• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2009년도 춘계학술대회 논문집
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• pp.889-890
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• 2009

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.1
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• pp.235-238
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• 2004

본 연구는 반도체소자 제조공정에 적용되는 CMP공정 중 LPP(Landing Plug Poly) Contact간의 소자 분리를 위해 진행되는 LPP CMP의 후 세정 과정에서 유발되는 방사형 Defect 제거에 관한 내용이다. 방사형 Defect은 LPP CMP 후에 노출되는 BPSG, Poly, Nitride Film과 연마재로 사용되는SiO2 입자, 후 세정과정에서 적용되는 SC-1, DHF, $NH_4OH$ Chemical과 Brush와의 상호작용에 의해 발생되며, Cleaning시의 산성 분위기 하에서 각 물질간의 pH와 Zeta Potential의 차이에서 기인한다. 이 Defect을 제거하기 위해 LPP CMP후에 Film 표면에 노출되는 각 물질의 표면 특성과 CMP 후 오염입자의 흡착과 재 흡착에 영향을 미치는 Electrostatic force와 Van der Waals force, PVA Brush에 의한 Mechanical force의 상호작용을 고려하여 최적 후 세정 조건을 제시 하였다.

• 한국반도체및디스플레이장비학회:학술대회논문집
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• 한국반도체및디스플레이장비학회 2007년도 춘계학술대회
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• pp.128-131
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• 2007

As the minimum feature size decrease, control of contamination by nanoparticles is getting more attention in semiconductor process. Cleaning technology which removes nanoparticles is essential to increase yield. A reference wafer on which particles with known size and number are deposited is needed to evaluate the cleaning process. We simulated particle trajectories in the chamber by using FLUENT. Charged monodisperse particles are generated using scanning mobility particle sizer (SMPS) and deposited on the wafer by electrostatic force. The experimental results agreed with the simulation results well. We calculate the particles loss in pipe flow theoretically and compare with the experimental results.

• 한국전기전자재료학회논문지
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• 제17권12호
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• pp.1259-1263
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• 2004

In this paper, the optimum design of ultrasonic dry cleaning head was investigated. The transducer instead of mechanical dynamic structure was used to generate ultrasonic wave and the horn-shape amplifier was utilized to solve the energy decaying problem of ultrasonic wave with propagating it through the media. The analyses of ultrasonic wave and a fluid for the selected structure of a cleaning head were carried out using SYSNOISE and ANSYS simulators, respectively. Based on simulator results, the distance between a horn and the substrate of 4 mm and the horn diameter of 10 mm were determined to maximize the energy of ultrasonic waves. The cooling structure was also considered to reduce the heat from the transducer and the horn. The equivalent circuit for the fabricated horn was deduced from HP4194A impedance/gain/phase analyzer and the frequency of an ultrasonic wave of 20.25 kHz was confirmed using the parameters of the equivalent circuit.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제52권12호
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• pp.579-585
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• 2003

Recently the utilization of the ozone dissolved de-ionized water(DI-O3 water) in semiconductor wet cleaning process to replace the conventional RCA methods has been studied. In this paper, we propose the water-electrode type ozone generator which has the ozone gas characteristics of the high concentration and high purity to produce the high concentration DI-O3 water for the silicon wafer surface cleaning process. The ozone generator has the dual dielectric tube structure of silent discharge type and the water is both used to electrode and cooling water. We investigate the performance of the proposed ozone generator which has the design goal of the concentration of 7[wt%] and ozone generation quantity of 6[g/hr] at flow rate of 1[$\ell$/min). The experiment results show that the water electrode type ozone generator has the characteristics of 8.48[wt%] of concentration, 8.08[g/hr] of generation quantity and 76.2[g/kWh] of yield and it's possible to use the proposed ozone generator for the DI-O3 water cleaning process of silicon wafer surface.

• E2M - 전기 전자와 첨단 소재
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• 제10권1호
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• pp.8-14
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• 1997

The UV/O$_{3}$ dry cleaning has been well known in removing organic molecules. The UV/O$_{3}$ dry cleaning method was performed to clean the Si wafer surfaces and contact holes contaminated by organic molecules such as residual PR. During the cleaning process, the Si surfaces were analyzed with X-ray photoelectron spectroscopy (XPS), atomic force microscope (AFM) and ellipsometer. When the UV/O$_{3}$ dry cleaning at 200'C was performed for 3 minutes, the residual photoresist was almost removed on Si wafer surfaces, but Si surfaces were oxidized. For UV/O$_{3}$ application of contact hole cleaning, the contact string were formed using the equipment of ISRC (Inter-university Semiconductor Research Center). Before Al deposition, UV/O$_{3}$ (at 200.deg. C) dry cleaning was performed for 3 minutes. After metal annealing, the specific contact resistivity was measured. Because UV/O$_{3}$ dry cleaning removed organic contaminants in contact holes, the specific contact resistivity decreased. Each contact hole size was different, but the specific contact resistivities were all much the same. Thus, it is expected that the UV/O$_{3}$ dry cleaning method will be useful method of removal of the organic contaminants at smaller contact hole cleaning.

• 반도체디스플레이기술학회지
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• 제9권1호
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• pp.5-10
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• 2010

Among a variety of cleaning processes, the cryogenic carbon dioxide ($CO_2$) cleaning has merits because it is highly efficient in removing very fine particles, innoxious to humans and does not produce residuals after the cleaning, which enables us to extend its area of coverage in the semi-conductor fabrication society. However, the cryogenic carbon dioxide cleaning method has some technical research issues in aspect to particles' adhesion and removal. To resolve these issues, performing an analysis for the identification of particle adhesion mechanism is needed. In this study, a research was performed by a theoretical approach. To this end, we extended the G-T (Greenwood-Tripp) model by applying the JKR (Johnson-Kendall-Roberts) and Lennard-Jones potential theories and the statistical characteristics of rough surface to investigate and identify the contact, adhesion and deformation mechanisms of soft or hard particles on the rough substrate. The statistical characteristics of the rough surface were taken into account through the employment of the normal probability distribution function of the asperity peaks on the substrate surface. The effects of surface roughness on the pull-off force for these particles were examined and discussed.

• 한국재료학회:학술대회논문집
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• 한국재료학회 1997년도 한국재료학회 추계학술발표회
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• pp.56-56
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• 1997

• 한국산학기술학회논문지
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• 제11권3호
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• pp.795-801
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• 2010

LCD (Liquid Crystal Display) 제조기술이 발전함에 따라 유리기판은 점차 대형화되는 추세이고 제조공정도 세밀화되어 감에 따라 LCD 제조과정에서 세정공정의 중요성이 부각되고 있다. 본 연구에서는 물리적 세정방법 중 브러쉬 (brush), 버블제트 (bubble jet) 및 이류체 (aqua/air) 세정법을 이용하여 미립자 (particles) 제거효율을 비교 평가하였다. 7세대 LCD 유리기판 ($1875\;mm\;{\times}\;2200\;mm$)을 대상으로 초순수 (deionized water)의 유량 및 압력 변화와 브러쉬의 모(毛)와 유리기판과의 접촉깊이 (contact depth) 등의 운전조건 변화를 통하여 미립자의 제거효율을 비교하였고 각 세정법에 의한 유의차 분석을 통해 향후 세정장비 개발에 유용한 자료로 활용하고자 하였다. 브러쉬 세정의 경우 브러쉬 접촉깊이에 변화를 주었을 때 임계점부터는 세정효율에 유의차가 크지 않음을 알 수 있었다. 버블제트 세정은 압력변화에 따른 세정력 유의차가 거의 없음을 관찰할 수 있었으며, 이류체 세정은 압력변화시 임계점까지는 세정력 유의차가 존재하나 임계점 이후부터는 유의차가 발생하지 않았다. 상기 3가지 세정방법 중 브러쉬 세정이 주어진 조건에서는 세정효과가 가장 큰 것으로 나타났다.

• Transactions on Electrical and Electronic Materials
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• 제14권5호
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• pp.254-257
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• 2013

In-situ optical emission spectroscopy (OES) is employed for PECVD chamber monitoring. OES is used as an addon sensor to monitoring and cleaning end point detection (EPD). On monitoring plasma chemistry using OES, the process gas and by-product gas are simultaneously monitored. Principal component analysis (PCA) enhances the capability of end point detection using OES data. Through chamber cleaning monitoring using OES, cleaning time is reduced by 53%, in general. Therefore, the gas usage of fluorine is also reduced, so satisfying Green Fab challenge in semiconductor manufacturing.