• Journal of the Korea Institute of Information and Communication Engineering
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• v.10 no.2
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• pp.224-227
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• 2006

We have chained 459nm blue laser radiation generated by intracavity sum frequency generation( SFG ) due to the mixing of the 1064 nm laser output of a Nd:YVO4 pumped by diode and the 809nm radiation from higg-power semiconductor laser(500mW). The maximum blue output power of 0.95 mW was obtained using 400 mW input power of semiconductor laser at the type II phase matching condition (${\psi}=90^{\circ}\;{\theta}=90^{\circ}$). The threshold input power of blue laser generation was 120 mW.

• Korean Journal of Optics and Photonics
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• v.8 no.1
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• pp.47-51
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• 1997

A Cr:LiSAF laser pumped by semiconductor lasers was constructed. The pumping laser was a high-power semiconductor laser (SDL 7432-H1) of wavelength 674 nm and maximum power of 500 mW. The laser crystal was a Cr:LiSAF of plano-Brewster shape with 3% Cr3+ion concentration and 3 mm in length. The plane facet of the crystal was coated to get the maximum transmittance of pupmping laser and maximu reflection over the 800 - 880 nm bandwidth. V-shaped resonator was used to compensate the astigmatism induced by the crystal. The output power of the Cr:LiSAF laser was 19.4 mW at the pumping power of 290 mW. The wavelength was tuned by a steep dive-angled birefringent filter from 840 nm to 880 nm and the characteristics of the filter were agreed well with a theory.

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.2
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• pp.169-174
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• 2014

As a versatile processing method for nanoscale memory integration, laser-induced epitaxial growth is proposed for the fabrication of vertical Si channel (VSC) transistor. The fabricated VSC transistor with 80 nm gate length and 130 nm pillar diameter exhibited field effect mobility of $300cm^2/Vs$, which guarantees "device quality". In addition, we have shown that this VSC transistor provides memory operations with a memory window of 700 mV, and moreover, the memory window further increases by employing charge trap dielectrics in our VSC transistor. Our proposed processing method and device structure would provide a promising route for the further scaling of state-of-the-art memory technology.

• Proceedings of the KIEE Conference
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• 1996.07c
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• pp.1980-1981
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• 1996

Laser direct dry etching is a new technique in semiconductor processing which has a lot of advantage, including decrease of etching-induced damage, maskless, photoresistiess, and high selectivity. This study presents characteristics of a laser direct dry etching for $Al_{0.3}Ga_{0.7}As/GaAs$ multi-layer structures for the first time. In this study, we were able to obtain the unusual aching profiles. The cross sectional analysis of etched groove was peformed for reaction characteristics and their applications.

• Proceedings of the Korean Society of Laser Processing Conference
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• 2000.11a
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• pp.0-0
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• 2000

• Journal of the Optical Society of Korea
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• v.17 no.2
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• pp.117-129
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• 2013

We briefly review the recent progress in passively mode-locked fiber lasers (PMLFLs) based on semiconductor saturable absorber mirrors (SESAMs) and discuss the detailed characterization of a SESAM-based, passively mode-locked erbium-doped fiber (EDF) laser operating in the 1.5-${\mu}m$ spectral range for various configurations. A simple and compact design of the laser cavity enables the PMLFL to generate either femtosecond or wavelength-tunable picosecond pulses with high stability as the intra-cavity filtering method is altered. All the cavities investigated in our experiments present self-starting, continuous-wave mode-locking with no Q-switching instabilities. The excellent stability of the source eventually enables the wavelength-tunable PMLFL to be used as a master oscillator for a power-amplifier source based on a large-core EDF, generating picosecond pulses of >10-kW peak power and >100-nJ pulse energy.

• Journal of IKEEE
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• v.18 no.1
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• pp.19-24
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• 2014

We report stable, wideband, flat-topped, 10 GHz optical frequency comb generation from a semiconductor-based mode-locked ring laser with an intra-cavity high finesse Fabry-Perot etalon. We demonstrate a stable 10 GHz comb with greater than 200 lines within a spectral power variation below 1 dB, which is the largest value obtained from a similar mode-locked laser in our knowledge. Greater than 20 dB of the spectral peak to deep ratio at 0.02 nm resolution, ~92 femtosecond timing jitter over 1 kHz to 1 MHz range, and non-averaged time traces of pulses confirm very stable optical frequency comb lines.

• Journal of the Semiconductor & Display Technology
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• v.21 no.2
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• pp.1-6
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• 2022

This computational investigation of micro-sized particle dispersion concerns the fume particle contamination over target surface in high-precision laser line machining process of semiconductor and display device materials. Employing the random sampling based on probabilistic fume particle generation distributions, the effects of sphericity for nonspherical fume particles are analyzed for the fume particle dispersion and contamination near the laser machining line. The drag coefficient correlation for nonspherical particles in a low Reynolds number regime is selected and utilized for particle trajectory simulations after drag model validation. When compared to the corresponding results by the assumption of spherical fume particles, the sphericity of nonspherical fume particles show much less dispersion and contamination characteristics and it also significantly affects the particle removal rate in a suction air flow patterns.

• Journal of the Semiconductor & Display Technology
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• v.18 no.3
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• pp.72-76
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• 2019

A Q-switched diode-pumped neodymium-doped yttrium vanadate (YVO₄, λ =1064nm) laser was used for the direct patterning of indium tin oxide (ITO) films on glass substrate. During the laser direct patterning, the laser beam was incident on the two different directions of glass substrate and the laser ablated patterns were compared and analyzed. At a low scanning speed of laser beam, the larger laser etched lines were obtained by laser beam incident in reverse side of glass substrate. On the contrary, at a higher scanning speed, the larger etched pattern sizes were found in case of the beam incidence from front side of glass substrate. Furthermore, it was impossible to find no ablated patterns in some laser beam conditions for the laser beam from reverse side at a much higher scanning speed and repetition rate of laser beam. The laser beam is expected to be transferred and scattered through the glass substrate and the laser beam energy is thought to be also dispersed and much more influenced by the overlapping of each laser beam spot.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.15 no.3
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• pp.654-659
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• 2011

We propose a novel method to reduce laser chirp and improve modulation performance in semiconductor laser by using dual-electrode structure. Dual-electrode structure is realized by segmenting a electrode on top of gain medium, as was the case of edge emitting laser diode, into electrically isolated two electrodes. By using the proposed structure, we have experimentally achieved a reduction of laser spectral width of 0.23 nm and an improvement of 2.5-dB receiver sensitivity at an 80-km fiber transmission for 10-Gbps NRZ (non-return-to zero) data stream.