frequency operation was ascertained over 300MHz at -3dB loss.

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Fire Hazard Analysis and Performance Based Fire safety Design for the Clean Room in Semiconductor Factory (반도체공장 Clean Room에 대한 화재요인 분석 및 성능위주 화재안전설계)

  • Han, Su-Jin;Kang, Kyung-Sik
    • Proceedings of the Safety Management and Science Conference
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    • 2006.11a
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    • pp.325-336
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    • 2006
  • This research analyzes clean room major fire prevention standard of clean Room (FM, IRI, and NFPA Code), the structure of Performance-Based Fire Safety Design (PBD) applied the korean fire industry situation. Performance-Based Fire Safety can operate effectively the performance of fire protection equipment & building design, so the fitness of fire safety system can be embodied by operating this. moreover, cost to be consume fire safety of real building can reduce and Performance-Based Fire Safety is considered to important technique in fire protection field. A fire in a clean room may cause a serious loss by spreading smoke particles. We will be investigated by using a computational fluid dynamics, for loss prevention by smoke spreading from one fire area to another for clean room and compared the Performance-Based Fire Safety Design with the prescriptive code design. The methodology of fire safety performance-based fire safety design and guarantee of many kinds design skill of fire system and developing design procedure will be very serious one in order to improve efficiency of domestic system. Therefore, This research will be contributing to secure safety of clean room and to set up the performance-based fire safety design in Korea by regulation for the performance-based fire safety design effectively.

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Development of Elimination Method of Measurement noise to Improve accuracy for White Light Interferometry (백색광 간섭계의 정밀도 향상을 위한 노이즈 제거 방법)

  • Ko, Kuk-Won;Cho, Soo-Yong;Kim, Min-Young
    • Journal of Institute of Control, Robotics and Systems
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    • v.14 no.6
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    • pp.519-522
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    • 2008
  • As industry of a semiconductor and LCD industry have been rapidly growing, precision technologies of machining such as etching and 3D measurement are required. Stylus has been important measuring method in traditional manufacturing process. However, its disadvantages are low measuring speed and damage possibility at contacting point. To overcome mentioned disadvantage, non-contacting measurement method is needed such as PMP(Phase Measuring Profilometry), WSI(white scanning interferometer) and Confocal Profilometry. Among above 3 well-known methods, WSI started to be applied to FPD(flat panel display) manufacturing process. Even though it overcomes 21t ambiguity of PMP method and can measure objects which has specular surface, the measuring speed and vibration coming from manufacturing machine are one of main issue to apply full automatic total inspection. In this study, We develop high speed WSI system and algorithm to reduce unknown noise. The developing WSI and algorithm are implemented to measure 3D surface of wafer. Experimental results revealed that the proposed system and algorithm are able to measure 3D surface profile of wafer with a good precision and high speed.

Fire Hazard Analysis and Performance Based Fire safety Design for the Clean Room in Semiconductor factory(1) (반도체공장 Clean Room에 대한 화재요인 분석 및 성능위주 화재안전설계(1))

  • Han, Su-Jin;Kang, Kyung-Sik
    • Journal of the Korea Safety Management & Science
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    • v.8 no.5
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    • pp.211-229
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    • 2006
  • This research analyzes clean room major fire prevention standard of clean Room(FM, IRI, and NFPA Code), the structure of Performance-Based Fire Safety Design(PBD) applied the korean fire industry situation. Performance-Based Fire Safety can operate effectively the performance of fire protection equipment & building design, so the fitness of fire safety system can be embodied by operating this. moreover, cost to be consume fire safety of real building can reduce and Performance-Based Fire Safety is considered to important technique in fire protection field. A fire in a clean room may cause a serious loss by spreading smoke particles. We will be investigated by using a computational fluid dynamics, for loss prevention by smoke spreading from one fire area to another for clean room and compared the Performance-Based Fire Safety Design with the prescriptive code design. The methodology of fire safety performance-based fire safety design and guarantee of many kinds design skill of fire system and developing design procedure will be very serious one in order to improve efficiency of domestic system. Therefore, This research will be contributing to secure safety of clean room and to set up the performance-based fire safety design in Korea by regulation for the performance-based fire safety design effectively.

Development of a High-Efficient Magneric Ballast for Fluorescentlamps (고효율의 형광램프용 자기식 안정기의 개발)

  • 남택주;김희식
    • Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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    • v.12 no.2
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    • pp.121-128
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    • 1998
  • A new magnetic ballast was designed and developed to get high luminous efficiency. The core material of new magnetic ballast was G-9 and its shape of core is modified. The diameter of the coil was upgraded to 0.5[mm], and a new power-saving circuit was designed for the semiconductor ignition starter. The experimental results of the ballast showed reduction of the electric loss in the magnetic ballast about 1.7Watt (0.5[%]). The luminous efficiency was increased by 6.2 lm/Watt (7.6[%]) and the ballast efficiency factor(BEF) of 1.09(7.6[%]). The prototype was tested through national standard testing procedure. A high efficient energy-using equipment (the second grade in the efficiency of energy consumption) was certified. The saving power of 1.7[W] was shown by lighting appratus for fluorescent lamps. The result will be used for the high efficient magnetic ballast technology.nology.

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Development of the SECS Protocol between Equipments and a Host in a Semiconductor Process (반도체 제조 공정에서 장비와 호스트간 SECS 프로토콜 개발)

  • Kim, Dae-Won;Jeon, Jong-Man;Lee, Byong-Hoon;Kim, Hong-Seok;Lee, Ho-Gil
    • Proceedings of the KIEE Conference
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    • 2000.07d
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    • pp.2904-2906
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    • 2000
  • 본 논문에서는 반도체 제조 공정에서 장비와 호스트간에 통신을 할 수 있는 SECS(SEMI Equipment Communications Standard) 프로토를의 개발을 제안한다. SECS 프로토콜은 메시지 전송을 위한 헤더 부분을 정의하는 SECS-I 프로토콜과 메시지 내용을 정의하는 SECS-II 프로토콜로 나뉘어지는데, RS232 시리얼 통신을 하는 SECS-I 프로토콜 대신에 이더넷(ethernet)을 통해 TCP/IP 통신을 할 수 있는 HSMS 프로토콜을 구현하고자 한다. HSMS(High-speed SECS Message Services)프로토콜은 SECS-I과 마찬가지로 SECS-II 메시지 내용을 전송 할 수 있도록 10바이트 크기의 헤더로 정의된다. HSMS 프로토콜 통신은 TCP/IP를 기반으로 하기 때문에 SECS 메시지 전송을 위한 통신 선로를 설정하기 위해 소켓 API를 응용하고 항상 통신 대기상태를 유지하기 위해 데몬(daemon) 형태로 구성한다. 실제 메시지 내용을 정의하고 있는 SECS-II 프로토콜은 데이터 인덱스 테이블과 표준에 정의된 형식에 맞게 파일형태나 DLL(Dynamic Link Library)형태로 구성하고 프로세스 프로그램(process program)을 수행하기 위해 SECS 프로토콜 표준에서 정의하는 SML(SECS Message Language)형식으로 변환 할 수 있는 스크립트 변환기(script translator)를 구현한다. 또한 HSMS 프로토콜이 전송할 SECS-II 메시지를 저장하기 위한 파라미터를 정의하고 실제 통신을 위한 테스트 베드를 위한 응용 프로그램을 제작한다

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Dry Cleaning of Si Contact Hole using$UV/O_3$ Method ($UV/O_3$을 이용한 Si contact hole 건식세정에 관한 연구)

  • 최진식;고용득;구경완;김성일;천희곤
    • Electrical & Electronic Materials
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    • v.10 no.1
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    • pp.8-14
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    • 1997
  • The UV/O$_{3}$ dry cleaning has been well known in removing organic molecules. The UV/O$_{3}$ dry cleaning method was performed to clean the Si wafer surfaces and contact holes contaminated by organic molecules such as residual PR. During the cleaning process, the Si surfaces were analyzed with X-ray photoelectron spectroscopy (XPS), atomic force microscope (AFM) and ellipsometer. When the UV/O$_{3}$ dry cleaning at 200'C was performed for 3 minutes, the residual photoresist was almost removed on Si wafer surfaces, but Si surfaces were oxidized. For UV/O$_{3}$ application of contact hole cleaning, the contact string were formed using the equipment of ISRC (Inter-university Semiconductor Research Center). Before Al deposition, UV/O$_{3}$ (at 200.deg. C) dry cleaning was performed for 3 minutes. After metal annealing, the specific contact resistivity was measured. Because UV/O$_{3}$ dry cleaning removed organic contaminants in contact holes, the specific contact resistivity decreased. Each contact hole size was different, but the specific contact resistivities were all much the same. Thus, it is expected that the UV/O$_{3}$ dry cleaning method will be useful method of removal of the organic contaminants at smaller contact hole cleaning.

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