• Title/Summary/Keyword: Semiconductor Nanoparticle

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A Study on the Tunable Memory Characteristics of Nanoparticle-Based Nonvolatile Memory devices according to the Metal Nanoparticle Species (금속나노입자의 종류에 따른 나노입자 기반 비휘발성 메모리 소자의 특성 변화에 관한 연구)

  • Kim, Yong-Mu;Park, Young-Su;Lee, Jang-Sik
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.11a
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    • pp.19-19
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    • 2008
  • We investigated the programmable memory characteristics of nanoparticle-based memory devices based on the elementary metal nanoparticles (Co and Au) and their binary mixture synthesized by a micellar route to ordered arrays of metal nanoparticles as charge trapping layers. According to the metal nanoparticle species quite different programming/erasing efficiencies were observed, resulting in the tunable memory characteristics at the same programming/erasing bias conditions. This finding will be a good implication for further device scaling and novel device applications since most processes are based on the conventional semiconductor processes.

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Single Nanoparticle Photoluminescence Studies of Visible Light-Sensitive TiO2 and ZnO Nanostructures

  • Yoon, Minjoong
    • Rapid Communication in Photoscience
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    • v.2 no.1
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    • pp.9-17
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    • 2013
  • Visible light-sensitive $TiO_2$ and ZnO nanostructure materials have attracted great attention as the promising material for solar energy conversion systems such as photocatalysts for water splitting and environmental purification as well as nano-biosensors. Success of their applications relies on how to control their surface state behaviors related to the exciton dynamics and optoelectronic properties. In this paper, we briefly review some recent works on single nanoparticle photoluminescence (PL) technique and its application to observation of their surface state behaviors which are raveled by the conventional ensemble-averaged spectroscopic techniques. This review provides an opportunity to understand the temporal and spatial heterogeneities within an individual nanostructure, allowing for the potential use of single-nanoparticle approaches in studies of their photoenergy conversion and nano-scale optical biosensing.

Thin Film Transistor fabricated with CIS semiconductor nanoparticle

  • Kim, Bong-Jin;Kim, Hyung-Jun;Jung, Sung-Mok;Yoon, Tae-Sik;Kim, Yong-Sang;Choi, Young-Min;Ryu, Beyong-Hwan;Lee, Hyun-Ho
    • 한국정보디스플레이학회:학술대회논문집
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    • 2009.10a
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    • pp.1494-1495
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    • 2009
  • Thin Film Transistor(TFT) having CIS (CuInSe) semiconductor layer was fabricated and characterized. Heavily doped Si was used as a common gate electrode and PECVD Silicon nitride ($SiN_x$) was used as a gate dielectric material for the TFT. Source and drain electrodes were deposited on the $SiN_x$ layer and CIS layer was formed by a direct patterning method between source and drain electrodes. Nanoparticle of CIS material was used as the ink of the direct patterning method.

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Investigation of the Effects of ZnO Thin Film Deposition Methods on Inverted Polymer Solar Cells (다양한 박막 형성법을 사용한 ZnO 전자 추출층이 역구조 고분자 태양전지에 미치는 영향 연구)

  • Lee, Donggu;Noh, Seunguk;Sung, Myungmo;Lee, Changhee
    • Current Photovoltaic Research
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    • v.1 no.1
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    • pp.59-62
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    • 2013
  • We investigated the effects of ZnO thin film deposition methods on the performance of inverted polymer solar cells with a structure of ITO/ZnO/P3HT:PCBM/MoO3/Al. The ZnO thin films were deposited by various methods (spin coating of nanoparticles, sol-gel process, atomic layer deposition) and their morphology was analyzed by atomic force microscopy (AFM). The device with ZnO nanoparticle thin films showed the highest power conversion efficiency of 3 % with low series resistance and high shunt resistance. The superior performance of the device with the ZnO nanoparticle layer is attributed to better electron extraction capability.

Gallium Nitride Nanoparticle Synthesis Using Non-thermal Plasma with N2 Gas

  • Yu, Gwang-Ho;Kim, Jeong-Hyeong;Yu, Sin-Jae;Ryu, Hyeon;Seong, Dae-Jin;Sin, Yong-Hyeon;Jang, Hong-Yeong
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.236.1-236.1
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    • 2014
  • Compounds of Ga, such as gallium oxide (Ga2O3) and gallium nitride (GaN), are of interest due to its unique properties in semiconductor application. In particular, GaN has the potentially application for optoelectronic device such as light-emitting diodes (LEDs) and laser diodes (LDs) [1]. Nanoparticle is an interesting material due to its unique properties compared to the bulk equivalents. In this report, we develop a synthesizing method for gallium nitride nanoparticle using non-thermal plasma. For gallium source, the gallium is heated by thermal conduction of tungsten boat which is heated by eddy current induced from RF current in antenna. Nitrogen source for nanoparticle synthesis are from inductively coupled plasma with N2 gas. The synthesized nano particles are analyzed using field-emission scanning microscope (FESEM), transmission electron microscope (TEM) and x-ray photoelectron spectroscopy (XPS). The synthesized particles are investigated and discussed in wide range of experiment conditions such as flow rate, pressure and RF power.

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Review : Functional Nanoparticles (기능성 나노입자)

  • Lee, Jun-Wung
    • Journal of the Korea Institute of Military Science and Technology
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    • v.11 no.5
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    • pp.71-83
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    • 2008
  • For the major scientific laboratories around the world, nanotechnology has been one of the key scientific issues since the end of the last millenium. The basic materials of this newly emerging technology are nanoparticles, which, in fact, have been used for many centuries. However, the physical properties of the particles were understood quite recently. In order to apply the new properties we have to protect and functionalize the surfaces of the particles, since without protection of the surfaces, nanoparticles grow themselves due to Ostwald Ripening. In this review, the author describes recent technical progress in the field of fuctionalization of various nanoparticles and their applications, so that readers can grasp the overall picture of this new technological field.

Nanoparticle generation and growth in low temperature plasma process (저온 플라즈마 공정에서의 나노 미립자 생성 및 성장)

  • Kim, Dong-Joo;Kim, Kyo-Seon
    • Particle and aerosol research
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    • v.5 no.3
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    • pp.95-109
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    • 2009
  • A low temperature plasma process has been widely used for semiconductor fabrication and can also be applied for the preparation of solar cell, MEMS or NEMS, but they are notorious in the point of particle contamination. The nano-sized particles can be generated in the low temperature plasma process and they can induce several serious defects on the performance and quality of microelectronic devices and also on the cost of final products. For the preparation of high quality thin films of high efficiency by the low temperature plasma process, it is desirable to increase the deposition rate of thin films with reducing the particle contamination in the plasmas. In this paper, we introduced the studies on the generation and growth of nanoparticles in the low temperature plasmas and tried to introduce the recent interesting studies on nanoparticle generation in the plasma reactors.

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Prototype Fabrication and Performance Evaluation of Metal-oxide Nanoparticle Sensor for Detecting of Hazardous and Noxious Substances Diluted in Sea Water (해수 중 유해위험물질 검출을 위한 금속산화물 나노 입자 센서의 시작품 제작 및 성능 평가)

  • Sangsu An;Changhan Lee;Jaeha Noh;Youngji Cho;Jiho Chang;Sangtae Lee;Yongmyung Kim;Moonjin Lee
    • Journal of the Korean Society of Marine Environment & Safety
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    • v.28 no.spc
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    • pp.23-29
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    • 2022
  • To detect harmful chemical substances in seawater, we fabricated a prototype sensor and evaluated its performance. The prototype sensor consisted of a detector, housing, and driving circuit. We built the detector by printing an Indium-Tin-Oxide (ITO) nanoparticle film on a flexible substrate, and it had two detection parts for simultaneous detection of temperature and HNS concentration. The housing connected the detector and the driving circuit and was made of Teflon material to prevent chemical reactions that may affect sensor performance. The driving circuit supplied electric power, and display measured data using a bridge circuit and an Arduino board. We evaluated the sensor performances such as response (ΔR), the limit of detection (LOD), response time, and errors to confirm the specification.