• Journal of the Korean Institute of Telematics and Electronics S
• /
• v.35S no.6
• /
• pp.55-65
• /
• 1998

In industrial fields, RTP(rapid thermal processing) system is widely used for improving the oxidation and the annealing in semiconductor manufacturing process. The main control factors are temperature control of wafer and uniformity in the wafer. In this paper, we propose an $H^{\infty}$ controller design of RTP system satisfying robust stability and performance using weighted mixed sensitivity miniimization and loop shaping technique. And we need reduction technique because of the difficulty of implementation with the obtained high order controller for original model and reduced models, namely, Hankel, square-root balanced, and Schur balanced methods. An example is proposed to show the validity of the proposed method.

• Proceedings of the Materials Research Society of Korea Conference
• /
• 2010.05a
• /
• pp.49.1-49.1
• /
• 2010

The particle generation during the plasma enhanced process is highly considered as serious problem in the semiconductor manufacturing industry. The material for the plasma processing chamber requires the plasma etching characteristics which are homogeneously etched surface and low plasma etching depth for preventing particulate contamination and high durability. We found that the materials without grain boundaries can prevent the particle generation. Therefore, the amorphous material with the low plasma etching rate may be the best candidate for the plasma processing chamber instead of the polycrystalline materials such as yttria and alumina. Three glasses based on $SiO_2$ and $Al_2O_3$ were prepared with various rare-earth elements (Gd, Y and La) which are same content in the glass. The glasses were plasma etched in the same condition and their plasma etching rate was compared including reference materials such as Si-wafer, quartz, yttria and alumina. The mechanical and thermal properties of the glasses were highly related with cationic field strength (CFS) of the rare-earth elements. We assumed that the plasma etching resistance may highly contributed by the thermal properties of the fluorine byproducts generated during the plasma exposure and it is expected that the Gd containing glass may have the highest plasma etching resistance due to the highest sublimation temperature of $GdF_3$ among three rare-earth elements (Gd, Y and La). However, it is found that the plasma etching results is highly related with the mechanical property of the glasses which indicates the cationic field strength. From the result, we conclude that the glass structure should be analyzed and the plasma etching test should be conducted with different condition in the future to understand the plasma etching behavior of the glasses perfectly.

• Journal of Digital Contents Society
• /
• v.14 no.1
• /
• pp.35-40
• /
• 2013

The use of slurry with a mix of abrasives and coolant for making Wire Saw in the photovoltaic industry has sharply increased with the semiconductor wafer. In this paper, the slurry was isolated, purified and dried by microwave drying method with high-purity silicon carbide powder obtained through chemical processing. Dried slurry bulk was first pulverized and chemical treatment was applied to produce powder. The produced slurry powder was then analyzed by going through the following analysis; thermal analysis, particle size analyses: SEM shots, elemental analysis, XRF and XRD. The results of this study found the recovery rate of the power obtained though the chemical processing to be higher than the one obtained from mineral processing. The results anticipate infrastructure building and active responses to increasingly stronger domestic and international environmental regulations through the integration and recycling of large amounts of slurry in the photovoltaic industry.

• Journal of the Korean Society for Precision Engineering
• /
• v.20 no.7
• /
• pp.233-240
• /
• 2003

Recently, the world are preparing for new revolution, called as If (Information Technology), NT (Nano-Technology), and BT (Bio-Technology). NT can be applied to various fields such as semiconductor-micro technology. Ultra precision processing is required for NT in the field of mechanical engineering. Recently, together with radical advancement of electronic and photonics industry, necessity of ultra precision processing is on the increase for the manufacture of various kernel parts. Therefore, in this paper, stability of ultra precision cutting unit is investigated, this unit is the kernel unit in ultra precision processing machine. According to alteration of shape and material about hinge, stability investigation is performed. In this paper, hinge shapes of micro stage in UPCU(Ultra Precision Cutting Unit) are designed as two types, where, hinge shapes are composed of round and rectangularity. Elasticity and strength are analyzed about micro stage, according to hinge shapes, by FE analysis. Micro stage in ultra precision processing machine has to keep hinge shape under cutting condition with 3-component force (cutting component, axial component, radial component) and to reduce modification against cutting force. Then we investigated its elasticity and its strength against these conditions. Material of micro stage is generally used to duralumin with small thermal deformation. But, stability of micro stage is investigated, according to elasticity and strength due to various materials, by FE analysis. Where, Used materials are composed of aluminum of low strength and cooper of medium strength and spring steel of high strength. Through this stability investigation, trial and error is reduced in design and manufacture, at the same time, we are accumulated foundation data for unit control.

• International Journal of Internet, Broadcasting and Communication
• /
• v.12 no.2
• /
• pp.30-36
• /
• 2020

We demonstrated a successful fabrication of 4" Gallium Nitride (GaN)/Diamond High Electron Mobility Transistors (HEMTs) incorporated with Inner Slot Via Hole process. We made in manufacturing technology of 4" GaN/Diamond HEMT wafers in a compound semiconductor foundry since reported [1]. Wafer thickness uniformity and wafer flatness of starting GaN/Diamond wafers have improved greatly, which contributed to improved processing yield. By optimizing Laser drilling techniques, we successfully demonstrated a through-substrate-via process, which is last hurdle in GaN/Diamond manufacturing technology. To fully exploit Diamond's superior thermal property for GaN HEMT devices, we include Aluminum Nitride (AlN) barrier in epitaxial layer structure, in addition to conventional Aluminum Gallium Nitride (AlGaN) barrier layer. The current collapse revealed very stable up to Vds = 90 V. The trapping behaviors were measured Emission Microscope (EMMI). The traps are located in interface between Silicon Nitride (SiN) passivation layer and GaN cap layer.

• 한국신재생에너지학회:학술대회논문집
• /
• 2009.11a
• /
• pp.396-396
• /
• 2009

Chalcopyrite semiconductor $CuInSe_2$ nanoparticles were prepared using a low temperature colloidal route by reacting the starting materials (CuI, $InI_3$ and $Na_2Se$) in solvents. After synthesised $CuInSe_2$ nanoparticles precursors were mixed with organic binder for the viscosity of the precursor slurry to be suitable for the doctor blade method. The mixture of $CuInSe_2$ and binder was deposited onto molybdenum-coated sodalime glass substrates to form thin film. The precursor thin films were preheated on the hot plate to remove remaining solvents and binder material. After subsequent thermal processing of the thin film under a selenium ambient, $CuInSe_2$ absorber layer with grain size significantly lager than that of the nanoparticles was formed.

• Journal of the Korean Society of Manufacturing Process Engineers
• /
• v.17 no.1
• /
• pp.16-22
• /
• 2018

Silicon carbide (SiC) is used in various semiconductor processes because it has superior thermal, mechanical, and electrical characteristics as well as higher chemical and corrosion resistance than existing materials. Due to these characteristics, various manufacturing technologies have been developed for SiC. A recent development among these technologies is Chemical Vapor Deposition SiC (CVD-SiC). Many studies have been carried out on the processing and manufacturing of CVD-SiC due to its different material characteristics compared to existing materials like RB-SiC or Sintered-SiC. CVD-SiC is physically stable and has excellent chemical and corrosion resistance. However, there is a problem with increasing the thickness, because it is manufactured through a deposition process. Additionally, due to its high strength and hardness, it is difficult to subject to machining.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2006.06a
• /
• pp.61-62
• /
• 2006

In this paper, it was demonstrated that organic thin- film transistors (OTFTs) were fabricated with the organic adhesion layer between an organic semiconductor and a gate insulator by vapor deposition polymerization (VDP) processing. In order to form polymeric film as an adhesion layer, VDP process was also introduced instead of spin-coating process, where polymeric film was co-deposited by high-vacuum thermal evaporation from 6FDA and ODA followed by curing. The saturated slop in the saturation region and the subthreshold nonlinearity in the triode region were c1early observed in the electrical output characteristics in our organic thin film transistors using the staggered-inverted top-contact structure. Field effect mobility, threshold voltage, and on-off current ratio in 15-nm-thick organic adhesion layer were about $0.5\;cm^2/Vs$, -1 V, and $10^6$, respectively. We also demonstrated that threshold voltage depends strongly on the delay time when a gate voltage has been applied to bias stress.

• Journal of the Korea Academia-Industrial cooperation Society
• /
• v.7 no.3
• /
• pp.344-349
• /
• 2006

The low-temperature processing is very important for fabrication of the very large scale ($60{\sim}70nm$) semiconductor devices since the submicron transistors are sensitive to the thermal budget. Hence, in this work, we propose a noble low-temperature LPCVD (Low-Pressure Chemical Vapor Deposition) process for the $SiO_2$ film and evaluate the electrical reliability of the LTO (Low-Temperature Oxide) by making the capacitors with ONO (Oxide/Nitride/Oxide) structure. The leak current of the LTO was similar to that of the high-temperature wet oxide until the electric field was lower than 5 MV/cm. However, when the electric field was higher, the LTO showed much better characteristics.

• Journal of Microbiology and Biotechnology
• /
• v.28 no.6
• /
• pp.957-967
• /
• 2018

A novel $g-C_3N_4$/ZnO/stellerite (CNZOS) hybrid photocatalyst, which was synthesized by coupled hydro thermal-thermal polymerization processing, was applied as an efficient visible-light-driven photocatalyst against Staphylococcus aureus. The optimum synthesized hybrid photocatalyst showed a sandwich structure morphology with layered $g-C_3N_4$ (doping amount: 40 wt%) deposited onto micron-sized ZnO/stellerite particles (ZnO average diameter: ~18 nm). It had a narrowing band gap (2.48 eV) and enlarged specific surface area ($23.05m^2/g$). The semiconductor heterojunction effect from ZnO to $g-C_3N_4$ leads to intensive absorption of the visible region and rapid separation of the photogenerated electron-hole pairs. In this study, CNZOS showed better photocatalytic disinfection efficiency than $g-C_3N_4/ZnO$ powders. The disinfection mechanism was systematically investigated by scavenger-quenching methods, indicating the important role of $H_2O_2$ in both systems. Furthermore, $h^+$ was demonstrated as another important radical in oxidative inactivation of the CNZOS system. In respect of the great disinfection efficiency and practicability, the CNZOS heterojunction photocatalyst may offer many disinfection applications.