• Title/Summary/Keyword: Semiconductor devices

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Analysis for Design of a High Vacuum Turbomolecular Pump (고진공 터보분자 펌프의 설계 및 해석기술)

  • 이우영;국정한;박종권;구본학
    • Journal of the Semiconductor & Display Technology
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    • v.1 no.1
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    • pp.41-45
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    • 2002
  • In modem manufacturing, new applations and technologies demand smaller, and functional devices to replace large systems. As miniaturization becomes a necessity, many companies are interested in small pumps for use in creating ultra-high vacuum, but past efforts to develop such systems have failed due to problems with vibration, stress, heat and power consumption. This paper shows analysis-based design techniques for high vacuum turbomolecular pump by finite element analysis.

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Fabrication of Si Nano Dots by Using Diblock Copolymer Thin Film (블록 공중합체 박막을 이용한 실리콘 나노점의 형성)

  • Kang, Gil-Bum;Kim, Seong-Il;Kim, Young-Hwan;Park, Min-Chul;Kim, Yong-Tae;Lee, Chang-Woo
    • Journal of the Microelectronics and Packaging Society
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    • v.14 no.2 s.43
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    • pp.17-21
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    • 2007
  • Dense and periodic arrays of holes and Si nano dots were fabricated on silicon substrate. The nanopatterned holes were approximately $15{\sim}40nm$ wide, 40 nm deep and $40{\sim}80\;nm$ apart. To obtain nano-size patterns, self?assembling diblock copolymer were used to produce layer of hexagonaly ordered parallel cylinders of polymethylmethacrylate (PMMA) in polystyrene(PS) matrix. The PMMA cylinders were degraded and removed with acetic acid rinse to produce a PS. $100\;{\AA}-thick$ Au thin film was deposited by using e-beam evaporator. PS template was removed by lift-off process. Arrays of Au nano dots were transferred by using Fluorine-based reactive ion etching(RE). Au nano dots were removed by sulfuric acid. Si nano dots size and height were $30{\sim}70\;nm$ and $10{\sim}20\;nm$ respectively.

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Transient Liquid Phase (TLP) Bonding of Device for High Temperature Operation (고온동작소자의 패키징을 위한 천이액상확산접합 기술)

  • Jung, Do-hyun;Roh, Myung-hwan;Lee, Jun-hyeong;Kim, Kyung-heum;Jung, Jae Pil
    • Journal of the Microelectronics and Packaging Society
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    • v.24 no.1
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    • pp.17-25
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    • 2017
  • Recently, research and application for a power module have been actively studied according to the increasing demand for the production of vehicles, smartphones and semiconductor devices. The power modules based on the transient liquid phase (TLP) technology for bonding of power semiconductor devices have been introduced in this paper. The TLP bonding has been widely used in semiconductor packaging industry due to inhibiting conventional Pb-base solder by the regulation of end of life vehicle (ELV) and restriction of hazardous substances (RoHS). In TLP bonding, the melting temperature of a joint layer becomes higher than bonding temperature and it is cost-effective technology than conventional Ag sintering process. In this paper, a variety of TLP bonding technologies and their characteristics for bonding of power module have been described.

Thermal Characteristics Analysis of Power Device for Motor Driving Power Converter (전동기 구동용 전력 변환기에 대한 전력소자의 열적 특성 해석)

  • Cho, Moontaek;Lee, Chungsik;Lee, SangBock
    • Journal of the Korean Society of Radiology
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    • v.6 no.6
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    • pp.495-498
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    • 2012
  • In this paper, the basic behavior of the environment and the driving time as a prediction of the lifetime of the power semiconductor devices were recorded. Radiator of a power device driving time and temperature operating environment, including cumulative record by the controller of the power converter, and doing it so you can see the power semiconductor devices for the life of the structure that the size of the change in the temperature of the semiconductor chip and the number of iterations to maintenance warranty period because of a lifetime by forecasting or replacement can be made at the appropriate time that is considered.

Temperature Analysis of Electrostatic Chuck for Cryogenic Etch Equipment (극저온 식각장비용 정전척 쿨링 패스 온도 분포 해석)

  • Du, Hyeon Cheol;Hong, Sang Jeen
    • Journal of the Semiconductor & Display Technology
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    • v.20 no.2
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    • pp.19-24
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    • 2021
  • As the size of semiconductor devices decreases, the etching pattern becomes very narrow and a deep high aspect ratio process becomes important. The cryogenic etching process enables high aspect ratio etching by suppressing the chemical reaction of reactive ions on the sidewall while maintaining the process temperature of -100℃. ESC is an important part for temperature control in cryogenic etching equipment. Through the cooling path inside the ESC, liquid nitrogen is used as cooling water to create a cryogenic environment. And since the ESC directly contacts the wafer, it affects the temperature uniformity of the wafer. The temperature uniformity of the wafer is closely related to the yield. In this study, the cooling path was designed and analyzed so that the wafer could have a uniform temperature distribution. The optimal cooling path conditions were obtained through the analysis of the shape of the cooling path and the change in the speed of the coolant. Through this study, by designing ESC with optimal temperature uniformity, it can be expected to maximize wafer yield in mass production and further contribute to miniaturization and high performance of semiconductor devices.

Electrolyzed Water Cleaning for Semiconductor Manufacturing (전리수를 이용한 반도체 세정 공정)

  • 류근걸;김우혁;이윤배;이종권
    • Journal of the Semiconductor & Display Technology
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    • v.2 no.3
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    • pp.1-6
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    • 2003
  • In the rapid changes of the semiconductor manufacturing technologies for early 21st century, it may be safely said that a kernel of terms is the size increase of Si wafer and the size decrease of semiconductor devices. As the size of Si wafers increases and semiconductor device is miniaturized, the units of cleaning processes increase. A present cleaning technology is based upon RCA cleaning which consumes vast chemicals and ultra pure water (UPW) and is the high temperature process. Therefore, this technology gives rise to environmental issue. To resolve this matter, candidates of advanced cleaning processes have been studied. One of them is to apply the electrolyzed water. In this work, electrolyzed water cleaning was compared with various chemical cleaning, using Si wafer surfaces by changing cleaning temperature and cleaning time, and especially, concentrating upon the contact angle. It was observed that contact angle on surface treated with Electrolyzed water cleaning was $4.4^{\circ}$ without RCA cleaning. Amine series additive of high pKa (negative logarithm of the acidity constant) was used to observe the property changes of cathode water.

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Development of a Transducer for Cursor Control by use of Semiconductor Strain Gage (반도체 게이지를 이용한 360 방향의 트랜스듀서 개발)

  • 김민석;송후근;이정태;김성배;이명훈
    • Proceedings of the Korean Society of Precision Engineering Conference
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    • 2003.06a
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    • pp.1430-1433
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    • 2003
  • Transducers, which are incorporated in control devices for fixed wing aircraft, land vehicles. and weapon systems were designed and manufactured by use of semiconductor strain gages. These transducers consist of three parts; flange mounts, sensing rods, and semiconductor strain gages. In this investigation, we designed cylindrical sensing rods with high sensitivity and developed installation procedures of semiconductor strain gages. The semiconductor strain gage has hish gage factor such that it can produce high resistance change in spite of low strain, but it is so small and fragile that one should handle carefully and sophisticated installation method is needed for good performances. The prototype transducers are manufactured, and then tested about three important factors: sensitivity, linearity, and hysteresis. We got results or 0.084 V/N sensitivity, 0.2% nonlinearity, and 0.5% hysteresis.

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A Study on the Inner Defect Inspection for Semiconductor Package by ESPI (ESPI를 이용한 반도체 패키지 내부결함 검사에 관한 연구)

  • Jung, Seung-Tack;Kim, Koung-Suk;Yang, Seung-Pil;Jung, Hyun-Chul;Lee, You-Hwang
    • Proceedings of the KSME Conference
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    • 2003.11a
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    • pp.1442-1447
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    • 2003
  • Computer is a very powerful machine which is widely using for data processing, DB construction, peripheral device control, image processing etc. Consequently, many researches and developments have progressed for high performance processing unit, and other devices. Especially, the core units such as semiconductor parts are rapidly growing so that high-integration, high-performance, microminiat turization is possible. The packaging in the semiconductor industry is very important technique to de determine the performance of the system that the semiconductor is used. In this paper, the inspection of the inner defects such as delamination, void, crack, etc. in the semiconductor packages is studied. ESPI which is a non-contact, non-destructive, and full-field inspection method is used for the inner defect inspection and its results are compared with that of C-Scan method.

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Correlation between Capacitance and Structure-optical Properties of Semiconductor with Zero Leakage Current (누설전류 Zero인 반도체 물질의 구조적 광학적 특성과 전도성과의 상관성)

  • Yun, Tae Hwan;Oh, Teresa
    • Journal of the Semiconductor & Display Technology
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    • v.14 no.3
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    • pp.27-31
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    • 2015
  • It was the electrical properties of ZnS treated by the annealing in a vaccum and an atmosphere conditions to reseached the leakage current effect of semiconductor devices. Most samples were shown the non-linear with unipolar properties, but the ZnS annealed at $100^{\circ}C$ in a vaccum was only observed no leakage current in a range of -20 V< voltage < 15 V. The crystallinity of ZnS with no leakage current was improved and optical property was also improved. Because the ambipolar characteristics and low leakage currents originated from the extension effect of a depletion width by electron-hole combination in the depletion layer.