• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.1
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• pp.8-22
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• 2014

In the past few decades, CMOS logic technologies and devices have been successfully developed with the steady miniaturization of the feature size. At the sub-30-nm CMOS technology nodes, one of the main hurdles for continuously and successfully scaling down CMOS devices is the parametric failure caused by random variations such as line edge roughness (LER), random dopant fluctuation (RDF), and work-function variation (WFV). The characteristics of each random variation source and its effect on advanced device structures such as multigate and ultra-thin-body devices (vs. conventional planar bulk MOSFET) are discussed in detail. Further, suggested are suppression methods for the LER-, RDF-, and WFV-induced threshold voltage (VTH) variations in advanced CMOS logic technologies including the double-patterning and double-etching (2P2E) technique and in advanced device structures including the fully depleted silicon-on-insulator (FD-SOI) MOSFET and FinFET/tri-gate MOSFET at the sub-30-nm nodes. The segmented-channel MOSFET (SegFET) and junctionless transistor (JLT) that can suppress the random variations and the SegFET-/JLT-based static random access memory (SRAM) cell that enhance the read and write margins at a time, though generally with a trade-off between the read and the write margins, are introduced.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.9
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• pp.559-564
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• 2016

This study examined the malfunction mode of the HCMOS IC under narrow-band high-power electromagnetic wave. Magnetron is used to a narrow-band electromagnetic source. MFR (malfunction failure rate) was measured to investigate the HCMOS IC. In addition, we measured the resistance between specific pins of ICs, which are exposed and not exposed to the electromagnetic wave, respectively. As a test result of measurement, malfunction mode is shown in three steps. Flicker mode causing a flicker in LED connected to output pin of IC is dominant in more than 7.96 kV/m electric field. Self-reset mode causing a voltage drop to the input and output of IC during electromagnetic wave radiation is dominant in more than 9.1 kV/m electric field. Power-reset mode making a IC remained malfunction after electromagnetic radiation is dominant in more than 20.89 kV/m. As a measurement result of pin-to-pin resistance of IC, the differences between IC exposed to electromagnetic wave and normal IC were minor. However, the five in two hundred IC show a relatively low resistance. This is considered to be the result of the breakdown of pn junction when latch-up in CMOS occurred. Based on the results, the susceptibility of HCMOS IC can be applied to a basic database to IC protection and impact analysis of narrow-band high-power electromagnetic waves.

• Journal of IKEEE
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• v.26 no.1
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• pp.50-55
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• 2022

SiC is a power semiconductor with a wide bandgap, high insulation failure strength, and thermal conductivity, but many deep-level defects. Defects that appear in SiC can be divided into two categories, defects that appear in physical properties and interface traps that appear at interfaces. In this paper, Z_1/2 trap concentration 0 ~ 9×10¹⁴ cm^-3 reported at room temperature (300 K) is applied to SiC substrates and epi layer to investigate turn-on characteristics. As the trap concentration increased, the current density, Shockley-read-Hall (SRH), and Auger recombination decreased, and Ron increased by about 550% from 0.004 to 0.022 mohm.

• Journal of the Microelectronics and Packaging Society
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• v.30 no.4
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• pp.50-60
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• 2023

Ball Grid Array (BGA) is a widely used package type due to its high pin density and good heat dissipation. In BGA, solder balls play an important role in electrically connecting the package to the PCB. Therefore, understanding the inelastic deformation of solder balls under various mechanical loads is essential for the robust design of semiconductor packages. In this study, the geometrical effect on the inelastic deformation and fracture of solder balls were analyzed by finite element analysis. The results showed that fracture occurred in both tilted and hourglass shapes under shear loading, and no fracture occurred in all cases under compressive loading. However, when bending was applied, only the tilted shape failed. When shear and bending loads were combined with compression, the stress triaxiality was maintained at a value less than zero and failure was suppressed. Furthermore, a comparison using the Lagrangian-Green strain tensor of the critical element showed that even under the same loading conditions, there was a significant difference in deformation depending on the shape of the solder ball.

• Journal of Sensor Science and Technology
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• v.32 no.5
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• pp.290-294
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• 2023

Among various types of harmful gases, hydrogen sulfide is a strong toxic gas that is mainly generated during spillage and wastewater treatment at industrial sites. Hydrogen sulfide can irritate the conjunctiva even at low concentrations of less than 10 ppm, cause coughing, paralysis of smell and respiratory failure at a concentration of 100 ppm, and coma and permanent brain loss at concentrations above 1000 ppm. Therefore, rapid detection of hydrogen sulfide among harmful gases is extremely important for our safety, health, and comfortable living environment. Most hydrogen sulfide gas sensors that have been reported are electrical resistive metal oxide-based semiconductor gas sensors that are easy to manufacture and mass-produce and have the advantage of high sensitivity; however, they have low gas selectivity. In contrast, the electrochemical sensor measures the concentration of hydrogen sulfide using an electrochemical reaction between hydrogen sulfide, an electrode, and an electrolyte. Electrochemical sensors have various advantages, including sensitivity, selectivity, fast response time, and the ability to measure room temperature. However, most electrochemical hydrogen sulfide gas sensors depend on imports. Although domestic technologies and products exist, more research is required on their long-term stability and reliability. Therefore, this study includes the processes from electrode material synthesis to sensor fabrication and characteristic evaluation, and introduces the sensor structure design and material selection to improve the sensitivity and selectivity of the sensor. A sensor case was fabricated using a 3D printer, and an Ag reference electrode, and a Pt counter electrode were deposited and applied to a Polytetrafluoroethylene (PTFE) filter using PVD. The working electrode was also deposited on a PTFE filter using vacuum filtration, and an electrochemical hydrogen sulfide gas sensor capable of measuring concentrations as low as 0.6 ppm was developed.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.19 no.4
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• pp.650-656
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• 2018

The TFT-LCD industry is a kind of large-scale industrial Giant Microelectronics device industry and has a similar semiconductor process technology. Wet etching forms a relatively large proportion of the entire TFT process, but the number of published research papers on this topic is limited. The main reason for this is that the components of the etchant, in which the reaction takes place, are confidential and rarely publicized. Aluminum (Al) and copper (Cu), which have been used in recent years for the manufacture of large area LCDs, are very difficult materials to process using wet etching. Cu, a low-resistance material, can only be used in the wet etching process, and is used as a substitute for Al due to its high speed etching, low failure rate, and low power consumption. Further, the abnormal reaction of hydrogen peroxide ($H_2O_2$), which is used as an etching solution, requires additional piping and electrical safety devices. This paper proposes a method of minimizing the damage to the plant in the case of adverse reactions, though it cannot limit the adverse reaction of hydrogen peroxide. In recent years, there have been many cases in which aluminum etching equipment has been changed to copper. This paper presents a countermeasure against abnormal reactions by implementing safety PLC with a high safety grade.

• Journal of Arbitration Studies
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• v.21 no.2
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• pp.85-112
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• 2011

These days utilization of copyright in daily life and economic activities is becoming more important than ever, and IT technology is developing day by day. Along with those fact, copyright infringement and dispute is naturally increasing. This thesis dealt with the 3 different issues of ADR on copyright. The First part, introduce ADR system that was performed by Korea Copyright Committee according to Copyright law. This paper evaluate the committee's efforts to provide resolution of copyright disputes via conciliation was effective. So it needs to be look over several countries' ADR, beside conventional judicial remedy. And Korea's copyright conciliation system which is successfully operating also introduced. Second, In many countries, including South Korea are take advantage of conciliation as the way to settle down the dispute over copyright. Furthermore, looked over if we can use arbitration as tool to settle dispute or not. Currently in Korea, patent dispute is handled by Industrial Property Dispute Conciliation Committee(The Invention Promotion Act Ch.5) and Layout-design Review and Mediation Committee(The Act on the Layout-designs of Semiconductor Integrated Circuits Art.29-34), but using performance of those two committee is still too low. In comparison, the copyright committee, a affiliation organization of the ministry of culture, sports and tourism has much more result in conciliation compare with patent dispute. Copyright disputes has arbitrability of it's subject-matter and many regulating organs are interested in it. (especially, binding of arbitral award and final resolution). Take advantage of both conciliation and arbitration could be good way to resolve copyright disputes. Third, the writer look at the proposal on the creation of Northeast Regional Center for Intellectual Property ADR. Because of the nature of copyright and rapid development of internet technology, international use of work become more frequent and accordingly infringement cases are increasing. The role of commercial arbitration regimes and institutions which has progressed significantly worldwide level, but which has only just begun in the intellectual property ADR area, leads also to a clash of often very different legal cultures and protection in a market economy. International cooperation in regional area with conflict interests becomes an important alternative. But it will depend on the building of regional institutions and mechanisms. The feasibility of this proposal and preconditions were examined. Establishment of new international organization requires a lot of time, cost and efforts. And risk of failure is much too high. Therefore factual, statistical review should be preceded. In addition, technical measures, such as on-line arbitration is necessary to review also. Furthermore in order to establish new organization, the relative law, legal environment, public sentiment and international compliance must be carefully considered with factual review about the needs and economic benefits of each country Yet on complex regulatory matters such as IP and ADR, a great deal of the potential benefits from international standards arises not from the international legal framework nor even the formal content of national legislation, but from the informed and effective use made of the possibilities within the system, including by policymakers and regulators.

• Journal of the Microelectronics and Packaging Society
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• v.19 no.2
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• pp.7-15
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• 2012

Semiconductor packages are increasingly moving toward miniaturization, lighter and multi-functions for mobile application, which requires highly integrated multi-stack package. To meet the industrial demand, the package and silicon chip become thinner, and ultra-thin packages will show serious reliability problems such as warpage, crack and other failures. These problems are mainly caused by the mismatch of various package materials and geometric dimensions. In this study we perform the numerical analysis of the warpage deformation and thermal stress of 4-layer stacked FBGA package after EMC molding and reflow process, respectively. After EMC molding and reflow process, the package exhibits the different warpage characteristics due to the temperature-dependent material properties. Key material properties which affect the warpage of package are investigated such as the elastic moduli and CTEs of EMC and PCB. It is found that CTE of EMC material is the dominant factor which controls the warpage. The results of RSM optimization of the material properties demonstrate that warpage can be reduced by $28{\mu}m$. As the silicon die becomes thinner, the maximum stress of each die is increased. In particular, the stress of the top die is substantially increased at the outer edge of the die. This stress concentration will lead to the failure of the package. Therefore, proper selection of package material and structural design are essential for the ultra-thin die packages.