• 제목/요약/키워드: Semiconductor

검색결과 10,155건 처리시간 0.033초

p형 GaP 반도체 계면의 전류 특성 (Current Characteristics at p-GaP Semiconductor Interfaces)

  • 김은익;천장호
    • 대한전자공학회논문지
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    • 제26권9호
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    • pp.1369-1374
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    • 1989
  • Electrical characteristics at the p-GaP semiconductor/CsNO3 electrolyte interfaces were investigated. It is found that such interfacial phenomena are well analyzed by semiconductor-semiconductor pn junction diode models and image charge effects of semiconductor-vacuum interfaces. The formation processes of electrical double layers and their potential variations are verified using cyclic voltammetric methods. The interfacial current are influenced by Cs+ ion coverage onto the semiconductor electrode surface and structure of electrical double layer.

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반도체 레이저 디이오드의 2차원 수치해석 (A Two-dimensional Numerical Analysis of Semiconductor Laser Diodes))

  • 김형래;곽계달
    • 전자공학회논문지A
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    • 제32A권11호
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    • pp.17-28
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    • 1995
  • In this paper, we developed a two-dimensional numerical simulator which could analyze the stripe geometry semiconductor laser diodes by modifying the commercial semiconductor device simulator, MEDICI. In order to study the characteristics of semiconductor laser diodes, it is necessary to solve the Helmholtz wave equation and photon rate equation in addition to the basic semiconductor equations. Also the recombination rates due to the spontaneous and the stimulated emissions should be included, which are very important recombination mechanisms in semiconductor laser diodes. Therefore, we included the solution routines which analyzed the Helmholtz wave equation and the photon rate equation and two important recombination rates to simulate the semiconductor laser diodes. Then we simulated the gain-guiding and index-guiding DH(Double Heterostructure) semiconductor laser diodes to verify the validity of the implemented functions. The results obtained from simulation are well consistent with the previously published ones. This allows us to know the operating characteristics of DH laser diodes and is expected to use as a tool for optimum design.

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초음파를 이용한 반도체의 신뢰성 평가 (Reliability Evaluation of Semiconductor using Ultrasonic)

  • 장효성;하욥;장경영;김정규
    • 한국신뢰성학회:학술대회논문집
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    • 한국신뢰성학회 2001년도 정기학술대회
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    • pp.239-244
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    • 2001
  • Today, Ultrasonic is used as an important non-destructive test tool of semiconductor reliability evaluation and failure analysis. The semiconductor packaging trend goes to develop thin package, this trend makes difficult to inspect to defect in semiconductor package. One of the important problem in all semiconductor is moisture absorption in the atmosphere. This moisture causes crack or delamination to package when the semiconductor package is soldered on PCB. Reliability evaluation of semiconductor's object is investigating the effect of this moisture. For that reason, this study is investigating the effect of this moisture and reliability evaluation of semiconductor after preconditioning test and scanning acoustic microscope.

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