• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.113-113
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• 2008

Cu CMP (Chemical Mechanical Planarization) has been used to remove copper film and obtain a planar surface which is essential for the semiconductor devices. Generally, it is known that chemical reaction is a dominant factor in Cu CMP comparing to Silicon dioxide CMP. Therefore, Cu CMP slurry has been regarded as an important factor in the entire process. This investigation focused on understanding the effect of corrosion inhibitor on copper surface and CMP results. Benzotriazole (BTA) was used as a corrosion inhibitor in this experiment. For the surface analysis, electrochemical characteristics of Cu was measured by a potentiostat and surface modification was investigated by X-ray photoelectron spectroscopy (XPS). As a result, corrosion potential (Ecorr) increased and nitrogen concentration ratio on the copper surface also increased with BTA concentration. These results indicate that BTA prevents Cu surface from corrosion and forms Cu-BTA layer on Cu surface. CMP results are also well matched with these results. Material removal rate (MRR) decreased with BTA concentration and static etch rate also showed same trend. Consequently, adjustment of BTA concentration can give us control of step height variation and furthermore, this can be applicable for Cu pattern CMP.

• Journal of Power Electronics
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• 제16권3호
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• pp.1226-1235
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• 2016

For wearable health monitoring systems, a fundamental problem is the limited space for storing energy, which can be translated into a short operational life. In this paper, a highly efficient active voltage doubling rectifier with a wide input range for micro-piezoelectric energy harvesting systems is proposed. To obtain a higher output voltage, the Dickson charge pump topology is chosen in this design. By replacing the passive diodes with unbalanced-biased comparator-controlled active counterparts, the proposed rectifier minimizes the voltage losses along the conduction path and solves the reverse leakage problem caused by conventional comparator-controlled active diodes. To improve the rectifier input voltage sensitivity and decrease the minimum operational input voltage, two low power common-gate comparators are introduced in the proposed design. To keep the comparator from oscillating, a positive feedback loop formed by the capacitor C is added to it. Based on the SMIC 0.18-μm standard CMOS process, the proposed rectifier is simulated and implemented. The area of the whole chip is 0.91×0.97 mm², while the rectifier core occupies only 13% of this area. The measured results show that the proposed rectifier can operate properly with input amplitudes ranging from 0.2 to 1.0V and with frequencies ranging from 20 to 3000 Hz. The proposed rectifier can achieve a 92.5% power conversion efficiency (PCE) with input amplitudes equal to 0.6 V at 200 Hz. The voltage conversion efficiency (VCE) is around 93% for input amplitudes greater than 0.3 V and load resistances larger than 20kΩ.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2000년도 하계학술대회 논문집 C
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• pp.2116-2118
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• 2000

In the technique of Q-switching, very fast electronically controlled optical shutters can be made by using the electro-optic effect in crystals or liquids. The driver for the Pockels cell must be a high-speed, high-voltage switch which also must deliver a sizeable current. Common switching techniques include the use of vacuum tubes, cold cathode tubes, thyratrons, SCRs, and avalanche transistors. Semiconductor devices such as SCRs, avalanche transistors, and MOSFETs have been successfully employed to drive Pockels cell Q-switch. In this study, a simple driver for the Pockels cell Q-switch was developed by using SCRs, pulse transformer and TTL ICs. The Pockels cell Q-switch which was operated by this driver was employed in pulsed Nd:YAG laser system to investigate the operating characteristics of this Q-switch. And we have investigated the output characteristics of this Q-switch as a function of the Q-switch delay time to Xe flashlamp current on.

• Korean Chemical Engineering Research
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• 제53권3호
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• pp.401-406
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• 2015

게터는 반도체와 초소형 전자패키지 소자 내부의 수소와 수증기 같은 기체를 흡착하여 기기 작동 시 방해 기체를 제거하는 기능을 한다. 본 연구에서는 재료와 공정 측면에서 높은 가격 경쟁력을 갖는 게터로, 실리콘 기판에 올라간 다공성 알루미나 구조체를 제조하는 연구를 진행하였다. 기공의 크기가 조절된 양극산화 알루미나(AAO)는 높은 비표면적을 가지며 표면에 OH-기를 다수 포함하므로 높은 효율을 갖는 수분 흡착제로 사용되었다. 등온 수분 흡탈착 곡선으로 분석한 수분 흡착도는 상대습도 35%일 때 2.02%로 우수한 성능을 나타내었다. 즉, 저온에서 사용가능하며, 추가 열원이 필요하지 않아 박막구조의 소형화가 용이하여 내부 손상 및 오염을 방지할 수 있는 게터재를 합성하였다.

• JSTS:Journal of Semiconductor Technology and Science
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• 제14권1호
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• pp.109-116
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• 2014

This paper presents a high-efficiency digital class-D audio amplifier using a composite interpolation filter for portable audio devices. The proposed audio amplifier is composed of an interpolation filter, a delta-sigma modulator, and a class-D output stage. To reduce power consumption, the designed interpolation filter has an optimized composite structure that uses a direct-form symmetric and Lagrange FIR filters. Compared to the filters with homogeneous structures, the hardware cost and complexity are reduced by about half by the optimization. The coefficients of the digital delta-sigma modulator are also optimized for low power consumption. The class-D output stage has gate driver circuits to reduce shoot-through current. The implemented class-D audio amplifier exhibited a high efficiency of 87.8 % with an output power of 57 mW at a load impedance of $16{\Omega}$ and a power supply voltage of 1.8 V. An outstanding signal-to-noise ratio of 90 dB and a total harmonic distortion plus noise of 0.03 % are achieved for a single-tone input signal with a frequency of 1 kHz.

• 대한전자공학회논문지TC
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• 제45권8호
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• pp.98-105
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• 2008

FlexRay는 높은 유연성과 신뢰성을 갖는 고속의 통신프로토콜이다. 자동차회사와 반도체회사들에 의해 개발되었고 x-by-wire 시스템을 이용하여 차량 내 LAN으로 구현된다. FlexRay는 차량 내 전자 장치간의 통신을 위해 고속의 시리얼 통신, time triggered bus, fault tolerant 통신을 제공한다. 본 논문에서는 먼저 SDL(Specification and Description Language)을 이용하여 FlexRay communication controller와 bus guardian 프로토콜 규격과 기능 부분을 설계한다. 다음 설계한 SDL 소스를 기반으로 Verilog HDL을 이용하여 하드웨어로 설계한다. 설계한 FlexRay 시스템은 Samsung $0.35{\mu}m$ 공정을 이용하여 합성하였으며, 그 결과 76 MHz의 속도로 동작하는 것으로 나타났다. 또한 FlexRay 시스템의 동작을 확인하기 위해 차량에 적용되는 자동차 경보 시스템에 응용하였다. FlexRay 시스템은 ALTERA Excalibur ARM EPAX4F672C3을 이용하여 검증하였으며 성공적으로 동작함을 확인하였다.

• 전기전자학회논문지
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• 제16권2호
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• pp.131-137
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• 2012

본 논문에서는 영전압 스위칭(ZVS)과 전류불연속 모드(DCM)에 의한 새로운 고효율의 DC-DC 컨버터에 대해 연구된다. 일반적으로 고효율의 컨버터를 만들기 위해서는 전력변환기내에 사용된 반도체 스위칭 소자의 손실을 최소화하여 이루어진다. 제안한 컨버터는 DCM에 의하여 스위치의 턴-온 동작을 영전류 스위칭(ZCS)으로 만들고, 또한 새로운 유사공진 회로를 접목하여 컨버터의 고효율을 실현시킨다. 제안한 컨버터에 사용된 제어용 스위칭 소자들은 유사공진 기법에 의해 소프트 스위칭, 즉 ZVS와 ZCS으로 동작시키고, 이에 따른 제어용 스위칭 소자들은 전압과 전류의 스트레스 없이 동작한다. 그 결과 제안한 컨버터는 스위칭 손실의 저감에 의해 고효율로 구동된다. 제안한 DCM-ZVS 컨버터의 소프트 스위칭 동작과 시스템 효율은 디지털 시뮬레이션과 실험결과를 통해 그 타당성이 입증된다.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2009년도 춘계학술발표대회
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• pp.22.2-22.2
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• 2009

Currently, metal silicides become increasingly more essential part as a contact material in complimentary metal-oxide-semiconductor (CMOS). Among various silicides, NiSi has several advantages such as low resistivity against narrow line width and low Si consumption. Generally, metal silicides are formed through physical vapor deposition (PVD) of metal film, followed by annealing. Nanoscale devices require formation of contact in the inside of deep contact holes, especially for memory device. However, PVD may suffer from poor conformality in deep contact holes. Therefore, Atomic layer deposition (ALD) can be a promising method since it can produce thin films with excellent conformality and atomic scale thickness controllability through the self-saturated surface reaction. In this study, Ni thin films were deposited by thermal ALD using bis(dimethylamino-2-methyl-2-butoxo)nickel [Ni(dmamb)2] as a precursor and NH3 gas as a reactant. The Ni ALD produced pure metallic Ni films with low resistivity of 25 $\mu{\Omega}cm$. In addition, it showed the excellent conformality in nanoscale contact holes as well as on Si nanowires. Meanwhile, the Ni ALD was applied to area-selective ALD using octadecyltrichlorosilane (OTS) self-assembled monolayer as a blocking layer. Due to the differences of the nucleation on OTS modified surfaces toward ALD reaction, ALD Ni films were selectively deposited on un-coated OTS region, producing 3 ${\mu}m$-width Ni line patterns without expensive patterning process.

• 한국태양에너지학회 논문집
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• 제40권5호
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• pp.23-34
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• 2020

Concentrator photovoltaic (CPV) system consists of high-quality complex optical elements, mechanical devices, and electronics components and can have the advantages of high integration and high-efficiency energy sources. III-V compound semiconductor cells have proven performance based on high reliability in the aerospace field, but have characteristics that require absolute support of the balance of systems (BOS) such as solar position trackers, receivers with heat sinks, and housing instruments. To determine the optimum parameters of secondary optical elements (SOEs) design for CPV systems, we designed three types of CPV modules, classified as non-SOEs type, reflective mirror type, and CPC lens type. We measured the I-V and P-V characteristics of the prototype CPV modules with the angle of inclination varying from 0° to 12° and with a 500-magnification Fresnel lens. The experimental results assumed misalignment of the solar position tracker or module design of pinpoint accuracy. As a result, at the 0° tilt angle, the CPC lens produced lower power due to the quartz transmittance ratio compared to that by other SOEs. However, for tilt angles greater than 3°, the CPC lens type module achieved high efficiency and stability. This study is expected to help design high-performance CPV systems.

• Journal of electromagnetic engineering and science
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• 제17권2호
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• pp.105-107
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• 2017

The self-biasing circuit through a feedback resistor is applied to a gallium nitride (GaN) distributed power amplifier (PA) monolithic microwave circuit (MMIC). The self-biasing circuit is a useful scheme for biasing depletion-mode compound semiconductor devices with a negative gate bias voltage, and is widely used for common source amplifiers. However, the self-biasing circuit is rarely used for PAs, because the large DC power dissipation of the feedback resistor results in the degradation of output power and power efficiency. In this study, the feasibility of applying a self-biasing circuit through a feedback resistor to a GaN PA MMIC is examined by using the high operation voltage of GaN high-electron mobility transistors. The measured results of the proposed GaN PA are the average output power of 41.1 dBm and the average power added efficiency of 12.2% over the 6-16 GHz band.