• JSTS:Journal of Semiconductor Technology and Science
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• v.10 no.3
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• pp.232-239
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• 2010

By using the clock timing control at transmitter (TX), the crosstalk-induced jitter (CIJ) is compensated for in the 2-bit parallel data transmission through the coupled microstrip lines on printed circuit board (PCB). Compared to the authors' prior work, the delay block circuit is simplified by combining a delay block with a minimal number of stages and a 3-to-1 multiplexer. The delay block generates three clock signals with different delays corresponding to the channel delay of three different signal modes. The 3-to-1 multiplexer selects one of the three clock signals for TX timing depending on the signal mode. The TX is implemented by using a $0.18\;{\mu}m$ CMOS process. The measurement shows that the TX reduces the RX jitters by about 38 ps at the data rates from 2.6 Gbps to 3.8 Gbps. Compared to the authors' prior work, the amount of RX Jitter reduction increases from 28 ps to 38 ps by using the improved implementation.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.29 no.6
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• pp.8-13
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• 2015

Recently, Illumination industry of LED module has been focused to industry technology for energy conservation of nation. The LED device is excellent to power efficiency due to semiconductor light source element. And the application to the lighting circuit technology can be designed to the sensitive lighting system for human sensitivity control. In this paper, as a process for analyzing the operating temperature of standardized electronic device including LED device has analyzed about fusing character with in designed micro fuse for electronic device protection from the over current. Using the de-rating technique, which is performed to micro fuse fusing test in the range of $-30^{\circ}C{\sim}120^{\circ}C$ thermostatic chamber. To the output data in each temperature zone, it is performed to first-order linear fitting. Additionally, applying the resistance temperature coefficient and statistical data for the reliable analysis has derived to the metal element resistance of micro fuse with temperature change of the thermostatic chamber. As a research result, The changed temperature effect of thermostatic chamber was confirmed regarding fusing time change.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.4
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• pp.375-380
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• 2005

CF₄ molecular gas is used in most of semiconductor manufacture processing and SF/sub 6/ molecular gas is widely used in industrial of insulation field. but both of gases have defect in global warming. C₃F/sub 8/ gas has large attachment cross-section more than these gases, moreover GWP, life-time and price of C₃F/sub 8/ gas is lower than them, therefor it is important to calculate transport coefficients of C₃F/sub 8/ gas like electron drift velocity, ionization coefficient, attachment coefficient, effective ionization coefficient and critical E/N. The aim of this study is to get these transport coefficients for imformation of the insulation strength and efficiency of etching process. In this paper, we calculated the electron drift velocity (W) in pure C₃F/sub 8/ molecular gas over the range of E/N=0.1∼250 Td at the temperature was 300 K and gas pressure was 1 Torr by the Boltzmann equation method. The results of this paper can be important data to present characteristic of gas for plasma etching and insulation, specially critical E/N is a data to evaluate insulation strength of a gas.

• JSTS:Journal of Semiconductor Technology and Science
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• v.17 no.1
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• pp.56-64
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• 2017

In this paper, an advanced ZigBee (AZB) system for internet-of-things (IoT) applications is proposed which can support various data rates from 31.25 Kbps to 2 Mbps, and the implementation results of the AZB baseband processor are presented. Repetition coding for 32-chip direct-sequence spread spectrum (DSSS) symbol is applied for low rates under 250 Kbps to extend the coverage. Convolution coding, puncturing, and interleaving for non-DSSS symbol are performed for high rates from 500 Kbps to 2 Mbps for multi-media services. Simulation results show that the coverage increases at the rate of 51.8-77.3% for various environments compared with IEEE 802.15.4 ZigBee. AZB baseband processor was implemented in 180 nm CMOS process and total gate counts are 260K with the size of $5.8mm^2$.

• JSTS:Journal of Semiconductor Technology and Science
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• v.15 no.2
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• pp.155-167
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• 2015

An adaptive equalization scheme based on all-digital jitter measurement is proposed for a continuous time linear equalizer (CTLE) preceding a clock and data recovery (CDR) in a receiver circuit for high-speed serial interface. The optimum equalization coefficient of CTLE is determined during the initial training period based on the measured jitter. The proposed circuit finds automatically the optimum equalization coefficient for CTLE with 20", 30", 40" FR4 channel at the data rate of 5 Gbps. The chip area of the equalizer including the adaptive controller is 0.14 mm2 in a $0.13{\mu}m$ process. The equalizer consumes 12 mW at 1.2 V supply during the normal operation. The adaptive equalizer has been applied to a USB3.0 receiver.

• JSTS:Journal of Semiconductor Technology and Science
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• v.16 no.6
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• pp.745-753
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• 2016

This paper presents a fully synthesizable low power interconnect bus for millimeter-scale wireless sensor nodes. A segmented ring bus topology minimizes the required chip real estate with low input/output pad count for ultra-small form factors. By avoiding the conventional open drain-based solution, the bus can be fully synthesizable. Low power is achieved by obviating a need for local oscillators in member nodes. Also, aggressive power gating allows low-power standby mode with only 53 gates powered on. An integrated wakeup scheme is compatible with a power management unit that has nW standby mode. A 3-module system including the bus is fabricated in a 180 nm process. The entire system consumes 8 nW in standby mode, and the bus achieves 17.5 pJ/bit/chip.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.04b
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• pp.38-41
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• 2004

The oxidizer plays an important role in the metal chemical mechanical polishing(CMP) slurry. Currently, the oxidizer used in CMP slurry is nearly divided into several kinds such as $Fe(NO_3)_3$, $H_2O_2$, $KIO_3$, and $H_5IO_6$. It is generally known that oxidizer character of $H_2O_2$ is more effective than other oxidizers. In this work, we have been studied the characteristics for the $H_2O_2$ concentration of copper slurry, which can applicable in the recent semiconductor manufacturing process. Also, it plays an important role in the planarization of copper films using copper slurries during micro-electronic device fabrication. In this work, we confirmed that removal rate of Cu/TaN changed by $H_2O_2$ concentration on copper slurry. And we used $KMnO_4$ in the measurement method of $H_2O_2$. In analysis results, we confirmed that the difference of results is large. We thought that the difference was due to organic component existence. So in titration method of $H_2O_2$ concentration, we used $Na_2S_2O_3$ instead of $KMnO_4$ as solution. Consequently, using the titration method, we could calculate correct data reduced error. And $H_2O_2$ concentration has been adjusted to the target concentration of 0.1 wt%.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.132-132
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• 2011

For the programming volume of PRAM, Ge2Sb2Te5(GST) thin films have been dominantly used and prepared by physical vapor deposition (PVD), chemical vapor deposition (CVD), atomic layer deposition (ALD). Among these methods, ALD is particularly considered as the most promising technique for the integration of PRAM because the ALD offers a superior conformality to PVD and CVD methods and a digital thickness control precisely to the atomic level since the film is deposited one atomic layer at a time. Meanwhile, although the IST has been already known as an optical data storage material, recently, it is known that the IST benefits multistate switching behavior, meaning that the IST-PRAM can be used for mutli-level coding, which is quite different and unique performance compared with the GST-PRAM. Therefore, it is necessary to investigate a possibility of the IST materials for the application of PRAM. So far there are many attempts to deposit the IST with MOCVD and PVD. However, it has not been reported that the IST can be deposited with the ALD method since the ALD reaction mechanism of metal organic precursors and the deposition parameters related with the ALD window are rarely known. Therefore, the main aim of this work is to demonstrate the ALD process for IST films with various precursors and the conformal filling of a nano size programming volume structure with the ALD?IST film for the integration. InSbTe (IST) thin films were deposited by ALD method with different precursors and deposition parameters and demonstrated conformal filling of the nano size programmable volume of cell structure for the integration of phase change random access memory (PRAM). The deposition rate and incubation time are 1.98 A/cycle and 25 cycle, respectively. The complete filling of nano size volume will be useful to fabricate the bottom contact type PRAM.

• Journal of the Korean Chemical Society
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• v.60 no.3
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• pp.169-176
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• 2016

In a borate buffer solution, the growth kinetics and the electronic properties of passive film on aluminum were investigated, using the potentiodynamic method, chronoamperometry, and multi-frequency electrochemical impedance spectroscopy. The corrosion of aluminum was heavily influenced by the degree of oxygen concentration because of the increasing reduction current. The oxide film formed during the passivation process of aluminum has showed the electronic properties of n-type semiconductor, which follow from the Mott-Schottky equation. It was found out that the passive film (Al(OH)₃) of Al formed in the low electrode potential changes to Al₂O₃ while the electrode potential increases. The growth kinetics data as measured by chronoamperometry suggests a mechanism in which the growth of the film of Al₂O₃ is determined by field-assisted transport of ions through the film.

• Korean Chemical Engineering Research
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• v.52 no.6
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• pp.750-754
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• 2014

Quantitative risk analysis has been performed for a pervaporation process for production of high test peroxide. Potential main accidents are explosion and fire caused by a decomposition reaction. As the target process has a laboratory scale, the consequence is considered to belong to Category 3. An event tree has been developed as a model for occurrence of a decomposition reaction in the target process. The probability functions of the accident causes have been established based on the frequency data of similar events. Using the constructed model, the failure rate has been calculated. The result indicates that additional safety devices are required in order to achieve an acceptable risk level, i.e. an accident frequency less than $10^{-4}/yr$. Therefore, a layer of protection analysis has been applied. As a result, it is suggested to introduce inherently safer design to avoid catalytic reaction, a safety instrumented function to prevent overheating, and a relief system that prevents explosion even if a decomposition reaction occurs. The proposed method is expected to contribute to developing safety management systems for various chemical processes including concentration of hydrogen peroxide.