• Journal of the Korean Electrochemical Society
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• v.2 no.4
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• pp.202-208
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• 1999

Composite cathodes of $50/50\;vol\%$ LSM-YSZ $(La_{-x}Sr_xMnO_3-yttria\;stabilized\;zirconia)$ were deposited onto dense YSZ electrolytes by colloidal deposition technique. The cathode characteristics were then examined by scanning electron microscopy (SEM) and studied by ac-impedance spectroscopy (IS). The conditioning effects on LSM-YSZ cathodes were seen and remedies for these effects were noted in order to improve the performance of a solid oxide fuel cell (SOFC). The effects of temperature on impedance, surface contamination on cathode bonding to YSZ electrolyte, changing Pt paste, aerosol spray technique applied to curved surface on microstructure and cell to cell variability were solved by testing at $900^{\circ}C$, sanding the YSZ surface, using only one batch of Pt paste, using flat YSZ plates and using consistent procedures and techniques, respectively. And then, reproducible impedance spectra were confirmed by using the improved cell and the typical spectra measured for an (air)LSM-YSZ/YSZ/LSM-YSZ(air) cell at $900^{\circ}C$ were composed of two depressed arcs. Impedance characteristics of the LSM-YSZ cathodes were also affected by experimental conditions such as catalytic interlayer, composite cathode compositions and applied current.

• Korean Journal of Materials Research
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• v.22 no.10
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• pp.545-551
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• 2012

In semiconductor manufacturing, the circuit integrity of packaged BGA devices is tested by measuring electrical resistance using test sockets. Test sockets have been reported to often fail earlier than the expected life-time due to high contact resistance. This has been attributed to the formation of Sn oxide films on the Au coating layer of the probe pins loaded on the socket. Similar to contact failure, and known as "fretting", this process widely occurs between two conductive surfaces due to the continual rupture and accumulation of oxide films. However, the failure mechanism at the probe pin differs from fretting. In this study, the microstructural processes and formation mechanisms of Sn oxide films developed on the probe pin surface were investigated. Failure analysis was conducted mainly by FIB-FESEM observations, along with EDX, AES, and XRD analyses. Soft and fresh Sn was found to be transferred repeatedly from the solder bump to the Au surface of the probe pins; it was then instantly oxidized to SnO. The $SnO_2$ phase is a more stable natural oxide, but SnO has been proved to grow on Sn thin film at low temperature (< $150^{\circ}C$). Further oxidation to $SnO_2$ is thought to be limited to 30%. The SnO film grew layer by layer up to 571 nm after testing of 50,500 cycles (1 nm/100 cycle). This resulted in the increase of contact resistance and thus of signal delay between the probe pin and the solder bump.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.11 no.11
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• pp.4121-4128
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• 2010

A probe card is used in testing semiconductor wafers. It must maintain a precise location tolerance for a fine pitch due to highly densified chips. However, high heat transferred from its lower chuck causes thermal deformations of the probe card. Vertical deformation due to the heat will bring contact problems to the pins in the probe card, while horizontal deformation will cause positional inaccuracies. Therefore, probe cards must be designed with proper materials and structures so that the thermal deformations are within allowable tolerances. In this paper, heat transfer analyses under realistic loading conditions are simulated using ANSYS$^{TM}$ finite element analysis program. Thermal deformations are calculated based on steady-state temperature gradients, and an optimal structure of the probe card is proposed by adjusting a set of relevant design parameters so that the deformations are minimized.

• Journal of the Korean Society of Safety
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• v.31 no.5
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• pp.22-27
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• 2016

The Electrostatic Charge Prevention Technology is a core factor that highly influences the yield of Ultra High Resolution Flat Panel Display and high-integrated semiconductor manufacturing processes. The corona or x-ray ionizations are commonly used in order to eliminate static charges during manufacturing processes. To develop such a revolutionary x-ray ionizer that is free of x-ray radiation and has function to control the volume of ion formation simultaneously is a goal of this research and it absolutely overcomes the current risks of x-ray ionization. Under the International Commission on Radiological Protection, it must have a leakage radiation level that should be lower than a recommended level that is $1{\mu}Sv/hour$. In this research, the new generation of x-ray ionizer can easily control both the volume of ion formation and the leakage radiation level at the same time. In the research, the test constraints were set and the descriptions are as below; First, In order not to leak x-ray radiation while testing, the shielding box was fully installed around the test equipment area. Second, Implement the metallic Ring Electrode along a tube window and applied zero to ${\pm}8kV$ with respect to manage the positive and negative ions formation. Lastly, the ion duty ratio was able to be controlled in different test set-ups along with a free x-ray leakage through the metallic Ring Electrode. In the result of experiment, the maximum x-ray radiation leakage was $0.2{\mu}Sv/h$. These outcome is lower than the ICRP 103 recommended value, which is $1{\mu}Sv/h$. When applying voltage to the metallic ring electrode, the positive decay time was 2.18s at the distance of 300 mm and its slope was 0.272. In addition, the negative decay time was 2.1s at the distance of 300 mm and its slope was 0.262. At the distance of 200 mm, the positive decay time was 2.29s and its slope was 0.286. The negative decay time was 2.35s and its slope was 0.293. At the distance of 100 mm, the positive decay time was 2.71s and its slope was 0.338. The negative decay time was 3.07s and its slope was 0.383. According to these research, the observation was shown that these new concept of ionizer is able to minimize the leakage radiation level and to control the positive and negative ion duty ratio while ionization.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.19 no.1
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• pp.603-608
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• 2018

Although the voltage-applied discharge method is most widely used in the semiconductor and display industries, periodic management costs are incurred because the method causes defects due to the absorption of ambient fine dust and causes emitter tip contamination due to the discharge. The emitter tip contamination problem is caused by the accumulation of fine particles in ambient air due to the corona discharge of the ionizer. Fuzzy ball generation accelerates the wear of the emitter tip and deteriorates the performance of the ionizer. Although a mechanical cleaning method using a manual brush or an automatic brush is effective for contaminant removal, it requires management of additional mechanical parts by the user. In some cases, contaminants accumulated in the emitter may be transferred to the wafer or product. In order to solve this problem, we developed an ionizer for a clean environment that can remove the pencil-type emitter tip and directly ionize the surrounding gas molecules using the tungsten wire located inside the ion tank. As a result of testing and certification by the Korea Institute of Machinery and Materials, the average concentration was $0.7572particles/ft^3$, the decay time was less than two seconds, and the ion valance was 7.6 V, which is satisfactory.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.21 no.8
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• pp.235-240
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• 2020

This study evaluated the improvements for circuits of a combat vehicle distribution box to reduce the noise generated in electromagnetic compatibility (EMC) testing. An analysis of the distribution boxes that failed the standard revealed the conducted noise generated from the converter and semiconductor switching elements on the circuit board. The distribution box transfers power from the generator and battery to the cooling system of a combat vehicle to keep turning the air conditioner on and off. Two methods were proposed to overcome this problem: a passive filter was added to the circuit board for the first method, and the converter and switching elements were replaced with the relays for the second method. Both methods were effective in reducing noise, but a greater improvement was obtained from the second method. The second method was applied to a combat vehicle system and was found to be suitable according to the EMC standards.

• Journal of the Korean Institute of Telematics and Electronics C
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• v.36C no.2
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• pp.14-25
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• 1999

The IEEE standard 1149.1, which was proposed to increase the observability and the controllability in I/O pins, makes it possible the board level testing. In the boundary-scan environments, many shift operations are required due to their serial nature. This increases the test application time and the test application costs. To reduce the test application time, the method based on the parallel opereational multiple scan paths was proposed, but this requires the additional I/O pins and the internal wires. Moreover, it is difficult to make the designs in conformity to the IEEE standard 1149.1 since the standard does not support the parallel operation of data shifts on the scan paths. In this paper, the multiple scan path access algorithm which controls two scan paths simultaneously with one test bus is proposed. Based on the new algorithm, the new algorithm, the new board level BIST architecture which has a relatively small area overhead is developed. The new BIST architecture can reduce the test application time since it can shift the test patterns and the test responses of two scan paths at a time. In addition, it can reduce the costs for the test pattern generation and the test response analysis.

• Journal of Powder Materials
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• v.28 no.2
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• pp.143-149
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• 2021

In this study, (GaN)_1-x(ZnO)_x solid solution nanoparticles with a high zinc content are prepared by ultrasonic spray pyrolysis and subsequent nitridation. The structure and morphology of the samples are investigated by X-ray diffraction (XRD), field-emission scanning electron microscopy, and energy-dispersive X-ray spectroscopy. The characterization results show a phase transition from the Zn and Ga-based oxides (ZnO or ZnGa₂O₄) to a (GaN)_1-x(ZnO)_x solid solution under an NH3 atmosphere. The effect of the precursor solution concentration and nitridation temperature on the final products are systematically investigated to obtain (GaN)_1-x(ZnO)_x nanoparticles with a high Zn concentration. It is confirmed that the powder synthesized from the solution in which the ratio of Zn and Ga was set to 0.8:0.2, as the initial precursor composition was composed of about 0.8-mole fraction of Zn, similar to the initially set one, through nitriding treatment at 700℃. Besides, the synthesized nanoparticles exhibited the typical XRD pattern of (GaN)_1-x(ZnO)_x, and a strong absorption of visible light with a bandgap energy of approximately 2.78 eV, confirming their potential use as a hydrogen production photocatalyst.

• Applied Chemistry for Engineering
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• v.34 no.6
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• pp.590-595
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• 2023

Novel aromatic imine derivatives with yellow were designed and synthesized for their potential application in color filters for image sensors. The synthesized compounds possessed chemical structures using aromatic imine groups. This innovative material was evaluated thoroughly, considering its optical and thermal properties under conditions similar to commercial device manufacturing processes. Following a rigorous performance evaluation, it was found that (E)-3-methyl-4-((3-methyl-5-oxo-1-phenyl-1H-pyrazol-4(5H)-ylidene)methyl)-1-phenyl-1H-pyrazol-5(4H)-one, abbreviated as MOPMPO, exhibited an impressive solubility of 0.5 wt% in propylene glycol monomethyl ether acetate, predominantly utilized as the solvent in the industry. Furthermore, MOPMPO showed exceptional performance as a color filter material for image sensors, having a high decomposition temperature of 290 ℃. These data unequivocally establish MOPMPO as a viable yellow dye additive for coloring materials in image sensor applications.

• Journal of Internet Computing and Services
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• v.25 no.1
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• pp.99-107
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• 2024

Along with economic growth and industrial development, there is an increasing demand for various electronic components and device production of semiconductor, SMT component, and electrical battery products. However, these products may contain foreign substances coming from manufacturing process such as iron, aluminum, plastic and so on, which could lead to serious problems or malfunctioning of the product, and fire on the electric vehicle. To solve these problems, it is necessary to determine whether there are foreign materials inside the product, and may tests have been done by means of non-destructive testing methodology such as ultrasound ot X-ray. Nevertheless, there are technical challenges and limitation in acquiring X-ray images and determining the presence of foreign materials. In particular Small-sized or low-density foreign materials may not be visible even when X-ray equipment is used, and noise can also make it difficult to detect foreign objects. Moreover, in order to meet the manufacturing speed requirement, the x-ray acquisition time should be reduced, which can result in the very low signal- to-noise ratio(SNR) lowering the foreign material detection accuracy. Therefore, in this paper, we propose a five-step approach to overcome the limitations of low resolution, which make it challenging to detect foreign substances. Firstly, global contrast of X-ray images are increased through histogram stretching methodology. Second, to strengthen the high frequency signal and local contrast, we applied local contrast enhancement technique. Third, to improve the edge clearness, Unsharp masking is applied to enhance edges, making objects more visible. Forth, the super-resolution method of the Residual Dense Block (RDB) is used for noise reduction and image enhancement. Last, the Yolov5 algorithm is employed to train and detect foreign objects after learning. Using the proposed method in this study, experimental results show an improvement of more than 10% in performance metrics such as precision compared to low-density images.