• Journal of the Semiconductor & Display Technology
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• v.20 no.4
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• pp.146-150
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• 2021

Plasma information based virtual metrology (PI-VM) that predicts wafer-to-wafer etch rate variation after wet cleaning of plasma facing parts was developed. As input parameters, plasma information (PI) variables such as electron temperature, fluorine density and hydrogen density were extracted from optical emission spectroscopy (OES) data for etch plasma. The PI-VM model was trained by stepwise variable selection method and multi-linear regression method. The expected etch rate by PI-VM showed high correlation coefficient with measured etch rate from SEM image analysis. The PI-VM model revealed that the root cause of etch rate variation after the wet cleaning was desorption of hydrogen from the cleaned parts as hydrogen combined with fluorine and decreased etchant density and etch rate.

• Laser Solutions
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• v.4 no.3
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• pp.22-29
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• 2001

A development of new surface clwaning technol ogies such as laser and aerosol in paeallel with the improvement of conventional wet mwthods becomes more essential in semiconductor industry due the confrontation of new challenges such as significant device shrink, environmental foralum inum do not work for copper as a new interconnection material, and more effective cleaning tools are required with decreasing the feature size less than 0.13 ㎛ as well as increasing the wafer size from 200 ㎜ to 300 ㎜. In this article, various cleaning techniques increasing laser cleaning are compared methodolgically hi order to understand their unique characteristics such as advantages and disadvantages according to the current clean ing issues. In particular, the current state of art of laser technique for semiconductors md prospects as a try cleaning method are described.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2003.10a
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• pp.63-63
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• 2003

• Proceedings of the Korean Society of Laser Processing Conference
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• 2002.11a
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• pp.65-67
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• 2002

• 연구논문집
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• s.33
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• pp.99-109
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• 2003

Recently the utilization of the ozone dissolved de-ionized water(DIW-$O_3$) in semiconductor wet cleaning process and photoresist stripping process to replace the conventional sulfuric acid and hydro peroxide mixture(SPM) method has been studied. In this paper, we propose the water-electrode type ozone generator which has the characteristics of the high concentration and purity to produce the high concentration DIW-$O_3$ for the photoresist strip process in the semiconductor fabrication. The proposed ozone generator has the dual dielectric tube structure of silent discharge type and the water is both used to electrode and cooling water. Through this study, we obtained the results of the 10.3 wt% of ozone gas concentration at the oxygen gas of 0.5 [liter/min.] and the DIW-$O_3$ concentration of 79.5 ppm.. Through the photoresist stripping test using the produced DIW-$O_3$, we confirmed that the photoresist coated on the silicon wafer was removed effectively in the 12 minutes.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.04b
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• pp.1-5
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• 2000

As the semiconductor devices are miniaturized, the number of the unit cleaning processes increases. In order to processes by conventional RCA cleaning process, the consumption of volume of liquid chemical and DI water became huge. Therefore, the problem of environmental issues are evolved by the increased consumption of chemicals. To resolve this matter, an advanced cleaning process by Electrolyzed Water was studied in this work. The electrolyzed water was made by an electrolysis equipment which was composed of three chambers of anode, cathode, and middle chambers. In the case of electrolyzed water with electrolytes in the middle chamber, oxidatively acidic water of anode and reductively alkaline water of cathode were obtained. The oxidation/reduction potentials and pH of anode water and cathode water were measured to be +l000mV and 4.8, and -530mV and 6.3, respectively. The Si-wafers contaminated with metallic impurities were cleaning with the electrolyzed water. To analysis the amounts of metallic impurities on Si-water surfaces, ICP-MS(Inductively Coupled Plasma-Mass spectrometer) was introduced. From results of ICP-MS measurements, it was concluded that the ability of electrolyzed water was equivalent to that of the conventional RCA cleaning.

• Particle and aerosol research
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• v.20 no.3
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• pp.103-114
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• 2024

Liquid-spray cleaning has recently been considered an eco-friendly cleaning method in the semiconductor industry because it efficiently cleans contaminated wafers without using any chemicals, relying instead on direct momentum transfer through dropwise impaction. Previous researches are mainly divided into two groups, such as modelling studies predicting the cleaning effect of single-droplet impact and experimental works for measuring particle removal efficiency (PRE) that essentially accompanies multiple droplet impacts. Here, we developed a Monte Carlo model to connect the single-droplet based model to the ensemble effect of multiple droplet impacts in real cleaning experiments, and thereby predict the PREs from the impaction conditions of droplets and the diameters of target particles. Additionally, we developed a two-fluid supersonic nozzle system, capable of spraying 10-60 ㎛ droplets under control of impact velocity, with aims to validate the model predictions of PREs for 15-130 nm contaminant particles on a Si wafer. We confirmed that the model predictions are in agreement with the experimental data within 7% and the cleaning time needs to be controlled for ensuring the efficient removal of particles.

• Proceedings of the Materials Research Society of Korea Conference
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• 2005.05a
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• pp.56-56
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• 2005

• Journal of the Semiconductor & Display Technology
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• v.7 no.4
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• pp.29-33
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• 2008

Rapid increase of integrity for recent semiconductor industry highly demands the development of removal technology of contaminated particles in the scale of a few microns or even smaller. It is known that the surface cleaning technology using $CO_2$ snow has its own merits of high efficiency. However, the detailed removal mechanism of particles using this technology is not yet fully understood due to the lack of sophisticated research endeavors. The detachment mechanism of particles from the substrates is known to be belonged in four types; rebounding, sliding, rolling and lifting. In this study, a modeling effort is performed to explain the detachment mechanism of a contaminant particle due to the rebounding caused by the vertical collision of the $CO_2$ snow. The Hertz and Johnson-Kendall-Roberts(JKR) theories are employed to describe the contact, adhesion and deformation mechanisms of the particles on a substrate. Numerical simulations are followed for several representative cases, which provide the perspective views on the dynamic characteristics of the particles as functions of the material properties and the initial inter-particle collision velocity.

• Journal of Surface Science and Engineering
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• v.54 no.6
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• pp.365-370
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• 2021

In this research, we proceeded with research on plasma resistance of the cleaning process of APS(Atmospheric Plasma Spray)-Y₂O₃ coated parts used for semiconductor and display plasma process equipment. CF₄, O₂, and Ar mixed gas were used for the plasma environment, and respective alconox, surfactant, and piranha solution was used for the cleaning process. After APS-Y₂O₃ was exposed to CF₄ plasma, the surface changed from Y₂O₃ to YF₃ and a large amount of carbon was deposited. For this reason, the plasma corrosion resistance was lowered and contamination particles were generated. We performed a cleaning process to remove the defect-inducing surface YF₃ layer and carbon layer. Among three cleaning solutions, the piranha cleaning process had the highest detergency and the alconox cleaning process had the lowest detergency. Such results could be confirmed through the etching amount, morphology, composition, and accumulated contamination particle analysis results. Piranha cleaning process showed the highest detergency, but due to the very large thickness reduction, the base metal was exposed and a large number of contaminated particles were generated. In contrast, the surfactant cleaning process exhibit excellent properties in terms of surface detergency, etching amount, and accumulated contamination particle analysis.